JP2005163166A - Deposition film forming system and deposition film forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a deposition film forming system and a deposition film forming method capable of drastically decreasing the image defects of an electrophotographic photoreceptor, improving the electrostatic chargeability of the electrophotographic photoreceptor, and reducing a cost by reducing the generation of spherical projections due to dust during deposition. <P>SOLUTION: The deposition film forming system and the deposition film forming method form the deposition films having good characteristics on a plurality of cylindrical substrates by arranging the plurality of the substrates at equal intervals on the same circumference, arranging high-frequency electric power introducing means on the outside of a reaction vessel, and introducing the high-frequency electric power therein, wherein the high-frequency electric power introducing means are installed on a plurality of arrangement circles different in diameters. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a deposited film forming apparatus and a deposited film forming method for forming a deposited film on a substrate. More particularly, the present invention relates to a deposited film forming apparatus and a deposited film forming method used for a functional film, particularly a semiconductor device, an electrophotographic photosensitive member, an image input line sensor, a photographing device, a photovoltaic device, and the like.

  Conventionally, as a deposition film forming method used for forming semiconductor devices, electrophotographic photosensitive members, line sensors for image input, photographing devices, photovoltaic devices, other various electronic elements, optical elements, etc., plasma CVD method, ion plating method Many methods using plasma generated by high-frequency power, such as a plasma etching method, are known, and an apparatus therefor has been put into practical use.

  For example, a plasma CVD method, that is, a method in which a source gas is decomposed by high-frequency glow discharge to form a thin deposited film on a substrate has been put into practical use as a suitable deposited film forming means. Various devices have been proposed for use in the formation of deposited films (hereinafter referred to as “a-Si”).

  In particular, plasma CVD using high frequency power in the VHF band (hereinafter abbreviated as “VHF-PCVD”) is attracting attention, and development of various deposited films using this VHF-PCVD method is actively promoted. It has been. This is because in the VHF-PCVD method, the deposition rate of the deposited film is relatively high and a high-quality deposited film can be obtained, so that it is expected that the cost reduction and quality improvement of the product can be achieved at the same time. is there. Development of a deposited film forming apparatus that can form a plurality of a-Si electrophotographic photoreceptors at the same time and has high productivity is in progress.

For example, by arranging a part of the reaction vessel as a dielectric member and arranging a plurality of high-frequency power introduction means outside the reaction vessel, a uniform high-frequency discharge can be easily achieved in a large area, and plasma treatment on a large-area substrate can be performed. An apparatus that enables uniform and high speed operation is disclosed. (For example, see Patent Document 1)
FIG. 3 shows a schematic configuration diagram as an example of such a deposited film forming apparatus.

FIG. 3A is a schematic cross-sectional view, and FIG. 3B is a schematic cross-sectional view taken along a cutting line AA ′ in FIG. The reaction vessel 301 includes a dielectric member 301 (a) and an upper lid 301 (b). An exhaust pipe 309 is connected to the lower part of the reaction vessel 301, and the other end of the exhaust pipe 309 is connected to an exhaust device (not shown) (for example, a vacuum pump). A plurality of cylindrical substrates 305 on which deposited films are formed are arranged on the same circumference so as to be parallel to each other so as to surround the central portion of the reaction vessel 301. The plurality of cylindrical substrates 305 are respectively held by a substrate support 306 having a substrate heating heater 307 built therein. In the reaction vessel 301, there is a gas supply means 310 connected to a gas supply device (not shown) composed of gas cylinders such as SiH 4, GeH 4, H 2, CH 4, B 2 H 6, PH 3, Ar, and He. Is provided with high-frequency power introducing means 302. A high frequency power supply 303 is connected to the high frequency power introducing means 302 via a matching box 304 and a high frequency power branching means 312. Further, the cylindrical base body 305 can be rotated by each rotating mechanism 308.
JP-A-9-310181

  With such a conventional deposited film forming apparatus and method, it is possible to shorten the substrate processing time by increasing the film deposition rate, increase the number of simultaneously processable substrates, and improve the uniformity and reproducibility of the deposited film characteristics. It has become possible to obtain an electrophotographic photosensitive member that is inexpensive and has practical characteristics and uniformity. Further, if the inside of the vacuum reaction vessel is strictly cleaned, it is possible to obtain an electrophotographic photosensitive member having a certain number of defects.

  However, the level of market demand for products using these deposited films is increasing day by day, and higher quality deposited films are being demanded to meet this demand.

  In other words, in recent years, demand for image defects is more severe than ever in color copying machines, for which demand is rapidly expanding. However, in a product that requires a relatively thick deposited film with a large area, such as an electrophotographic photosensitive member, dust is easily generated during the manufacturing process because the manufacturing process of the photosensitive member takes a long time, and Since the area of the deposition surface is large, the probability of dust adhering tends to increase. Since the abnormal growth of the deposited film due to dust is directly connected to the image defect, it is necessary to eliminate it as much as possible.

  Therefore, in order to obtain a deposited film with a high yield in which the film deposition rate is high, the requirements of optical and electrical characteristics are satisfied, and the image formation by the electrophotographic process is small, there is a problem to be improved. It remained.

  The abnormal growth of the deposited film that occurs in the manufacturing process of the photosensitive member is as follows.

  The a-Si film has the property that, when dust of the order of several μm adheres to the surface of the substrate, abnormal growth, that is, so-called “spherical protrusions” grow using the dust as a nucleus during film formation. Spherical protrusions have a shape that is a reversal of the conical shape starting from dust, and there are many localized levels at the interface between the normal deposition part and the spherical protrusion part, so the resistance decreases, and the charged charge passes through the interface. Will come off to the substrate side. For this reason, the part with the spherical protrusion appears as a white point in the solid black image on the image (in the case of reversal development, it appears as a black point in the solid white image). The so-called “pochi” image defect has a stricter standard every year, and depending on the size, even if there are several A3 sheets, they may be treated as defective. Furthermore, the standard becomes more stringent when mounted on a color copying machine, and even if one is present on A3 paper, it may be defective.

  Since these spherical protrusions start from dust, the substrate to be used is precisely cleaned before film formation, and all the steps to be installed in the film formation apparatus are performed in a clean room or under vacuum. In this way, efforts have been made to reduce the amount of dust adhering to the substrate before the start of film formation, and the effect has been improved. However, the cause of the generation of the spherical protrusion is not only the dust adhering to the substrate. That is, when an a-Si photosensitive member is manufactured, the required film thickness is very large, from several μm to several tens of μm, and therefore the film formation time ranges from several hours to several tens of hours. It accumulates not only on the reaction vessel wall but also on the structure in the reaction vessel. Since these furnace walls and structures do not have a controlled surface or temperature like the substrate, the adhesion is weak in some cases, and film peeling may occur during film formation over a long period of time. If even a slight peeling occurs during the film formation, it becomes dust and adheres to the surface of the photoreceptor being deposited, and this causes the abnormal growth of the spherical projections. Therefore, in order to maintain a high yield, it is necessary to carefully manage not only the substrate before film formation but also prevention of film peeling in the reaction vessel during film formation. Making the body difficult.

  Further, in addition to the problem of image defects, the demand for potential characteristics is increasing more than ever with the recent increase in color and speed of copying machines. That is, the colorization of the copying machine has complicated the main body process, which makes it difficult to place the charging unit and the developing unit close to each other. In such a situation, in order to obtain a sufficient surface potential at the development position, higher charging ability is required. Further, the speeding up of the copying machine means that time for charging is taken up, and also in this case, improvement in charging ability is required.

  Furthermore, as the use of copying machines has shifted from character-centered copy originals to images such as photographs, the number of copy originals that frequently use halftone has increased, so that stricter standards are required for density uniformity. It has become. In particular, for a photographic manuscript, the demand for a phenomenon called ghost is severe. The ghost referred to here is a phenomenon in which an image copied last time is thinly revealed in a halftone region. Attempts have been made to further reduce ghosts by various methods, but a technique that can be further improved is eagerly desired.

  An object of the present invention is to overcome various problems in the conventional electrophotographic photosensitive member as described above, specifically, an image defect caused by spherical protrusions, and has an excellent characteristic such that the charging ability is high and the ghost is small. An object of the present invention is to provide a deposited film forming apparatus and a deposited film forming method capable of manufacturing a photographic photosensitive member stably at a low cost and with a high yield.

  As a result of intensive studies to achieve the above object, the inventors of the present invention have found that at least a part of the reaction vessel made of a dielectric member can be decompressed, and a plurality of reaction vessels arranged on the same circumference inside the reaction vessel. And a plurality of high-frequency power introducing means arranged outside the reaction vessel, applying high-frequency power to the high-frequency power introducing means, In a deposited film forming apparatus that decomposes the raw material gas introduced into the reaction vessel by generating a discharge and forms a deposited film on the plurality of cylindrical substrates, the high-frequency power introducing means has a plurality of different diameters. It has been found that by arranging on the arrangement circle, it is possible to significantly reduce the generation of spherical protrusions and at the same time improve the electrical characteristics.

  The embodiment of the present invention capable of obtaining the above effects will be described in detail below.

  The present inventors have improved image defects caused by spherical projections in a deposited film forming apparatus in which a plurality of cylindrical substrates are arranged at equal intervals on the same circumference and high-frequency power introduction means are arranged outside the reaction vessel. Therefore, a method for reducing the generation of dust by improving the adhesion of the deposited film adhering to the inner surface of the reaction vessel was examined. First, after examining in detail the adhesion of the deposited film in the reaction vessel after the film formation was completed, it was separated from the deposited film adhering to the reaction vessel wall in the vicinity of the high-frequency power introducing means and the high-frequency power introducing means. It was discovered that the adhesion and stress of the film differed depending on the deposited film at the position.

  The deposited film forming apparatus conventionally used is typically shown in FIG. 3 and FIG. In the deposited film forming apparatus shown in FIG. 3, the high-frequency power introducing means 302 is disposed concentrically with the cylindrical substrate 305 and is disposed at a position facing the cylindrical substrate 305. When the high-frequency power introducing means 302 is configured as described above, the cylindrical base 305 serving as a counter electrode is close in distance, so that high-frequency power is efficiently input. For this reason, the power density between the high-frequency power introducing means 302 and the cylindrical substrate 305 is increased, and the wall of the reaction vessel 301 (a) located between them is exposed to high power. As a result, the dehydrogenation reaction proceeds from the deposited film adhering to the reaction vessel wall, the stress in the film increases, and film peeling easily occurs depending on the film forming conditions. Even if the film is peeled off from the reaction vessel wall, the distance to the cylindrical substrate 305 is short, which is a serious factor causing abnormal growth such as spherical protrusions.

  In the deposited film forming apparatus shown in FIG. 4A, the high-frequency power introducing means 302 is arranged concentrically with the cylindrical substrate 305 and located between the cylindrical substrates 305. When the arrangement of the high-frequency power introducing means 302 is such a configuration, the power input efficiency is reduced because the distance between the high-frequency power introducing means 302 and the cylindrical base 305 serving as a counter electrode is long, and the cylindrical base facing the cylindrical base. If power equivalent to the position is input, it causes deterioration of the photoreceptor characteristics. If the input power is increased to compensate for the characteristics of the photoreceptor, the film quality of the film deposited on the reaction vessel wall near the high-frequency power introducing means 302 changes, which may cause film peeling depending on the film formation conditions.

  In the deposited film forming apparatus shown in FIG. 4B, the high-frequency power introducing means 302 is provided concentrically with the cylindrical substrate 305 and at a position facing the cylindrical substrate 305 and between the cylindrical substrates 305. When the arrangement of the high-frequency power introducing means 302 is such a configuration, the high-frequency power introducing means 302 arranged at the position opposed to the cylindrical base body 305 is closer to the distance than the one arranged between the cylindrical base bodies, The introduction efficiency of high frequency power is increased. On the contrary, the high frequency power introducing means 302 disposed between the cylindrical bases has a long distance, so that the introduction efficiency is lowered. Therefore, in the deposited film apparatus shown in FIG. 4B, as a result, most of the high-frequency power is supplied from the high-frequency power introducing means 302 disposed at the position opposed to the cylindrical substrate 305. Depending on the case, there arises a problem of peeling of the reaction vessel 301 (a) from the furnace wall.

  The inventors of the present invention have confirmed that film peeling from the reaction vessel wall generated by this method of introducing high-frequency power is a significant barrier for improving the quality of the electrophotographic photosensitive member. As a result of diligent examination of the countermeasures, when high-frequency power is introduced from the high-frequency power introduction means provided outside the reaction vessel, it is possible to make the power density on the inner surface of the reaction vessel as close as possible to peel off the film from the furnace wall. A conclusion was reached that it was effective in preventing this. Therefore, the number of high-frequency power introducing means was increased as much as possible, and the power distribution was made closer to uniform by arranging them uniformly on the outer periphery of the reaction vessel. As a result, it was confirmed that the film peeling from the reaction vessel wall was less likely to occur as the number of means for introducing high-frequency power was increased. However, depending on the film forming conditions, it could not be improved to the point where no film peeling occurred.

  Therefore, as a result of further investigation, it was concluded that the distance between the high-frequency power introducing means and the cylindrical base body serving as the counter electrode is important for making the power distribution uniform. That is, the position where each high-frequency power introducing means is arranged is adjusted so that the distance between the cylindrical bases closest to the high-frequency power introducing means is equal for all the high-frequency power introducing means. As a result, it was found that even when sufficiently high frequency power was introduced, film peeling from the reaction vessel wall did not occur at all, and a very excellent photoconductor having almost no image defects was obtained.

  The reason for this is now considered as follows. That is, when the high-frequency power introducing means is arranged on the same circumference, the shortest distance from the high-frequency power introducing means to the cylindrical substrate can vary even if the number of electrodes is increased. For this reason, no matter how much the number of high-frequency power introduction means is increased, the introduction efficiency of the high-frequency power is high at a place where the distance between the high-frequency power introduction means and the cylindrical base is short, and it is low at a far place. As a result, although the high-frequency power introduction means is increased, most of the high-frequency power is applied from the point where the introduction efficiency of the high-frequency power is high, and it is difficult to suppress film peeling at that portion. Therefore, in such a state where the shortest distance between the high-frequency power introducing means and the cylindrical base body varies, it has not been possible to improve to the point where there is no film peeling.

  On the other hand, when each high-frequency power introduction means is arranged so that the shortest distance from the high-frequency power introduction means to the cylindrical base body is equal, the introduction efficiency is the same in any high-frequency power introduction means, and the power distribution cannot be uneven. For this reason, by increasing the number of high-frequency power introducing means, the high-frequency power spreads uniformly over the entire reaction vessel wall, and film peeling can be prevented.

  In the present invention, it has been confirmed that the electrical characteristics of the electrophotographic photosensitive member are further improved. In particular, there was a phenomenon that charging ability was improved and ghost was reduced. Although the details of this cause are unknown, since a plurality of high-frequency power introduction means are arranged at equal distances around the cylindrical substrate, the power distribution around the cylindrical substrate is made uniform and the plasma state is also uniform. Is considered to have contributed to improving the quality of the deposited film.

  The present invention has been completed by the above process.

  As described above, according to the present invention, a plurality of cylindrical substrates are arranged at equal intervals on the same circumference, and the high-frequency power introduction means is arranged outside the reaction vessel to introduce the high-frequency power. In the deposited film apparatus and method for forming a deposited film having good characteristics on the high frequency power introducing means, the high frequency power introducing means is arranged on a plurality of arrangement circles having different diameters so that the distance between each high frequency power introducing means and the cylindrical substrate is equal. It is possible to significantly reduce the occurrence of spherical protrusions without sacrificing electrical characteristics. Furthermore, since the high frequency power can be supplied uniformly, the film quality of the deposited film can be improved.

  Hereinafter, a deposited film forming apparatus and a deposited film forming method of the present invention will be described in detail with reference to the drawings.

  FIG. 1 schematically shows an example of a deposited film forming apparatus of the present invention, which is a highly productive apparatus capable of simultaneously forming a plurality of electrophotographic photosensitive members.

  FIG. 1A is a schematic cross-sectional view, and FIG. 1B is a schematic cross-sectional view taken along a cutting line A-A ′ in FIG. The deposited film forming apparatus shown in FIG. 1 restricts a film formation space in which a source gas is decomposed to a cylindrical region by a reaction vessel 101 composed of a dielectric member 101 (a) and an upper lid 101 (b), and forms a cylindrical film. By using a configuration in which the central axis of the space passes through the center of the arrangement circle of the cylindrical base body 105, and by positioning the high-frequency power introduction means 102 outside the dielectric member 101 (a), the utilization efficiency of the source gas is improved. At the same time, it is possible to reduce defects in the deposited film to be formed.

  An exhaust pipe 109 is connected to the lower part of the reaction vessel 101, and the other end of the exhaust pipe 109 is connected to an exhaust device (not shown) (for example, a vacuum pump). A plurality of cylindrical substrates 105 on which a deposited film is formed are arranged on the same circumference so as to be parallel to each other so as to surround the central portion of the reaction vessel 101. The plurality of cylindrical substrates 105 are respectively held by a substrate support 106 in which a substrate heating heater 107 is incorporated. In the reaction vessel 101, there is a gas supply means 110 connected to a gas supply device (not shown) composed of gas cylinders such as SiH 4, GeH 4, H 2, CH 4, B 2 H 6, PH 3, Ar, and He. The high frequency power introducing means 102 is arranged on two arrangement circles having different diameters. A high frequency power supply 103 is connected to the high frequency power introducing means 102 through a matching box 104 and a high frequency power branching means 112. Further, the cylindrical base body 105 can be rotated by each rotating mechanism 108.

  Here, the high frequency power introducing means 102 includes an inner peripheral high frequency power introducing means 102 (a) arranged on the arrangement circle close to the reaction vessel 101, and an outer peripheral high frequency electric power arranged on the arrangement circle far from the reaction vessel 101. By being divided into two types of power introduction means 102 (b), they are arranged on a plurality of arrangement circles having different diameters. The diameter of each of the plurality of arrangement circles is such that the distance (A) from the inner peripheral high-frequency introducing means 102 (a) to the nearest cylindrical base 105 and the closest cylindrical base from the outer peripheral high-frequency power introducing means 102 (b) It is important to determine the distance (B) up to 105 to be equal. When the high frequency power introduction means 102 twice the number of the cylindrical base bodies 105 are arranged, the high frequency power introduction means 102 (a) on the inner periphery is between the cylindrical base bodies, and the high frequency power introduction means 102 (b) on the outer periphery is a cylinder. It is preferable to provide it on the opposing surface of the substrate. Thus, by providing the high-frequency power introducing means 102 so that the distance (A) and the distance (B) are equal, the power density between the cylindrical base 105 and the cylindrical base 105 becomes substantially equal. Since the film quality of the deposited film deposited on the inner surface of the reaction vessel 101 becomes uniform and the stress becomes uniform, an effect of preventing peeling can be obtained. Further, in the case of this deposited film forming apparatus, there are two high-frequency power introducing means 102 for one cylindrical substrate 105. For this reason, for example, as in the deposited film forming apparatus of FIG. 3 or FIG. 4A, one high-frequency power introduction means is provided compared with one high-frequency power introduction means 302 for one cylindrical substrate 305. The high frequency power per hit is ½. For this reason, the power density passing through the wall of the reaction vessel 101 is also ½, which is very effective in preventing peeling of the deposited film.

  On the other hand, in the deposited film forming apparatus of FIG. 4B, there are two high-frequency power introducing means 302 for the cylindrical substrate, which is the same as the deposited film forming apparatus of FIG. It is arranged on a single arrangement circle. For this reason, the high-frequency power introducing means 302 disposed at the position facing the cylindrical base body 305 is closer to the distance than the one disposed between the cylindrical base bodies, and the high-frequency power introducing efficiency is increased. On the contrary, the high frequency power introducing means 302 disposed between the cylindrical bases has a long distance, so that the introduction efficiency is lowered. As a result, the apparatus shown in FIG. 4B includes the same number of high-frequency power introducing means 302 as the apparatus shown in FIG. 1, but as a result, most of the electric power is arranged at a position opposite to the cylindrical substrate 305. The power is supplied from the power introduction means 302, and again, depending on the film forming conditions, there arises a problem of peeling of the reaction vessel 301 (a) from the furnace wall. On the other hand, in the deposited film forming apparatus of FIG. 1 according to the present invention, the distance between the outer peripheral high-frequency power introducing means 102 (b) and the inner peripheral high-frequency power introducing means 102 (a) is equal to the cylindrical substrate 105. Since the power is evenly supplied to the introduction means, the above problem does not occur.

  As the material of the high-frequency power introducing means 102 and the high-frequency power branching means 112, copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, stainless steel, etc. have good heat conduction and electric conduction. It is preferable because it is good. A composite material composed of two or more of these materials is also preferably used.

  The number of high-frequency power introducing means 102 is preferably an integer multiple of twice or more that of the cylindrical substrate 105. When the size is twice that of the cylindrical substrate 105, as shown in FIG. 1B, it is optimal to dispose the cylindrical substrate 105 between the opposed positions of the cylindrical substrate 105 and between the cylindrical substrates. Furthermore, it is more preferable that the number of high-frequency power introducing means 102 is three times that of the cylindrical base body 105. In this case, as shown in FIG. 2 (a), one is arranged at a position opposed to the cylindrical base 105 and two are arranged between the cylindrical bases, or as shown in FIG. 2 (b), There is a method of disposing two in a position opposite to the cylindrical substrate 105 and one between the cylindrical substrates. Here, the “opposing position” of the cylindrical base body 105 means that the cylindrical base body 105 is disposed in a range hidden by the cylindrical base body as viewed from the center of the placement circle of the high-frequency power introducing means 102. Similarly, “between cylindrical substrates” means that the high-frequency power introducing means 102 is arranged in a range that does not overlap the cylindrical substrate 105 when viewed from the center of the arrangement circle. The same method may be used when the number of high-frequency power introducing means 102 is four times or more. At this time, it is very preferable to arrange the high-frequency power introducing means 102 at equal intervals and at equal distances from the cylindrical base body 105 in order to obtain the effects of the present invention.

  The supply of power to the plurality of high-frequency power introducing means 102 can be performed, for example, by branching the power supply path by the high-frequency power branching means 112 after passing through the matching box 104 from one high-frequency power supply 103. Further, for example, the power supply path from one high-frequency power source 103 may be branched by the high-frequency power branching means 112, and then power may be supplied through a plurality of matching boxes. Further, the high-frequency power introducing means 102 is divided into, for example, those located on different arrangement circles, such as those located opposite the cylindrical base 105 and those located between the cylindrical bases, and the high-frequency power introducing means 102 is independently high-frequency for each. A power source 103, a matching box 104, and a high-frequency power branching unit 112 may be provided. In this case, it is also preferable to change the oscillation frequency and applied power of each high-frequency power source as necessary because quality control of the electrophotographic photosensitive member becomes easy. Furthermore, a separate high-frequency power supply and a matching box may be provided for each high-frequency power introduction means 102. However, when importance is attached to the device cost and the size of the device, all high-frequency power introduction means are provided from one high-frequency power supply. It is preferable to supply power to 102.

  As the high-frequency power introducing means 102, rod-shaped, cylindrical, spherical, plate-like high-frequency power introducing means, means for providing an opening in the outer conductor of the coaxial structure, and supplying power from there can be used.

  Any high frequency power source 103 can be used as long as it can generate high frequency power suitable for the apparatus. Further, the output fluctuation rate of the high frequency power supply 103 is not particularly limited.

  In the present invention, the effect of reducing image defects is particularly high when the frequency of the high-frequency power is in the range of 50 to 450 MHz. This seems to be due to the rapid increase in the pressure at which plasma can be stably generated in a frequency region lower than 50 MHz. According to the study by the present inventors, for example, when the frequency is 13.56 MHz, it is confirmed that the pressure at which plasma can be stably generated is about one to half digits higher than that when the frequency is 50 MHz or more. Has been. At such a high pressure, particles such as polysilane are easily generated in the film formation space, and when these particles are taken into the deposited film, spherical protrusions are easily generated. In the present invention, by setting the frequency of the high-frequency power to 50 MHz or more, the plasma generation pressure can be sufficiently lowered, so that the probability of particle generation is drastically reduced and a good deposited film is formed over the entire circumference of the cylindrical substrate. It is considered a thing.

  In the frequency region higher than 450 MHz, the uniformity of the film characteristics is different from the case of 450 MHz or less due to the lowering of the plasma uniformity. If there is a difference in the uniformity of such film characteristics, there will also be a difference in the stress of the film at the same time, and film peeling is likely to occur near the boundary. For this reason, image defects are likely to deteriorate. In the frequency region where the frequency is higher than 450 MHz, the power absorption in the vicinity of the power introduction means is large, and generation of electrons is most frequently performed here, so that plasma non-uniformity is likely to occur and the characteristics of the deposited film are uneven. Easy to connect. At frequencies of 450 MHz or less, extreme power absorption is unlikely to occur in the vicinity of the power introduction means, so that plasma uniformity and film property uniformity are enhanced.

  The matching box 104 used in the present invention can be suitably used in any configuration as long as the high frequency power source 103 and the load can be matched. In addition, as a method of taking the alignment, an automatically adjusted method is preferable in order to avoid complexity at the time of manufacturing, but even if manually adjusted, there is no influence on the effect of the present invention. . In addition, as for the position where the matching box 104 is disposed, there is no problem wherever the matching box 104 is disposed within the matching range, but the wiring box from the matching box 104 to the high-frequency power introducing means 102 is disposed as small as possible. This is desirable because it enables matching under a wide range of load conditions.

  The material of the dielectric member 101 (a) of the reaction vessel 101 used in the present invention is preferably a ceramic material, specifically, alumina, zirconia, mullite, cordierite, silicon carbide, boron nitride, nitride. It is preferable to use a material containing at least one of aluminum, silicon nitride, and the like because the deposited film has high adhesion and is effective for preventing the occurrence of spherical protrusions. Among these, alumina, boron nitride, and aluminum nitride are more preferable because they have excellent electrical characteristics such as dielectric loss tangent and insulation resistance, and have low absorption of high-frequency power.

  Further, when the electrophotographic photosensitive member is produced from the ease of processing, the shape of the dielectric member 101 (a) of the reaction vessel 101 is preferably a cylindrical shape, but an elliptical shape or a polygonal shape is used as necessary. The shape may be selected depending on the member to be manufactured.

  At least a part of the surface of the dielectric member 101 (a) of the reaction vessel 101 preferably has an arithmetic average roughness (Ra) in the range of 1 μm or more and 20 μm or less in order to increase the effect of reducing spherical protrusions. Further, Ra is set within the above range, and the average inclination angle (θa) is controlled to a range of 9 degrees to 20 degrees, or Ra is set within the above range, and at the same time, the average distance (S) between the local peaks is 30 μm. More preferably, it is in the range of 100 μm or less. Furthermore, by making Ra, θa, and S all within the above ranges, the image defect improvement effect becomes particularly remarkable.

  If the material of the upper lid 101 (b) of the reaction vessel 101 is a material such as copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, stainless steel, etc., it is electrically conductive and can conduct heat. It is preferable because it is good. A composite material composed of two or more of these materials is also preferably used.

  The cylindrical base 105 only needs to have a material according to the purpose of use. Of the materials, copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, and stainless steel are preferable because of their good electrical conductivity. Furthermore, a composite material composed of two or more of these materials is also desirable for improving heat resistance.

  The substrate heating heater 107 may be a heating element having a vacuum specification. Specifically, it is an electric resistance heating element such as a sheathed heater, a plate heater, a ceramic heater, or a carbon heater, and heat radiation such as a halogen lamp or an infrared lamp. Examples include a heating element using a heat exchange means using a lamp heating element, liquid, gas, or the like as a heating medium. As the surface material of the substrate heating heater 107, metals such as stainless steel, nickel, aluminum, and copper, ceramics, heat resistant polymer resins, and the like can be used.

  In the deposited film forming apparatus of the present invention, a cylindrical member having conductivity may be installed in the center of the discharge space surrounded by the cylindrical substrate as shown in FIG. By installing such a cylindrical member, it is possible to further reduce image defects. It is more preferable to use the cylindrical member in a grounded state.

  Formation of a deposited film using the deposited film forming apparatus of FIG. 1 is performed, for example, as follows.

  First, the cylindrical substrate 105 held by the substrate holder 106 is installed in the reaction vessel 101, and the inside of the reaction vessel 101 is exhausted through an exhaust port 109 by an exhaust device (not shown). Subsequently, the cylindrical base 105 is heated and controlled to a predetermined temperature by the heating element 107.

  When the cylindrical substrate 105 reaches a predetermined temperature, the source gas is introduced into the reaction vessel 101 through the source gas supply means 110. After confirming that the flow rate of the source gas is the set flow rate and that the pressure in the reaction vessel 101 is stable, the high-frequency power introduction means 102 installed on a plurality of arrangement circles from the high-frequency power source 103 via the matching box 104. A predetermined high-frequency power is supplied to Glow discharge occurs in the reaction vessel 101 by the supplied high frequency power, and the source gas is excited and dissociated to form a deposited film on the cylindrical substrate 105.

  After the formation of the desired film thickness, the supply of the high frequency power is stopped, and then the supply of the source gas is stopped to finish the formation of the deposited film. When forming a multi-layered deposited film, the same operation is repeated a plurality of times. In this case, in each layer, as described above, once the formation of one layer is completed, the discharge is once stopped completely, and after the setting is changed to the gas flow rate and pressure of the next layer, the discharge occurs again. The next layer may be formed, or a plurality of layers may be continuously formed by gradually changing the gas flow rate, pressure, and high-frequency power to the set values of the next layer within a certain period of time after the formation of one layer. It may be formed. In addition, it is preferable to sufficiently evacuate the residual gas in the reaction vessel 101 once between the layers, because there is no fear of contamination when different gas species are used between the layers.

  During the formation of the deposited film, the cylindrical substrate 105 may be rotated at a predetermined speed by the rotation mechanism 108 as necessary.

  By using the present invention, for example, an a-Si electrophotographic photosensitive member as shown in FIG. 5 can be formed.

  In the electrophotographic photosensitive member 500 shown in FIG. 5A, a photoconductive layer 502 having photoconductivity having a-Si containing a hydrogen atom or a halogen atom as a constituent element is provided on a support 501. .

  An electrophotographic photosensitive member 500 shown in FIG. 5B has a photoconductive layer 502 made of a-Si containing a hydrogen atom or a halogen atom as a constituent element on a support 501, and a-Si. A system (or amorphous carbon system) surface layer 503 is provided.

  An electrophotographic photoreceptor 500 shown in FIG. 5C is formed of a-Si based charge injection blocking layer 504 and a-Si containing hydrogen atoms or halogen atoms as constituent elements on a support 501 and is photoconductive. And an a-Si (or amorphous carbon) surface layer 503 are provided.

  In the electrophotographic photosensitive member 500 shown in FIG. 5D, a photoconductive layer 502 is provided on a support 501. The photoconductive layer 502 includes a charge generation layer 505 and a charge transport layer 506 made of a-Si containing hydrogen atoms or halogen atoms as constituent elements, and an a-Si (or amorphous carbon) surface layer 503 thereon. Is provided.

EXAMPLES Hereinafter, although an Example demonstrates this invention in more detail, this invention is not restrict | limited at all by these.
(Example 1)
Using the deposited film forming apparatus shown in FIG. 1, the above-mentioned deposited film formation is performed on an aluminum cylinder having a diameter of 80 mm and a length of 358 mm as the cylindrical substrate 105 according to the conditions shown in Table 1 with the oscillation frequency of the high frequency power supply 103 set to 50 MHz. An electrophotographic photosensitive member comprising an a-Si deposited film was prepared by this method. In this apparatus, the distance between each high frequency power introducing means 102 and the closest cylindrical base 105 is set to be equal for all the high frequency power introducing means.

（比較例１）
図３に示す従来堆積膜形成装置を用い、実施例１と同様にして表１の条件でａ−Ｓｉ感光体の形成を行った。成膜条件は実施例１と全く同様とした。

(Comparative Example 1)
Using the conventional deposited film forming apparatus shown in FIG. 3, an a-Si photosensitive member was formed under the conditions shown in Table 1 in the same manner as in Example 1. The film forming conditions were exactly the same as in Example 1.

The a-Si electrophotographic photosensitive member prepared in Example 1 and Comparative Example 1 was evaluated by the following method.
(With reaction vessel membrane)
The adhesion state of the deposited film deposited on the inner surface of the reaction vessel after film formation was examined by the following method.

  First, the cellophane tape was firmly attached to the inner surface of the reaction vessel, then the cellophane tape was slowly peeled off, and the amount of the film adhering to the tape was evaluated by measuring the permeation concentration. The higher the concentration, the easier the film is peeled off. In the evaluation, sampling was performed at five positions between the cylindrical substrate facing surface and the cylindrical substrate, and the results were averaged.

The obtained results were ranked with the density value in Comparative Example 1 as 100%.
◎… Less than 70% ○ to ◎… 70% or more, less than 80% ○… 80% or more, less than 90% Δ to ○… 90% or more, less than 100% Δ… Same as Comparative Example 1 × From Comparative Example 1 Deterioration (number of spherical protrusions)
The surface of the obtained photoreceptor was observed with an optical microscope. Then, the number of spherical protrusions having a size of 20 μm or more was counted, and the number per 10 cm ² was examined.

The obtained results were ranked by relative comparison when the value in Comparative Example 1 was 100%.
◎ ... Less than 30% ○ ~ ◎ ... 30% or more and less than 50% ○ ... 50% or more and less than 70% Δ ~ ○ ... 70% or more and less than 100% Δ ... No change from Comparative Example 1 x ... worse than Comparative Example 1 (image) defect)
The electrophotographic photosensitive member produced in this example is installed in a Canon copying machine iR5000 modified for this test, the process speed is 265 mm / sec, the pre-exposure (LED with a wavelength of 660 nm), the light quantity of 4 lx · s, the current of the main charger. An image was formed under the condition of a value of 1000 μA, and an A3 size black original was copied. The images thus obtained were observed, and the number of white spots caused by spherical protrusions having a diameter of 0.3 mm or more was counted.

The obtained results were ranked by relative comparison when the value in Comparative Example 1 was 100%.
◎ ... Less than 30% ○ ~ ◎ ... 30% or more and less than 50% ○ ... 50% or more and less than 70% Δ ~ ○ ... 70% or more and less than 100% Δ ... No change from Comparative Example 1 x ... worse than Comparative Example 1 (charging) Noh)
A constant current (for example, 1000 μA) was passed through the main charger of the electrophotographic apparatus, and the dark portion potential was measured with a potential sensor of a surface potentiometer (Model 344, TREK) set at the position of the developer. Therefore, the larger the dark part potential, the better the charging ability. The evaluation results of the charging ability were ranked by relative comparison when the result of Comparative Example 1 was set to 100%.
◎… greater than 120% ○ to ◎… greater than 115%, 120% or less ○… greater than 110%, 115% or less Δ to ○… greater than 100%, 110% or less Δ… unchanged from Comparative Example 1 ×… Worse than Comparative Example 1 (ghost)
After adjusting the current value of the main charger so that the dark portion potential at the developing unit position becomes a predetermined value, the image exposure light amount is adjusted so that the bright portion potential when the predetermined white paper is used as a document has a predetermined value. . In this state, a Canon ghost test chart (part number: FY9-9040) with a reflection density of 1.1 and a black circle of 5 mm in diameter is placed on the document table, and a Canon halftone chart is placed on top of it. In the copy image, the difference between the reflection density of the black circle having a diameter of 5 mm and the reflection density of the halftone portion of the ghost chart recognized on the halftone copy was measured. Therefore, the smaller the value, the better. The ghost evaluation results were ranked by relative comparison with the result of Comparative Example 1 being 100%.
◎ ... Less than 70% ○ ~ ◎ ... 70% or more and less than 80% ○ ... 80% or more and less than 90% Δ ~ ○ ... 90% or more and less than 100% Δ ... Same as Comparative Example 1 × ... worse than Comparative Example 1 Examples 1 and Table 2 show the evaluation results of Comparative Example 1. As can be seen from Table 2, it can be seen that the use of the deposited film forming apparatus of the present invention significantly improves the peeling, spherical protrusion, and image defect. Moreover, although it is an unexpected effect, the characteristics of the electrophotographic photosensitive member such as charging ability, sensitivity, and optical memory are also improved. This is because the high-frequency power introduction means is arranged on a plurality of arrangement circles so that the high-frequency power introduction means and the cylindrical base are uniform, and the plasma state around the cylindrical base is made uniform. Presumed to be giving.

（実施例２）
図２（ａ）に示す堆積膜形成装置を用い、円筒状基体１０５としての直径８０ｍｍ、長さ３５８ｍｍのアルミニウムシリンダー上に、高周波電源の発振周波数を１０５ＭＨｚとして表３に示す条件に従い、前述の堆積膜形成方法でａ−Ｓｉ堆積膜から成る電子写真感光体を形成した。図２（ａ）の堆積膜形成装置には、円筒状基体１０５の対向面に１本、円筒状基体間に２本の高周波電力導入手段１０２を設けた。従って、合計で円筒状基体の３倍の高周波電力導入手段が設置されている。この装置では、円筒状基体の対向面に設置された高周波電力導入手段より、円筒状基体間の高周波電力導入手段の方が、若干、円筒状基体に近い構成となっている。

(Example 2)
Using the deposited film forming apparatus shown in FIG. 2A, on the aluminum cylinder having a diameter of 80 mm and a length of 358 mm as the cylindrical substrate 105, the above-mentioned deposition is performed according to the conditions shown in Table 3 with the oscillation frequency of the high frequency power source set to 105 MHz. An electrophotographic photosensitive member made of an a-Si deposited film was formed by a film forming method. In the deposited film forming apparatus of FIG. 2A, one high-frequency power introducing means 102 is provided on the opposite surface of the cylindrical substrate 105 and two between the cylindrical substrates. Therefore, a high-frequency power introducing means that is three times as much as the cylindrical base in total is installed. In this apparatus, the high-frequency power introducing means between the cylindrical substrates is slightly closer to the cylindrical substrate than the high-frequency power introducing means installed on the opposite surface of the cylindrical substrate.

上記の方法で得られた電子写真感光体は、実施例１と同様の評価を行った。結果を表４に示す。表４からわかるように、円筒状基体に対して、高周波電力導入手段が３倍ある堆積膜形成装置は本発明の効果をさらに得ることができることが判明した。

The electrophotographic photosensitive member obtained by the above method was evaluated in the same manner as in Example 1. The results are shown in Table 4. As can be seen from Table 4, it was found that the deposited film forming apparatus having three times the high-frequency power introducing means with respect to the cylindrical substrate can further obtain the effects of the present invention.

（実施例３）
図２（ｂ）に示す堆積膜形成装置を用い、円筒状基体１０５としての直径８０ｍｍ、長さ３５８ｍｍのアルミニウムシリンダー上に、高周波電源の発振周波数を１０５ＭＨｚと６０MHzの重畳周波数として、表５に示す条件に従い、前述の堆積膜形成方法でａ−Ｓｉ堆積膜から成る電子写真感光体を形成した。図２（ｂ）の堆積膜形成装置には、円筒状基体１０５の対向面に２本、円筒状基体の間に１本の高周波電力導入手段１０２を設けた。従って、合計で円筒状基体の３倍の高周波電力導入手段が設置されている。この装置では、それぞれの高周波電力導入手段と最近接の円筒状基体との距離は全ての高周波電力導入手段で等しくなるように設置してある。

(Example 3)
Using the deposited film forming apparatus shown in FIG. 2 (b), Table 5 shows the oscillation frequency of the high-frequency power source as a superimposed frequency of 105 MHz and 60 MHz on an aluminum cylinder having a diameter of 80 mm and a length of 358 mm as the cylindrical substrate 105. According to the conditions, an electrophotographic photosensitive member made of an a-Si deposited film was formed by the above-described deposited film forming method. In the deposited film forming apparatus of FIG. 2B, two high-frequency power introducing means 102 are provided on the opposing surface of the cylindrical substrate 105, and one high-frequency power introducing means 102 is provided between the cylindrical substrates. Therefore, a high-frequency power introducing means that is three times as much as the cylindrical base in total is installed. In this apparatus, the distance between each high frequency power introducing means and the closest cylindrical base is set to be equal for all the high frequency power introducing means.

上記の方法で得られた電子写真感光体は、実施例１と同様の評価を行った。結果を表６に示す。表６からわかるように、円筒状基体に対して、高周波電力導入手段を３倍にし、かつ、両者の距離を等しくした堆積膜形成装置では、本発明の効果をさらに得ることができることが判明した。

The electrophotographic photosensitive member obtained by the above method was evaluated in the same manner as in Example 1. The results are shown in Table 6. As can be seen from Table 6, it was found that the effect of the present invention can be further obtained in the deposited film forming apparatus in which the high-frequency power introducing means is tripled with respect to the cylindrical substrate and the distance between the two is equal. .

（実施例４）
図２（ａ）に示す堆積膜形成装置を用い、円筒状基体１０５としての直径８０ｍｍ、長さ３５８ｍｍのアルミニウムシリンダー上に、表７に示す条件に従い、前述の堆積膜形成方法でａ−Ｓｉ堆積膜から成る電子写真感光体を形成した。

Example 4
Using the deposited film forming apparatus shown in FIG. 2 (a), a-Si is deposited on the aluminum cylinder having a diameter of 80 mm and a length of 358 mm as the cylindrical substrate 105 according to the conditions shown in Table 7 by the aforementioned deposited film forming method. An electrophotographic photosensitive member comprising a film was formed.

  In the present embodiment, different high frequency power supplies are connected to the inner peripheral high frequency power introducing means 102 (a) and the outer peripheral high frequency power introducing means 102 (b), and the power is controlled independently. The oscillation frequency of each high frequency power source was 150 MHz.

上記の方法で得られた電子写真感光体は、実施例１と同様の評価を行った。結果を表８に示す。表８からわかるように、内周高周波電力導入手段、外周高周波電力導入手段それぞれに独立した高周波電源を接続することで、印加する電力をよりきめ細かく制御することが可能となり、本発明の効果はより一層得られることが判明した。また、電子写真感光体の品質管理が容易になるというメリットもあった。

The electrophotographic photosensitive member obtained by the above method was evaluated in the same manner as in Example 1. The results are shown in Table 8. As can be seen from Table 8, by connecting independent high-frequency power sources to the inner peripheral high-frequency power introducing means and the outer peripheral high-frequency power introducing means, it becomes possible to control the applied power more finely, and the effect of the present invention is further improved. It was found that more can be obtained. In addition, there is a merit that quality control of the electrophotographic photosensitive member becomes easy.

（実施例５）
図２（ａ）に示す堆積膜形成装置を用い、円筒状基体１０５としての直径８０ｍｍ、長さ３５８ｍｍのアルミニウムシリンダー上に、表９に示す条件に従い、前述の堆積膜形成方法でａ−Ｓｉ堆積膜から成る電子写真感光体を形成した。

(Example 5)
Using the deposited film forming apparatus shown in FIG. 2 (a), a-Si deposition is performed on the aluminum cylinder having a diameter of 80 mm and a length of 358 mm as the cylindrical substrate 105 according to the conditions shown in Table 9 by the aforementioned deposited film forming method. An electrophotographic photosensitive member comprising a film was formed.

  In the present embodiment, different high frequency power supplies are connected to the inner peripheral high frequency power introducing means 102 (a) and the outer peripheral high frequency power introducing means 102 (b), and the power is controlled independently. The oscillation frequency of each high frequency power source was 50 MHz applied to the inner peripheral high frequency power introducing means 102 (a) and 100 MHz applied to the outer peripheral high frequency power introducing means 102 (b).

上記の方法で得られた電子写真感光体は、実施例１と同様の評価を行った。結果を表10に示す。表10からわかるように、内周高周波電力導入手段、外周高周波電力導入手段それぞれに独立した高周波電源を接続し、異なる発振周波数の高周波電力を印加することで、本発明の効果はより一層得られることが判明した。また、電子写真感光体の品質管理が容易になるというメリットもあった。

The electrophotographic photosensitive member obtained by the above method was evaluated in the same manner as in Example 1. The results are shown in Table 10. As can be seen from Table 10, the effect of the present invention can be further obtained by connecting independent high frequency power sources to the inner peripheral high frequency power introducing means and the outer peripheral high frequency power introducing means and applying high frequency power having different oscillation frequencies. It has been found. In addition, there is a merit that quality control of the electrophotographic photosensitive member becomes easy.

（実施例６）
図６に示す堆積膜形成装置を用い、円筒状基体６０５としての直径８０ｍｍ、長さ３５８ｍｍのアルミニウムシリンダー上に、表１１に示す条件に従い、前述の堆積膜形成方法でａ−Ｓｉ堆積膜から成る電子写真感光体を形成した。高周波電源６０３は1台とし、高周波電力分岐手段６１２を用いて各々の高周波電力導入手段６０２に分配した。高周波電源の発振周波数は４００ＭＨｚとした。この装置では、それぞれの高周波電力導入手段と最近接の円筒状基体との距離は全ての高周波電力導入手段で等しくなるように設置してある。

(Example 6)
The deposited film forming apparatus shown in FIG. 6 is used to form an a-Si deposited film on an aluminum cylinder having a diameter of 80 mm and a length of 358 mm as a cylindrical substrate 605 according to the above-described deposited film forming method according to the conditions shown in Table 11. An electrophotographic photoreceptor was formed. One high-frequency power source 603 was provided and distributed to each high-frequency power introducing unit 602 using a high-frequency power branching unit 612. The oscillation frequency of the high frequency power source was 400 MHz. In this apparatus, the distance between each high frequency power introducing means and the closest cylindrical base is set to be equal for all the high frequency power introducing means.

In this embodiment, a stainless steel cylindrical member 613 is installed at the center of the discharge space surrounded by the cylindrical member. The diameter of the cylindrical member 613 was 0.25 times the diameter of the region surrounded by the cylindrical substrate, and the length was 0.95 times the height of the reaction vessel. The cylindrical member is dropped to the ground via an exhaust mesh installed at the exhaust port 509.

上記の方法で得られた電子写真感光体は、実施例１と同様の評価を行った。結果を表１２に示す。表１２からわかるように、放電空間中央に円筒状部材をアースに落とした状態で設置することで、本発明の効果と相まって、さらに画像欠陥を低減することが出来ることが判明した。

The electrophotographic photosensitive member obtained by the above method was evaluated in the same manner as in Example 1. The results are shown in Table 12. As can be seen from Table 12, it was found that image defects can be further reduced by installing the cylindrical member in the center of the discharge space in a state where it is grounded, coupled with the effects of the present invention.

It is the typical block diagram which showed an example of the deposited film formation apparatus of this invention. It is the typical block diagram which showed an example of the cross-sectional view of the deposited film formation apparatus of this invention. It is the typical block diagram which showed an example of the manufacturing apparatus of the electrophotographic photoreceptor by the VHF plasma CVD method using the frequency of the conventional VHF band. It is the typical block diagram which showed an example of the deposited film formation apparatus of this invention. FIG. 3 is a diagram illustrating an example of a layer configuration of an electrophotographic photosensitive member that can be formed according to the present invention. It is the typical block diagram which showed another example of the deposited film formation apparatus of this invention.

Explanation of symbols

101, 301 Reaction vessel 101 (a), 301 (a), 601 (a) Dielectric member 101 (b), 301 (b), 601 (b) Upper lid 102, 302, 602 High-frequency power introducing means 103, 303, 603 High-frequency power source 104, 304, 604 Matching box 105, 305, 605 Cylindrical base 106, 306, 606 Base support 107, 307, 607 Substrate heating heater 108, 308, 608 Rotating mechanism 109, 309, 609 Exhaust piping 110 , 310, 610 Gas supply means 112, 312, 612 High frequency power branching means 500 Electrophotographic photoreceptor 501 Support body 502 Photoconductive layer 503 Surface layer 504 Charge injection blocking layer 505 Charge generation layer 506 Charge transport layer 613 Cylindrical member

Claims (19)

  A reaction vessel capable of being depressurized, at least a part of which is made of a dielectric member, a plurality of cylindrical substrates disposed on the same circumference inside the reaction vessel, a raw material gas introduction means, and an outside of the reaction vessel A plurality of high-frequency power introducing means arranged, applying a high-frequency power to the high-frequency power introducing means, and generating a glow discharge in the reaction vessel, the raw material gas introduced into the reaction vessel is In a deposited film forming apparatus that decomposes and forms deposited films on the plurality of cylindrical substrates, the high-frequency power introducing means is disposed on a plurality of arrangement circles having different diameters.   2. The deposited film forming apparatus according to claim 1, wherein the high-frequency power introducing means is provided in an integral multiple of the number of the cylindrical substrates.   3. The deposited film forming apparatus according to claim 1, wherein the high-frequency power introducing means is provided at least twice as many as the number of the cylindrical substrates.   3. The deposited film forming apparatus according to claim 1, wherein the high-frequency power introducing means is provided at least three times the number of the cylindrical substrates.   The high-frequency power introducing means arranged on at least one arrangement circle is generally arranged at a position opposed to the cylindrical substrate, and the high-frequency power introducing means arranged on another arrangement circle is arranged on the cylindrical substrate. The deposited film forming apparatus according to claim 1, wherein the deposited film forming apparatus is disposed between them.   The diameter of the arrangement circle of the high-frequency power introduction means arranged between the cylindrical base bodies is smaller than the diameter of the arrangement circle of the high-frequency power introduction means arranged at a position facing the cylindrical base body. The deposited film forming apparatus according to claim 5.   2. The high-frequency power introducing means and the cylindrical base closest to the high-frequency power introducing means are arranged so that the distance between all the high-frequency power introducing means is substantially equal. 6. The deposited film forming apparatus according to 6.   8. The deposited film forming apparatus according to claim 1, wherein high-frequency power is applied from the same high-frequency power source to the high-frequency power introducing means arranged on a plurality of arrangement circles.   8. The deposited film forming apparatus according to claim 1, wherein an independent high-frequency power source is provided for each of a plurality of arrangement circles where the high-frequency power introducing means is arranged.   The deposited film forming apparatus according to claim 9, wherein high-frequency power applied to the high-frequency power introducing unit is different for each independent high-frequency power source.   11. The deposited film forming apparatus according to claim 9, wherein an oscillation frequency of the high frequency power applied to the high frequency power introducing means is different for each independent high frequency power source.   12. The deposited film forming apparatus according to claim 1, further comprising a cylindrical member having conductivity in an arrangement circle in which the cylindrical substrate is arranged.   13. The deposited film forming apparatus according to claim 12, wherein the cylindrical member is installed at a substantially center of an arrangement circle of the cylindrical substrate.   14. The deposited film forming apparatus according to claim 12, wherein the cylindrical member is grounded.   15. The deposited film forming apparatus according to claim 1, wherein a frequency of the high frequency power is in a range of 50 to 450 MHz.   16. The deposited film forming apparatus according to claim 1, wherein two or more different frequencies having a frequency of the high-frequency power in a range of 50 to 450 MHz are superimposed.   17. The deposited film forming apparatus according to claim 1, wherein the deposited film formed on the plurality of cylindrical substrates is a non-single crystal material having a silicon atom as a base material.   18. The deposited film forming apparatus according to claim 1, wherein the deposited film forming apparatus is used for manufacturing an electrophotographic photosensitive member.   19. A deposited film forming method comprising forming a deposited film using the deposited film forming apparatus according to claim 1.

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