JPS6466940A - Manufacture of integrated circuit device - Google Patents
Manufacture of integrated circuit deviceInfo
- Publication number
- JPS6466940A JPS6466940A JP22464987A JP22464987A JPS6466940A JP S6466940 A JPS6466940 A JP S6466940A JP 22464987 A JP22464987 A JP 22464987A JP 22464987 A JP22464987 A JP 22464987A JP S6466940 A JPS6466940 A JP S6466940A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- photoresist
- silicon oxide
- frequency
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To remove a reaction product adhering to the sidewall of an opening section in an insulating film completely, and to prevent the modification of a wiring metallic film, a defective ohmic contact and stepped disconnection at the stepped section of the opening by removing a photoresist and continuously conducting reactive ion etching and high-frequency sputter-etching. CONSTITUTION:The upper section of an silicon substrate 11 such as silicon oxide 12 is spin-coated with a photoresist, and isotropic etching is conducted, using the photoresist 13 as a mask, and anisotropic etching is performed. The photo-resist is gotten rid of, a fluorine group reaction gas is introduced, and high-frequency discharged, and the whole surface of the silicon oxide 12 on a wafer 34 is ion-etched. An inert gas such as argon gas is introduced, and high-frequency discharged, and the whole surface of the silicon oxide 12 is further sputter-etched. A reaction product 14 is taken off completely through etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22464987A JPS6466940A (en) | 1987-09-07 | 1987-09-07 | Manufacture of integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22464987A JPS6466940A (en) | 1987-09-07 | 1987-09-07 | Manufacture of integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6466940A true JPS6466940A (en) | 1989-03-13 |
Family
ID=16817032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22464987A Pending JPS6466940A (en) | 1987-09-07 | 1987-09-07 | Manufacture of integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6466940A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02203528A (en) * | 1989-02-01 | 1990-08-13 | Hitachi Ltd | Specimen postpocessing and device therefor |
| DE4212494A1 (en) * | 1991-04-17 | 1992-10-22 | Mitsubishi Electric Corp | Producing isolated semiconductor sidewall for MOS transistor - using selective isotropic and anisotropic plasma etching of polycrystalline silicon@ and silicon@ isolating layers |
| JPH07326606A (en) * | 1995-01-30 | 1995-12-12 | Hitachi Ltd | Sample treatment |
| KR100265829B1 (en) * | 1996-12-18 | 2000-09-15 | 김영환 | Method for forming wine glass type contact hole in semiconductor device |
-
1987
- 1987-09-07 JP JP22464987A patent/JPS6466940A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02203528A (en) * | 1989-02-01 | 1990-08-13 | Hitachi Ltd | Specimen postpocessing and device therefor |
| DE4212494A1 (en) * | 1991-04-17 | 1992-10-22 | Mitsubishi Electric Corp | Producing isolated semiconductor sidewall for MOS transistor - using selective isotropic and anisotropic plasma etching of polycrystalline silicon@ and silicon@ isolating layers |
| US5432367A (en) * | 1991-04-17 | 1995-07-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having sidewall insulating film |
| US5541127A (en) * | 1991-04-17 | 1996-07-30 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method of sidewall insulating film |
| JPH07326606A (en) * | 1995-01-30 | 1995-12-12 | Hitachi Ltd | Sample treatment |
| KR100265829B1 (en) * | 1996-12-18 | 2000-09-15 | 김영환 | Method for forming wine glass type contact hole in semiconductor device |
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