JPS5541715A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5541715A JPS5541715A JP11405478A JP11405478A JPS5541715A JP S5541715 A JPS5541715 A JP S5541715A JP 11405478 A JP11405478 A JP 11405478A JP 11405478 A JP11405478 A JP 11405478A JP S5541715 A JPS5541715 A JP S5541715A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- layer
- gas phase
- base
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To provide the integration by forming accurately element separating region or unactive layer having a excellent electric characteristic and buried type dielectric layer with gas phase grow method and etching method not with selective oxidation method.
CONSTITUTION: Using the etching mask 22, recessed part is formed on the surface of base 21 by etching, and then the ion injected layer 24 or diffusion layer is formed by ion injection or heat diffusion. After the mask 22 is eliminated, the dielectric film 25 is formed with gas phase grow method or spatter vacuum evaporation method. After the flatting material 26 of fluidtive polymer is painted on and then hardened, the material 26 and the dielectrics are etched by plasma etching etc. With the etching treatment, the base 21 and the dielectric film 25 are flatted.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11405478A JPS5541715A (en) | 1978-09-19 | 1978-09-19 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11405478A JPS5541715A (en) | 1978-09-19 | 1978-09-19 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5541715A true JPS5541715A (en) | 1980-03-24 |
Family
ID=14627873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11405478A Pending JPS5541715A (en) | 1978-09-19 | 1978-09-19 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5541715A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57180144A (en) * | 1981-04-28 | 1982-11-06 | Toshiba Corp | Manufacture of semiconductor device |
JPS5955034A (en) * | 1982-09-22 | 1984-03-29 | Fujitsu Ltd | Formation of interelement isolating film |
JPS61244032A (en) * | 1985-04-22 | 1986-10-30 | Sony Corp | Manufacture of semiconductor device |
JPS61290736A (en) * | 1985-06-19 | 1986-12-20 | Toshiba Corp | Manufacture of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50107877A (en) * | 1974-01-30 | 1975-08-25 | ||
JPS5226182A (en) * | 1975-08-25 | 1977-02-26 | Hitachi Ltd | Manufacturing method of semi-conductor unit |
-
1978
- 1978-09-19 JP JP11405478A patent/JPS5541715A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50107877A (en) * | 1974-01-30 | 1975-08-25 | ||
JPS5226182A (en) * | 1975-08-25 | 1977-02-26 | Hitachi Ltd | Manufacturing method of semi-conductor unit |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57180144A (en) * | 1981-04-28 | 1982-11-06 | Toshiba Corp | Manufacture of semiconductor device |
JPS6217867B2 (en) * | 1981-04-28 | 1987-04-20 | Tokyo Shibaura Electric Co | |
JPS5955034A (en) * | 1982-09-22 | 1984-03-29 | Fujitsu Ltd | Formation of interelement isolating film |
JPS61244032A (en) * | 1985-04-22 | 1986-10-30 | Sony Corp | Manufacture of semiconductor device |
JPS61290736A (en) * | 1985-06-19 | 1986-12-20 | Toshiba Corp | Manufacture of semiconductor device |
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