JPS55104919A - Manufacture of zinc oxide thin film - Google Patents

Manufacture of zinc oxide thin film

Info

Publication number
JPS55104919A
JPS55104919A JP970579A JP970579A JPS55104919A JP S55104919 A JPS55104919 A JP S55104919A JP 970579 A JP970579 A JP 970579A JP 970579 A JP970579 A JP 970579A JP S55104919 A JPS55104919 A JP S55104919A
Authority
JP
Japan
Prior art keywords
cpd
substance
thin film
target
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP970579A
Other languages
Japanese (ja)
Inventor
Mitsuo Sakakura
Kazuhisa Tsuchiya
Minoru Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP970579A priority Critical patent/JPS55104919A/en
Publication of JPS55104919A publication Critical patent/JPS55104919A/en
Pending legal-status Critical Current

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  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: To easily manufacture a ZnO thin film contg. an added substance by mixing a hydrogen cpd. or an org. cpd. of the substance into an O2 atmosphere for sputtering Zn followed by discharge.
CONSTITUTION: O2 and a hydrogen cpd. or an org. cpd. of a substance to be added. e.g. B2H6 are introduced into bell jar 10 in vapor phase, and by applying a DC electric field between substrate holder 11 and Zn target 12 plasm discharge is induced. The cpd. is decomposed in the plasma discharge zone and mixed into ZnO attached to a substrate by the reaction of Zn sputtered from target 12 and O2 in the atmosphere. This method is esp. suitable for use in burying B in the target, and the B is contained in a ZnO thin film in the form of molecular structure of B2O3. The amt. of the substance to be added is more easily adjusted as compared to a conventional method, so adjustment of the substance content of the film is easily accomplished.
COPYRIGHT: (C)1980,JPO&Japio
JP970579A 1979-02-01 1979-02-01 Manufacture of zinc oxide thin film Pending JPS55104919A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP970579A JPS55104919A (en) 1979-02-01 1979-02-01 Manufacture of zinc oxide thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP970579A JPS55104919A (en) 1979-02-01 1979-02-01 Manufacture of zinc oxide thin film

Publications (1)

Publication Number Publication Date
JPS55104919A true JPS55104919A (en) 1980-08-11

Family

ID=11727647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP970579A Pending JPS55104919A (en) 1979-02-01 1979-02-01 Manufacture of zinc oxide thin film

Country Status (1)

Country Link
JP (1) JPS55104919A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01242417A (en) * 1988-03-25 1989-09-27 Mitsubishi Metal Corp Production of transparent electrically conductive zinc oxide film
DE10017758B4 (en) * 1999-06-08 2007-02-08 LumiLeds Lighting, U.S., LLC, San Jose A method of forming transparent contacts on a p-type GaN layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01242417A (en) * 1988-03-25 1989-09-27 Mitsubishi Metal Corp Production of transparent electrically conductive zinc oxide film
DE10017758B4 (en) * 1999-06-08 2007-02-08 LumiLeds Lighting, U.S., LLC, San Jose A method of forming transparent contacts on a p-type GaN layer

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