TW279264B - Fabrication method of capacitor for DRAM cell - Google Patents

Abstract

A fabrication method of capacitor for DRAM cell, that is applicable to substrate with formed MOS transistor, comprises the steps of: forming insulator on the above substrate; forming the first masking layer on the above insulator; forming contact window contacting with either one of drain and source area of the above MOS transistor on the above first masking layer and insulator; in sequence forming the first conductive layer and the second masking layer on the above contact window and the first masking layer, and making the above first conductive layer and the second masking layer be formed with lateral side; forming the second conductive sidewall spacer on lateral side of the above first conductive layer and the second masking layer; removing the above first masking layer and the second masking material; forming dielectric layer on the above first conductive layer and the second conductive sidewall spacer surface; forming the second conductive layer on the above dielectric layer surface.