CN106801218A - A kind of preparation method of carbon silver carbon semiconductor film material - Google Patents
A kind of preparation method of carbon silver carbon semiconductor film material Download PDFInfo
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- CN106801218A CN106801218A CN201710082164.7A CN201710082164A CN106801218A CN 106801218 A CN106801218 A CN 106801218A CN 201710082164 A CN201710082164 A CN 201710082164A CN 106801218 A CN106801218 A CN 106801218A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M161/00—Lubricating compositions characterised by the additive being a mixture of a macromolecular compound and a non-macromolecular compound, each of these compounds being essential
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant compositions
- C10M2215/02—Amines, e.g. polyalkylene polyamines; Quaternary amines
- C10M2215/04—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2215/042—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms containing hydroxy groups; Alkoxylated derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2040/00—Specified use or application for which the lubricating composition is intended
- C10N2040/20—Metal working
- C10N2040/22—Metal working with essential removal of material, e.g. cutting, grinding or drilling
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of preparation method of carbon silver carbon semiconductor film material, the preparation method is used inserts one layer of silver metal layer between upper and lower two-layer carbon film layer, the free electron in inserted silver metal thin layer is utilized to the electron injection effect to upper and lower two-layer carbon film layer, improve the electron carrier density and electron mobility in thin-film material, reach the resistivity value for significantly reducing carbon film material, significantly improve the electric conductivity of carbon film material, and the Stability Analysis of Structures of the carbon/silver/C film for being formed, performance repeatability is strong.
Description
Technical field
The present invention relates to semi-conducting material manufacture field, and in particular to a kind of preparation side of carbon silver carbon semiconductor film material
Method.
Background technology
C film has sp2 and sp3 hydridization simultaneously, and this hybrid structure feature causes to be hardly formed freedom inside C film
Mobile electronics or holoe carrier, transporting for carrier are even more seriously hampered.One of feature for showing is, C film
The resistivity of material is very big.Accordingly, it would be desirable to material modification is carried out, to improve carrier number and the current-carrying in carbon film material
Transport factor, reduces the resistivity of carbon film material, so as to improve the electric conductivity of carbon film material.
To reduce the resistivity of carbon film material, its electric conductivity being improved, to meet carbon film material in semiconductor devices
The use in field.In the prior art, relatively successful way is that carbon is doped using metallic element, to carry out carbon
Material modification.
But, this use metallic element is doped to carbon, the method modified to carry out carbon material, and its principle is,
Metallic element is set to enter in carbon lattice, to replace carbon.Due to the difference of the aspects such as atomic radius, receiving and losing electrons ability, this
Plant doping techniques and a large amount of defects are necessarily formed in C film, so as to cause the unstability of the material structure of product and performance.
In a word, it is the uniformity of its properties of product, steady to carry out the modified of carbon film material using the technological means of doping
Qualitative relatively poor, the control difficulty of product quality is big.
The content of the invention
The present invention provides a kind of preparation method of carbon silver carbon semiconductor film material, and the preparation method is used in upper and lower two-layer
One layer of silver metal layer is inserted between carbon film layer, the free electron in inserted silver metal thin layer is utilized to upper and lower two-layer carbon film
The electron injection effect of layer, improves the electron carrier density and electron mobility in thin-film material, reaches that to significantly reduce carbon thin
The resistivity value of membrane material, significantly improves the electric conductivity of carbon film material, and the carbon/silver/C film for being formed knot
Structure stabilization, performance repeatability is strong.
To achieve these goals, the invention provides a kind of preparation method of carbon silver carbon semiconductor film material, the party
Method comprises the following steps：
（1）Substrate treatment
After by insulating substrate cutting and grinding, it is cleaned by ultrasonic 100-150s in alcohol, acetone and deionized water successively；Then, take
Go out, dried up with drying nitrogen；
（2）Insulating substrate after treatment is loaded into pallet, vacuum chamber is put into, and it is high vacuum that vacuum chamber is taken out, in nitrogen environment
Under, the temperature of insulating substrate is adjusted to 150-200 DEG C, nitrogen pressure is adjusted to 5-10Pa, using magnetically controlled DC sputtering technology, in perseverance
Under the conditions of fixed 35-45W sputtering powers, carbon target material is bombarded using the Nitrogen ion for ionizing out, in the upper surface of the insulating substrate
On, deposit ground floor carbon film layer；
（3）The temperature for depositing the insulating substrate for having ground floor carbon film layer is adjusted to 50-65 DEG C, nitrogen pressure is adjusted to 1-5Pa, used
Magnetically controlled DC sputtering technology, under the conditions of constant 40-45W sputtering powers, using the Ions Bombardment Ag metal targets for ionizing out,
On the surface of above-mentioned ground floor carbon film layer, redeposited one layer of Ag metal level；
（4）The temperature for depositing the insulating substrate for there are Ag metal levels is adjusted to 200-250 DEG C, nitrogen pressure is adjusted to 5-10Pa, used
Magnetically controlled DC sputtering technology, under the conditions of constant 35-40W sputtering powers, using the Ions Bombardment carbon target material for ionizing out, upper
State on the surface of Ag film layers, then second layer carbon film layer, obtain carbon silver carbon semiconductor film material.
Preferably, in the step（1）In, the cutting need to be carried out using cutting fluid, and the cutting fluid uses following technique
It is obtained：
Xiang Shuizhong sequentially adds polyethylene glycol, AEEA, triethanolamine, is well mixed, and stands 20min, adds FA/
QB chelating agents, mixing and stirring stands 30min, obtains cutting fluid, and the percentage by weight of the wherein each component of cutting fluid is：
Polyethylene glycol 15-25%, AEEA 20-25%, triethanolamine 5-10%, FA/QB chelating agent 10-15%, balance of water.
Specific embodiment
Embodiment one
After by insulating substrate cutting and grinding, it is cleaned by ultrasonic 100-150s in alcohol, acetone and deionized water successively；Then, take
Go out, dried up with drying nitrogen.The cutting need to be carried out using cutting fluid, and the cutting fluid is obtained using following technique：
Xiang Shuizhong sequentially adds polyethylene glycol, AEEA, triethanolamine, is well mixed, and stands 20min, adds FA/
QB chelating agents, mixing and stirring stands 30min, obtains cutting fluid, and the percentage by weight of the wherein each component of cutting fluid is：
Polyethylene glycol 15%, AEEA 20%, triethanolamine 5%, FA/QB chelating agents 10%, balance of water.
Insulating substrate after treatment is loaded into pallet, vacuum chamber is put into, and it is high vacuum that vacuum chamber is taken out, in nitrogen environment
Under, the temperature of insulating substrate is adjusted to 150 DEG C, nitrogen pressure is adjusted to 5Pa, using magnetically controlled DC sputtering technology, in constant 35W
Under the conditions of sputtering power, carbon target material is bombarded using the Nitrogen ion for ionizing out, on the upper surface of the insulating substrate, deposition first
Layer carbon film layer.
The temperature for depositing the insulating substrate for having ground floor carbon film layer is adjusted to 50 DEG C, nitrogen pressure is adjusted to 1Pa, using direct current
Magnetron sputtering technique, under the conditions of constant 40W sputtering powers, using the Ions Bombardment Ag metal targets for ionizing out, above-mentioned
On the surface of ground floor carbon film layer, redeposited one layer of Ag metal level.
The temperature for depositing the insulating substrate for there are Ag metal levels is adjusted to 200 DEG C, nitrogen pressure is adjusted to 5Pa, using DC magnetic
Control sputtering technology, under the conditions of constant 35W sputtering powers, using the Ions Bombardment carbon target material for ionizing out, in above-mentioned Ag film layers
Surface on, then second layer carbon film layer obtains carbon silver carbon semiconductor film material.
Embodiment two
After by insulating substrate cutting and grinding, it is cleaned by ultrasonic 150s in alcohol, acetone and deionized water successively；Then, take out, use
Drying nitrogen is dried up.The cutting need to be carried out using cutting fluid, and the cutting fluid is obtained using following technique：
Xiang Shuizhong sequentially adds polyethylene glycol, AEEA, triethanolamine, is well mixed, and stands 20min, adds FA/
QB chelating agents, mixing and stirring stands 30min, obtains cutting fluid, and the percentage by weight of the wherein each component of cutting fluid is：
Polyethylene glycol 25%, AEEA 25%, triethanolamine 10%, FA/QB chelating agents 15%, balance of water.
Insulating substrate after treatment is loaded into pallet, vacuum chamber is put into, and it is high vacuum that vacuum chamber is taken out, in nitrogen environment
Under, the temperature of insulating substrate is adjusted to 200 DEG C, nitrogen pressure is adjusted to 10Pa, using magnetically controlled DC sputtering technology, constant
Under the conditions of 45W sputtering powers, carbon target material is bombarded using the Nitrogen ion for ionizing out, on the upper surface of the insulating substrate, deposition
Ground floor carbon film layer.
The temperature for depositing the insulating substrate for having ground floor carbon film layer is adjusted to 65 DEG C, nitrogen pressure is adjusted to 5Pa, using direct current
Magnetron sputtering technique, under the conditions of constant 45W sputtering powers, using the Ions Bombardment Ag metal targets for ionizing out, above-mentioned
On the surface of ground floor carbon film layer, redeposited one layer of Ag metal level.
The temperature for depositing the insulating substrate for there are Ag metal levels is adjusted to 250 DEG C, nitrogen pressure is adjusted to 10Pa, using DC magnetic
Control sputtering technology, under the conditions of constant 40W sputtering powers, using the Ions Bombardment carbon target material for ionizing out, in above-mentioned Ag film layers
Surface on, then second layer carbon film layer obtains carbon silver carbon semiconductor film material.
Claims (2)
1. a kind of preparation method of carbon silver carbon semiconductor film material, the method comprises the following steps：
（1）Substrate treatment
After by insulating substrate cutting and grinding, it is cleaned by ultrasonic 100-150s in alcohol, acetone and deionized water successively；Then, take
Go out, dried up with drying nitrogen；
（2）Insulating substrate after treatment is loaded into pallet, vacuum chamber is put into, and it is high vacuum that vacuum chamber is taken out, in nitrogen environment
Under, the temperature of insulating substrate is adjusted to 150-200 DEG C, nitrogen pressure is adjusted to 5-10Pa, using magnetically controlled DC sputtering technology, in perseverance
Under the conditions of fixed 35-45W sputtering powers, carbon target material is bombarded using the Nitrogen ion for ionizing out, in the upper surface of the insulating substrate
On, deposit ground floor carbon film layer；
（3）The temperature for depositing the insulating substrate for having ground floor carbon film layer is adjusted to 50-65 DEG C, nitrogen pressure is adjusted to 1-5Pa, used
Magnetically controlled DC sputtering technology, under the conditions of constant 40-45W sputtering powers, using the Ions Bombardment Ag metal targets for ionizing out,
On the surface of above-mentioned ground floor carbon film layer, redeposited one layer of Ag metal level；
（4）The temperature for depositing the insulating substrate for there are Ag metal levels is adjusted to 200-250 DEG C, nitrogen pressure is adjusted to 5-10Pa, used
Magnetically controlled DC sputtering technology, under the conditions of constant 35-40W sputtering powers, using the Ions Bombardment carbon target material for ionizing out, upper
State on the surface of Ag film layers, then second layer carbon film layer, obtain carbon silver carbon semiconductor film material.
2. the method for claim 1, it is characterised in that in the step（1）In, the cutting need to be entered using cutting fluid
OK, the cutting fluid is obtained using following technique：
Xiang Shuizhong sequentially adds polyethylene glycol, AEEA, triethanolamine, is well mixed, and stands 20min, adds FA/
QB chelating agents, mixing and stirring stands 30min, obtains cutting fluid, and the percentage by weight of the wherein each component of cutting fluid is：
Polyethylene glycol 15-25%, AEEA 20-25%, triethanolamine 5-10%, FA/QB chelating agent 10-15%, balance of water.
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| CN201710082164.7A CN106801218A (en) | 2017-02-15 | 2017-02-15 | A kind of preparation method of carbon silver carbon semiconductor film material |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS642315A (en) * | 1987-06-25 | 1989-01-06 | Meidensha Corp | Formation of semiconductive carbon thin film |
| CN102169963A (en) * | 2010-12-22 | 2011-08-31 | 涂洪明 | Carbon thin layer electrode |
| CN102185142A (en) * | 2011-04-08 | 2011-09-14 | 厦门大学 | Composite carbon cathode material for lithium ion battery and preparation method thereof |
| CN102808149A (en) * | 2012-08-10 | 2012-12-05 | 许子寒 | Alloy method for preparing large-area graphene film |
| CN104195516A (en) * | 2014-08-26 | 2014-12-10 | 中国科学院宁波材料技术与工程研究所 | Metal-doped amorphous carbon piezoresistive sensing element, and preparation method and control method thereof |
| CN104388902A (en) * | 2014-12-03 | 2015-03-04 | 中国科学院宁波材料技术与工程研究所 | Carbon-based coating having high electrical conductivity on surface of substrate and preparation method of coating |
-
2017
- 2017-02-15 CN CN201710082164.7A patent/CN106801218A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS642315A (en) * | 1987-06-25 | 1989-01-06 | Meidensha Corp | Formation of semiconductive carbon thin film |
| CN102169963A (en) * | 2010-12-22 | 2011-08-31 | 涂洪明 | Carbon thin layer electrode |
| CN102185142A (en) * | 2011-04-08 | 2011-09-14 | 厦门大学 | Composite carbon cathode material for lithium ion battery and preparation method thereof |
| CN102808149A (en) * | 2012-08-10 | 2012-12-05 | 许子寒 | Alloy method for preparing large-area graphene film |
| CN104195516A (en) * | 2014-08-26 | 2014-12-10 | 中国科学院宁波材料技术与工程研究所 | Metal-doped amorphous carbon piezoresistive sensing element, and preparation method and control method thereof |
| CN104388902A (en) * | 2014-12-03 | 2015-03-04 | 中国科学院宁波材料技术与工程研究所 | Carbon-based coating having high electrical conductivity on surface of substrate and preparation method of coating |
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