JPS56152737A - Chemical vapor deposition device using decreased pressure - Google Patents
Chemical vapor deposition device using decreased pressureInfo
- Publication number
- JPS56152737A JPS56152737A JP5664080A JP5664080A JPS56152737A JP S56152737 A JPS56152737 A JP S56152737A JP 5664080 A JP5664080 A JP 5664080A JP 5664080 A JP5664080 A JP 5664080A JP S56152737 A JPS56152737 A JP S56152737A
- Authority
- JP
- Japan
- Prior art keywords
- board
- chemical vapor
- ports
- vapor deposition
- outside
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Abstract
PURPOSE:To exhaust and remove minute particles, etc. produced during putting in and out of a board by providing a suction port intercommunicating with the exhaust system of the outside to the bottom surface of the board of a chemical vapor deposition device using decreased pressure. CONSTITUTION:Suction ports 3a are formed to the bottom surface of the board 3 of a decompression type chemical vapor phase device and further these ports 3a are connected to the exhaust system of the outside by a piping 9. If negative pressure is applied to the suction ports 3a through the piping 9 at the time of putting the board 3 into or out from the inside of a reaction tube 1, the minute particles and the like of the product 8 of reaction breed on the inside wall of the tube 1 are exhausted and removed to the outside through the ports 3a. Hence, the inside of the tube is maintained clean and the formed film of good quality are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5664080A JPS604904B2 (en) | 1980-04-25 | 1980-04-25 | Reduced pressure chemical vapor deposition equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5664080A JPS604904B2 (en) | 1980-04-25 | 1980-04-25 | Reduced pressure chemical vapor deposition equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56152737A true JPS56152737A (en) | 1981-11-26 |
JPS604904B2 JPS604904B2 (en) | 1985-02-07 |
Family
ID=13032928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5664080A Expired JPS604904B2 (en) | 1980-04-25 | 1980-04-25 | Reduced pressure chemical vapor deposition equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS604904B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013035744A (en) * | 2011-07-08 | 2013-02-21 | Semiconductor Energy Lab Co Ltd | Fabrication method of silicon film, and fabrication method of power storage device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6297214A (en) * | 1985-10-22 | 1987-05-06 | 吉田 光一 | Micro switch |
-
1980
- 1980-04-25 JP JP5664080A patent/JPS604904B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013035744A (en) * | 2011-07-08 | 2013-02-21 | Semiconductor Energy Lab Co Ltd | Fabrication method of silicon film, and fabrication method of power storage device |
US10072331B2 (en) | 2011-07-08 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming silicon film and method for manufacturing power storage device |
Also Published As
Publication number | Publication date |
---|---|
JPS604904B2 (en) | 1985-02-07 |
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