JPS57173959A - Connecting method of electrode or wiring layer to semiconductor or conductor layer in semiconductor device - Google Patents
Connecting method of electrode or wiring layer to semiconductor or conductor layer in semiconductor deviceInfo
- Publication number
- JPS57173959A JPS57173959A JP6006681A JP6006681A JPS57173959A JP S57173959 A JPS57173959 A JP S57173959A JP 6006681 A JP6006681 A JP 6006681A JP 6006681 A JP6006681 A JP 6006681A JP S57173959 A JPS57173959 A JP S57173959A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- windows
- electrode
- regions
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a larger contact surface by a method wherein the surface of a semiconductor layer within a window whereto an electrode is connected is provided with a ruggedly formed surface. CONSTITUTION:In a semiconductor substrate 1 with regions 3 and 4 formed inside and insulator layers 5 and 8 formed outside, the insulator layer 8 is provided with a mask 12 for boring windows and the insulators 5 and 8 are subjected to gas plasma etching in a mixture exemplifiedly of CF4 and H2. The etching is so effected that resultant windows 13 and 14 contain columns 15 and 16 surviving the process. The columns 15 and 16 act as masks in another process of etching the semiconductor regions 3 and 4 in the windows 13 and 14 to obtain rugged surfaces 18 and 19 in the regions 3 and 4. Electrodes 20 and 21 are respectively built in the windows 13 and 14 after removed of the mask layer 12 and the columns 15 and 16, which realizes very large contact surfaces between the regions 3, 4 and the electrode 20, 21.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6006681A JPS57173959A (en) | 1981-04-21 | 1981-04-21 | Connecting method of electrode or wiring layer to semiconductor or conductor layer in semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6006681A JPS57173959A (en) | 1981-04-21 | 1981-04-21 | Connecting method of electrode or wiring layer to semiconductor or conductor layer in semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57173959A true JPS57173959A (en) | 1982-10-26 |
Family
ID=13131334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6006681A Pending JPS57173959A (en) | 1981-04-21 | 1981-04-21 | Connecting method of electrode or wiring layer to semiconductor or conductor layer in semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57173959A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209143A (en) * | 1982-05-31 | 1983-12-06 | Seiko Epson Corp | Structure of multilayer wiring |
JPS58209144A (en) * | 1982-05-31 | 1983-12-06 | Seiko Epson Corp | Structure of multilayer wiring |
JPH04314352A (en) * | 1991-04-12 | 1992-11-05 | Oki Electric Ind Co Ltd | Fabrication of semiconductor device |
JP2006287084A (en) * | 2005-04-04 | 2006-10-19 | Rohm Co Ltd | Thin-film transistor element and manufacturing method thereof |
US9625536B2 (en) | 2013-10-17 | 2017-04-18 | Mitsubishi Electric Corporation | Magnetic sensor and method for manufacturing the same |
-
1981
- 1981-04-21 JP JP6006681A patent/JPS57173959A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209143A (en) * | 1982-05-31 | 1983-12-06 | Seiko Epson Corp | Structure of multilayer wiring |
JPS58209144A (en) * | 1982-05-31 | 1983-12-06 | Seiko Epson Corp | Structure of multilayer wiring |
JPH04314352A (en) * | 1991-04-12 | 1992-11-05 | Oki Electric Ind Co Ltd | Fabrication of semiconductor device |
JP2006287084A (en) * | 2005-04-04 | 2006-10-19 | Rohm Co Ltd | Thin-film transistor element and manufacturing method thereof |
US9625536B2 (en) | 2013-10-17 | 2017-04-18 | Mitsubishi Electric Corporation | Magnetic sensor and method for manufacturing the same |
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