JPS5644763A - Cvd device under reduced pressure - Google Patents

Cvd device under reduced pressure

Info

Publication number
JPS5644763A
JPS5644763A JP12006479A JP12006479A JPS5644763A JP S5644763 A JPS5644763 A JP S5644763A JP 12006479 A JP12006479 A JP 12006479A JP 12006479 A JP12006479 A JP 12006479A JP S5644763 A JPS5644763 A JP S5644763A
Authority
JP
Japan
Prior art keywords
tube
wafers
etching
si3n4 film
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12006479A
Other languages
Japanese (ja)
Inventor
Yukio Tanuma
Kazuo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12006479A priority Critical patent/JPS5644763A/en
Publication of JPS5644763A publication Critical patent/JPS5644763A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To facilitate the cleaning operation for the inside of reaction tube, by etching a substance piled on the internal surface of the reaction tube with etching gas activated by microwaves or high frequency waves. CONSTITUTION:Wafers 13 and a boat 12 are arranged in a silica tube 1. The silica tube 1 is evacuated through an evacuating pipe 10 by the rotation of a rotary pump 11 to a vacuum. The temp. in the silica tube 1 is raised to a prescribed temp., e.g., about 800 deg.C, and Si3N4 film is formed by opening a silane gas valve 5 and an ammonia gas valve 3. Si3N4 film is deposited on the wafers 13 and on the tube wall as well. After wafers are taken out, the tube is evacuated once again. Carbon tetrafluoride and oxygen are introduced into the tube by opening valves 6 and 4 so as to form plasma of CF4 by a microwave generator 7. Hereby the Si3N4 film piled on the wall of the tube is removed by etching at about 1mum/min rate. High frequency waves of 1-21MHz may also be used.
JP12006479A 1979-09-20 1979-09-20 Cvd device under reduced pressure Pending JPS5644763A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12006479A JPS5644763A (en) 1979-09-20 1979-09-20 Cvd device under reduced pressure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12006479A JPS5644763A (en) 1979-09-20 1979-09-20 Cvd device under reduced pressure

Publications (1)

Publication Number Publication Date
JPS5644763A true JPS5644763A (en) 1981-04-24

Family

ID=14776986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12006479A Pending JPS5644763A (en) 1979-09-20 1979-09-20 Cvd device under reduced pressure

Country Status (1)

Country Link
JP (1) JPS5644763A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6067673A (en) * 1983-09-22 1985-04-18 Semiconductor Energy Lab Co Ltd Plasma gaseous phase reaction method
JPS60212223A (en) * 1984-04-06 1985-10-24 Ushio Inc Photochemical reaction apparatus
JPS6281032A (en) * 1985-10-03 1987-04-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5274582A (en) * 1975-12-18 1977-06-22 Mitsubishi Electric Corp Washing in gas phase
JPS5329065A (en) * 1976-08-31 1978-03-17 Toshiba Corp Vapour phase reaction unit of semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5274582A (en) * 1975-12-18 1977-06-22 Mitsubishi Electric Corp Washing in gas phase
JPS5329065A (en) * 1976-08-31 1978-03-17 Toshiba Corp Vapour phase reaction unit of semiconductor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6067673A (en) * 1983-09-22 1985-04-18 Semiconductor Energy Lab Co Ltd Plasma gaseous phase reaction method
JPH0344148B2 (en) * 1983-09-22 1991-07-05 Handotai Energy Kenkyusho
JPS60212223A (en) * 1984-04-06 1985-10-24 Ushio Inc Photochemical reaction apparatus
JPH0353391B2 (en) * 1984-04-06 1991-08-14 Ushio Electric Inc
JPS6281032A (en) * 1985-10-03 1987-04-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

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