TW351018B - Method of manufacturing of the figured capacitor in D-RAMs - Google Patents

Abstract

A sort of method of manufacturing of the figured capacitor in D-RAMs, including at least: forming the first dielectric layer on the semiconductor wafer; forming the first conductor layer onto the first dielectric layer; forming the second dielectric layer onto the first conductor layer; forming the third dielectric layer onto the second dielectric layer; etching the third dielectric layer and the bottom area of the second dielectric layer; etching in sequence the second dielectric layer, being the first conductor layer and the first dielectric layer to form the contact opening in contact part of the semiconductor wafer, being the etching process with a screen of the third dielectric layer, which is removed in the etching of the first dielectric layer; forming of the second conductor layer on the second dielectric layer and in the contact opening, the second conductor layer in contact part of the area of the semiconductor wafer; forming the structure of the substrate electrode, by iso-directional etching of the second conductor layer and the second dielectric layer and the first conductor layer, before equal-directional etching the first dielectric layer for forming; forming the fourth dielectric layer onto the substrate electrode; and forming the third conductor layer on the fourth dielectric layer for forming the top electrode of the capacitor.