JPS57104267A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57104267A JPS57104267A JP18100480A JP18100480A JPS57104267A JP S57104267 A JPS57104267 A JP S57104267A JP 18100480 A JP18100480 A JP 18100480A JP 18100480 A JP18100480 A JP 18100480A JP S57104267 A JPS57104267 A JP S57104267A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- hollow
- gate electrode
- film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To improve the characteristics of MOSFET by surely realizing the structure in which a gate electrode is formed at a position near a source electrode from the center of a hollow. CONSTITUTION:A film 23 such as SiO2 is formed on a GaAs substrate 21 on which a GaAs active layer 22 is formed and the SiO2 film 23 is opened a window through a photoresist adhered on the layer 23 and metals 28, 29 for source and drain electrodes are evaporated to remove the resist or the like. Next, the whole surface is covered with a resist 31 and the window 30 is opened to constitute lsg<lgd for etching and then the film 23 is removed. Furthermore, etching is done to make a hollow 32 at a part of the layer 22 and the resist 31 is removed after evaporating a gate electrode metal 33. The Schottky gate electrode obtained by the above method is surely formed at the place approaching a source electrode 28 rather than the center of the hollow 32.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18100480A JPS57104267A (en) | 1980-12-19 | 1980-12-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18100480A JPS57104267A (en) | 1980-12-19 | 1980-12-19 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57104267A true JPS57104267A (en) | 1982-06-29 |
| JPS6227754B2 JPS6227754B2 (en) | 1987-06-16 |
Family
ID=16093046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18100480A Granted JPS57104267A (en) | 1980-12-19 | 1980-12-19 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57104267A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59224175A (en) * | 1983-06-03 | 1984-12-17 | Nec Corp | Field effect transistor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5381085A (en) * | 1976-12-27 | 1978-07-18 | Fujitsu Ltd | Production of semiconductor device |
-
1980
- 1980-12-19 JP JP18100480A patent/JPS57104267A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5381085A (en) * | 1976-12-27 | 1978-07-18 | Fujitsu Ltd | Production of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59224175A (en) * | 1983-06-03 | 1984-12-17 | Nec Corp | Field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6227754B2 (en) | 1987-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1510293A (en) | Manufacture of semiconductor devices | |
| JPS5499576A (en) | Thin-film transistor and its manufacture | |
| JPS57104267A (en) | Manufacture of semiconductor device | |
| JPS5730376A (en) | Manufacture of schottky barrier fet | |
| JPS577972A (en) | Insulated gate type thin film transistor | |
| JPS56155531A (en) | Manufacture of semiconductor device | |
| JPS5277682A (en) | Manufacture of semiconductor device | |
| JPS56100482A (en) | Manufacture of fet | |
| JPS56111264A (en) | Manufacture of semiconductor device | |
| JPS6424466A (en) | Manufacture of semiconductor device | |
| JPS5750478A (en) | Manufacture of semiconductor device | |
| JPS54162461A (en) | Manufacture for semiconductor device | |
| JPS5673474A (en) | Manufacture of semiconductor device | |
| JPS6459963A (en) | Manufacture of field-effect transistor | |
| JPS57155778A (en) | Manufacture of schottky barrier gate fet | |
| JPS57130477A (en) | Manufacture of field-effect transistor | |
| JPS57188884A (en) | Formation of recessed minute multilayer gate electrode | |
| JPS647571A (en) | Manufacture of semiconductor device | |
| JPS55117280A (en) | Semiconductor device | |
| JPS57103358A (en) | Manufacture of amorphous silicon mosfet | |
| JPS5673469A (en) | Manufacture of semiconductor device | |
| JPS57124443A (en) | Forming method for electrode layer | |
| JPS6425576A (en) | Manufacture of semiconductor device | |
| JPS56135967A (en) | Manufacture of semiconductor device | |
| JPS6425577A (en) | Manufacture of semiconductor device |