JPS5647570A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS5647570A JPS5647570A JP12420979A JP12420979A JPS5647570A JP S5647570 A JPS5647570 A JP S5647570A JP 12420979 A JP12420979 A JP 12420979A JP 12420979 A JP12420979 A JP 12420979A JP S5647570 A JPS5647570 A JP S5647570A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- less
- ccl
- cathode
- controlled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent the under cutting and the resist swelling effectively by a method wherein CCl4 gas and Cl2 gas are mixed to form a gas plasma by the gas having a pressure ratio of Cl2/CCl4+Cl2 controlled to a specific value or less and the voltage depression of a cathode is controlled to a specific valve or less.
CONSTITUTION: The pressure in a vacuum container 1 is reduced to 0.01 Torr or less by exhaust means such as a rotary pump or the like and the CCl4 gas and Cl2 gas are introduced from gas introducing ports 2, 3 respectively and the pressure ratio of Cl2/CCl4+Cl2 is controlled to 0.6 or less. Herein, if high frequency electric power is applied to generate the glow discharge between electrodes 4, 5, a gas plasma is formed and a wafer 9 having an Al film deposited thereon on the cathode 4 is etched. At this time, the voltage depression of the cathode 4 is lowered to less than -20V. Thereby, the under cutting and the resist swelling are prevented.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12420979A JPS5647570A (en) | 1979-09-28 | 1979-09-28 | Plasma etching method |
DE3030814A DE3030814C2 (en) | 1979-08-17 | 1980-08-14 | Process for plasma etching a workpiece |
US06/177,910 US4341593A (en) | 1979-08-17 | 1980-08-14 | Plasma etching method for aluminum-based films |
FR8018069A FR2463976A1 (en) | 1979-08-17 | 1980-08-18 | PLASMA ETCHING PROCESS FOR ALUMINUM FILMS |
GB8026885A GB2059879B (en) | 1979-08-17 | 1980-08-18 | Plasma etching method for aluminumbased films |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12420979A JPS5647570A (en) | 1979-09-28 | 1979-09-28 | Plasma etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5647570A true JPS5647570A (en) | 1981-04-30 |
Family
ID=14879686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12420979A Pending JPS5647570A (en) | 1979-08-17 | 1979-09-28 | Plasma etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5647570A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4897171A (en) * | 1985-11-26 | 1990-01-30 | Tadahiro Ohmi | Wafer susceptor |
-
1979
- 1979-09-28 JP JP12420979A patent/JPS5647570A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4897171A (en) * | 1985-11-26 | 1990-01-30 | Tadahiro Ohmi | Wafer susceptor |
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