JPS56152737A - Chemical vapor deposition device using decreased pressure - Google Patents

Chemical vapor deposition device using decreased pressure

Info

Publication number
JPS56152737A
JPS56152737A JP5664080A JP5664080A JPS56152737A JP S56152737 A JPS56152737 A JP S56152737A JP 5664080 A JP5664080 A JP 5664080A JP 5664080 A JP5664080 A JP 5664080A JP S56152737 A JPS56152737 A JP S56152737A
Authority
JP
Japan
Prior art keywords
board
chemical vapor
ports
vapor deposition
outside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5664080A
Other languages
Japanese (ja)
Other versions
JPS604904B2 (en
Inventor
Kazuo Ito
Kazuo Mizuguchi
Masahiro Yoneda
Hirokazu Miyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5664080A priority Critical patent/JPS604904B2/en
Publication of JPS56152737A publication Critical patent/JPS56152737A/en
Publication of JPS604904B2 publication Critical patent/JPS604904B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Abstract

PURPOSE:To exhaust and remove minute particles, etc. produced during putting in and out of a board by providing a suction port intercommunicating with the exhaust system of the outside to the bottom surface of the board of a chemical vapor deposition device using decreased pressure. CONSTITUTION:Suction ports 3a are formed to the bottom surface of the board 3 of a decompression type chemical vapor phase device and further these ports 3a are connected to the exhaust system of the outside by a piping 9. If negative pressure is applied to the suction ports 3a through the piping 9 at the time of putting the board 3 into or out from the inside of a reaction tube 1, the minute particles and the like of the product 8 of reaction breed on the inside wall of the tube 1 are exhausted and removed to the outside through the ports 3a. Hence, the inside of the tube is maintained clean and the formed film of good quality are formed.
JP5664080A 1980-04-25 1980-04-25 Reduced pressure chemical vapor deposition equipment Expired JPS604904B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5664080A JPS604904B2 (en) 1980-04-25 1980-04-25 Reduced pressure chemical vapor deposition equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5664080A JPS604904B2 (en) 1980-04-25 1980-04-25 Reduced pressure chemical vapor deposition equipment

Publications (2)

Publication Number Publication Date
JPS56152737A true JPS56152737A (en) 1981-11-26
JPS604904B2 JPS604904B2 (en) 1985-02-07

Family

ID=13032928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5664080A Expired JPS604904B2 (en) 1980-04-25 1980-04-25 Reduced pressure chemical vapor deposition equipment

Country Status (1)

Country Link
JP (1) JPS604904B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013035744A (en) * 2011-07-08 2013-02-21 Semiconductor Energy Lab Co Ltd Fabrication method of silicon film, and fabrication method of power storage device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6297214A (en) * 1985-10-22 1987-05-06 吉田 光一 Micro switch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013035744A (en) * 2011-07-08 2013-02-21 Semiconductor Energy Lab Co Ltd Fabrication method of silicon film, and fabrication method of power storage device
US10072331B2 (en) 2011-07-08 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Method for forming silicon film and method for manufacturing power storage device

Also Published As

Publication number Publication date
JPS604904B2 (en) 1985-02-07

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