JPS6489322A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6489322A
JPS6489322A JP24716487A JP24716487A JPS6489322A JP S6489322 A JPS6489322 A JP S6489322A JP 24716487 A JP24716487 A JP 24716487A JP 24716487 A JP24716487 A JP 24716487A JP S6489322 A JPS6489322 A JP S6489322A
Authority
JP
Japan
Prior art keywords
electrodes
electrode
wirings
resist film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24716487A
Other languages
Japanese (ja)
Inventor
Masao Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24716487A priority Critical patent/JPS6489322A/en
Publication of JPS6489322A publication Critical patent/JPS6489322A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To form metal electrodes or metal wirings at positions where electrodes or wirings are removed and to prevent an active region from damaging, contaminating by forming simulated electrodes or wirings made of photoresist at predetermined positions on a semiconductor substrate, forming an insulating film on a whole surface, and exposing by etching the electrodes or the wirings. CONSTITUTION:After a resist film 14 is formed on a semiconductor substrate 11, a plurality of types of simulated electrodes 12A, 12B are formed at predetermined positions. Then, an insulating film 13 is formed on a whole surface to flatten the resist film 14, the films 13, 14 are etched to expose the surfaces of the electrodes 12A, 12B. After the electrodes 12A, 12B are removed, a part except that from which the electrode 12A is removed is covered with a resist film 16A, and a Schottky electrode 15 is formed at the position from which the electrode 12A is removed. The film 16A is then removed, the electrode 15 is covered with a resist film 16B, and an ohmic electrode 17 is formed at the position of the electrode 12B.
JP24716487A 1987-09-29 1987-09-29 Manufacture of semiconductor device Pending JPS6489322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24716487A JPS6489322A (en) 1987-09-29 1987-09-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24716487A JPS6489322A (en) 1987-09-29 1987-09-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6489322A true JPS6489322A (en) 1989-04-03

Family

ID=17159391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24716487A Pending JPS6489322A (en) 1987-09-29 1987-09-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6489322A (en)

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