JPS5541715A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5541715A
JPS5541715A JP11405478A JP11405478A JPS5541715A JP S5541715 A JPS5541715 A JP S5541715A JP 11405478 A JP11405478 A JP 11405478A JP 11405478 A JP11405478 A JP 11405478A JP S5541715 A JPS5541715 A JP S5541715A
Authority
JP
Japan
Prior art keywords
etching
layer
gas phase
base
dielectric film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11405478A
Other languages
Japanese (ja)
Inventor
Sadao Suganuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP11405478A priority Critical patent/JPS5541715A/en
Publication of JPS5541715A publication Critical patent/JPS5541715A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide the integration by forming accurately element separating region or unactive layer having a excellent electric characteristic and buried type dielectric layer with gas phase grow method and etching method not with selective oxidation method.
CONSTITUTION: Using the etching mask 22, recessed part is formed on the surface of base 21 by etching, and then the ion injected layer 24 or diffusion layer is formed by ion injection or heat diffusion. After the mask 22 is eliminated, the dielectric film 25 is formed with gas phase grow method or spatter vacuum evaporation method. After the flatting material 26 of fluidtive polymer is painted on and then hardened, the material 26 and the dielectrics are etched by plasma etching etc. With the etching treatment, the base 21 and the dielectric film 25 are flatted.
COPYRIGHT: (C)1980,JPO&Japio
JP11405478A 1978-09-19 1978-09-19 Production of semiconductor device Pending JPS5541715A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11405478A JPS5541715A (en) 1978-09-19 1978-09-19 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11405478A JPS5541715A (en) 1978-09-19 1978-09-19 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5541715A true JPS5541715A (en) 1980-03-24

Family

ID=14627873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11405478A Pending JPS5541715A (en) 1978-09-19 1978-09-19 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5541715A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180144A (en) * 1981-04-28 1982-11-06 Toshiba Corp Manufacture of semiconductor device
JPS5955034A (en) * 1982-09-22 1984-03-29 Fujitsu Ltd Formation of interelement isolating film
JPS61244032A (en) * 1985-04-22 1986-10-30 Sony Corp Manufacture of semiconductor device
JPS61290736A (en) * 1985-06-19 1986-12-20 Toshiba Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (en) * 1974-01-30 1975-08-25
JPS5226182A (en) * 1975-08-25 1977-02-26 Hitachi Ltd Manufacturing method of semi-conductor unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (en) * 1974-01-30 1975-08-25
JPS5226182A (en) * 1975-08-25 1977-02-26 Hitachi Ltd Manufacturing method of semi-conductor unit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180144A (en) * 1981-04-28 1982-11-06 Toshiba Corp Manufacture of semiconductor device
JPS6217867B2 (en) * 1981-04-28 1987-04-20 Tokyo Shibaura Electric Co
JPS5955034A (en) * 1982-09-22 1984-03-29 Fujitsu Ltd Formation of interelement isolating film
JPS61244032A (en) * 1985-04-22 1986-10-30 Sony Corp Manufacture of semiconductor device
JPS61290736A (en) * 1985-06-19 1986-12-20 Toshiba Corp Manufacture of semiconductor device

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