JPH06326080A - Plasma cvd device - Google Patents

Abstract

PURPOSE:To mass-produce an electrophotography photosensitive body with a uniform amorphous photosensitive layer by providing a deposited film support retention device which can rotate and revolve and is grounded between a heating means and a cylindrical electrode and then introducing gas into the space in a vacuum. CONSTITUTION:An inside heating means consisting of a heater 10 and a shield 2 and a cylindrical electrode 3 enclosing it are laid out inside a reaction container 1. A plurality of deposition covering supports 4 are retained by a support retention means 5 between the shield 2 and the cylindrical electrode 3 and are placed so that they can rotate and revolve by a motor 6. A raw gas is emitted to the cylindrical electrode 3 and an outside heating means consisting of a heater 11 and a shield 9 is laid out in proximity and then is connected to a high-frequency power supply 8. On the other hand, the inside shield 2, the deposition covering support 4, the outside shield 9 are grounded and the inside of the reaction container 1 is changed into a vacuum state by an evacuation system 12, thus forming a film on a plurality of deposition covering supports of a small diameter with one operation.

Description

Detailed Description of the Invention

[0001]

This invention relates to an improved plasma C
It relates to a VD device.

[0002]

2. Description of the Related Art Conventionally, in the manufacture of an amorphous silicon photoconductor as an electrophotographic photoconductor, a rotatable photoconductor drum holding member and a cylindrical electrode provided around it are installed in a vacuum chamber. Using a plasma CVD device, a reaction gas is introduced from a reaction gas inlet provided on one side surface of the electrode to generate glow discharge and decompose the reaction gas into a paper and a conductive member held on the photosensitive drum holding member. It is carried out by forming an amorphous silicon photosensitive layer on the surface of the permeable support.

FIG. 4 shows a conventional capacitively coupled plasma CVD.
An example of an apparatus is shown. Reference numeral 21 denotes a closed reaction tank, in which a cylindrical conductive substrate 2 rotated by a motor 28 is used.
2 is placed as an electrode, while a hollow counter electrode 23 made of a rigid metal and provided with a plurality of gas ejection holes 26 is installed so as to face the conductive substrate 22 and surround it. The outside is covered with a shield plate 27 made of metal. The raw material gas is decomposed into the raw material gas by causing a glow discharge between the conductive base (electrode) 22 and the electrode 23 in the reaction tank 21 through the gas introduction pipe 25 from the cylinder 24 to decompose the raw material gas, and then the raw material gas is placed on the conductive base 22. Allow the film to form in volume. 29 is a high frequency power supply, and 30 is an exhaust system.

Since this plasma CVD apparatus produces one amorphous silicon photoconductor in one operation,
There is a problem in terms of mass production. So, for the purpose of mass production recently,
Various proposals have been made. For example, it is known that a plurality of photosensitive drum holding members are arranged in a vacuum chamber (Japanese Patent Laid-Open Nos. 57-185971 and 61-5794).
No. 6, etc.). Further, it is known that a plurality of cylindrical deposition film supports are installed between double cylindrical electrodes and a high frequency voltage is applied to each cylindrical electrode (Japanese Patent Laid-Open No. 62-62-62).
4872).

[0005]

The conventional technique proposed for the purpose of mass production has various problems. For example, as described in Japanese Patent Application Laid-Open No. 58-71369, in the case where a plurality of vapor deposition devices are provided, it is necessary to provide a high frequency power source and a matching box for impedance matching in each vapor deposition device, and each vapor deposition device is provided. Since it is necessary to control each of them separately, there is a problem that the equipment becomes complicated and time-consuming. Further, in the case where a plurality of photosensitive drum holding members are installed in one cylindrical electrode, since the vapor deposition conditions change between the reaction gas introduction port and the discharge port, they are held on each dry solid drum holding member. There is a problem that the photosensitive layer formed on the formed conductive substrate is not uniform.

[0006] Further, it has been proposed for the purpose of preventing it,
In the device that rotates the photoreceptor drum holder at the same time as it revolves, the above problem is somewhat improved, but the drive device for rotating becomes complicated and a new problem that heating from the inside of the base cannot be generated occurs. did. Further, in a device that allows the reaction gas to uniformly flow on each photosensitive drum, there is a problem that the mechanism for introducing and discharging the reaction gas becomes complicated, and in any case, it is sufficiently satisfactory. No results were obtained. Also,
In a plasma CVD apparatus, in the case of a mechanism having a heater inside the deposited film support, it is difficult to deposit many deposited film supports at the same time, and it is also possible to deposit on a rod-shaped deposited film support having a small diameter. Doing is also a problem.

In the apparatus disclosed in Japanese Patent Laid-Open No. 62-4872, in which a plurality of cylindrical deposition coatings are provided between the double cylindrical electrodes, the cylindrical electrode and the cylindrical deposition coating support are provided between the tubular electrodes. Since a high-frequency voltage is applied to the electrodes, the sense of the electrode and the deposited film support is close, discharge occurs only in a narrow area, the film formation rate is low, and the film thickness distribution becomes poor. is there. The present invention has been made in view of the above problems in the prior art, and enables mass production of an electrophotographic photoreceptor having a uniform amorphous photosensitive layer such as an amorphous silicon photosensitive layer. , Simple structure plasma CVD
The purpose is to provide a device.

[0008]

In order to achieve the above object, the inventors of the present invention have conducted extensive studies, and as a result, enclose the heating means provided in a reaction container that can be discarded in a vacuum and the heating means in an external package. And a means for applying a voltage to the cylindrical electrode, and a means for introducing a gas into the space between the heating means and the cylindrical electrode, the heating means and the cylindrical electrode. A holding device for holding a plurality of deposited film supports is disposed between the two and in a grounded state, and the above-mentioned holding knowledge employs a mechanism for rotating and revolving the deposited film supports.

In the present invention, the heating means (inner heating means when there is the following outside heating means) may be cylindrical. Further, the cylindrical electrode may be provided with a heating means (outside heating means). The gas introducing means may be provided in the heating means (inner heating means), in the cylindrical electrode, or in both. The power source for generating plasma discharge may be DC, AC, high frequency, or microwave, but high frequency is preferable because of excellent discharge uniformity.

The voltage applied in the device of the present invention is preferably a high frequency voltage, and it is preferable to have a grounded shield provided outside the electrode and a means for heating this shield. In addition, it is preferable that a plurality of rod-shaped or cylindrical objects are arranged as the deposition film supporting resistance, and a plurality of these may be simultaneously provided in each deposition film support holding means.

[0011]

The structure and operation of the present invention will be described. INDUSTRIAL APPLICABILITY The plasma CVD apparatus of the present invention can be applied to the production of an electrophotographic photosensitive member having a uniform amorphous photosensitive layer such as an amorphous silicon photosensitive member, and comprises a heating means in a reaction container and a cylindrical electrode. The rod-shaped or cylindrical deposition film support is placed on the holding means between the two in a grounded state. With the pressure inside the reaction vessel reduced, for example, a high-frequency voltage is applied between the deposited film support and the cylindrical electrode, and the source gas is introduced from the heating means and / or the gas introduction means provided in the cylindrical electrode. To do. in this case,
The deposition film support is heated by a cylindrical electrode heated via a heating means and / or a shield, and the introduced gas is decomposed by glow discharge in a space around the cylindrical electrode and the deposition film support to form a deposition film. An amorphous silicon photosensitive layer film is formed on the support. Therefore, the plasma CVD apparatus of the present invention has a simple structure and can reduce the generation of powdery substances for a small-diameter rod-shaped or cylindrical deposition film support, and can produce a high-quality film in large quantities. It will be possible.

[0012]

EXAMPLES The present invention will be specifically described with reference to Examples.
The present invention is not limited thereby. Less than,
Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of an embodiment of the plasma CVD apparatus of the present invention.
FIG. 2 is a vertical sectional view thereof. In the figure, 1 is the outer wall of the reaction vessel, inside which the heater 10 and the shield 2
Inner heating means consisting of, and cylindrical electrode 3 enclosing it
Is provided. Shield 2 constituting the inner heating means
A plurality of deposited film supports 4 are provided between the cylindrical electrode 3 and the cylindrical electrode 3.
Is held by the support holding means 5, and is placed by the motor 6 so as to be able to rotate and revolve. The cylindrical electrode 3 is provided with a source gas supply port 7 for source gas, for example, silane (SiH ₄ ) gas, so that the source gas is ejected from a large number of holes 91 provided on the inner surface of the electrode. Has become. An outer heating means including a heater 11 and a shield 9 is provided close to the cylindrical electrode 3, and is connected to a high frequency power source 8 so that a high frequency voltage can be applied. On the other hand, the inner shield 2, the deposited film support 4 and the outer shield 9 are grounded. In addition, the reaction vessel has an exhaust system 1 so that the inside becomes a vacuum.
It can be exhausted by 2. In addition, 13 is a cylinder for supplying the raw material gas. In FIG. 2, a plurality of deposition film supports 4 are placed on each support holding means 5, and each deposition film support is held so that it can rotate and revolve.

A case of forming a photosensitive layer film on a deposition film support by using the plasma CVD apparatus of the present invention having the above structure will be described. First, the space of the reaction vessel 1 in which the cylindrical or rod-shaped deposition film support 4 is arranged,
Evacuate to a high vacuum of 10 ⁻⁴ to 10 ⁻⁶ Torr. Next, the heater 10 is set to 150 to 300 ° C., and the heater 11 is set to 20.
It is heated to 0 to 300 ° C., and a high frequency power source 8 applies a high frequency voltage to the cylindrical electrode 3. At that time, grounding the shield 9 prevents noise emission to the outside of the reaction vessel and deviation of the control system. The cylindrical or rod-shaped deposition film support 4 is held in a grounded state. Cylinder 13
A raw material gas from, for example, silane (SiH ₄ ) gas is introduced from the raw material gas supply port 7 between the cylindrical electrode and the shield 9. The raw material gas is ejected from a large number of holes 91 provided on the inner surface of the cylindrical electrode 3, and the cylindrical electrode 3 and the deposited film support 4
It is decomposed by the glow discharge generated in the space between and forms a film on the deposited film support 4.

In FIG. 3, the source gas supply port 7 is installed close to the inner heating means. In this case, since a high frequency shield is not necessary, the device becomes simpler than the case where the source gas supply port is installed in the cylindrical electrode. The gas is discharged from the discharge system 12 provided on the cylindrical electrode 3.

Using the plasma CVD apparatus of the present invention configured as described above, a negatively charged photoreceptor comprising a blocking layer, an a-Si photoconductive layer, and a surface layer was formed on the deposited film support. . That is, 16 cylindrical deposition film supports that had been washed with a chlorofluorocarbon solvent were subjected to high frequency (13.
(56 MHz) After being set in the vacuum reaction tank of the plasma CVD apparatus, it was evacuated to a vacuum. Then, N ₂ is supplied at a gas flow rate of 10
It is introduced at a speed of 0 cm ³ / min and the heater 10 is set to 20
The heater 11 was heated to 0 ° C. to 250 ° C., and the surface of the cylindrical deposition film support was controlled to 250 ° C. At this time, the vacuum reaction tank is maintained at 0.5 Torr. Subsequently, the vacuum reaction tank was evacuated to 10 ^{−6, and} then a first blocking layer was formed. SiH ₄ 150sccm, NH ₃ 15
0 sccm was introduced and the pressure was maintained at 0.5 Torr. This pressure was kept constant thereafter. The high frequency power was 300 W and the film formation time was 10 min. To form the photoconductive layer, SiH ₄ 300sccm, B ₂ H ₆ 3sc
cm was introduced. The high frequency power was 500 W and the film formation time was 360 min. To form the surface layer, use SiH
_{4 50sccm,} was performed by introducing the NH ₃ 250sccm. The high frequency power was 300 W and the film formation time was 10 min. Regarding the film thickness of each layer, the blocking layer was 0.5 μm, the photoconductive layer was 20 μm, and the surface layer was 0.3 μm. The 16 small-diameter a-Si photoconductors produced in this manner showed almost no variation in electrical characteristics, image characteristics, etc., and showed good characteristics.

[0016]

EFFECTS OF THE INVENTION Since the present invention is configured as described above, it is possible to form a film on a plurality of small-diameter deposition film supports by a single operation, and it is unnecessary to use powder or the like. Such a reaction product hardly adheres to the outer wall of the reaction container and the like, and a film of good quality can be obtained, which is extremely useful in industry.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of an embodiment of a plasma CVD apparatus of the present invention.

FIG. 2 is a vertical sectional view of the plasma CVD apparatus in FIG.

FIG. 3 is a transverse sectional view of another embodiment of the plasma CVD apparatus of the present invention.

FIG. 4 is a schematic configuration diagram of a conventional capacitively coupled plasma CVD apparatus.

[Explanation of symbols]

1 ... Reaction container, 2, 9 ... Shield, 3 ... Cylindrical electrode, 4
... Deposition coating support, 5 ... Support holding means, 6 ... Motor, 7 ... Raw material gas supply port, 8 ... High frequency power supply, 10, 11
... heater, 12 ... exhaust system, 13 ... cylinder.

[Procedure amendment]

[Submission date] May 24, 1994

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] Full text

[Correction method] Change

[Correction content]

[Document name] Statement

Title: Plasma CVD apparatus

[Claims]

Detailed Description of the Invention

[0001]

This invention relates to an improved plasma C
It relates to a VD device.

[0002]

2. Description of the Related Art Conventionally, in the manufacture of an amorphous silicon photoconductor as an electrophotographic photoconductor, a rotatable photoconductor drum holding member and a cylindrical electrode provided around it are installed in a vacuum chamber. Using a plasma CVD device, a reaction gas is introduced from a reaction gas inlet provided on one side surface of the electrode to generate glow discharge, decompose the reaction gas, and conduct the conductive material held on the photosensitive drum holding member. It is carried out by forming an amorphous silicon photosensitive layer on the surface of the permeable support.

FIG. 4 shows a conventional capacitively coupled plasma CVD.
An example of an apparatus is shown. Reference numeral 21 denotes a closed reaction tank, in which a cylindrical conductive substrate 2 rotated by a motor 28 is used.
2 is placed as an electrode, while a hollow counter electrode 23 made of a rigid metal and provided with a plurality of gas ejection holes 26 is installed so as to face the conductive substrate 22 and surround it. The outside is covered with a shield plate 27 made of metal. The raw material gas is introduced into the reaction tank 21 from the cylinder 24 through the gas introduction pipe 25, and glow discharge is caused between the conductive substrate (electrode) 22 and the electrode 23 to decompose the raw material gas, and the raw material gas is discharged onto the conductive substrate 22. Deposit the film. 29 is a high frequency power supply, and 30 is an exhaust system.

Since this plasma CVD apparatus produces one amorphous silicon photoconductor in one operation,
There is a problem in terms of mass production. So, for the purpose of mass production recently,
Various proposals have been made. For example, it is known that a plurality of photosensitive drum holding members are arranged in a vacuum chamber (Japanese Patent Laid-Open Nos. 57-185971 and 61-5794).
No. 6, etc.). Further, it is known that a plurality of cylindrical deposition film supports are installed between double cylindrical electrodes and a high frequency voltage is applied to each cylindrical electrode (Japanese Patent Laid-Open No. 62-62-62).
4872).

[0005]

The conventional technique proposed for the purpose of mass production has various problems. For example, as described in Japanese Patent Application Laid-Open No. 58-71369, in the case where a plurality of vapor deposition devices are provided, it is necessary to provide a high frequency power source and a matching box for impedance matching in each vapor deposition device, and each vapor deposition device is provided. Since it is necessary to control each of them separately, there is a problem that the equipment becomes complicated and time-consuming. Further, in the case where a plurality of photosensitive drum holding members are installed in one cylindrical electrode, since the vapor deposition conditions are changed between the reaction gas introduction port and the discharge port, they are held on each photosensitive drum holding member. There is a problem that the photosensitive layer formed on the formed conductive substrate is not uniform.

[0006] Further, it has been proposed for the purpose of preventing it,
In the device that rotates the photoreceptor drum holder at the same time as it revolves, the above problem is somewhat improved, but the drive device for rotating becomes complicated and a new problem that heating from the inside of the base cannot be generated occurs. did. Further, in a device that allows the reaction gas to uniformly flow on each photosensitive drum, there is a problem that the mechanism for introducing and discharging the reaction gas becomes complicated, and in any case, it is sufficiently satisfactory. No results were obtained. Also,
In a plasma CVD apparatus, in the case of a mechanism having a heater inside the deposited film support, it is difficult to deposit many deposited film supports at the same time, and it is also possible to deposit on a rod-shaped deposited film support having a small diameter. It is also difficult to do.

In the apparatus disclosed in Japanese Patent Application Laid-Open No. 62-4872, in which a plurality of cylindrical deposition coating supports are installed between the double cylindrical electrodes, the space between the tubular electrodes and the cylindrical deposition coating support is increased. Since a high-frequency voltage is applied to the electrode, the distance between the electrode and the deposition film support is close, and discharge occurs only in a narrow area, resulting in a low film formation rate and poor film thickness distribution. is there. The present invention has been made in view of the above problems in the prior art, and enables mass production of an electrophotographic photoreceptor having a uniform amorphous photosensitive layer such as an amorphous silicon photosensitive layer. , Simple structure plasma CVD
The purpose is to provide a device.

[0008]

In order to achieve the above object, the inventors of the present invention have conducted extensive studies, and as a result, enclose the heating means provided in a reaction vessel capable of being evacuated to a vacuum, and the heating means in an external package. And a means for applying a voltage to the cylindrical electrode, and a means for introducing a gas into the space between the heating means and the cylindrical electrode, the heating means and the cylindrical electrode. A holding device for holding a plurality of deposited film supports is disposed in a grounded state between the two, and the holding device employs a mechanism for rotating and revolving the deposited film supports.

In the present invention, the heating means (inner heating means when there is the following outside heating means) may be cylindrical. Further, the cylindrical electrode may be provided with a heating means (outside heating means). The gas introducing means may be provided in the heating means (inner heating means), in the cylindrical electrode, or in both. The power source for generating plasma discharge may be DC, AC, high frequency, or microwave, but high frequency is preferable because of excellent discharge uniformity.

The voltage applied in the device of the present invention is preferably a high frequency voltage, and it is preferable to have a grounded shield provided outside the electrode and a means for heating this shield. Further, it is preferable that a plurality of rod-shaped or cylindrical members are provided as the deposition film support, and a plurality of them may be simultaneously arranged in each support holding means.

[0011]

The structure and operation of the present invention will be described. INDUSTRIAL APPLICABILITY The plasma CVD apparatus of the present invention can be applied to the production of an electrophotographic photoreceptor having a uniform amorphous photosensitive layer such as an amorphous silicon photosensitive layer, and comprises a heating means in a reaction container, a cylindrical electrode, and The rod-shaped or cylindrical deposition film support is placed on the holding means between the two in a grounded state. With the pressure inside the reaction vessel reduced, for example, a high-frequency voltage is applied between the deposited film support and the cylindrical electrode, and the source gas is introduced from the heating means and / or the gas introduction means provided in the cylindrical electrode. To do. in this case,
The deposition film support is heated by a cylindrical electrode heated via a heating means and / or a shield, and the introduced gas is decomposed by glow discharge in a space around the cylindrical electrode and the deposition film support to form a deposition film. An amorphous silicon photosensitive layer film is formed on the support. Therefore, the plasma CVD apparatus of the present invention has a simple structure and can reduce the generation of powdery substances for a small-diameter rod-shaped or cylindrical deposition film support, and can produce a high-quality film in large quantities. It will be possible.

[0012]

EXAMPLES The present invention will be specifically described with reference to Examples.
The present invention is not limited thereby. Less than,
Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of an embodiment of the plasma CVD apparatus of the present invention.
FIG. 2 is a vertical sectional view thereof. In the figure, reference numeral 1 is a reaction vessel, inside which an inner heating means consisting of a heater 10 and a shield 2 and a cylindrical electrode 3 which encloses it are arranged. Between the shield 2 and the cylindrical electrode 3 which constitute the inner heating means, a plurality of deposition film supports 4 are held by a support holding means 5 and placed by a motor 6 so that they can rotate and revolve. . In the cylindrical electrode 3,
A raw material gas, for example, a raw material gas supply port 7 for silane (SiH ₄ ) gas is provided, and the raw material gas is ejected from a large number of holes 91 provided on the inner surface of the electrode. Further, an outer heating means composed of a heater 11 and a shield 9 is provided close to the cylindrical electrode 3,
Then, it is connected to the high frequency power source 8 so that a high frequency voltage can be applied. On the other hand, the inner shield 2, the deposited film support 4 and the outer shield 9 are grounded.
Further, the reaction container can be evacuated by the evacuation system 12 so that the inside becomes a vacuum. In addition, 13 is a cylinder for supplying the raw material gas. In FIG. 2, a plurality of deposition film supports 4 are placed on each support holding means 5, and each deposition film support is held so that it can rotate and revolve.

A case of forming a photosensitive layer film on a deposition film support by using the plasma CVD apparatus of the present invention having the above structure will be described. First, the space of the reaction vessel 1 in which the cylindrical or rod-shaped deposition film support 4 is arranged,
Evacuate to a high vacuum of 10 ⁻⁴ to 10 ⁻⁶ Torr. Next, the heater 10 is set to 150 to 300 ° C., and the heater 11 is set to 20.
It is heated to 0 to 300 ° C., and a high frequency power source 8 applies a high frequency voltage to the cylindrical electrode 3. At that time, grounding the shield 9 prevents noise from being emitted to the outside of the reaction vessel and the control system from being disturbed. The cylindrical or rod-shaped deposition film support 4 is held in a grounded state. A raw material gas from the cylinder 13 such as silane (SiH ₄ ) gas is introduced from the raw material gas supply port 7 between the cylindrical electrode and the shield 9. The raw material gas is ejected from a large number of holes 91 provided on the inner surface of the cylindrical electrode 3, decomposed by glow discharge generated in the space between the cylindrical electrode 3 and the deposition film support 4, and is deposited on the deposition film support 4. Form a film.

In FIG. 3, the source gas supply port 7 is installed close to the inner heating means. In this case, since a high frequency shield is not necessary, the device becomes simpler than the case where the source gas supply port is installed in the cylindrical electrode. The gas is discharged from the discharge system 12 provided on the cylindrical electrode 3.

Using the plasma CVD apparatus of the present invention configured as described above, a negatively charged photoreceptor comprising a blocking layer, an a-Si photoconductive layer, and a surface layer was formed on the deposited film support. . That is, 16 cylindrical deposition film supports that had been washed with a chlorofluorocarbon solvent were subjected to high frequency (13.
(56 MHz) After being set in the vacuum reaction tank of the plasma CVD apparatus, it was evacuated to a vacuum. Then, N ₂ is supplied at a gas flow rate of 10
It is introduced at a speed of 0 cm ³ / min and the heater 10 is set to 20
The heater 11 was heated to 0 ° C. to 250 ° C., and the surface of the cylindrical deposition film support was controlled to 250 ° C. At this time, the vacuum reaction tank is maintained at 0.5 Torr. Subsequently, the vacuum reaction tank was evacuated to 10 ^{−6, and} then a first blocking layer was formed. SiH ₄ 150sccm, NH ₃ 15
0 sccm was introduced and the pressure was maintained at 0.5 Torr. This pressure was kept constant thereafter. The high frequency power was 300 W and the film formation time was 10 min. To form the photoconductive layer, SiH ₄ 300sccm, B ₂ H ₆ 3sc
cm was introduced. The high frequency power was 500 W and the film formation time was 360 min. To form the surface layer, use SiH
_{4 50sccm,} was performed by introducing the NH ₃ 250sccm. The high frequency power was 300 W and the film formation time was 10 min. Regarding the film thickness of each layer, the blocking layer was 0.5 μm, the photoconductive layer was 20 μm, and the surface layer was 0.3 μm. The 16 small-diameter a-Si photoconductors produced in this manner showed almost no variation in electrical characteristics, image characteristics, etc., and showed good characteristics.

[0016]

EFFECTS OF THE INVENTION Since the present invention is constructed as described above, it is possible to form a film on a plurality of small-diameter deposition film supports in a single operation, and to prevent the formation of powders or the like. The necessary reaction product hardly adheres to the outer wall of the reaction vessel and the like, and a good quality membrane can be obtained, which is extremely useful in industry.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of an embodiment of a plasma CVD apparatus of the present invention.

FIG. 2 is a vertical sectional view of the plasma CVD apparatus in FIG.

FIG. 3 is a transverse sectional view of another embodiment of the plasma CVD apparatus of the present invention.

FIG. 4 is a schematic configuration diagram of a conventional capacitively coupled plasma CVD apparatus.

[Explanation of reference numerals] 1 ... Reaction vessel, 2, 9 ... Shield, 3 ... Cylindrical electrode, 4
... Deposition coating support, 5 ... Support holding means, 6 ... Motor, 7 ... Raw material gas supply port, 8 ... High frequency power supply, 10, 11
... heater, 12 ... exhaust system, 13 ... cylinder.

Claims (7)

[Claims] 1. A heating means provided in a reaction container capable of being evacuated to a vacuum, a cylindrical electrode provided so as to enclose the heating means, and a means for applying a voltage to the cylindrical electrode,
A holding device having a means for introducing a gas into the space between the heating means and the cylindrical electrode and holding a plurality of deposited film supports between the heating means and the cylindrical electrode is arranged in a grounded state. A plasma CVD apparatus, which is provided and is provided with a mechanism for rotating and revolving the deposited film support. 2. The plasma CVD apparatus according to claim 1, wherein the cylindrical electrode is provided with a heating means. 3. The inner heating means is cylindrical.
Alternatively, the plasma CVD device according to the item 2. 4. The plasma CVD apparatus according to claim 1, 2 or 3, wherein a plurality of gas inlets are provided in the cylindrical electrode. 5. The plasma CVD apparatus according to claim 1, wherein the gas introducing means is provided in the inner heating means. 6. The plasma CVD apparatus according to claim 1, wherein the voltage applied to the electrodes has a high frequency. 7. The plasma CVD apparatus according to any one of claims 1 to 6, wherein a plurality of deposition film supports are simultaneously supported by each deposition film support holding means.