JPS5494281A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5494281A JPS5494281A JP88778A JP88778A JPS5494281A JP S5494281 A JPS5494281 A JP S5494281A JP 88778 A JP88778 A JP 88778A JP 88778 A JP88778 A JP 88778A JP S5494281 A JPS5494281 A JP S5494281A
- Authority
- JP
- Japan
- Prior art keywords
- sio
- openings
- ions
- substrate
- tapered faces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To form good tapered faces and prevent step cutting of wirings by removing sharp opening end serrated parts through ion implantation.
CONSTITUTION: When the SiO2 12 on a Si substrate 1 is opened 12a, overhangs are produced, following to which SiO2 12' is created on the hole bottom. Next, ions are implanted by using a resist mask 13 having openings larger than the openings 12a, allowing the ions to arrive at the boundary face with the substrate. Next, when a SiO2 layer 22 is etched, the ion implanted portions are selectively removed owing to differences in the rate of etching, whereby the openings with mildly tapered faces are formed. Providing wiring 14 thereon obviates the occurrence of disconnection.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP88778A JPS5494281A (en) | 1978-01-10 | 1978-01-10 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP88778A JPS5494281A (en) | 1978-01-10 | 1978-01-10 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5494281A true JPS5494281A (en) | 1979-07-25 |
Family
ID=11486176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP88778A Pending JPS5494281A (en) | 1978-01-10 | 1978-01-10 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5494281A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54142077A (en) * | 1978-04-27 | 1979-11-05 | Fujitsu Ltd | Manufacture of semiconductor device |
KR100247481B1 (en) * | 1996-11-26 | 2000-03-15 | 김영환 | A method for forming metal contact in semiconductor device |
-
1978
- 1978-01-10 JP JP88778A patent/JPS5494281A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54142077A (en) * | 1978-04-27 | 1979-11-05 | Fujitsu Ltd | Manufacture of semiconductor device |
KR100247481B1 (en) * | 1996-11-26 | 2000-03-15 | 김영환 | A method for forming metal contact in semiconductor device |
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