JPS5789241A - Fabrication of semiconductor - Google Patents

Fabrication of semiconductor

Info

Publication number
JPS5789241A
JPS5789241A JP16550580A JP16550580A JPS5789241A JP S5789241 A JPS5789241 A JP S5789241A JP 16550580 A JP16550580 A JP 16550580A JP 16550580 A JP16550580 A JP 16550580A JP S5789241 A JPS5789241 A JP S5789241A
Authority
JP
Japan
Prior art keywords
field
layer
aluminum
polysilicon
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16550580A
Other languages
Japanese (ja)
Inventor
Seiji Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP16550580A priority Critical patent/JPS5789241A/en
Publication of JPS5789241A publication Critical patent/JPS5789241A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Abstract

PURPOSE:To prevent breakage of aluminum interconnections by a construction of polysilicon buried in a field layer flush with the field surface. CONSTITUTION:After a field layer 4 is formed on a substrate 5, a groove is produced at a patterned area for polysilicon on the field by photolithographic etching process. A polysilicon layer 1 as thick as the groove depth is built in the groove on the field completely flush with the surface by CVD process. After making P<+> and N<+> diffusion, an interlayer insulation layer 3 is deposited, a layer of aluminum is provided by evaporation or other methods over the surface for interconnection afrer a contact hole is formed by etching. In such a construction, possible breakage of aluminum interconnections can be prevented because flatness of the aluminum coating is maintained on the field.
JP16550580A 1980-11-25 1980-11-25 Fabrication of semiconductor Pending JPS5789241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16550580A JPS5789241A (en) 1980-11-25 1980-11-25 Fabrication of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16550580A JPS5789241A (en) 1980-11-25 1980-11-25 Fabrication of semiconductor

Publications (1)

Publication Number Publication Date
JPS5789241A true JPS5789241A (en) 1982-06-03

Family

ID=15813660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16550580A Pending JPS5789241A (en) 1980-11-25 1980-11-25 Fabrication of semiconductor

Country Status (1)

Country Link
JP (1) JPS5789241A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4329518A1 (en) * 1993-08-28 1994-01-05 Slamecka Ernst Vacuum switch contact assembly - has piston unit with electrode and contact disc arrangement set into end surface and having low conductivity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4329518A1 (en) * 1993-08-28 1994-01-05 Slamecka Ernst Vacuum switch contact assembly - has piston unit with electrode and contact disc arrangement set into end surface and having low conductivity

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