JPH0472378B2 - - Google Patents
Info
- Publication number
- JPH0472378B2 JPH0472378B2 JP57000615A JP61582A JPH0472378B2 JP H0472378 B2 JPH0472378 B2 JP H0472378B2 JP 57000615 A JP57000615 A JP 57000615A JP 61582 A JP61582 A JP 61582A JP H0472378 B2 JPH0472378 B2 JP H0472378B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- electrode
- plasma
- cylindrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 58
- 239000010409 thin film Substances 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 本発明はプラズマCVD装置に関する。[Detailed description of the invention] The present invention relates to a plasma CVD apparatus.
従来、電子写真用ドラムとして使用されるAl
ドラム等の円筒状金属サブストレートの表面に、
例えばアモルフアスシリコンの薄膜を形成する手
段として、第１図示のようなプラズマCVD
（Chemical Vapor Deposition）装置が知られて
いる。この装置は、Alドラムその他の円筒状金
属サブストレートａを回転自在に収容した石英か
ら成る真空処理室ｂ内にSiH4等のガスを導入し、
該ガスを該処理室ｂの外周に設けたコイルからな
るプラズマ発生装置ｃにより励起および電離して
反応を起こさしめ、その生成物を該サブストレー
トａの周面に付着させて薄膜を形成するが、該サ
ブストレートａが長いとその周面に均一な厚さの
薄膜が得られず、また該コイルの巻数を増大させ
ると該処理室ｂ内のプラズマ密度が低下して良好
な薄膜が得られない等の不都合があつた。 Conventionally, Al used as drums for electrophotography
On the surface of a cylindrical metal substrate such as a drum,
For example, as a means of forming a thin film of amorphous silicon, plasma CVD as shown in Figure 1 is used.
(Chemical Vapor Deposition) devices are known. This device introduces a gas such as SiH 4 into a vacuum processing chamber b made of quartz that rotatably houses an Al drum or other cylindrical metal substrate a.
The gas is excited and ionized by a plasma generator c consisting of a coil provided on the outer periphery of the processing chamber b to cause a reaction, and the product is deposited on the circumferential surface of the substrate a to form a thin film. If the substrate a is long, a thin film with a uniform thickness cannot be obtained on its circumferential surface, and if the number of turns of the coil is increased, the plasma density in the processing chamber b decreases, making it difficult to obtain a good thin film. There were some inconveniences, such as not having one.
本発明は、こうした不都合のない装置を提供す
ることをその目的としたもので、その特定発明
は、円筒状金属サブストレートを回転自在に収容
した真空処理室内にソースガスを導入し、該ガス
を１対の放電電極を備えたプラズマ発生装置によ
り励起および電離して反応を起さしめ、その生成
物を該サブストレートの周面に付着させて薄膜を
形成するようにしたものに於て、該プラズマ発生
装置の一方の放電電極を前記サブストレートを囲
繞する筒状の電極で構成すると共に該電極内を中
空に形成して前記ガスが導入される中空円筒状の
ガス室とし、該ガス室の内側面に複数個のガス噴
出口を設け、前記サブストレートを該プラズマ発
生装置の他方の放電電極として成り、その第２発
明は、円筒状金属サブストレートを回転自在に収
容した真空処理室内にソースガスを導入し、該ガ
スを１対の放電電極を備えたプラズマ発生装置に
より励起および電離して反応を起さしめ、その生
成物を該サブストレートの周面に付着させて薄膜
を形成するようにしたものに於て、該プラズマ発
生装置の一方の放電電極を前記サブストレートを
囲繞する筒状の電極で構成すると共に該電極内を
中空に形成して前記ガスが導入される中空円筒状
のガス室とし、該ガス室の内側面に複数個のガス
噴出口を設け、前記サブストレートを該プラズマ
発生装置の他方の放電電極とし、更に前記サブス
トレートの両端に着脱自在の筒状の延長部を設
け、該サブストレートと該延長部との全長に亘り
該電極と対向させて成る。 The object of the present invention is to provide an apparatus free from such inconveniences, and the specific invention involves introducing a source gas into a vacuum processing chamber rotatably housing a cylindrical metal substrate, and discharging the gas. In a plasma generating device equipped with a pair of discharge electrodes, a reaction is caused by excitation and ionization, and the resulting product is deposited on the peripheral surface of the substrate to form a thin film. One discharge electrode of the plasma generator is constituted by a cylindrical electrode surrounding the substrate, and the inside of the electrode is formed hollow to form a hollow cylindrical gas chamber into which the gas is introduced, and the gas chamber is A plurality of gas ejection ports are provided on the inner surface, and the substrate serves as the other discharge electrode of the plasma generating device. A gas is introduced, and the gas is excited and ionized by a plasma generator equipped with a pair of discharge electrodes to cause a reaction, and the product is deposited on the peripheral surface of the substrate to form a thin film. In the plasma generating device, one discharge electrode is constituted by a cylindrical electrode surrounding the substrate, and the inside of the electrode is formed hollow so that the gas is introduced into the hollow cylindrical electrode. a gas chamber, a plurality of gas jet ports are provided on the inner surface of the gas chamber, the substrate is the other discharge electrode of the plasma generating device, and further, detachable cylindrical extensions are provided at both ends of the substrate. is provided, facing the electrode over the entire length of the substrate and the extension.
本発明の実施例を図面につき説明するに、その
第２図に於て、符号１は真空処理室、２は中空筒
状のAlシリンダからなるサブストレート、３は
該処理室１の下方に設けたサブストレート２の回
転装置で、サブストレート２はその中心軸を該回
転装置３の回転軸に合致させて取付けされ、該処
理室１内で回転する。４は該処理室１の側方に設
けた例えばSiH4ガスを導入するガス導入孔、５
は真空排気孔である。該処理室１内に導入された
SiH4等のガスは、該処理室１内の１対の放電電
極から成るプラズマ発生装置ドアにより励起およ
び電離され、反応を起してその生成物がアース電
位のサブストレート２の周面に付着し、モルフア
スシリコン等の薄膜を形成する。該プラズマ発生
装置６の一方の放電電極は該サブストレート２を
囲繞する内外２重の筒体１４，１６からなる電極
７にて構成され、他方の放電電極はアース電位の
サブストレート２を利用し、該電極７に１極をア
ースに落としたRF電源が接続されると、アース
に接続した該サブストレート２との間隔８内に比
較的密度の高い安定したプラズマが発生し、該サ
ブストレート２の周面から電極７までの距離をほ
ぼ均一となし得るので該サブストレート２に均一
な薄膜を形成し得る。９はサブストレート２の内
側からこれを加熱するヒータである。 An embodiment of the present invention will be described with reference to the drawings. In FIG. 2, reference numeral 1 denotes a vacuum processing chamber, 2 a substrate made of a hollow cylindrical Al cylinder, and 3 installed below the processing chamber 1. In this rotating device for a substrate 2, the substrate 2 is mounted with its central axis aligned with the rotation axis of the rotating device 3, and is rotated within the processing chamber 1. 4 is a gas introduction hole provided on the side of the processing chamber 1 for introducing, for example, SiH 4 gas; 5
is a vacuum exhaust hole. introduced into the processing chamber 1
A gas such as SiH 4 is excited and ionized by a plasma generator door consisting of a pair of discharge electrodes in the processing chamber 1, causes a reaction, and its products adhere to the circumferential surface of the substrate 2 at ground potential. Then, a thin film of morphous silicon or the like is formed. One discharge electrode of the plasma generating device 6 is constituted by an electrode 7 consisting of a dual inner and outer cylinder 14 and 16 surrounding the substrate 2, and the other discharge electrode utilizes the substrate 2 at ground potential. , when an RF power source with one pole grounded is connected to the electrode 7, a relatively dense and stable plasma is generated within a distance 8 between the substrate 2 and the substrate 2, which is connected to the ground. Since the distance from the circumferential surface of the substrate 2 to the electrode 7 can be made substantially uniform, a uniform thin film can be formed on the substrate 2. A heater 9 heats the substrate 2 from inside.
該真空処理室１内に導入されるSiH4等のガス
は、その一部がサブストレート２の薄膜形成に消
費され、残部は真空排気孔５から排気されるが、
該ガスを前記電極７の筒体１４，１６間に形成さ
れる中空円筒状のガス室１１内にガス導入孔４を
介して導入し、該ガス室１１内にて一旦静圧にさ
れたガスをサブストレート２と対向する内側の筒
体１６からなる内側面の複数個のガス噴出口１２
から該サブストレート２との間隔８内にほぼ均一
な速度で噴出させ、かくて該ガスは該排気孔５に
吸込まれるまでの間に比較的長い時間プラズマ雰
囲気にある間隔８内に滞在して該ガスの生成物が
サブストレート２の周面に効率良く付着し反応効
率が向上する。尚、該電極７とその外周のシール
ド１７との間隙１０をパツシエンの法則に従う微
小なものに形成して、そこにプラズマ放電が発生
しないようにした。また、該ガス噴出口１２を例
えば第４図に見られるように、ガス導入孔４側の
筒体１６ａに設けられる穴数を変えることによつ
てサブストレート２の周囲に均一にガスが噴出さ
れ、その分布状態が向上し、また各ガス噴出口１
２の口径を変えることによつて、ガスの種類、圧
力等が変わつても比較的簡単に均一のガス分布が
得られるように調節することが出来る。さらに、
該電極７の外側の筒体１４はその外周のアースシ
ールド１７に絶縁碍子１３を介して取付けされる
ようにし、内側の筒体１６を両端のリング１５，
１５を介して外側の筒体１４に着脱自在に取付
け、該サブストレート２の寸法が変わつた場合、
該リング１５，１５及び内側の筒体１６を外側の
筒体１４から取外して任意に間隔８を調節出来る
と共に簡単に該筒体１６の清掃を行なえるように
した。 A part of the gas such as SiH 4 introduced into the vacuum processing chamber 1 is consumed for forming a thin film on the substrate 2, and the rest is exhausted from the vacuum exhaust hole 5.
The gas is introduced into the hollow cylindrical gas chamber 11 formed between the cylindrical bodies 14 and 16 of the electrode 7 through the gas introduction hole 4, and the gas is once brought to static pressure within the gas chamber 11. a plurality of gas jet ports 12 on the inner surface of the inner cylinder 16 facing the substrate 2;
The gas is ejected at a substantially uniform speed into the space 8 between the gas and the substrate 2, and thus the gas remains in the space 8 in the plasma atmosphere for a relatively long time before being sucked into the exhaust hole 5. The products of the gas are efficiently attached to the peripheral surface of the substrate 2, and the reaction efficiency is improved. Incidentally, the gap 10 between the electrode 7 and the shield 17 on its outer periphery was formed to be minute in accordance with Patsien's law to prevent plasma discharge from occurring there. Furthermore, as shown in FIG. 4, for example, by changing the number of holes provided in the cylinder body 16a on the side of the gas introduction hole 4, the gas can be uniformly ejected around the substrate 2. , its distribution state is improved, and each gas outlet 1
By changing the diameter of 2, even if the type of gas, pressure, etc. are changed, it can be adjusted relatively easily so that a uniform gas distribution can be obtained. moreover,
The outer cylindrical body 14 of the electrode 7 is attached to the earth shield 17 on its outer periphery via the insulator 13, and the inner cylindrical body 16 is attached to the rings 15 at both ends.
It is detachably attached to the outer cylindrical body 14 via the substrate 15, and when the dimensions of the substrate 2 change,
The rings 15, 15 and the inner cylindrical body 16 can be removed from the outer cylindrical body 14 to adjust the distance 8 as desired, and the cylindrical body 16 can be easily cleaned.
該筒状の電極７をサブストレート２よりも多少
長手に構成しても、該電極７の上下端部に於ける
プラズマ放電の不均一により該電極７の端部に対
向するサブストレート２の周面には厚さの多少と
も不均一な薄膜が形成され易いが、該サブストレ
ート２の上下の各端部にカプラー１９，１９を介
してAl等からなる延長部２０，２０を着脱自在
に取付け、サブストレート２の上下端部と電極７
との間で放電不均一が生ずるを防止するようにし
た。尚、サブストレート２の長さが短いものであ
る場合、その複数個を該カプラー１９を介して接
続し、各サブストレート２に同時に薄膜を形成さ
せることも可能である。 Even if the cylindrical electrode 7 is configured to be somewhat longer than the substrate 2, the periphery of the substrate 2 facing the end of the electrode 7 may be uneven due to non-uniform plasma discharge at the upper and lower ends of the electrode 7. Although a thin film with a more or less uneven thickness is likely to be formed on the surface, extension parts 20, 20 made of Al or the like are removably attached to the upper and lower ends of the substrate 2 via couplers 19, 19. , the upper and lower ends of the substrate 2 and the electrode 7
This is to prevent non-uniform discharge between the two. In addition, when the length of the substrate 2 is short, it is also possible to connect a plurality of them via the coupler 19 and form a thin film on each substrate 2 at the same time.
その作動を説明するに、Alシリンダ等のサブ
ストレート２の両端に延長部２０，２０を設けて
これを筒状の電極７内に収容し、真空処理室１内
を真空排気したのちヒータ９でのサブストレート
２の加熱と回転装置３によるサブストレート２の
回転を行ない、さらにガス室１１のガス噴出口１
２を介してSiH4等の反応ガスを均一な間隔８内
に均一に噴出させつつ電極７に通電すると該間隔
８内に比較的密度の高いプラズマが発生し、該ガ
スは排気孔５から排出されるまでの時間のうち比
較的長い時間該プラズマ内に存在してその多くが
電離され、その成分が該サブストレート２の周面
に比較的効率的良く均一な厚さで薄膜状に付着す
る。 To explain its operation, extensions 20, 20 are provided at both ends of a substrate 2 such as an Al cylinder, and this is housed in a cylindrical electrode 7. After the inside of the vacuum processing chamber 1 is evacuated, the heater 9 is turned on. The substrate 2 is heated and the substrate 2 is rotated by the rotation device 3, and the gas outlet 1 of the gas chamber 11 is heated.
When the electrode 7 is energized while a reactive gas such as SiH 4 is ejected uniformly within the uniform interval 8 through the electrode 2, relatively dense plasma is generated within the interval 8, and the gas is discharged from the exhaust hole 5. It remains in the plasma for a relatively long time until it is ionized, and most of it is ionized, and its components adhere to the peripheral surface of the substrate 2 relatively efficiently and in the form of a thin film with a uniform thickness. .
このように、本発明の特定発明によるときは、
円筒状金属サブストレートを囲繞する筒状の電極
を中空に形成して前記ガスが導入される中空円筒
状のガス室とし、該ガス室の内側面に複数個のガ
ス噴出口を設けたので、該電極とサブストレート
との間隔が均一になりしかも該間隔に均一にガス
を分布させて比較的長時間該ガスを間隔内に滞在
させることが出来、密度の高い安定したプラズマ
を発生させて均一な薄膜をサブストレートに効率
良く形成でき、その第２発明によるときは、該サ
ブストレートの両端に着脱自在の筒状の延長部を
設け、該サブストレートと該延長部との全長に亘
り該筒状の電極と対向させたので、上記第１発明
の効果に加えて、ガスの流れを一様にし、且つサ
ブストレートの端部と電極との間の異常放電の発
生を防止でき、サブストレートに放電不均一によ
る薄膜が形成されることがなく、より一層均一性
の良い薄膜を形成できる効果がある。 In this way, according to the specific invention of the present invention,
A cylindrical electrode surrounding a cylindrical metal substrate is formed hollow to form a hollow cylindrical gas chamber into which the gas is introduced, and a plurality of gas jet ports are provided on the inner surface of the gas chamber. The gap between the electrode and the substrate becomes uniform, and the gas can be evenly distributed in the gap, allowing the gas to stay within the gap for a relatively long time, generating a stable plasma with high density and uniform plasma. According to the second invention, a removable cylindrical extension part is provided at both ends of the substrate, and the cylindrical extension part is formed over the entire length of the substrate and the extension part. In addition to the effect of the first invention, the gas flow is made uniform and abnormal discharge can be prevented from occurring between the end of the substrate and the electrode, and the electrode is placed opposite the substrate. This has the effect that a thin film with even better uniformity can be formed without forming a thin film due to non-uniform discharge.
第１図は従来例の説明線図、第２図は本発明の
実施例の截断側面図、第３図は第２図の截断平面
図、第４図は電極の一部を截除した斜視図であ
る。
１……真空処理室、２……サブストレート、４
……ガス導入孔、６……プラズマ発生装置、７…
…電極、１１……ガス室、１２……ガス噴出口、
２０，２０……延長部。
Fig. 1 is an explanatory diagram of the conventional example, Fig. 2 is a cutaway side view of the embodiment of the present invention, Fig. 3 is a cutaway plan view of Fig. 2, and Fig. 4 is a perspective view with a part of the electrode cut away. It is a diagram. 1... Vacuum processing chamber, 2... Substrate, 4
...Gas introduction hole, 6...Plasma generator, 7...
...electrode, 11...gas chamber, 12...gas outlet,
20, 20...extension part.
Claims (1)
した真空処理室内にソースガスを導入し、該ガス
を１対の放電電極を備えたプラズマ発生装置によ
り励起および電離して反応を起さしめ、その生成
物を該サブストレートの周面に付着させて薄膜を
形成するようにしたものに於て、該プラズマ発生
装置の一方の放電電極を前記サブストレートを囲
繞する筒状の電極で構成すると共に該電極内を中
空に形成して前記ガスが導入される中空円筒状の
ガス室とし、該ガス室の内側面に複数個のガス噴
出口を設け、前記サブストレートを該プラズマ発
生装置の他方の放電電極として成るプラズマ
CVD装置。 ２ 円筒状金属サブストレートを回転自在に収容
した真空処理室内にソースガスを導入し、該ガス
を１対の放電電極を備えたプラズマ発生装置によ
り励起および電離して反応を起さしめ、その生成
物を該サブストレートの周面に付着させて薄膜を
形成するようにしたものに於て、該プラズマ発生
装置の一方の放電電極を前記サブストレートを囲
繞する筒状の電極で構成すると共に該電極内を中
空に形成して前記ガスが導入される中空円筒状の
ガス室とし、該ガス室の内側面に複数個のガス噴
出口を設け、前記サブストレートを該プラズマ発
生装置の他方の放電電極とし、更に前記サブスト
レートの両端に着脱自在の筒状の延長部を設け、
該サブストレートと該延長部との全長に亘り該電
極と対向させて成るプラズマCVD装置。[Claims] 1. A source gas is introduced into a vacuum processing chamber that rotatably accommodates a cylindrical metal substrate, and the gas is excited and ionized by a plasma generator equipped with a pair of discharge electrodes to cause a reaction. in which one discharge electrode of the plasma generator is connected to a cylindrical electrode surrounding the substrate, and the product is attached to the circumferential surface of the substrate to form a thin film. The inside of the electrode is formed hollow to form a hollow cylindrical gas chamber into which the gas is introduced, a plurality of gas jet ports are provided on the inner surface of the gas chamber, and the substrate is used to generate the plasma. Plasma as the other discharge electrode of the device
CVD equipment. 2 A source gas is introduced into a vacuum processing chamber that rotatably accommodates a cylindrical metal substrate, and the gas is excited and ionized by a plasma generator equipped with a pair of discharge electrodes to cause a reaction and generate In a device in which a thin film is formed by attaching a substance to the circumferential surface of the substrate, one discharge electrode of the plasma generating device is constituted by a cylindrical electrode surrounding the substrate, and the electrode A hollow cylindrical gas chamber is formed with a hollow interior to introduce the gas, a plurality of gas jet ports are provided on the inner surface of the gas chamber, and the substrate is connected to the other discharge electrode of the plasma generator. and further provided with removable cylindrical extensions at both ends of the substrate,
A plasma CVD apparatus comprising the substrate and the extension portion facing the electrode over the entire length thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61582A JPS58118111A (en) | 1982-01-07 | 1982-01-07 | Plasma cvd apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61582A JPS58118111A (en) | 1982-01-07 | 1982-01-07 | Plasma cvd apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58118111A JPS58118111A (en) | 1983-07-14 |
| JPH0472378B2 true JPH0472378B2 (en) | 1992-11-18 |
Family
ID=11478632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61582A Granted JPS58118111A (en) | 1982-01-07 | 1982-01-07 | Plasma cvd apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58118111A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147026A (en) * | 1982-02-24 | 1983-09-01 | Toshiba Corp | Apparatus for film formation by glow discharge |
| JPS6086276A (en) * | 1983-10-17 | 1985-05-15 | Canon Inc | Formation of deposited film by discharge |
| CN102335580A (en) * | 2011-06-21 | 2012-02-01 | 浙江大学 | Apparatus and method for preparing group IV nanoparticles with capacitive coupling plasma |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391664A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Plasma cvd device |
| JPS56121631A (en) * | 1980-02-29 | 1981-09-24 | Canon Inc | Film forming device |
| JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
-
1982
- 1982-01-07 JP JP61582A patent/JPS58118111A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391664A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Plasma cvd device |
| JPS56121631A (en) * | 1980-02-29 | 1981-09-24 | Canon Inc | Film forming device |
| JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58118111A (en) | 1983-07-14 |
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