TW343373B - Process for producing a semiconductor component - Google Patents

Abstract

A process for producing a semiconductor component used as a capacitor, which comprises the following steps: forming a plug-shape conductive semiconductor layer on a conductive semiconductor substrate, in which the plug-shape conductive semiconductor layer is surrounded by an insulation layer; forming a semiconductor oxide layer on the insulation layer, the semiconductor oxide layer having an opening located on a position corresponding to the plug-shape conductive semiconductor layer; forming a conductive semiconductor layer and a conductive semiconductor layer with a rough surface on the plug-shape conductive semiconductor layer and the semiconductor oxide layer; forming an etch mask layer on the conductive semiconductor layer with a rough surface; etching back the etch mask layer until exposing the top surface of the conductive semiconductor layer with a rough surface, thereby forming the etch mask layer into an etch mask; contacting the conductive semiconductor layer with a rough surface with an etchant to react with a semiconductor oxide, thereby removing the top surface deposited on the conductive semiconductor layer, and the residual space between the grooves of the conductive semiconductor layer with a rough surface; using the etch mask to etch the conductive semiconductor layer with a rough surface, the conductive semiconductor layer and the semiconductor oxide layer, thereby forming an electrode having a vertical columnar shape, the vertical column having an open top and sealed bottom; forming a dielectric layer at least covering the electrode having a vertical columnar shape; and forming another electrode with a conductive material covering the dielectric layer.