JPS55128842A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS55128842A JPS55128842A JP3556879A JP3556879A JPS55128842A JP S55128842 A JPS55128842 A JP S55128842A JP 3556879 A JP3556879 A JP 3556879A JP 3556879 A JP3556879 A JP 3556879A JP S55128842 A JPS55128842 A JP S55128842A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- opening
- film
- coated
- field plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To provide a field plate used for a high withstand voltage element archictecture such as an IC or the like and having no cutout by forming the field plate by two fabricating steps of evaporating thin film on electrodes, etching it, evaporating thick film on the electrodes and lifting wires from the electrodes.
CONSTITUTION: An oxide film 1 is coated on a semiconductor substrate formed with a p-type diffused region 2 and a p+-type contact region 3 formed in the region 2, and an opening is perforated at the film 1 on the region 3. When a thin aluminum electrode wire 4 is coated on the entire surface including the opening, the wire 4 is not continued at the opening but formed with a diffused step 6, and formed with a diffused mask step 7 on the film 1. Therefore, a photoresist is coated thereon, etched, aluminum is again evaporated on the wire 4 including the photoresist, the cutout portion 8 of the wire 4 produced at the edge of the opening is retained as it is, and a second aluminum wire 5 is newly coated thereon to bury the cutout portion 8. Thus, even if the field plate is thick, the wire may not be disconnected, and the field plate may be accurately formed in length.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3556879A JPS55128842A (en) | 1979-03-28 | 1979-03-28 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3556879A JPS55128842A (en) | 1979-03-28 | 1979-03-28 | Manufacture of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55128842A true JPS55128842A (en) | 1980-10-06 |
Family
ID=12445352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3556879A Pending JPS55128842A (en) | 1979-03-28 | 1979-03-28 | Manufacture of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55128842A (en) |
-
1979
- 1979-03-28 JP JP3556879A patent/JPS55128842A/en active Pending
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