JP3135031B2 - Deposition film forming equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystalline or non-monocrystalline functional deposited film useful for an electrophotographic photosensitive member device as a semiconductor device, an image input line sensor, an imaging device, a photovoltaic device and the like. And a plasma processing apparatus such as a semiconductor device or an insulating film as an optical element, a sputtering apparatus capable of suitably forming a metal wiring, or an etching apparatus such as a semiconductor device. In particular, a plasma processing apparatus for processing a substrate using plasma as an excitation source, and particularly a plasma processing apparatus of 20 MHz or more or 50 MHz or more,
The present invention relates to a plasma processing apparatus that can suitably use high-frequency power of 50 MHz or less.

[0002]

2. Description of the Related Art There are various methods for a plasma processing apparatus used in the manufacture of semiconductors or the like according to each application. For example, an amorphous silicon-based semiconductor film, an oxide film, a nitride film, or the like is formed using a plasma CVD apparatus or a plasma CVD method, a metal wiring film is formed using a sputtering apparatus or a sputtering method, and an etching apparatus or an etching method is used. Apparatuses and methods that make use of various characteristics, such as film formation by the fine processing technology used, are used.

Further, in recent years, there has been a strong demand for improvement in film quality and processing ability, and various devices have been studied.

In particular, a plasma process using high-frequency power is used for various advantages, such as high discharge stability and can be used for forming an insulating material such as an oxide film and a nitride film.

Conventionally, an oscillation frequency of a high frequency power supply for discharge used in a plasma process such as a plasma CVD method is generally 13.56 MHz. FIG. 6 shows an example of a plasma CVD apparatus generally used for forming the conventional deposited film. The plasma CVD apparatus shown in FIG. 6 is a film forming apparatus suitable for forming an amorphous silicon film (hereinafter referred to as [a-Si film]) on a cylindrical electrophotographic photosensitive member substrate. Hereinafter, a method for forming an a-Si film using this apparatus will be described.

In FIG. 6, a cylindrical substrate 6 as a cathode electrode 601 and a counter electrode is placed in a deposition chamber 600 capable of reducing pressure.
02 is arranged. An auxiliary substrate 603 is attached to the cylindrical substrate 602, and forms a part of an electrode. The cylindrical substrate 602 has an internal substrate heater 604.
Is heated from the inside. The high frequency power supply 610 is connected to the cathode electrode 601 via the matching circuit 609 at one location. 611 is an exhaust port, and 607 is a source gas inlet.

[0007] A cylindrical substrate 602 is set in the deposition chamber 600, and the deposition chamber 6 is exhausted by an exhaust device (not shown) through an exhaust port 611.
00 is once evacuated. Thereafter, a raw material gas inlet (not shown) is opened, an inert gas is introduced, and the flow rate and the exhaust speed are adjusted to a predetermined pressure. The central shaft 605 is rotationally driven by the drive motor 608, and while rotating the cylindrical base 602 in the circumferential direction, power is supplied to the base heating heater 604 to heat the cylindrical base to a desired temperature of 100 to 400 ° C.

Thereafter, a source gas for film formation, for example, a source gas such as silane gas, disilane gas, methane gas, and ethane gas, and a doping gas such as diborane gas and phosphine gas are supplied to the source gas (not shown) through a source gas inlet 607. Introduced after mixing with the mixing panel of
The pumping speed is adjusted so as to maintain the pressure at several hundred mTorr to several Torr.

A high-frequency power of 13.56 MHz from a high-frequency power supply 610 is supplied to one portion of a cathode electrode 601 insulated from a ceiling plate, a bottom plate and the like of the deposition chamber 600 via a matching circuit 609 so that the high-frequency power is supplied to the cylindrical substrate 602. An a-Si film is deposited on the cylindrical substrate 602 by generating a plasma discharge in between to decompose the raw material gas. During this time, the cylindrical substrate 602 is heated to 100 to 400 by the substrate heater 604.
C., and the cylindrical substrate 602 is also rotating in the circumferential direction.

In the above procedure, a cylindrical substrate 602 for a copying machine is used.
In the case of depositing an a-Si film on the substrate, it is desirable to form the film while rotating it in the circumferential direction of the cylindrical substrate 602 in order to improve the uniformity in the circumferential direction even in the coaxial film forming apparatus shown in FIG. . Further, in a device as shown in FIG. 7 in which a plurality of cylindrical substrates are arranged concentrically and an electrode is installed inside these cylindrical substrates to generate electric discharge, the entire circumference of the cylindrical substrate 702 is provided. Rotation is essential to deposit the film.

In FIG. 7, in a deposition chamber 700,
High-frequency power is supplied from a high-frequency power supply 710, and the cathode electrode 70 is supplied through a matching box 709 for matching.
1 is excited. The center shaft 705 is driven by the drive motor 708.
Is driven to rotate, and the heater 704 on its outer periphery and the cylindrical base 702 heated by the heater 704 for non-heating rotate in synchronization with the rotation of its central shaft 705. The auxiliary base 703 is for supporting the cylindrical base 702. The source gas is the source gas inlet 70
7, the pressure inside the deposition chamber 700 is reduced to a desired pressure from the exhaust port 711, and a glow discharge region is generated in a space 713 between the cathode electrode 701 and the plurality of cylindrical substrates 702, and the source gas is excited. Thus, a desired film is formed on the cylindrical substrate 702 according to the components of the source gas.

At the time of film formation on the cylindrical substrate shown in FIGS. 6 and 7, even in a general plasma CVD apparatus, it is necessary to maintain the substrate temperature during film formation at 100 to 400.degree. A heater for heating is essential. The capacity of this heater is as large as 0.5 to 5 kW due to the necessity of heating the cylindrical substrate in a vacuum where heat is not easily transmitted, and it is difficult and difficult to supply power inside the rotating shaft that rotates the cylindrical substrate. It is. For this reason, the heater for heating the substrate is generally fixed in the deposition chamber in order to simplify the structure of the apparatus, reduce the cost, and facilitate maintenance. For this reason, the rotating shaft is provided so as to pass through the inside of the heater for heating the substrate, and the upper portion of the cylindrical substrate is supported by the rotating shaft, thereby enabling heating and rotation of the cylindrical substrate.

In this film forming method, the deposition rate for obtaining an a-Si film satisfying the performance of the electrophotographic photosensitive member is, for example, about 0.5 to 6 μm per hour, and more than that. If the deposition rate is increased, the characteristics of the photoconductor may not be obtained. In general, when an a-Si film is used as an electrophotographic photoreceptor, a film thickness of at least 20 to 30 μm is required in order to obtain a charging ability, and it takes a long time to manufacture an electrophotographic photoreceptor. I needed it.
For this reason, there has been a strong demand for a technique for shortening the manufacturing time without deteriorating the characteristics as a photoreceptor.

Recently, a parallel plate type plasma CV has been developed.
There is a report on a plasma CVD method using a D apparatus and a high frequency power supply of 20 MHz or more (Plasma Chemi).
STRY AND PLASMA PROCESSIN
g, vol. 7, No. 3, (1987) p267-2
73) By setting the discharge frequency higher than the conventional 13.56 MHz, there is a possibility that the deposition rate can be improved without deteriorating the performance of the deposited film. In addition, reports of increasing the discharge frequency have also been made by sputtering or the like, and their superiority has been widely studied in recent years.

In order to improve the deposition rate, the discharge frequency was changed to a high frequency power higher than the conventional 13.56 MHz, and the film was formed by the same method as the conventional method. It was confirmed that it could be created at speed.

[0016]

However, it has been found that, in the above-mentioned conventional example, the following problem, which did not become a problem at the discharge frequency of 13.56 MHz, may newly occur.

A substrate heater is fixed in the deposition chamber,
In the case of a configuration in which the rotation shaft passes through the inside, the cylindrical base is connected to the ground from one point by contacting the rotation shaft. When film formation is performed using high frequency power of a high frequency of 20 MHz to 450 MHz in this configuration, 1
At a frequency as low as 3.56 MHz, the problem that a film thickness distribution which is not a problem occurs occurs. In other words, the film thickness on the grounded side becomes thicker,
This is the phenomenon of thinning on the other side.

This also changes the film quality of the deposited film in the longitudinal direction.
The adverse effects such as uneven sensitivity and image roughness are likely to occur.

Further, if the side opposite to the side grounded by the rotating shaft is forcibly grounded by rubbing, for example, an earth electrode, the dust generated due to the rubbing of the metals will be caused. For example, in the case of an electrophotographic photoreceptor, image defects are greatly deteriorated and cannot be put to practical use.

As described above, in film formation using high-frequency power of a high frequency of 20 MHz or more, it is difficult to ground the cylindrical substrate from above and below, so that the film thickness unevenness and film quality in the axial direction of the cylindrical substrate are increased. Unevenness occurs. For example, when applied to an electrophotographic photoreceptor, image unevenness such as density unevenness, sensitivity unevenness, and roughness may occur, and further, image defects may worsen.

Such unevenness in the deposition rate and film characteristics is caused not only in the electrophotographic photosensitive member but also in the image input line sensor,
Crystalline, useful for imaging devices, photovoltaic devices, etc.
Also, a large problem occurs when an amorphous functional deposition film is formed. Also, in other plasma processes such as dry etching and sputtering, when the discharge frequency is increased, the same processing unevenness occurs, and this causes a serious problem in practical use.

An object of the first invention relating to the present invention is 20M
It is an object of the present invention to provide a deposition film generation apparatus capable of reducing film thickness unevenness in an axial direction without increasing image defects in film formation at a high frequency of Hz to 450 MHz.

An object of the second invention according to the present invention is that 20M
It is an object of the present invention to provide a deposition film forming apparatus which can manufacture an electrophotographic photoreceptor free from unevenness in density, unevenness in sensitivity, and image irregularity in film formation at a high frequency of Hz to 450 MHz.

A third object of the present invention is to provide a deposition film forming apparatus capable of uniformly processing a relatively large area substrate at a higher processing speed than a conventional plasma process. is there.

A fourth object of the present invention is to provide an apparatus for forming a deposited film capable of manufacturing an electrophotographic photosensitive member with a short manufacturing time and low cost.

The fifth object of the present invention is to provide a fifth object.
It is an object of the present invention to provide a deposited film forming apparatus that improves the film forming speed and prevents the occurrence of image unevenness by forming a film at a high frequency of MHz to 450 MHz.

[0027]

According to a first aspect of the present invention, there is provided a deposited film forming apparatus comprising: a substrate heating heater fixed in a vacuum-tight deposition chamber provided with an exhaust unit and a source gas supply unit;
To enclose the substrate heater, a cylindrical substrate serving also as one of the discharge electrodes, a cylindrical substrate or a cylindrical substrate having an auxiliary substrate attached thereto is rotatably installed, and a frequency of 20 MHz is set between the other separately provided electrodes. A glow discharge is generated by applying a high-frequency power of 450 MHz, and a solid film containing silicon is deposited on a substrate from a source gas introduced into the deposition chamber by the glow discharge to form a film by a plasma CVD method. In the apparatus, one end of the cylindrical base in the generatrix direction is grounded by a rotating shaft for rotating the cylindrical base, and the other end is provided with a means for grounding in a non-contact manner, and is grounded in a non-contact manner. Means for forming a capacitor between the cylindrical substrate or the auxiliary substrate on which the cylindrical substrate is mounted and an earth electrode which is placed adjacent to the cylindrical substrate without contacting the cylindrical substrate or the auxiliary substrate; The capacitor has a function of connecting to the ground via a capacitor. At this time, when the capacitance C (farad) of the capacitor is f (hertz) for the frequency of the high-frequency power and L (henry) for the inductance of the rotating shaft, 0.1 (4π ² f ² L) ⁻¹ ≦ C ≦ 10 (4π ² f ²
L) ^-1 is satisfied.

Conventionally, a method of grounding a long base such as a cylindrical base for a copying machine from one place is known.
There was no problem when forming a film at a low frequency such as 3.56 MHz. However, 20 MHz to 450
When film formation is performed using power of a high frequency of MHz, the influence of the impedance of the substrate itself cannot be ignored. For this reason, in the longitudinal direction of the base, there is a problem that the plasma state is different between the side where the ground is taken and the side where the ground is not taken, and a film thickness distribution is generated.
In other words, on the grounded side, the impedance to the ground is low, so the plasma density increases, the deposition rate increases, and the film thickness increases. On the other side, a certain self-bias occurs due to the impedance of the cylindrical body itself. As a result, the plasma density decreases and the film thickness decreases. Furthermore, plasma density,
Naturally, the deposition rate changes, and the density of the electrophotographic photosensitive member becomes uneven, the image becomes rough, and the sensitivity becomes uneven.

As the most fundamental solution to this problem, the inventors of the present invention prepare for the generation of dust by rubbing the cylindrical base opposite to the side supported by the rotating shaft with a grounded brush-like electrode. An experiment was conducted to make the state of the earth of the cylindrical substrate seemingly symmetric. However, surprisingly, in this experiment, conversely, the side grounded by the rotating shaft was thinner and the brush-like electrode side was thicker. The reason for this is that the side of the rotating shaft that is grounded is certainly grounded, but when viewed in terms of high frequency, it is grounded through the long path of the rotating shaft, so the impedance of this path is better. It is considered that the impedance becomes much larger than the impedance on the side grounded via the brush-like electrode, and a film thickness distribution occurs. Therefore, it has been found that the method of rubbing with a grounded brush-like electrode on the side opposite to the side supported by the rotating shaft is not effective not only in the generation of dust but also in the sense of reducing the film thickness distribution.

Based on the above results, in order to eliminate the generation of dust and to eliminate the unevenness in the axial direction of the cylindrical substrate, it is necessary to contact the cylindrical substrate in a non-contact manner and drop it to ground with a certain resistance at high frequencies. Was determined to be necessary. A capacitor is considered as a structure having such a function. That is, for example, in the case of a cylindrical substrate whose upper part is supported by a rotating shaft, an earth electrode grounded to the deposition chamber near the lower side of the cylindrical substrate is installed so as not to hinder the rotation of the substrate. Then, the cylindrical substrate and the ground electrode grounded form a kind of capacitor. In a conventional plasma CVD apparatus using a low frequency, a capacitor formed in this manner has a capacity that is too small to allow current to flow, but when a high frequency such as 20 to 450 MHz is used as in the present invention, such a capacitor is used. Even a low-capacity capacitor can sufficiently supply current. Therefore, if the capacitance of the capacitor is adjusted to an appropriate value by adjusting the overlapping area of the grounded earth electrode and the cylindrical base and the distance between the two, the lower part of the cylindrical base can be grounded by C coupling. Becomes

In order to form a C-coupling directly with the cylindrical substrate, it is sufficient to provide an earth electrode that is grounded as close as possible without contacting the inside of the cylindrical substrate. In addition, when film formation is performed by attaching auxiliary substrates above and below the cylindrical substrate, a grounded earth electrode may be provided close to the outside or inside of the auxiliary substrate. The grounded earth electrode may be provided over the entire circumference of the cylindrical base or the auxiliary base, or may be provided only on a part of the circumference.

In a deposited film forming apparatus for forming a film with high frequency power of a certain frequency f (Hz), if the inductance of the rotating shaft is L (H), the capacitance C (F) of the C coupling of the present invention is Is determined by

C = (4π ² f ² L) ^{-1 It} is difficult to calculate the inductance of the rotating shaft when the shape is complicated, but the effect of the present invention can be obtained by using a value approximated roughly as a cylindrical rod. You don't need to pay too much attention because you can get enough. Alternatively, it may of course be determined after actually measuring using an LCR meter or the like. Also, it is not necessary to strictly realize the value of C obtained from the calculation,
If the thickness is designed to be between 0.1 times and 10 times, the film thickness unevenness in the axial direction can be sufficiently reduced to a level at which there is no practical problem.

In order to specifically design a C coupling from the value of C obtained from the above equation, the overlapping area between the grounded electrode and the cylindrical substrate is defined as S, and the distance between the grounded electrode and the cylindrical substrate is defined as S. Is a distance d, it is sufficient to attach a ground electrode installed so as to satisfy S / D = C / ε. Here, ε is a dielectric constant. Although the value of the dielectric constant ε varies strictly depending on the type and pressure of the source gas introduced into the deposition chamber, the effect of the present invention can be sufficiently obtained even if the dielectric constant in a vacuum is roughly used.

In the apparatus for forming a deposited film of the present invention, the cylindrical substrate can be rotated. However, the effect of the present invention cannot be obtained unless the cylindrical substrate is rotated. Even if the film is formed in a stationary state, the film thickness unevenness and film quality unevenness in the axial direction can be sufficiently reduced.
Further, if the holding mechanism for the cylindrical base is a mechanism for holding the upper or lower part of the cylindrical base similar to the present invention, the effect of the present invention can be obtained even if the mechanism is not rotatable.

Hereinafter, each device and others according to the present invention will be described in detail with reference to the drawings.

(1) Deposited Film Forming Apparatus 1 FIG. 1 schematically shows an example of an apparatus for carrying out the method of the present invention. The deposited film is formed on a cylindrical substrate such as an electrophotographic photosensitive member. It is suitable for the creation of

In FIG. 1, reference numeral 100 denotes a deposition chamber for forming a deposited film, which is connected to an exhaust device (not shown) through an exhaust port 111. Reference numeral 107 denotes a source gas inlet for introducing the source gas into the deposition chamber, and introduces the source gas into the deposition chamber from a gas supply system (not shown). Reference numeral 102 denotes a cylindrical substrate on which a desired photoreceptor film is formed;
3 and attached to the rotating shaft 105.
The rotating shaft 105 is driven by a driving motor 108 from the bottom lid of the deposition chamber 100 to the upper part to rotate the cylindrical expectation 102 and the auxiliary base 10.
3 and rotatably mounted. The upper part of the cylindrical base 102 and the auxiliary base 103 is connected to the ground by the rotating shaft 105. 104 is a cylindrical substrate 102
Is a substrate heating heater for heating the substrate to a predetermined temperature, and is fixed in the deposition chamber 100. Further, the cylindrical substrate 102 is rotated by a drive motor 108 via a rotation shaft 105 to achieve a uniform thickness in the circumferential direction. Reference numeral 110 denotes a high frequency power supply for generating a high frequency of 20 MHz to 450 MHz, and a high frequency output is wired via a matching circuit 109 so as to be applied to the cathode electrode 101 which is electrically insulated from the ceiling lid and the bottom plate of the deposition chamber 100. Have been. As shown in the figure, the cathode electrode 101 may also serve as the inner wall of the deposition chamber 100.

Reference numeral 106 denotes an earth electrode according to the present invention, which is an auxiliary base 1 which is a means for non-contact installation.
The main part of the capacitor is formed in a cylindrical shape outside the auxiliary base 103 so as not to come into contact with the main body 03 and overlapping with each other. The capacity of this capacitor depends on the height of the ground electrode 106 and the ground electrode 10.
It can be set arbitrarily by changing the distance between 6 and the auxiliary base 103. In this device configuration, the cylindrical substrate 10
2 is grounded to the deposition chamber 100 via the rotating shaft 105, but is not limited to 20 MHz or 50 MHz to 450 MHz.
At a high frequency such as z, the inductance L of the rotating shaft 105 cannot be ignored, and therefore has a certain resistance before it falls to the ground. The capacitance of the capacitor C formed between the ground electrode 106 and the auxiliary base 103 is adjusted so as to have a resistance value substantially equal to the resistance value corresponding to the impedance value due to the inductance L. Specifically, assuming that the frequency of the power supplied from the high-frequency power supply 110 is f, the auxiliary substrate 103 has a value of C calculated by C = (4π ² f ² L) ⁻¹ .
, The configuration of the ground electrode 106 may be set. That is, the inductance L of the rotating shaft 105 and the auxiliary base 103 and the resonance frequency of the capacitor C mainly between the ground electrode 106 and the auxiliary base 103 may be selected to a value that matches the oscillation frequency of the high-frequency power supply 110.

(2) Deposition Film Forming Apparatus 2 FIG. 2 schematically shows another example of an apparatus for performing one method according to the present invention, and is a cylindrical substrate such as an electrophotographic photosensitive member. It is suitable for the formation of a deposited film. In this apparatus, the cylindrical base 202 and the auxiliary base 203 are supported so as to be suspended from the upper part of the deposition chamber. The earth electrode 206 is provided inside the auxiliary base in this device. Other components are the same as those in FIG.

In FIG. 2, a driving motor 208 is provided on the ceiling lid in the deposition chamber 200, and the auxiliary base 20 is moved from the ceiling lid.
Drive motor 2 in a state where
Reference numeral 08 indicates a rotatable state, and the auxiliary base 203 holds the cylindrical base 202. Further, inside the auxiliary base 203, a cylindrical base heating heater 204 is provided around the center axis fixed to the bottom lid, and heats the cylindrical base 202 to a predetermined temperature. The ground electrode 206 is provided for the auxiliary base 20.
3, a predetermined capacitor capacity is formed by the facing area. The source gas is supplied to the deposited film forming apparatus 1
Is introduced from the gas inlet 207, the internal pressure in the deposition chamber 200 is reduced by the outlet 211, and the high-frequency power from the high-frequency power source 210 passes through the matching box 209 for matching. Is supplied to the cathode electrode 201 electrically insulated from the upper and lower lids, and generates a glow discharge in the glow discharge portion 212 in the deposition chamber 200 to form a film containing predetermined silicon on the cylindrical base 202. .

Here, the rotary shaft 205 and the ceiling lid are in contact with each other and are grounded, and the inductance L from the contact portion to the auxiliary base 203 satisfies one of the above-mentioned conditions. The entire upper and lower lids are virtually grounded with respect to the cathode electrode 201, and the deposition chamber 200
Activate inside.

(3) Deposition Chamber Forming Apparatus 3 FIG. 3 schematically shows still another example of an apparatus for performing one method according to the present invention. In this apparatus, the substrate heater 304 is mounted downward from the upper portion of the deposition chamber, and the cylindrical substrate 302 is mounted on a rotating shaft 305 mounted at the lower portion of the deposition chamber. In this example, the auxiliary substrate is not used, and if the ground electrode 306 is provided outside the cylindrical substrate 302, a portion blocking the glow discharge is generated at the overlapping portion with the cathode electrode 301, and the film thickness distribution becomes uneven. , Are installed inside the cylindrical substrate 302. Other components are the same as those in FIG.

In the present deposition chamber forming apparatus 3, a rotary shaft 305 is rotated by a rotary drive motor 308 at the center of the deposition chamber 300, a rotary table is provided above the rotary shaft 305, and a cylindrical base is placed on the rotary table. 302 is fixedly mounted and rotated. The raw material gas is introduced from a gas inlet 307, exhausted from an exhaust port 311 to make the inside of the deposition chamber 300 a predetermined internal pressure, and the cylindrical substrate 302 is heated to a predetermined temperature by a substrate heating heater 304 fixed to a ceiling lid. By heating, high-frequency power is supplied from the high-frequency power supply 310 to the cathode electrode 301 electrically insulated from the upper and lower lids via the matching box 309 for matching to activate a predetermined gas in the deposition chamber 300. A glow discharge is generated. Then, a predetermined film quality is formed on the cylindrical substrate 302 with a predetermined film thickness, and the above-mentioned steps are repeated for forming a multilayer.

In this case, the bottom cover and the rotary shaft 305 are in contact with each other and are grounded, and the inductance L from the contact portion to the portion where the rotary shaft 305 and the cylindrical base 302 are in contact with each other.
Is formed, and the area facing the distance between the ground electrode 306 and the cylindrical substrate 302 is increased or decreased so that the above condition is satisfied by the capacitance C of the capacitor between the ground electrode 306 and the cylindrical substrate 302. Therefore, the cylindrical substrate 302 needs to be conductive, and when a ceramic is used as the cylindrical substrate, a conductor is coated on the surface or inside by vapor deposition or the like to be a conductive substrate.

(4) Deposition Film Forming Apparatus 4 FIG. 4 shows the ground electrode 406 and the auxiliary substrate 40 according to the present invention.
Although another example of the shape of No. 3 is schematically shown, it is a matter of course that a large capacitor capacitance can be formed by forming a brim on the ground electrode 406 and the auxiliary base 403 in this manner.

In the deposition chamber forming apparatus 4, a rotation shaft 405 is rotated by a rotation drive motor 408 at the center of the deposition chamber 400, and an auxiliary base 403 is disposed above the rotation shaft 405. The auxiliary base 403 fixed in contact and the cylindrical base 402 attached to the auxiliary base 403 rotate together with the rotation shaft 405. The raw material gas is introduced from a gas inlet 407, exhausted from an exhaust port 411 to make the inside of the deposition chamber 400 a predetermined internal pressure, and a predetermined temperature of the cylindrical base 402 is heated by a base heating heater 404 fixed outside the rotating shaft 405. , And high-frequency power is supplied from a high-frequency power supply 410 to a cathode electrode 401 that is electrically insulated from the upper and lower lids via a matching box 409 for matching. Glow discharge is generated in the glow discharge unit 412 in order to activate. Then, a predetermined film quality is formed on the cylindrical substrate 402 with a predetermined film thickness, and the above-mentioned steps are repeated for forming a multilayer.

In this case, the bottom cover and the rotating shaft are in contact with each other and grounded, and the above-mentioned inductance L is formed from the contact portion to the upper auxiliary substrate 403, and between the flange of the ground electrode 406 and the auxiliary substrate 403. With the capacitance C of the capacitor, the distance between the flange between the ground electrode 406 and the auxiliary base 403 and the area facing the flange are increased or decreased so as to satisfy the above condition.

(5) Deposition Film Forming Apparatus 5 FIG. 5 schematically shows still another example of the present invention. The portion of the capacitor that takes the ground under the cylindrical substrate 502 is the same as that of FIG. 1, but in this example, six cylindrical substrates 502 are arranged concentrically around the cathode electrode 501, and the cathode electrode is located at the center. 501 is provided, and discharge occurs in a space surrounded by the cathode electrode 501 and the cylindrical base 502.

In the present deposition chamber forming apparatus 5, a cathode electrode 501 is provided at the center of the deposition chamber 500, and each rotary shaft 505 is rotated by each rotary drive motor 508, and each rotary shaft 505 is contact-fixed at the upper portion of the rotary shaft 505. Auxiliary substrate 503 and each cylindrical substrate 502 attached to the auxiliary substrate 503
Rotate with the rotation shaft 505. The raw material gas is introduced from a gas inlet 507, exhausted from an exhaust port 511 to make the inside of the deposition chamber 500 a predetermined internal pressure, and a predetermined temperature of the cylindrical substrate 502 is heated by a substrate heating heater 504 fixed outside the rotating shaft 505. , And high-frequency power is supplied from the high-frequency power supply 510 to the cathode electrode 501 electrically insulated from the upper and lower lids from the high-frequency power supply 510 via the matching box 509 for matching, so that the cathode electrode in the deposition chamber 500 is Glow discharge for activating a predetermined gas is generated between the cylindrical substrates 502. Thus, a predetermined film quality is formed on each of the cylindrical substrates 502 with a predetermined film thickness. Further, in order to form a thin film layer into multiple layers, the above is further repeated.

In this case, the bottom lid and each of the rotating shafts 505 are in contact with each other and are grounded, and the upper auxiliary base 503 is connected from the contact portion.
Is formed up to the portion that contacts the ground electrode 506 and the capacitance C of the capacitor between the ground electrode 506 and the auxiliary base 503 so that the capacitance between the ground electrode 506 and the auxiliary base 503 is satisfied. Increase or decrease the area facing the distance.

(6) Regarding each deposited film forming apparatus In the above-described apparatuses, any material used for the ground electrodes 106 to 506 can be used as long as it is resistant to heat and has high conductivity. Further, for the purpose of minimizing the inductance L of the ground electrodes 106 to 506 itself,
Preferably, the material used has a low magnetic permeability. Further, since the high frequency is conducted only through the outermost surface of the conductor by the skin effect, a shape having a surface area as large as possible is preferable. In order to form a capacitor, a flat plate shape is generally simple, and a wave-like undulation or a high dielectric constant, such as ceramic, may be applied to the facing portion of the capacitor. As specific materials for the ground electrode, copper, aluminum, gold, silver, and platinum are preferable because of their high conductivity and low magnetic permeability. Lead, nickel, cobalt, iron, chromium, molybdenum, titanium and stainless steel are also suitable because they are resistant to heat. Alternatively, a composite material of two or more of these materials is also preferable.

The high frequency power supplies 110 to 510 used are:
Anything can be used as long as the oscillation frequency is from 20 MHz to 450 MHz. The output is 10W to 500
Any output can be suitably used as long as power suitable for the device can be generated up to 0 W or more.

Further, it is preferable that the output fluctuation rate of the high-frequency power source is small, but the effect of the present invention can be obtained even if there is a slight fluctuation.

As the matching circuits 109 to 509 to be used, any configuration can be suitably used as long as the matching between the high-frequency power supply and the load can be achieved. In addition, as a method of obtaining the alignment, a method that is automatically adjusted is preferable in order to avoid complexity at the time of manufacturing.However, even a method that is manually adjusted does not affect the effect of the present invention. It is desirable because of its low cost. Also, matching circuits 109 to 509
There is no problem with the position where is arranged within the range where matching can be achieved, but since it handles high frequency, it is better to arrange as small as possible the inductance of the wiring between the matching circuit and the cathode. ,
This is desirable because matching can be achieved under a wide range of load conditions.

As the material of the cathode electrodes 101 to 501, copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, stainless steel, etc. have good heat conductivity and good electric conductivity. This is preferable. Two or more composite materials among these materials are also suitably used. In addition, the shape is preferably a cylindrical shape for ease of processing, but an elliptical shape or a polygonal shape may be used if necessary. The cathode electrodes 101 to 501 may be provided with a cooling means as needed. As specific cooling means,
Cooling with water, air, liquid nitrogen, Peltier elements, etc. is used as needed.

The cylindrical substrates 102 to 502 and the auxiliary substrates 103, 203, 403, 503 of the present invention may be made of any material as long as it is suitable for the purpose of use. As the material, copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, and stainless steel are preferable because of their good electrical conductivity. Further, two or more composite materials among these materials are also desirable for improving heat resistance. Furthermore, polyester, polyethylene,
Insulating materials such as polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, glass, ceramics, paper, and the like, which are coated with a conductive material, are preferable because the cost can be reduced. However, as described above, it is particularly preferable that the insulating material is coated on the cylindrical substrate 302 with a conductive material.

(7) Example of Operation of Deposited Film Forming Apparatus In the apparatus shown in FIG. 1, one example of the method of forming a deposited film according to the present invention is performed as follows. Note that this procedure can be similarly applied to the apparatus shown in FIGS. 2 to 5, and a description thereof will be omitted.

First, a cylindrical substrate 102 whose surface has been mirror-finished using a lathe, for example, is mounted on an auxiliary substrate 103, and is mounted on a rotating shaft 105 so as to include a substrate heating heater 104 in the deposition chamber 100.

Next, the source gas introduction valve (not shown) is closed, the inside of the deposition chamber 100 is once evacuated by the exhaust device (not shown) through the exhaust port 111, and then the source gas introduction valve (not shown) is opened to heat. For example, argon as an example, is introduced into the deposition chamber 100 from the source gas inlet 107, and the exhaust speed of the exhaust device and the flow rate of the heating gas are adjusted so that the interior of the deposition chamber 100 has a desired pressure. . afterwards,
While rotating the cylindrical base 102 by the drive motor 108, the temperature controller (not shown) is operated to heat the cylindrical base 102 by the base heating heater 104. When the cylindrical substrate 102 is heated to a desired temperature, the unillustrated source gas introduction valve is closed, and the deposition chamber 100 is closed.
Stop the gas flow into the interior.

The deposited film is formed by opening a source gas inlet valve (not shown) and feeding a predetermined source gas, for example, a material gas such as silane gas, disilane gas, methane gas, ethane gas, etc., and a diborane gas, phosphine gas or the like from the source gas inlet 107. After the doping gas is mixed by a mixing panel (not shown), the mixed gas is introduced into the deposition chamber 100, and the pumping speed is adjusted so as to maintain a predetermined pressure of several mTorr to several Torr. After the pressure is stabilized,
The power of 10 is turned on to supply electric power of a frequency of 20 MHz to 450 MHz to generate glow discharge. At this time, the matching circuit 109 is adjusted so that the reflected wave is minimized. The value obtained by subtracting the reflected power from the high-frequency incident power is adjusted to a desired value. When a desired film thickness is formed, the glow discharge is stopped, the flow of the source gas into the deposition chamber 100 is stopped, and the inside of the deposition chamber 100 is discharged. After the film is once pulled up to a high vacuum, the formation of the film layer is completed. During this time, the film is formed while rotating the cylindrical substrate 102 in order to equalize the film thickness in the circumferential direction. When stacking deposited films having various functions, the above operation is repeatedly performed while changing the type of the source gas.

[0062]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(1) << Embodiment 1 >> First, Embodiment 1 will be described. In the deposited film forming apparatus shown in FIG. 1, a high-frequency power source having an oscillation frequency of 105 MHz was installed, and a
A -Si film was formed to prepare a photoconductor for electrophotography. The inductance L was calculated by approximating the rotation axis of the deposited film forming apparatus to a column and found to be 0.15 μH.
Then, the resonance capacitor capacitance C was calculated by applying to C = (4π ² f ² L) ^−1.
pF. Therefore, the size and interval of the facing portion of the ground electrode 106 are set so that the capacitor formed by the auxiliary base 103 and the ground electrode 106 has this value in a vacuum. In this embodiment, the ground electrode 106 is formed in a cylindrical shape, and is provided over the entire circumference of the auxiliary base 103 in the circumferential direction.

The film formation was performed in accordance with the manufacturing conditions shown in Table 1.

[0065]

[Table 1]

Comparative Example 1 In the conventional deposited film forming apparatus shown in FIG. 6, a high-frequency power source having an oscillation frequency of 105 MHz was installed, and an a-Si film was formed on an aluminum cylindrical substrate. A photoreceptor was made.

The film formation was carried out in the same manner as in Example 1 according to the manufacturing conditions shown in Table 1.

Comparative Example 2 As in Comparative Example 1, the lower part of the auxiliary base 603 was rubbed with a metal brush whose ground was grounded by the conventional deposited film forming apparatus shown in FIG. Dropped. In this comparative example, the oscillation frequency is 105M
A high-frequency power source of 1 Hz was installed, and an a-Si film was formed on a cylindrical aluminum substrate to prepare a photoconductor for electrophotography.

The film formation was carried out in the same manner as in Example 1 in accordance with the manufacturing conditions shown in Table 1.

<< Evaluation Criteria >> The electrophotographic photosensitive members prepared in Example 1 and Comparative Examples 1 and 2 were evaluated by the following methods.

Evaluation of Film Thickness Distribution and Deposition Rate The film thickness of each photoconductor at 16 locations in the axial direction was measured by an eddy current film thickness meter (manufactured by Kett Scientific Research Institute). The ratio of the film thickness distribution was defined by dividing the difference by the average film thickness, and was classified into the following ranks.

非常 Very good 良好 Good 無 し No practical problem × No practical problem At the same time, the deposition rate was determined by dividing the total film thickness by the film forming time and evaluated. The evaluation criterion for the deposition rate was based on the apparatus of Comparative Example 1 and was ranked as follows.

◎ 20% or more earlier than Comparative Example 1 ○ 10 to 20% earlier than Comparative Example 1 △ Same as Comparative Example 1 × 20% or more later than Comparative Example 1 Electrophotographic characteristics Canon NP
6060 modified for experiment) and evaluated electrophotographic properties such as initial charging ability and residual potential as follows.

(A) Charging unevenness: An electrophotographic photosensitive member was set in an experimental apparatus, a high voltage of +6 kV was applied to the charger, corona charging was performed, and the surface potential of the dark portion of the electrophotographic photosensitive member was measured by a surface voltmeter. Measure at the development position. Five points are measured in the axial direction of the electrophotographic photosensitive member, and the potential unevenness at this time is evaluated.

(B) Sensitivity unevenness: The electrophotographic photosensitive member is charged to a constant dark area surface potential. Immediately thereafter, a filter is used to irradiate a halogen lamp light excluding light in a wavelength region of 550 nm or more, and the light quantity is adjusted so that the bright portion surface potential of the electrophotographic photosensitive member becomes a predetermined value. At this time, the necessary light amount is converted from the lighting voltage of the halogen lamp light source.
In this procedure, five-point sensitivity is measured in the axial direction of the electrophotographic photosensitive member, and the sensitivity unevenness at this time is evaluated.

そ れ ぞ れ Very good 良好 Good 無 し Good × No problem in practical use 問題 There is a problem in practical use (c) Roughness of image: Copy the halftone chart, observe the obtained halftone image in detail, It was compared with a sample and evaluated.

◎ No roughness was observed at all, and very good. ○ Some slight roughness was observed but was good. △ Fairness was slightly high, but was at the conventional level. × Many roughness was found, and there was a problem in practical use. ) White spot: A black chart (part number: FY9-9073) manufactured by Canon is placed on a platen and a diameter of 0.2 within the same area of a copy image obtained when copying is performed.
The white spots of mm or more were evaluated. The evaluation categories are as follows.

非常 Very good Good △ Although there are white spots, there is no practical problem at the conventional level.

The above results shown in Examples and Comparative Examples are summarized in Table 2.

[0080]

[Table 2]

Although the electrophotographic photosensitive member using the deposited film forming apparatus of the present invention has no unevenness and is excellent, the unevenness is not improved by the conventional deposited film forming apparatus shown in Comparative Example 1. Further, even if the lower part of the auxiliary base shown in Comparative Example 2 is forcibly grounded with a metal brush whose ground is dropped to the ground, not only the unevenness is not improved but also the white spot level is deteriorated, and it becomes impossible to endure practical use. It should be noted that the deposition rate is improved in Example 1 as compared with Comparative Example 1. The reason for this is not clear, but we believe that by taking ground from the upper and lower two places via a capacitor, the impedance of the entire cylindrical body was reduced, and high-frequency power could be applied more efficiently. .

According to the above embodiment, if the side opposite to the side supported by the rotating shaft is grounded in a non-contact manner by a capacitor, unevenness can be improved without deteriorating image defects, and the deposition rate can be improved. It has been found.

(2) << Embodiment 2 >> In the deposition film forming apparatus shown in FIG.
An a-Si film was formed on a cylindrical aluminum substrate by setting a high-frequency power supply of MHz to prepare a photoconductor for electrophotography. In the present deposited film forming apparatus, deposition is performed simultaneously on six substrates. The inductance L was calculated by approximating the rotation axis of each base to a cylinder and found to be 0.15 μH. Then, when C was calculated by applying to C = (4π ² f ² L) ⁻¹ , it was 15.3 pF in the present embodiment. Therefore, the size of the ground electrode 506 and the distance between the auxiliary substrate 503 are set so that the capacitor formed by the auxiliary substrate 503 and the ground electrode 506 has this value in a vacuum. In this embodiment, the ground electrode 506 is formed in a cylindrical shape, and is provided over the entire circumference of the auxiliary base 503 in the circumferential direction.

The film formation was carried out in the same manner as in Example 1 in accordance with the manufacturing conditions shown in Table 1.

Comparative Example 3 A high-frequency power source having an oscillation frequency of 105 MHz was installed in the conventional deposited film forming apparatus shown in FIG. 7, and an a-Si film was formed on an aluminum cylindrical substrate. Created body.

The film was formed under the manufacturing conditions shown in Table 1 in the same manner as in Examples 1 and 2.

The electrophotographic photosensitive members prepared in Example 2 and Comparative Example 3 were evaluated in the same manner as in Example 1 for film thickness unevenness, charging unevenness, sensitivity unevenness, roughness, and white spots. Table 3 shows the results.
Shown in

[0088]

[Table 3]

In the deposited film forming apparatus of the second embodiment according to the present invention, no remarkable improvement was obtained in the deposition rate and white spots, but the image defects were not deteriorated as a whole, and the film thickness unevenness, charging unevenness, etc. Characteristic unevenness is improved, and the deposition rate is also improved as compared with the conventional example.

(3) << Embodiment 3 >> In the deposited film forming apparatus 2 in which the earth electrode 206 shown in FIG.
An a-Si film was formed on a cylindrical aluminum substrate by setting a high-frequency power supply of MHz to prepare a photoconductor for electrophotography. When the rotation axis of the deposited film forming apparatus was approximated to a cylinder and the inductance L was calculated by calculation, it was 0.07 μm.
H. Then, when C was calculated by applying C = (4π ² f ² L) ⁻¹ , it was 100 pF in the present embodiment. In this embodiment, the value of the capacitor of the present invention is 0.1 C,
The effects of the present invention were examined by changing to C, 5C, and 10C (C = 100 pF). In this embodiment, the ground electrode 206 is formed in a cylindrical shape, and is provided over the entire circumference of the auxiliary base 203 in the circumferential direction.

The film was formed under the manufacturing conditions shown in Table 1 in the same manner as in Examples 1 and 2.

Comparative Example 4 In the deposited film forming apparatus shown in FIG. 2, a high-frequency power source having an oscillation frequency of 60 MHz was provided, and an a-Si film was formed on an aluminum cylindrical substrate in the same manner as in Example 2. A photoconductor for electrophotography was prepared. However, in Comparative Example 4, the value of the capacitor of the present invention was 0.05
C and 15C (C = 100 pF).

The electrophotographic photosensitive members prepared in Example 3 and Comparative Example 4 were evaluated for film thickness unevenness, charging unevenness, sensitivity unevenness, roughness, and white spots in the same procedure as in Example 1. Table 4 shows the results.
Shown in

[0094]

[Table 4]

When the value of the capacitor according to the present invention is 0.1 C to 10 C, the effect of the present invention is obtained.
It became clear that the effect diminished when the values deviated to C and 15C. Also, the deposition rate is improved when the capacity of the capacitor is 0.1 C or more.

(4) << Embodiment 4 >> The auxiliary base 403 and the ground electrode 406 shown in FIG. 4 are arranged on the same circumference, and the capacitance between them is mainly formed by flat portions at each end. In the film forming apparatus 4, an a-Si film was formed on an aluminum cylindrical substrate to prepare a photoconductor for electrophotography. The rotation axis of the deposited film forming apparatus was approximated to a cylinder, the inductance L was calculated by calculation, and the value of the capacitor of the present invention was determined to determine the size of the ground electrode. Note that the ground electrode was formed in a cylindrical shape and was installed over the entire circumference of the auxiliary base 403 in the circumferential direction.

In this embodiment, the frequency of the high frequency power
MHz, 50 MHz, 300 MHz, and 450 MHz, and the film was formed according to the manufacturing conditions shown in Table 5 as the film forming conditions. Note that the capacitance of the capacitor is set to a constant value as described above even if the high-frequency frequency differs.

[0098]

[Table 5]

Comparative Example 5 In the deposition film forming apparatus shown in FIG. 4, an a-Si film was formed on an aluminum cylindrical substrate in the same manner as in Example 3 in the same manner as in Example 3, and was used for electrophotography. A photoreceptor was made. However, in Comparative Example 5, the frequencies of the high-frequency power supply were 13.56 MHz and 500 MHz.

The electrophotographic photosensitive members prepared in Example 4 and Comparative Example 5 were processed in the same manner as in Example 1 to obtain the film thickness unevenness, deposition rate,
Evaluations were made for charging unevenness, sensitivity unevenness, roughness, and white spots. Table 6 shows the results.

[0101]

[Table 6]

The frequency of the high frequency power supply is 20 MHz to 450
In MHz, the effect of the present invention is obtained, and in particular, 50 MHz
At z to 450 MHz, the deposition rate is improved and the film formation time can be reduced. However, at 13.56 MHz, the film deposition time cannot be reduced. At 500 MHz, the deposition rate is high.
It can be seen that unevenness such as charging unevenness and sensitivity unevenness particularly occurs in the axial direction, and the effect of the present invention cannot be obtained.

(5) << Embodiment 5 >> In a deposition film forming apparatus shown in FIG. 5, which can simultaneously form a plurality of cylindrical substrates 502, a high-frequency power source having an oscillation frequency of 105 MHz is installed, and an aluminum cylindrical substrate is formed. 5
An a-Si film was formed on No. 02 to prepare an electrophotographic photoreceptor. When the rotation axis 505 of the deposited film forming apparatus was approximated to a cylinder and the inductance L was calculated by calculation, it was found that the inductance L was 0.5.
2 μH. Then, when C was calculated by applying to C = (4π ² f ² L) ⁻¹ , 11.5 pF was obtained in this embodiment.
It became. Therefore, the size and interval of the ground electrode 506 are set so that the capacitor formed by the auxiliary base 503 and the ground electrode 506 has this value in a vacuum. In this embodiment, the ground electrode 506 is formed in a cylindrical shape, and is provided over the entire circumference of the auxiliary base 503 in the circumferential direction.

The film was formed according to the manufacturing conditions shown in Table 5 in the same manner as in Example 4.

The evaluation of each photosensitive member was performed in the same manner as in Example 1. As a result, the same good results as in Example 1 were obtained with any of the photosensitive members formed in Example 5.

The photoreceptor obtained as a result of Example 5 was set in a copying machine NP-6650 manufactured by Canon and an image was produced. As a result, a uniform image was obtained without unevenness in the halftone image. Further, when the text original was copied, a clear image having a high black density was obtained. Also, when copying a photographic original, a clear image faithful to the original could be obtained.

(6) << Embodiment 6 >> The cylindrical substrate 302 shown in FIG. 3 is placed on a rotating shaft 305 attached to the lower part of the deposition chamber, and the ground electrode 306 is lowered from the ceiling lid. In the deposited film forming apparatus 3 in which a predetermined capacitor has been formed between the cylindrical substrate 302 and the cylindrical substrate 302, a high-frequency power source having an oscillation frequency of 80 MHz is installed, and a-Si is formed on the aluminum cylindrical substrate 302.
A film was formed, and a photoconductor for electrophotography was prepared. In the present embodiment, the ground electrode 305 is １ ／ of the cylindrical base 302 in the circumferential direction.
The thing of the shape facing only the circumference was installed. Earth electrode 30
The size of 5 was determined by calculating the inductance L by approximating the rotation axis of the deposited film forming apparatus 3 to a column and calculating the value of the capacitor of the present invention.

As in the case of Example 4, the film was formed under the manufacturing conditions shown in Table 5.

The evaluation of each photoconductor in Example 6 was performed in the same manner as in Example 1.
The same good results as those described above were obtained.

Further, the obtained photoreceptor was transferred to a Canon copier N
When placed on P-6650 and an image was output, a uniform image was obtained without unevenness in the halftone image. Further, when the text original was copied, a clear image having a high black density was obtained. Also, in copying a photo original, a clear image faithful to the original could be obtained.

[0111]

According to the deposited film forming apparatus of the present invention,
In film formation using a high frequency of 20 MHz to 450 MHz, it is possible to reduce the thickness unevenness in the axial direction without increasing image defects. In addition, the high frequency of 50 to 450 MHz further improves the deposition rate.

According to the apparatus for forming a deposited film according to the present invention, it is possible to manufacture an electrophotographic photosensitive member free from density unevenness, sensitivity unevenness, and image roughness in film formation at a high frequency of 20 MHz to 450 MHz.

Further, according to the deposited film forming apparatus of the present invention, it is possible to uniformly perform plasma processing on a substrate having a relatively large area at a processing speed higher than that of a conventional plasma process.

Further, according to the deposited film forming apparatus according to the present invention, it is possible to manufacture an electrophotographic photosensitive member having a short manufacturing time and low cost.

[Brief description of the drawings]

FIG. 1 is a schematic view showing an example of a deposited film forming apparatus of the present invention provided for forming one cylindrical substrate according to the present invention.

FIG. 2 is a schematic view showing one example of a deposited film forming apparatus of the present invention used for forming one cylindrical substrate according to the present invention.

FIG. 3 is a schematic view showing one example of a deposited film forming apparatus of the present invention used for forming one cylindrical substrate according to the present invention.

FIG. 4 is a schematic view showing an example of a deposited film forming apparatus of the present invention provided for forming one cylindrical substrate according to the present invention.

FIG. 5 is a schematic view showing an example of a deposited film forming apparatus of the present invention provided for forming a plurality of cylindrical substrates according to the present invention.

FIG. 6 is a schematic view showing an example of a conventional deposited film forming apparatus.

FIG. 7 is a schematic view showing an example of a conventional deposited film forming apparatus provided for forming a plurality of cylindrical substrates.

[Explanation of symbols]

100, 200, 300, 400, 500, 600, 7
00 Deposition chambers 101, 201, 301, 401, 501, 601, 7
01 cathode electrode 102,202,302,402,502,602,7
02 cylindrical substrate 103, 203, 403, 503, 603, 703 auxiliary substrate 104, 204, 304, 404, 504, 604, 7,
04 Heater for heating substrate 105, 205, 305, 405, 505, 605, 7
05 Rotation axis 106, 206, 306, 406, 506 Earth electrode 107, 207, 307, 407, 507, 607, 7
07 Source gas inlets 108, 208, 308, 408, 508, 608, 7
08 Substrate drive motor 109, 209, 309, 409, 509, 609, 7
09 Matchers 110, 210, 310, 410, 510, 610, 7
10 High frequency power supply 111, 211, 311, 411, 511, 611, 7
11 Exhaust port

Continuation of the front page (56) References JP-A-6-287760 (JP, A) JP-A-6-302521 (JP, A) JP-A-5-217915 (JP, A) JP-A-3-240965 (JP) , A) JP-A-60-116125 (JP, A) JP-A-6-342764 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/205 C23C 16/50

Claims (12)

(57) [Claims] 1. A substrate heating heater is fixed in a vacuum-tight hermetic deposition chamber provided with an exhaust means and a raw material gas supply means, and a cylindrical substrate serving also as one of discharge electrodes is provided so as to enclose the substrate heating heater. A cylindrical base with an auxiliary base is rotatably installed, and a high-frequency power having a frequency of 20 MHz to 450 MHz is applied between a separately provided cathode electrode to generate a glow discharge, which is introduced into a deposition chamber by the glow discharge. In a deposition film forming apparatus by a plasma CVD method for forming a film by depositing a solid containing silicon from the source gas on the cylindrical substrate, one end in the generatrix direction of the cylindrical substrate is An apparatus for forming a deposited film, comprising: a non-contact grounding means that is grounded by a rotating shaft that rotates and the other end is grounded in a non-contact manner. 2. The non-contact grounding means is formed by forming a capacitor between the cylindrical base or the auxiliary base and a ground electrode installed adjacent to the auxiliary base without contacting the cylindrical base or the auxiliary base. The capacitor C has a capacitance C (farad) at this time. When the frequency of the high-frequency power is f (hertz) and the inductance of the rotating shaft is L (Henry), 0 .1 (4π ² f ² L) ⁻¹ ≦ C ≦ 10 (4π ^2
2. The deposited film forming apparatus according to claim 1, wherein f ² L) ^-1 is satisfied. 3. The non-contact grounding means forms a capacitor with a ground electrode, and the capacitance C (Farad) of the capacitor changes the frequency of the high frequency power to f (Hertz) and the inductance of the rotating shaft changes. When L (Henry), 0.5 (4π ² f ² L) ⁻¹ ≦ C ≦ 5 (4π ² f
^2. The deposited film forming apparatus according to claim 1, wherein ² L) ^-1 is satisfied. 4. The deposition film forming apparatus according to claim 2, wherein the capacitor is provided on the entire outer circumference or a part of the outer circumference of the cylindrical base or the auxiliary base. 5. The deposited film forming apparatus according to claim 2, wherein the capacitor is provided on the entire inner circumference or a part of the inner circumference of the cylindrical base or the auxiliary base. 6. The cylindrical base is installed in parallel with the rotation axis, the upper part of the cylindrical base in the generatrix direction is held and grounded by the rotation axis, and the lower part of the cylindrical base in the generatrix is grounded by the capacitor. 3. The method according to claim 2, wherein
6. The deposited film forming apparatus according to any one of claims 1 to 5. 7. The cylindrical base is installed parallel to the rotation axis, the lower part of the cylindrical base in the generatrix direction is held and grounded by the rotation axis, and the upper part of the cylindrical base in the generatrix is grounded by the capacitor. 3. The method according to claim 2, wherein
6. The deposited film forming apparatus according to any one of claims 1 to 5. 8. The method according to claim 1, wherein a plurality of said cylindrical bases are installed concentrically around a cathode electrode, and said cathode electrode is installed inside a space surrounded by said cylindrical bases. 8. The deposited film forming apparatus according to any one of 7. 9. The deposition film forming apparatus according to claim 1, wherein an oscillation frequency of said high frequency power for causing said glow discharge is not less than 50 MHz and not more than 450 MHz. 10. A vacuum-tightly sealed deposition chamber provided with an exhaust means and a source gas supply means, wherein a cylindrical substrate serving also as one of discharge electrodes or a cylindrical substrate having an auxiliary substrate mounted thereon is rotatably provided. Forming a film on the cylindrical substrate by using a source gas introduced by the source gas supply means by applying a high frequency power of a frequency of 20 MHz to 450 MHz between cathode electrodes provided in the substrate; In the apparatus, a non-contact grounding means is provided, in which one end of the cylindrical base is grounded by a rotation shaft for rotating the cylindrical base, and the other end is grounded in a non-contact manner. 11. The non-contact grounding means forms a capacitor with an earth electrode, and has a capacitance C of the capacitor.
(Farad), when the frequency of the high-frequency power is f (hertz) and the inductance of the rotating shaft is L (Henry), 0.5 (4π ² f ² L) ⁻¹ ≦ C ≦ 5 (4π ² f)
The deposited film forming apparatus according to claim 10, wherein ² L) ^-1 is satisfied. 12. A substrate serving also as a discharge electrode or an auxiliary substrate is provided in a vacuum-tight hermetic deposition chamber provided with an exhaust means and a source gas supply means, and a cathode electrode provided on the other side is provided. Oscillation frequency 50MHz or higher 4
In a deposition film forming apparatus by a plasma CVD method for forming a film on the substrate by using a source gas introduced by the source gas supply means by applying a high frequency power of 50 MHz or less, one end of the substrate is grounded and the other end is A non-contact grounding means for non-contact grounding is provided.