JPS5022780A - - Google Patents
Info
- Publication number
- JPS5022780A JPS5022780A JP7437373A JP7437373A JPS5022780A JP S5022780 A JPS5022780 A JP S5022780A JP 7437373 A JP7437373 A JP 7437373A JP 7437373 A JP7437373 A JP 7437373A JP S5022780 A JPS5022780 A JP S5022780A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7437373A JPS539191B2 (en) | 1973-07-03 | 1973-07-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7437373A JPS539191B2 (en) | 1973-07-03 | 1973-07-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5022780A true JPS5022780A (en) | 1975-03-11 |
| JPS539191B2 JPS539191B2 (en) | 1978-04-04 |
Family
ID=13545289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7437373A Expired JPS539191B2 (en) | 1973-07-03 | 1973-07-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS539191B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51106641A (en) * | 1975-03-17 | 1976-09-21 | Matsushita Electric Ind Co Ltd | IONPUREETEINGUSOCHI |
| JPS51106642A (en) * | 1975-03-17 | 1976-09-21 | Matsushita Electric Ind Co Ltd | IONPUREETEINGUSOCHI |
| JPS51111484A (en) * | 1975-03-28 | 1976-10-01 | Matsushita Electric Ind Co Ltd | Manufacture of thin layer of vanadium dioxide |
| JPS5253778A (en) * | 1975-10-29 | 1977-04-30 | Yoichi Murayama | Ion plating apparatus |
| JPS571231A (en) * | 1980-06-04 | 1982-01-06 | Res Dev Corp Of Japan | Plasma chemical vapour deposition (cvd) device |
| JPH01317998A (en) * | 1988-06-17 | 1989-12-22 | Toshiba Corp | Retaining device |
| JP2022546072A (en) * | 2019-08-30 | 2022-11-02 | ダイソン・テクノロジー・リミテッド | deposition system |
-
1973
- 1973-07-03 JP JP7437373A patent/JPS539191B2/ja not_active Expired
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51106641A (en) * | 1975-03-17 | 1976-09-21 | Matsushita Electric Ind Co Ltd | IONPUREETEINGUSOCHI |
| JPS51106642A (en) * | 1975-03-17 | 1976-09-21 | Matsushita Electric Ind Co Ltd | IONPUREETEINGUSOCHI |
| JPS51111484A (en) * | 1975-03-28 | 1976-10-01 | Matsushita Electric Ind Co Ltd | Manufacture of thin layer of vanadium dioxide |
| JPS5814503B2 (en) * | 1975-03-28 | 1983-03-19 | 松下電器産業株式会社 | Nisanca vanadium |
| JPS5253778A (en) * | 1975-10-29 | 1977-04-30 | Yoichi Murayama | Ion plating apparatus |
| JPS5521109B2 (en) * | 1975-10-29 | 1980-06-07 | ||
| JPS571231A (en) * | 1980-06-04 | 1982-01-06 | Res Dev Corp Of Japan | Plasma chemical vapour deposition (cvd) device |
| JPH0133935B2 (en) * | 1980-06-04 | 1989-07-17 | Shingijutsu Kaihatsu Jigyodan | |
| JPH01317998A (en) * | 1988-06-17 | 1989-12-22 | Toshiba Corp | Retaining device |
| JP2022546072A (en) * | 2019-08-30 | 2022-11-02 | ダイソン・テクノロジー・リミテッド | deposition system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS539191B2 (en) | 1978-04-04 |