JPS55128842A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS55128842A
JPS55128842A JP3556879A JP3556879A JPS55128842A JP S55128842 A JPS55128842 A JP S55128842A JP 3556879 A JP3556879 A JP 3556879A JP 3556879 A JP3556879 A JP 3556879A JP S55128842 A JPS55128842 A JP S55128842A
Authority
JP
Japan
Prior art keywords
wire
opening
film
coated
field plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3556879A
Other languages
Japanese (ja)
Inventor
Junichiro Horiuchi
Hideyuki Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3556879A priority Critical patent/JPS55128842A/en
Publication of JPS55128842A publication Critical patent/JPS55128842A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To provide a field plate used for a high withstand voltage element archictecture such as an IC or the like and having no cutout by forming the field plate by two fabricating steps of evaporating thin film on electrodes, etching it, evaporating thick film on the electrodes and lifting wires from the electrodes.
CONSTITUTION: An oxide film 1 is coated on a semiconductor substrate formed with a p-type diffused region 2 and a p+-type contact region 3 formed in the region 2, and an opening is perforated at the film 1 on the region 3. When a thin aluminum electrode wire 4 is coated on the entire surface including the opening, the wire 4 is not continued at the opening but formed with a diffused step 6, and formed with a diffused mask step 7 on the film 1. Therefore, a photoresist is coated thereon, etched, aluminum is again evaporated on the wire 4 including the photoresist, the cutout portion 8 of the wire 4 produced at the edge of the opening is retained as it is, and a second aluminum wire 5 is newly coated thereon to bury the cutout portion 8. Thus, even if the field plate is thick, the wire may not be disconnected, and the field plate may be accurately formed in length.
COPYRIGHT: (C)1980,JPO&Japio
JP3556879A 1979-03-28 1979-03-28 Manufacture of semiconductor element Pending JPS55128842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3556879A JPS55128842A (en) 1979-03-28 1979-03-28 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3556879A JPS55128842A (en) 1979-03-28 1979-03-28 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS55128842A true JPS55128842A (en) 1980-10-06

Family

ID=12445352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3556879A Pending JPS55128842A (en) 1979-03-28 1979-03-28 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS55128842A (en)

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