JPS5647570A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5647570A
JPS5647570A JP12420979A JP12420979A JPS5647570A JP S5647570 A JPS5647570 A JP S5647570A JP 12420979 A JP12420979 A JP 12420979A JP 12420979 A JP12420979 A JP 12420979A JP S5647570 A JPS5647570 A JP S5647570A
Authority
JP
Japan
Prior art keywords
gas
less
ccl
cathode
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12420979A
Other languages
Japanese (ja)
Inventor
Yasuhiro Horiike
Takashi Yamazaki
Tetsuo Kurisaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokuda Seisakusho Co Ltd
Original Assignee
Toshiba Corp
Tokuda Seisakusho Co Ltd
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokuda Seisakusho Co Ltd, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12420979A priority Critical patent/JPS5647570A/en
Priority to DE3030814A priority patent/DE3030814C2/en
Priority to US06/177,910 priority patent/US4341593A/en
Priority to FR8018069A priority patent/FR2463976A1/en
Priority to GB8026885A priority patent/GB2059879B/en
Publication of JPS5647570A publication Critical patent/JPS5647570A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent the under cutting and the resist swelling effectively by a method wherein CCl4 gas and Cl2 gas are mixed to form a gas plasma by the gas having a pressure ratio of Cl2/CCl4+Cl2 controlled to a specific value or less and the voltage depression of a cathode is controlled to a specific valve or less.
CONSTITUTION: The pressure in a vacuum container 1 is reduced to 0.01 Torr or less by exhaust means such as a rotary pump or the like and the CCl4 gas and Cl2 gas are introduced from gas introducing ports 2, 3 respectively and the pressure ratio of Cl2/CCl4+Cl2 is controlled to 0.6 or less. Herein, if high frequency electric power is applied to generate the glow discharge between electrodes 4, 5, a gas plasma is formed and a wafer 9 having an Al film deposited thereon on the cathode 4 is etched. At this time, the voltage depression of the cathode 4 is lowered to less than -20V. Thereby, the under cutting and the resist swelling are prevented.
COPYRIGHT: (C)1981,JPO&Japio
JP12420979A 1979-08-17 1979-09-28 Plasma etching method Pending JPS5647570A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP12420979A JPS5647570A (en) 1979-09-28 1979-09-28 Plasma etching method
DE3030814A DE3030814C2 (en) 1979-08-17 1980-08-14 Process for plasma etching a workpiece
US06/177,910 US4341593A (en) 1979-08-17 1980-08-14 Plasma etching method for aluminum-based films
FR8018069A FR2463976A1 (en) 1979-08-17 1980-08-18 PLASMA ETCHING PROCESS FOR ALUMINUM FILMS
GB8026885A GB2059879B (en) 1979-08-17 1980-08-18 Plasma etching method for aluminumbased films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12420979A JPS5647570A (en) 1979-09-28 1979-09-28 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS5647570A true JPS5647570A (en) 1981-04-30

Family

ID=14879686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12420979A Pending JPS5647570A (en) 1979-08-17 1979-09-28 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5647570A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897171A (en) * 1985-11-26 1990-01-30 Tadahiro Ohmi Wafer susceptor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897171A (en) * 1985-11-26 1990-01-30 Tadahiro Ohmi Wafer susceptor

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