JPS5554438A - Pinhole detecting method for chemical vapor-deposition film - Google Patents

Pinhole detecting method for chemical vapor-deposition film

Info

Publication number
JPS5554438A
JPS5554438A JP12819778A JP12819778A JPS5554438A JP S5554438 A JPS5554438 A JP S5554438A JP 12819778 A JP12819778 A JP 12819778A JP 12819778 A JP12819778 A JP 12819778A JP S5554438 A JPS5554438 A JP S5554438A
Authority
JP
Japan
Prior art keywords
film
chemical vapor
silicon dioxide
pinholes
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12819778A
Other languages
Japanese (ja)
Inventor
Tadao Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP12819778A priority Critical patent/JPS5554438A/en
Publication of JPS5554438A publication Critical patent/JPS5554438A/en
Pending legal-status Critical Current

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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating And Analyzing Materials By Characteristic Methods (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To detect accurately the state of a pinhole of a chemical vapor-deposition film by processing a semiconductor substrate, which has a metal layer and the chemical vapor-deposition film stacked on its surface in sequence, in a chemical etching solution for the metal layer. CONSTITUTION:On semiconductor substrate 1, Al film 2 of approximately 1mu in thickness is formed and on it, silicon dioxide film 3 is also formed by chemical vapor deposition (CVD) [In this case, pinholes 4 may be made in silicon dioxide film 3]. Next, when the above semiconductor substrate is dipped in hot liquid phosphoric acid (approximately 150-155 deg.C), silicon dioxide reacts little upon phosphoric acid, but phosphoric acid having passed through pingoles 4 reacts on Al film 2, so that expanded etching holes will be made in Al film 2 right under pinholes 4. Next, a buffer etching solution (a mixture of fluoric acid and ammonium fluoride) is used to remove silicon dioxide film 3 by dissolving and then etching holes 5 are observed through a microscope to detect and measure pinholes.
JP12819778A 1978-10-17 1978-10-17 Pinhole detecting method for chemical vapor-deposition film Pending JPS5554438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12819778A JPS5554438A (en) 1978-10-17 1978-10-17 Pinhole detecting method for chemical vapor-deposition film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12819778A JPS5554438A (en) 1978-10-17 1978-10-17 Pinhole detecting method for chemical vapor-deposition film

Publications (1)

Publication Number Publication Date
JPS5554438A true JPS5554438A (en) 1980-04-21

Family

ID=14978852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12819778A Pending JPS5554438A (en) 1978-10-17 1978-10-17 Pinhole detecting method for chemical vapor-deposition film

Country Status (1)

Country Link
JP (1) JPS5554438A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276064A (en) * 1988-04-27 1989-11-06 Eagle Ind Co Ltd Detecting device for pin hole of plating
JP2007080924A (en) * 2005-09-12 2007-03-29 Showa Denko Kk Manufacturing method of semiconductor light emitting element
JP2009294044A (en) * 2008-06-04 2009-12-17 Fuji Electric Device Technology Co Ltd Method for manufacturing semiconductor device
CN104851820A (en) * 2014-02-19 2015-08-19 北大方正集团有限公司 Semiconductor device defect detection method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853859A (en) * 1981-09-26 1983-03-30 Matsushita Electric Ind Co Ltd Integrated thin film element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853859A (en) * 1981-09-26 1983-03-30 Matsushita Electric Ind Co Ltd Integrated thin film element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276064A (en) * 1988-04-27 1989-11-06 Eagle Ind Co Ltd Detecting device for pin hole of plating
JP2007080924A (en) * 2005-09-12 2007-03-29 Showa Denko Kk Manufacturing method of semiconductor light emitting element
JP2009294044A (en) * 2008-06-04 2009-12-17 Fuji Electric Device Technology Co Ltd Method for manufacturing semiconductor device
CN104851820A (en) * 2014-02-19 2015-08-19 北大方正集团有限公司 Semiconductor device defect detection method

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