TW328176B - Fabrication method of capacitor for DRAM - Google Patents

Abstract

A fabrication method of capacitor for DRAM applied to a substrate with MOS transistors includes a. forming a protecting layer on the substrate with a contact plug to expose the drain or the source area b. forming the first conducting layer on the protecting layer connected to the drain/soure area through the contact plug c. forming plural shielding islands on the first conducting layer d. forming an insulating layer on the part of the first conducting layer not covered by the shielding islands e. forming spacer on the side of the shielding islands f. etching the insulator to be plural slots g. removing the spacer and the shielding islands h. etching the first conducting layer to form plural columns i. removing the insulating layer j. define the first conducting layer to form the bottom-side electrode of the capacitor k. forming a dielectric layer on the bottom-side electrode l. forming the second conducting layer to form the top-side electrode of the capacitor.