JPH0291937A - Ashing device and ashing using same - Google Patents
Ashing device and ashing using sameInfo
- Publication number
- JPH0291937A JPH0291937A JP24520788A JP24520788A JPH0291937A JP H0291937 A JPH0291937 A JP H0291937A JP 24520788 A JP24520788 A JP 24520788A JP 24520788 A JP24520788 A JP 24520788A JP H0291937 A JPH0291937 A JP H0291937A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma
- ashing
- substrate
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004380 ashing Methods 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 3
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 abstract description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract 2
- 235000002918 Fraxinus excelsior Nutrition 0.000 abstract 1
- 239000002956 ash Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 47
- 239000004065 semiconductor Substances 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 101100340271 Caenorhabditis elegans ida-1 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔（既 要〕
半導体装置の製造に用いられるレジスト膜を灰化する装
置及びそれを利用した灰化方法に関し、２００℃以下の
低温域における灰化速度の低下を抑えることによって低
温域での灰化処理を迅速に行うことを可能とし、以てレ
ジスト膜の沃化による重金属汚染を防止するとともに生
産性の向上をはかることを目的とし、
プラズマ発生部とプラズマ輸送部と加熱支持体とを有し
、前記加熱支持体に支持、加熱された被処理基板の沃化
処理を行う灰化装置であって、前記プラズマ輸送部にガ
ス導入口を設けて成ることを特徴とする灰化装置を用い
、前記プラズマ発生部でＨ２ガスプラズマを発生させ、
前記プラズマ輸送部に設けたガス導入口から０原子を含
むガスを導入して被処理基板の灰化処理を行うように構
成する。[Detailed Description of the Invention] [(Already required)] Regarding an apparatus for ashing a resist film used in the manufacture of semiconductor devices and an ashing method using the same, a reduction in the ashing rate in a low temperature range of 200°C or less is suppressed. This makes it possible to quickly perform ashing treatment at low temperatures, thereby preventing heavy metal contamination due to iodine in the resist film and improving productivity. and a heating support, the ashing apparatus performs an iodizing treatment on a substrate to be processed supported and heated by the heating support, characterized in that the plasma transport section is provided with a gas inlet. Generate H2 gas plasma in the plasma generation section using an ashing device,
The plasma transport unit is configured to incinerate a substrate by introducing a gas containing zero atoms from a gas inlet provided in the plasma transport section.
本発明は半導体装置の製造に用いられるレジスト膜等の
灰化装置及びそれを使用した沃化方法に関する。The present invention relates to an ashing device for resist films, etc. used in the manufacture of semiconductor devices, and an iodizing method using the same.
第２図は酸素ガスプラズマを用いた従来の灰化装置とそ
れを用いた灰化方法を説明するための図である。同図に
おいて、１）はプラズマ発生部、１２はプラズマ輸送部
、１３は加熱支持体、２０はガス排気口、１９は被処理
基板であって、不要となったレジスト膜等が被着してい
る。また、プラズマ発生部１）は、導波管１４、石英窓
１６、ガス導入口１５、プラズマ生成室１７、シャワー
板１８より構成されている。FIG. 2 is a diagram for explaining a conventional ashing device using oxygen gas plasma and an ashing method using the same. In the figure, 1) is a plasma generation part, 12 is a plasma transport part, 13 is a heating support, 20 is a gas exhaust port, and 19 is a substrate to be processed, on which unnecessary resist films, etc. are deposited. There is. Further, the plasma generation section 1) is composed of a waveguide 14, a quartz window 16, a gas inlet 15, a plasma generation chamber 17, and a shower plate 18.
同図において、ガス導入口１５から導入された０２ガス
は導波管１４より導かれたマイクロ（μ）波の交番電界
によってプラズマ生成室１７においてプラズマ化される
。発生した０２ガスプラズマはシャワー板１８を通過し
てプラズマ輸送部１２内をダウンフローし、被処理基板
１９上へ到達する。そして、０２ガスプラズマに含まれ
ている原子状酸素（０）が被処理基板１９に被着してい
るレジスト膜と反応して該レジスト膜を灰化せしめる。In the figure, 02 gas introduced from a gas inlet 15 is turned into plasma in a plasma generation chamber 17 by an alternating electric field of microwave (μ) waves guided from a waveguide 14. The generated 02 gas plasma passes through the shower plate 18, flows down inside the plasma transport section 12, and reaches the substrate 19 to be processed. Then, the atomic oxygen (0) contained in the 02 gas plasma reacts with the resist film adhering to the substrate 19 to be processed, thereby ashing the resist film.
反応後の０２ガスプラズマはガス排気口２０から排気さ
れる。また、上記沃化処理中、被処理基板１９は加熱支
持体１３により所定の温度に加熱される。The 02 gas plasma after the reaction is exhausted from the gas exhaust port 20. Further, during the iodizing treatment, the substrate 19 to be processed is heated to a predetermined temperature by the heating support 13.
第３図の直＆？Ｉ３０は上記灰化方法による灰化速度の
温度依存性を示したものであり、μ波出力を１．５ Ｋ
Ｗ、灰化装置内の圧力を０．８ Ｔｏｒｒ、 ０２流
士をＩ ＳＬＭ とし、被処理基板１９上のレジスト
を０ＦＰＲ−８００（東京応化製）としたときの特性を
示している。同図から明らかなように、沃化速度は被処
理基板１９の温度に強く依存しており、灰化速度を大き
くするためには被処理基板１９の温度を高くする必要が
ある。たとえば、温度１８０℃のどき約４５０ＯＡ／ｗ
ｉｎであった灰化速度は温度２２０℃で約１５００ＯＡ
／＋１ｌｉｎにまで増加する。Figure 3 Direct &? I30 shows the temperature dependence of the ashing rate by the above ashing method, and the μ-wave output is set to 1.5 K.
The characteristics are shown when the pressure in the ashing device is 0.8 Torr, the 02 flow rate is ISLM, and the resist on the substrate 19 to be processed is 0FPR-800 (manufactured by Tokyo Ohka). As is clear from the figure, the iodization rate strongly depends on the temperature of the substrate 19 to be processed, and in order to increase the ashing rate, it is necessary to increase the temperature of the substrate 19 to be processed. For example, approximately 450OA/w at a temperature of 180℃
The ashing rate was approximately 1500OA at a temperature of 220℃.
/+1lin.
以上説明した０２ダウンフローアツシング（灰化）の他
にオゾンアッシングも知られているが、温度１８０℃以
下では０２ダウンフローアツシングと同様に灰化速度が
低下する。また、０２ガスに少量のハロゲンガスを混合
したガスを用いたダウンフローアッシングでは１８０℃
以下の低温域においても灰化速度の顕著な低下はないが
、被処理基板をオーバーエツチングするためＬＳＩ等の
超微細加工には適していない。In addition to the 02 downflow ashing (ashing) described above, ozone ashing is also known, but at temperatures below 180°C, the ashing rate decreases like the 02 downflow ashing. In addition, in downflow ashing using a mixture of 02 gas and a small amount of halogen gas, the temperature is 180℃.
Although there is no significant decrease in the ashing rate even in the following low temperature range, the substrate to be processed is over-etched, so it is not suitable for ultra-fine processing of LSI and the like.
半導体製造工程においては、生産性等の観点から灰化処
理時間をできるだけ短縮することが望ましい。そのため
通常は灰化速度を大きくすることのできる２００〜２５
０℃に半導体ウェーハ等の被処理基板を加熱して灰化処
理を行う場合が多い。しかし半導体ウェーへの温度を２
００℃以上にすると沃化処理されたレジスト膜に含まれ
ている重金属たとえば鉄、ニッケル、アルミニウム、銅
等が半導体ウェーハを汚染して結晶欠陥を誘発したり、
あるいはデバイスのリーク電流を増加させる等の弊害を
ひきおこし、製造歩留りを低下させる等の問題が生ずる
。本発明は２００℃以下の低温域における灰化速度の低
下を抑えることによって低温域での灰化処理を迅速に行
うことを可能とし、以てレジスト膜の沃化による重金属
汚染を防止するとともに生産性の向上をはかることを目
的とする。In the semiconductor manufacturing process, it is desirable to shorten the ashing treatment time as much as possible from the viewpoint of productivity and the like. Therefore, it is usually 200 to 25, which can increase the ashing rate.
Ashing treatment is often performed by heating a substrate to be processed, such as a semiconductor wafer, to 0°C. However, the temperature to the semiconductor wafer is
If the temperature exceeds 00°C, heavy metals such as iron, nickel, aluminum, copper, etc. contained in the iodized resist film may contaminate the semiconductor wafer and induce crystal defects.
Alternatively, problems such as increased leakage current of the device may occur, resulting in lower manufacturing yield. The present invention makes it possible to perform the ashing process quickly in the low temperature range by suppressing the decrease in the ashing rate in the low temperature range of 200°C or less, thereby preventing heavy metal contamination due to iodization of the resist film and improving productivity. The purpose is to improve sexuality.
上記課題は、プラズマ発生部とプラズマ輸送部と加熱支
持体とを有し、前記加熱支持体に支持、加熱された被処
理基板の灰化処理を行う灰化装置であって、前記プラズ
マ輸送部にガス導入口を設けて成り、前記プラズマ発生
部で発生したプラズマが前記プラズマ輸送部を通過する
際、前記ガス導入口から導入されたガスと混合されて前
記被処理基板に到達するようにしたことを特徴とする灰
化装置を用い、前記プラズマ発生部でＨ２ガスプラズマ
を発生させ、前記プラズマ輸送部に設けたガス導入口か
ら０原子を含むガスを導入して被処理基板の灰化処理を
行うことを特徴とする灰化方法によって解決される。The above-mentioned problem is an ashing apparatus that includes a plasma generation section, a plasma transport section, and a heating support, and performs an ashing process on a substrate to be processed that is supported and heated by the heating support, wherein the plasma transport section A gas inlet is provided in the plasma generator, and when the plasma generated in the plasma generation section passes through the plasma transport section, it is mixed with the gas introduced from the gas inlet and reaches the substrate to be processed. Using an ashing apparatus characterized by the above, H2 gas plasma is generated in the plasma generation section, and a gas containing zero atoms is introduced from a gas inlet provided in the plasma transport section to ash the substrate to be processed. This problem is solved by an ashing method characterized by performing the following steps.
本発明によれば、プラズマ発生部において発生したＨ２
ガスプラズマはプラズマ輸送部を通って被処理基板上へ
到達する途中で、プラズマ輸送部に設けられたガス導入
口から導入された０原子を含むガスと混合、反応して０
１冒基を生ずる。そのため被処理基板上のレジスト膜等
と０■基が還元反応を起ごし、従来の原子状酸素との酸
化反応に比べて低温域における灰化速度の低下を抑える
ことが可能となる。According to the present invention, H2 generated in the plasma generation section
On the way to the substrate to be processed through the plasma transport section, the gas plasma mixes and reacts with the gas containing zero atoms introduced from the gas inlet provided in the plasma transport section, resulting in zero atoms.
1 produces a radical. Therefore, a reduction reaction occurs between the resist film and the like on the substrate to be processed and the 0■ group, making it possible to suppress a decrease in the ashing rate in a low temperature range compared to the conventional oxidation reaction with atomic oxygen.
第１図は本発明の詳細な説明するための灰化装置を示し
ている。同図において、１はプラズマ発生部、２はプラ
ズマ輸送部、３は加熱支持体、１０はガス排気口、９は
被処理基板であって、不要となったレジスト膜等が被着
している。また、プラズマ発生部ｌは、導波管４、ガス
導入口５、石英窓６、プラズマ生成室７、シャワー板８
より構成されており、プラズマ輸送部２の側壁には、ガ
ス導入口２１が設けられている。FIG. 1 shows an ashing device for explaining the invention in detail. In the figure, 1 is a plasma generation part, 2 is a plasma transport part, 3 is a heating support, 10 is a gas exhaust port, and 9 is a substrate to be processed, on which an unnecessary resist film, etc. is adhered. . Further, the plasma generation section l includes a waveguide 4, a gas inlet 5, a quartz window 6, a plasma generation chamber 7, and a shower plate 8.
A gas inlet 21 is provided on the side wall of the plasma transport section 2.
同図において、プラズマ発生部ｌのガス導入口５から導
入されたＨ２ガスは導波管４より導かれたμ波の交番電
界によってプラズマ生成室７においてプラズマ化される
。発生した１）２ガスプラズマはシャワー板８を通過し
てプラズマ輸送部２内をダウンフローする際、該プラズ
マ輸送部２の側壁に設けられたガス導入口２１から導入
されたＮＯ２ガスと混合、反応して０１）基を生ずる。In the figure, H2 gas introduced from the gas inlet 5 of the plasma generation section 1 is turned into plasma in the plasma generation chamber 7 by the alternating electric field of the μ waves guided from the waveguide 4. When the generated 1)2 gas plasma passes through the shower plate 8 and flows down inside the plasma transport section 2, it mixes with the NO2 gas introduced from the gas inlet 21 provided on the side wall of the plasma transport section 2; Reacts to produce the 01) group.
そして、該０１）基を含んだＨ２ガスプラズマが被処理
基板９上へ到達し、レジスト膜と反応してこれを灰化せ
しめる。反応後のプラズマはガス排気口１０から排気さ
れる。また、上記灰化処理中、被処理基板９は加熱支持
体３により所定の温度に加熱される。Then, the H2 gas plasma containing the 01) group reaches the substrate 9 to be processed, reacts with the resist film, and incinerates it. The plasma after the reaction is exhausted from the gas exhaust port 10. Further, during the ashing process, the substrate 9 to be processed is heated to a predetermined temperature by the heating support 3.
第３図に示した直線４０は以上の灰化法によって得られ
た灰化速度の温度依存性を示したものであり、Ａｒガス
で３０％に希釈したＨ２ガス６００ ＳＣＣＭをガス導
入口５から導入し、導波管４から周波数２．４５±０．
１ ＧＨｚ 、電力１．５に−のμ波を導入し、さらに
ガス導入口２１からＮＯ２ガス６００ ＳＣＣＭを導入
したときの特性を示している。酸素ダウンフローを用い
た従来の灰化装置及びそれを使用した灰化法によって得
られた直線３０で表される特性と比較すれば２００℃以
下の低温域における灰化速度が改善されていることが明
らかである。The straight line 40 shown in FIG. 3 shows the temperature dependence of the ashing rate obtained by the above ashing method. from the waveguide 4 at a frequency of 2.45±0.
The characteristics are shown when − μ-waves are introduced at 1 GHz and power is 1.5, and 600 SCCM of NO2 gas is further introduced from the gas inlet 21. Compared to the characteristics expressed by straight line 30 obtained by a conventional ashing device using oxygen downflow and an ashing method using the same, the ashing rate in the low temperature range of 200°C or less is improved. is clear.
例えば、被処理基板９の温度が２００℃のとき、本発明
に係る灰化Ｖｔ置を用いた場合の灰化速度は約１）００
０ Ａ／ｗｉｎであり、従来の酸素ダウンフローアッシ
ングの灰化速度約１５００ＯＡ／ｓｉｎに比べて劣って
いるが、温度１６０℃のときには本発明の灰化速度は約
４３０ＯＡ／ｗｉｎであり、従来例の約２５０ＯＡ／ｍ
ｉｎに比べて約１．７倍となっている。For example, when the temperature of the substrate 9 to be processed is 200° C., the ashing rate when using the ashing Vt device according to the present invention is approximately 1)00
0 A/win, which is inferior to the ashing rate of about 1500 OA/sin of conventional oxygen downflow ashing, but when the temperature is 160°C, the ashing rate of the present invention is about 430 OA/win, which is lower than the conventional example. Approximately 250OA/m
This is approximately 1.7 times as large as in.
なお、ガス導入環２１から導入するガスはＮＯ２ガスに
限られるものではなく、０原子をその構成成分として含
むものであれば足りる。また、Ｈ２ガスをＡｒガスで希
釈したのは、引火爆発等の危険防止のためであり、本発
明の効果の上からは純Ｈ２ガスを用いた場合と差異はな
い。Note that the gas introduced from the gas introduction ring 21 is not limited to NO2 gas, and any gas containing 0 atoms as a constituent is sufficient. Further, the reason why H2 gas is diluted with Ar gas is to prevent dangers such as ignition and explosion, and the effect of the present invention is the same as when pure H2 gas is used.
以上説明したように本発明によれば、Ｈ２ガスプラズマ
にＯ原子を含むガスを混合し、反応せしめたガスを用い
ることにより、重金属汚染の少ない２００℃以下の低温
域において灰化速度を大きく低下させることなく被処理
基板を灰化処理することが可能となり、半導体デバイス
の生産性の向上、品質の向上を図ることができる。As explained above, according to the present invention, the ashing rate is greatly reduced in a low temperature range of 200°C or less where heavy metal contamination is less by mixing a gas containing O atoms with H2 gas plasma and using a reacted gas. It becomes possible to perform ashing treatment on the substrate to be processed without causing any damage, and it is possible to improve the productivity and quality of semiconductor devices.
第１図は本発明の一実施例を示す模式断面図、第２図は
従来例を示す模式断面図、
第３図は灰化速度の温度特性を示す図、である。
図において、
１）１）はプラズマ発生部、
２．１２はプラズマ輸送部、
３．１３は加熱支持体、
４．１４はマイクロ波導波管、
５．１５はガス導入口、
６．１６は石英窓、
７．１７はプラズマ生成室、
８．１８はシャワー牟反、
９．１９は被処理基板、
１０．２０は排気口、
２１はガス導入口、
３０は従来例に係る沃化速度の温度特性、４０は本発明
に係る沃化速度の温度特性、である。
堕を泉イダ１［；イ本る刀紀イ乙＊’Ｌのｋｍ牛ｆｆｉ
ｆｍコア ２ 図
オラたｌ！目の喫３シ伊］８示ず屑化誠Ｉの困１べ請目
引２５ ／ 図
蕃扱過度
（’Ｃ）
カｅイ乙戯のう里度キ呼・ヒＬ乏デ、ご「Ｅ輩 ３ 口FIG. 1 is a schematic sectional view showing an embodiment of the present invention, FIG. 2 is a schematic sectional view showing a conventional example, and FIG. 3 is a diagram showing temperature characteristics of ashing rate. In the figure, 1) 1) is a plasma generation part, 2.12 is a plasma transport part, 3.13 is a heating support, 4.14 is a microwave waveguide, 5.15 is a gas inlet, and 6.16 is quartz. window, 7.17 is a plasma generation chamber, 8.18 is a shower chamber, 9.19 is a substrate to be processed, 10.20 is an exhaust port, 21 is a gas inlet port, 30 is the temperature of the iodization rate according to the conventional example Characteristic 40 is the temperature characteristic of iodization rate according to the present invention. Fallen wo Izumi Ida 1
fm core 2 diagram! 25 / Excessive treatment of the enemy ('C) E-san 3 mouths
Claims (2)
加熱支持体（３）とを有し、前記加熱支持体（３）に支
持、加熱された被処理基板（９）の灰化処理を行う灰化
装置であって、 前記プラズマ輸送部（２）にガス導入口（２１）を設け
て成り、前記プラズマ発生部（１）で発生したプラズマ
が前記プラズマ輸送部（２）を通過する際、前記ガス導
入口（２１）から導入されたガスと混合されて前記被処
理基板（９）に到達するようにしたことを特徴とする灰
化装置。(1) Ashing of a substrate to be processed (9), which has a plasma generation section (1), a plasma transport section (2), and a heating support (3), and is supported and heated by the heating support (3). The ashing apparatus performs the treatment, and the plasma transport section (2) is provided with a gas inlet (21), and the plasma generated in the plasma generation section (1) passes through the plasma transport section (2). The ashing apparatus is characterized in that when the ashing process is performed, the ashing device mixes with the gas introduced from the gas inlet (21) and reaches the substrate to be processed (9).
マ発生部（１）でＨ＿２ガスプラズマを発生させ、前記
プラズマ輸送部（２）に設けたガス導入口（２１）から
Ｏ原子を含むガスを導入して被処理基板（９）の灰化処
理を行うことを特徴とする灰化方法。(2) In the ashing apparatus according to claim (1), H_2 gas plasma is generated in the plasma generation section (1), and contains O atoms from the gas introduction port (21) provided in the plasma transport section (2). An ashing method characterized in that a gas is introduced to ash a substrate to be processed (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63245207A JP2718092B2 (en) | 1988-09-29 | 1988-09-29 | Ashing apparatus and method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63245207A JP2718092B2 (en) | 1988-09-29 | 1988-09-29 | Ashing apparatus and method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0291937A true JPH0291937A (en) | 1990-03-30 |
| JP2718092B2 JP2718092B2 (en) | 1998-02-25 |
Family
ID=17130219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63245207A Expired - Fee Related JP2718092B2 (en) | 1988-09-29 | 1988-09-29 | Ashing apparatus and method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2718092B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002083802A (en) * | 2000-09-07 | 2002-03-22 | Yac Co Ltd | Dry processing device such as etching device and ashing device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5587438A (en) * | 1978-12-25 | 1980-07-02 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS63120424A (en) * | 1986-11-10 | 1988-05-24 | Semiconductor Energy Lab Co Ltd | Optical treatment device |
-
1988
- 1988-09-29 JP JP63245207A patent/JP2718092B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5587438A (en) * | 1978-12-25 | 1980-07-02 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS63120424A (en) * | 1986-11-10 | 1988-05-24 | Semiconductor Energy Lab Co Ltd | Optical treatment device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002083802A (en) * | 2000-09-07 | 2002-03-22 | Yac Co Ltd | Dry processing device such as etching device and ashing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2718092B2 (en) | 1998-02-25 |
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