JPS642315A - Formation of semiconductive carbon thin film - Google Patents

Formation of semiconductive carbon thin film

Info

Publication number
JPS642315A
JPS642315A JP15827287A JP15827287A JPS642315A JP S642315 A JPS642315 A JP S642315A JP 15827287 A JP15827287 A JP 15827287A JP 15827287 A JP15827287 A JP 15827287A JP S642315 A JPS642315 A JP S642315A
Authority
JP
Japan
Prior art keywords
target
thin film
carbon thin
chamber
graphite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15827287A
Other languages
Japanese (ja)
Other versions
JP2522309B2 (en
JPH012315A (en
Inventor
Misuzu Watanabe
Kazuhiko Kawakami
Yoshiki Morikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP62158272A priority Critical patent/JP2522309B2/en
Publication of JPS642315A publication Critical patent/JPS642315A/en
Publication of JPH012315A publication Critical patent/JPH012315A/en
Application granted granted Critical
Publication of JP2522309B2 publication Critical patent/JP2522309B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To form an Al-doped semiconductive carbon thin film in a safe and simple manner and to facilitate the control of dopant density by a method wherein a composite target formed by burying aluminum of the prescribed areal ratio is used for graphite.
CONSTITUTION: A composite graphite target 4 and opposing electrodes 5 are arranged in e vacuum chamber 1, and high frequency voltage is applied between both of them from a power supply 6 through the intermediary of a matching box 7. Al 11 of 0.3% in area ratio is buried in the target 4 to be used for graphite. After a substrate 10, with which the target 4 and a carbon thin film will be formed, has been provided in the chamber 1, the chamber 1 is depressed, mixed gas is introduced therein, and after the pressure in the chamber has been stabilized, the target 4 is sputtered by high frequency power, and a carbon thin film is formed on a substrate 10. In this case, the Al which will be buried into the target 4 is set at 0.1W10% in areal ratio, also PH2+He is set at 1.33W665 Pa.
COPYRIGHT: (C)1989,JPO&Japio
JP62158272A 1987-06-25 1987-06-25 Method for forming semiconducting carbon thin film Expired - Lifetime JP2522309B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62158272A JP2522309B2 (en) 1987-06-25 1987-06-25 Method for forming semiconducting carbon thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62158272A JP2522309B2 (en) 1987-06-25 1987-06-25 Method for forming semiconducting carbon thin film

Publications (3)

Publication Number Publication Date
JPS642315A true JPS642315A (en) 1989-01-06
JPH012315A JPH012315A (en) 1989-01-06
JP2522309B2 JP2522309B2 (en) 1996-08-07

Family

ID=15667981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62158272A Expired - Lifetime JP2522309B2 (en) 1987-06-25 1987-06-25 Method for forming semiconducting carbon thin film

Country Status (1)

Country Link
JP (1) JP2522309B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009173962A (en) * 2008-01-22 2009-08-06 Sony Corp Composite target for sputtering and manufacturing method of transparent conductive film using the same
JP2009293097A (en) * 2008-06-06 2009-12-17 Sony Corp Sputtering composite target, method for producing transparent conductive film using the same and transparent conductive film-fitted base material
CN106801218A (en) * 2017-02-15 2017-06-06 苏州思创源博电子科技有限公司 A kind of preparation method of carbon silver carbon semiconductor film material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009173962A (en) * 2008-01-22 2009-08-06 Sony Corp Composite target for sputtering and manufacturing method of transparent conductive film using the same
JP2009293097A (en) * 2008-06-06 2009-12-17 Sony Corp Sputtering composite target, method for producing transparent conductive film using the same and transparent conductive film-fitted base material
CN106801218A (en) * 2017-02-15 2017-06-06 苏州思创源博电子科技有限公司 A kind of preparation method of carbon silver carbon semiconductor film material

Also Published As

Publication number Publication date
JP2522309B2 (en) 1996-08-07

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