JPH0565590B2 - - Google Patents
Info
- Publication number
- JPH0565590B2 JPH0565590B2 JP59138334A JP13833484A JPH0565590B2 JP H0565590 B2 JPH0565590 B2 JP H0565590B2 JP 59138334 A JP59138334 A JP 59138334A JP 13833484 A JP13833484 A JP 13833484A JP H0565590 B2 JPH0565590 B2 JP H0565590B2
- Authority
- JP
- Japan
- Prior art keywords
- gas supply
- gas
- electrode
- discharge
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 23
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 19
- 239000002994 raw material Substances 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 37
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 230000002159 abnormal effect Effects 0.000 description 7
- 230000005856 abnormality Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、円筒状基体上に成膜するためのプラ
ズマCVD装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a plasma CVD apparatus for forming a film on a cylindrical substrate.
（従来技術）
プラズマCVD技術は、薄膜を比較的低温で成
長できることを特長とする成膜技術である。プラ
ズマCVD技術において、たとえば高周波放電に
より反応ガスを放電プラズマ状態におくことによ
り、反応ガスの化学結合は低温で分解され、活性
化された粒子が作り出され、そして、この活性化
された粒子間の反応によりCVD膜が形成される。
プラズマCVD膜の性質は、多数の因子に影響を
受ける。この因子には、生成温度、生成ガス比、
生成圧力、電極構造、反応容器構造、排気速度、
生成RFパワー、RF周波数、プラズマ発生方式等
がある。したがつて、プラズマCVD膜の成膜の
ためには、多くの因子を制御せねばならない。(Prior Art) Plasma CVD technology is a film-forming technology characterized by the ability to grow thin films at relatively low temperatures. In plasma CVD technology, for example, by placing a reactive gas in a discharge plasma state using high-frequency discharge, the chemical bonds of the reactive gas are decomposed at low temperatures, creating activated particles, and the interaction between these activated particles is The reaction forms a CVD film.
The properties of plasma CVD films are influenced by numerous factors. These factors include production temperature, production gas ratio,
Generation pressure, electrode structure, reaction vessel structure, pumping speed,
There are generation RF power, RF frequency, plasma generation method, etc. Therefore, many factors must be controlled in order to form a plasma CVD film.
プラズマCVD技術は、種々の物質の成膜に利
用されていて、たとえば非晶質シリコン（ａ−
Si）を成膜することもできる。ａ−Siは、電子写
真用感光体としても適している。電子写真用感光
体として使用する場合、ａ−Si膜は、大面積の円
筒状基体上に、比較的厚く（20〜50μｍ）、且つ、
均一に成膜されねばならない。 Plasma CVD technology is used to form films of various materials, such as amorphous silicon (a-
It is also possible to form a film of Si). a-Si is also suitable as an electrophotographic photoreceptor. When used as an electrophotographic photoreceptor, the a-Si film is relatively thick (20 to 50 μm) and coated on a large area cylindrical substrate.
The film must be formed uniformly.
第４図は、従来のａ−Si用プラズマCVD装置
の一例を図式的に示す。アルミニウム円筒からな
る基体１は、そ軸の周りに回転可能に、円筒状の
電極２の内部に設けられる。電極２は、この基体
１と軸を共通に配置された二枚の円筒板２ａ，２
ｂからなり、ガス室３がこの二枚の円筒板２ａ，
２ｂにより区画される。外側の円筒板２ａには、
図示しないガス供給装置から原料ガスを導入する
ための導入口４が設けられ、一方、内側の円筒板
２ｂには、この円筒板２ｂの内部の空間（放電領
域）に原料ガスを導入するための図示しない多数
の小さなガス供給穴が設けられる。基体１と電極
２とは、チヤンバー５内に設置される。チヤンバ
ー５内に上記のガス供給穴から導入されるガス
は、チヤンバー５の下部から、排気口６を介して
真空ポンプ７により排気される。RF電源８は、
導入口４を介して電極２に接続され、一方、基体
１は、接地される。なお、図示しないが、ヒータ
ーは、それぞれ、基体１と電極２に取り付けら
れ、ヒーター用電源に接続される。 FIG. 4 schematically shows an example of a conventional a-Si plasma CVD apparatus. A base body 1 made of an aluminum cylinder is provided inside a cylindrical electrode 2 so as to be rotatable around its axis. The electrode 2 is made up of two cylindrical plates 2a, 2 that share an axis with the base 1.
b, and the gas chamber 3 consists of these two cylindrical plates 2a,
2b. On the outer cylindrical plate 2a,
An inlet 4 for introducing raw material gas from a gas supply device (not shown) is provided in the inner cylindrical plate 2b, and an inlet 4 for introducing raw material gas into the internal space (discharge area) of this cylindrical plate 2b is provided. A number of small gas supply holes (not shown) are provided. The base 1 and the electrode 2 are placed within the chamber 5. The gas introduced into the chamber 5 from the gas supply hole described above is exhausted from the lower part of the chamber 5 via the exhaust port 6 by the vacuum pump 7. The RF power supply 8 is
It is connected to the electrode 2 via the inlet 4, while the base 1 is grounded. Although not shown, the heaters are attached to the base 1 and the electrode 2, respectively, and connected to a heater power source.
第５図は、従来のａ−Si用プラズマCVD装置
の他の例を図式的に示す。第４図に示した装置と
の第一の相違は、電極２がチヤンバー５の一部に
なつていることである。チヤンバー５は、電極
２、上部５ａ、下部５ｂとからなり、下部５ｂは
電極２に対して絶縁されている。第二の相違は、
電極２の上側の側壁が円板状であり、放電領域に
面する部分に、多数の小さなガス供給穴が一様に
設けられていることである。第三の相違は、チヤ
ンバーの上部５ａと側壁２ｃとが一つの室３ａを
区画し、導入口４が上部５ａに取り付けられてい
ることである。原料ガスは、第５図に矢印で示す
ように、まず、ガス室３ａに導入され、次いで、
一部は直接に、大部分は、ガス室３を経て間接的
に、放電領域に流れる。 FIG. 5 schematically shows another example of a conventional a-Si plasma CVD apparatus. The first difference with the device shown in FIG. 4 is that the electrode 2 is now part of the chamber 5. The chamber 5 consists of an electrode 2, an upper part 5a, and a lower part 5b, and the lower part 5b is insulated from the electrode 2. The second difference is
The upper side wall of the electrode 2 is disk-shaped, and a large number of small gas supply holes are uniformly provided in the portion facing the discharge area. The third difference is that the upper part 5a of the chamber and the side wall 2c define one chamber 3a, and the inlet 4 is attached to the upper part 5a. The raw material gas is first introduced into the gas chamber 3a as shown by the arrow in FIG.
A portion flows directly and a large portion indirectly via the gas chamber 3 into the discharge region.
第６図は、従来のａ−Si用プラズマCVD装置
の他の例を示す。４個のアルミニウム円筒からな
る基体１，１，…が、その軸の周りに回転可能な
ように、その軸を平行にして一列に配置される。
この一列の基体１，１，…に両側に平板状の電極
２，２が配置される。この電極２は、外壁２ａと
内壁２ｂとからなり、外壁２ａと内壁２ｂとの間
にガス室３を区画する。外壁２ａには、ガスを外
部から導入するための導入口４が設けられ、一
方、内壁２ｂには、この内壁２ｂと基体１との間
の空間（放電領域）に原料ガスを供給するための
図示しない多数の小さなガス供給穴が設けられ
る。図において、矢印は、この原料ガスを通して
のガスの供給を示す。基体１，１，…と電極２，
２とは、チヤンバー５内に設置される。上記のガ
ス供給穴から放電領域内に導入されるガスは、チ
ヤンバー５に設た排気口６から、図示しない真空
ポンプ７によつて排気され、所定の圧力に保たれ
る。RF電源８は、導入口４，４を介して、電極
２に接続され、一方、基体１，１，…は接地され
る。なお、図示しないが、ヒーターが基体１，
１，…と電極２，２とに取り付けられる。 FIG. 6 shows another example of a conventional a-Si plasma CVD apparatus. Base bodies 1, 1, . . . consisting of four aluminum cylinders are arranged in a row with their axes parallel to each other so as to be rotatable around their axes.
Flat electrodes 2, 2 are arranged on both sides of this row of substrates 1, 1, . This electrode 2 consists of an outer wall 2a and an inner wall 2b, and defines a gas chamber 3 between the outer wall 2a and the inner wall 2b. The outer wall 2a is provided with an inlet 4 for introducing gas from the outside, while the inner wall 2b is provided with an inlet 4 for supplying source gas to the space (discharge area) between the inner wall 2b and the base 1. A number of small gas supply holes (not shown) are provided. In the figure, arrows indicate the supply of gas through this source gas. Substrate 1, 1, ... and electrode 2,
2 is installed within the chamber 5. The gas introduced into the discharge region through the gas supply hole is exhausted from an exhaust port 6 provided in the chamber 5 by a vacuum pump 7 (not shown) and maintained at a predetermined pressure. The RF power source 8 is connected to the electrode 2 via the inlets 4, 4, while the bases 1, 1, . . . are grounded. Although not shown, the heater is connected to the base 1,
1,... and electrodes 2, 2.
プラズマCVDにおるａ−Siの成膜は、次のよ
うに行われる。パツシエン則から、自続放電開始
電圧は、電極２と基体１との間隔ｄと基体の圧力
ｐとの積pdに依存して変化する。従来は、この
間隔ｄは、基体の圧力が1Torr近傍では、自続放
電開始電圧がほぼ最小になる30〜50mmの範囲内で
選定されていて、通常は、40mm程度が選ばれて
る。この領域では、放電の安定性と基体へのガス
の均一な供給とが得られやすいという長所があ
る。シラン等の原料ガスは、ガス室３から円筒板
２ｂに設けられた多数のガス供給穴を経て、第４
に矢印で示すように、電極２と基体１との間の空
間内に導入される。チヤンバー内の圧力は、0.1
〜数Torrに保たれる。基体１は、成膜の均一性
を保つために、10〜30rpmで回転される。基体１
の温度は、150〜300℃に加熱される。電極２と電
極（基体）１との間にRF電圧を印加すると、グ
ロー放電が生じ、原料ガスは分解され、ａ−Si膜
が、基体１上に成膜される。 A-Si film formation by plasma CVD is performed as follows. According to Patsien's law, the self-sustaining discharge starting voltage changes depending on the product pd of the distance d between the electrode 2 and the substrate 1 and the pressure p of the substrate. Conventionally, this distance d has been selected within the range of 30 to 50 mm, where the self-sustaining discharge starting voltage is almost at a minimum when the base pressure is around 1 Torr, and usually about 40 mm is selected. This region has the advantage that it is easy to obtain stability of discharge and uniform supply of gas to the substrate. Raw material gas such as silane is supplied from the gas chamber 3 through a large number of gas supply holes provided in the cylindrical plate 2b, and then passes through the fourth
It is introduced into the space between the electrode 2 and the base 1 as shown by the arrow in FIG. The pressure inside the chamber is 0.1
~Kept at a few Torr. The substrate 1 is rotated at 10 to 30 rpm to maintain uniformity of film formation. Base 1
The temperature is heated to 150-300℃. When an RF voltage is applied between the electrode 2 and the electrode (substrate) 1, a glow discharge occurs, the source gas is decomposed, and an a-Si film is formed on the substrate 1.
（発明により解決すべき問題点）
膜厚の均一なプラズマCVD膜を得る手段とし
ては、第４図〜第６図に示したプラズマCVD装
置におけるように、ガス室に設けた多数の小径の
ガス供給穴から基体へ原料ガス吹きつける方法が
最良である。(Problems to be Solved by the Invention) As a means of obtaining a plasma CVD film with a uniform film thickness, as in the plasma CVD apparatus shown in Figs. 4 to 6, a large number of small diameter gas The best method is to blow the raw material gas from the supply hole onto the substrate.
成膜速度を高くする必要があるときは、原料ガ
スの供給量を増加させねばならない。このため、
ガス供給穴の径を大きくするか、あるいは、数を
増す必要がある。 When it is necessary to increase the film formation rate, the amount of raw material gas supplied must be increased. For this reason,
It is necessary to increase the diameter or number of gas supply holes.
ガス供給穴の径を大きくすると、穴の周辺で放
電が乱れる。このため、穴の周辺で膜の剥離や微
粉（（SiH2）ｎ）の発生が生じ、基体上の成膜中
にとりこまれ、膜質を悪化させる。その結果、電
子写真におけるドラムのノイズ（白斑点としてで
るピンホール等の異常点）の原因の一つとなる。
また、ガス供給穴からの原料ガスの流速が大きい
と、乱流が生じ、チヤンバー内のダストを舞い上
げる等の好ましくない影響を与える。そこで、ガ
ス供給穴の径を放電を乱さない大きさにし、ガス
供給穴の数を、ガス室内の圧力がチヤンバー内の
圧力よりも少し高い程度にし、原料ガスの流速を
ゆるやかにすることが好ましいと考えられる。 When the diameter of the gas supply hole is increased, the discharge becomes disordered around the hole. For this reason, peeling of the film and generation of fine powder ((SiH 2 )n) occur around the holes, which is incorporated during film formation on the substrate and deteriorates the film quality. As a result, this becomes one of the causes of drum noise (abnormal points such as pinholes that appear as white spots) in electrophotography.
Furthermore, if the flow rate of the raw material gas from the gas supply hole is high, turbulence will occur, which will have undesirable effects such as kicking up dust within the chamber. Therefore, it is preferable to set the diameter of the gas supply hole to a size that does not disturb the discharge, set the number of gas supply holes to such an extent that the pressure inside the gas chamber is slightly higher than the pressure inside the chamber, and make the flow rate of the source gas gentle. it is conceivable that.
特開昭59−38377号公報に開示されたプラズマ
CVD装置においては、膜厚調整の目的で、ガス
供給穴にネジ穴加工を施し、ガス供給穴の径と分
布を調整できる。すなわち、ビスでガス供給穴を
塞ぐことができ、また、軸方向に開口したビスで
ガス供給穴を塞ぎ、穴径を小さくできる。ところ
で、この従来例は、膜厚調整の目的で、原料ガス
の供給を調整するものである。 Plasma disclosed in Japanese Patent Application Laid-Open No. 59-38377
In CVD equipment, the diameter and distribution of the gas supply holes can be adjusted by drilling screw holes in the gas supply holes for the purpose of adjusting the film thickness. That is, the gas supply hole can be closed with a screw, and the gas supply hole can be closed with a screw opened in the axial direction, thereby making it possible to reduce the hole diameter. By the way, in this conventional example, the supply of raw material gas is adjusted for the purpose of adjusting the film thickness.
本発明の目的は、放電異常を起さず且つ原料ガ
スをスムーズに供給できるガス供給穴を備えたプ
ラズマCVD装置を提供することである。 An object of the present invention is to provide a plasma CVD apparatus equipped with a gas supply hole that does not cause discharge abnormalities and can supply raw material gas smoothly.
（問題点を解決するための手段）
本発明に係るプラズマCVD装置は、真空槽と、
該真空槽内に配置された膜形成用の基体と、該基
体と所定の間隔をおいて配置され、原料ガスを供
給するためのガス室を形成する電極と、該電極に
形成され、内径２mm以下で且つ前記基体と対向す
る側の縁に曲面を有するか、もしくは面取り加工
されている多数のガス供給穴とを備え、該ガス供
給穴から原料ガスを前記基体に向けて放出しつ
つ、プラズマ放電によつて基体上に成膜すること
を特徴とする。(Means for solving the problems) A plasma CVD apparatus according to the present invention includes a vacuum chamber,
A substrate for film formation placed in the vacuum chamber, an electrode placed at a predetermined distance from the substrate and forming a gas chamber for supplying raw material gas, and an electrode formed on the electrode with an inner diameter of 2 mm. and a large number of gas supply holes having curved or chamfered edges on the side facing the base, and discharging raw material gas toward the base from the gas supply holes, while plasma It is characterized by forming a film on a substrate by electric discharge.
（作用）
ガス供給穴の内径を２mm以下とすることによ
り、ガス供給穴近傍でのプラズマ放電の異常がな
くなる。このため、成膜の均質性が向上する。ま
た、ガス供給穴近傍での膜の剥離や微粉の発生が
なくなり、これらが成膜の中に取り込まれること
により生じる膜質の悪化が防止される。(Function) By setting the inner diameter of the gas supply hole to 2 mm or less, abnormalities in plasma discharge near the gas supply hole are eliminated. Therefore, the uniformity of film formation is improved. Further, peeling of the film and generation of fine powder near the gas supply hole are eliminated, and deterioration of film quality caused by these being taken into the film formation is prevented.
（実施例）
第２図に示す装置で、放電条件とガス供給穴の
穴径との関係を調べた。この装置においては、チ
ヤンバー１１内に、ガス室１２を設けた電極１３
と基体１４とを対向して配置する。電極１３に
は、原料ガス導入用の導入口１５を設け、基体１
４に対向する側には、多数のガス供給穴１６，１
６，…を開口する。チヤンバー１１には、排気口
１７を設ける。RF電源１８を電極１３と基体１
４との間に接続する。いま、基体１４をヒーター
１９を内蔵した基体ホルダ２０を介して間接的に
加熱し、原料ガスをガス供給穴１６，１６，…か
ら供給し、高周波電界を印加すると、電極１３と
基体１４との間の点描で示す放電領域で、プラズ
マ放電が生じ、基体１４上にａ−Si膜が堆積す
る。(Example) Using the apparatus shown in FIG. 2, the relationship between discharge conditions and the hole diameter of the gas supply hole was investigated. In this device, an electrode 13 in which a gas chamber 12 is provided is provided in a chamber 11.
and the base body 14 are arranged to face each other. The electrode 13 is provided with an inlet 15 for introducing raw material gas, and the base 1
On the side opposite to 4, there are a number of gas supply holes 16, 1
6. Open... The chamber 11 is provided with an exhaust port 17. The RF power source 18 is connected to the electrode 13 and the base 1.
Connect between 4 and 4. Now, when the substrate 14 is indirectly heated via the substrate holder 20 with a built-in heater 19, raw material gas is supplied from the gas supply holes 16, 16, and a high-frequency electric field is applied, the contact between the electrode 13 and the substrate 14 is increased. Plasma discharge occurs in the discharge region indicated by dotted lines in between, and an a-Si film is deposited on the substrate 14.
プラズマCVDにおける放電異常の発生は、ガ
ス供給穴が異常に光ることで検知できる。本発明
者らは、放電条件とガス供給穴の寸法との関係を
種々調べたところ、異常の生じる程度が、同じガ
ス供給穴でも放電条件により異なり、また、同じ
放電条件でもガス供給穴の形状と寸法とにより異
なることを見出した。 The occurrence of discharge abnormality in plasma CVD can be detected by the abnormal glow of the gas supply hole. The present inventors investigated various relationships between discharge conditions and the dimensions of the gas supply hole, and found that the degree of abnormality that occurs varies depending on the discharge conditions even with the same gas supply hole.Also, even under the same discharge conditions, the shape of the gas supply hole It was found that there were differences depending on the size and dimensions.
はじめに、放電条件とガス供給穴の穴径との関
係について説明する。プラズマ放電においては、
放電領域において、電極１３と基体１４の近傍
に、それぞれイオンシース２１，２１が、そして
これに接して、明部２２，２２が生じる。（イオ
ンシースは、明部に比べ暗いので、ダークスペー
クとも呼ばれる。）イオンシース２１の幅をdiと
し、ガス供給穴１６の内径をφとしたとき、次に
説明するように、異常発光がφ＞2diのときに生
じることが見出された。 First, the relationship between discharge conditions and the hole diameter of the gas supply hole will be explained. In plasma discharge,
In the discharge region, ion sheaths 21 and 21 are formed near the electrode 13 and the base 14, respectively, and bright parts 22 and 22 are formed in contact with these. (Since the ion sheath is darker than the bright part, it is also called a dark spake.) When the width of the ion sheath 21 is d i and the inner diameter of the gas supply hole 16 is φ, the abnormal light emission is φ, as explained next. It was found that this occurs when >2d i .
第１図ａ，ｂ，ｃは、内径φを変化させたとき
のガス供給穴１６の近傍での放電状態の変化を、
それぞれ、φ〜diの場合、φ〜2diの場合、φ＞
2diの場合の放電状態を図式的に示す。内径φが
電極２側のイオンシース２１の幅diを越えると、
イオンシース２１の形が変りはじめる。さらに、
内径φが2diより大きくなると、明部２２が、ガ
ス供給穴１６の中に入り込み、ガス供給穴１６の
付近が異常に明るくなる。 Figures 1a, b, and c show changes in the discharge state near the gas supply hole 16 when the inner diameter φ is changed.
If φ~d i , φ~2d i , φ＞
The discharge state in the case of 2d i is schematically shown. When the inner diameter φ exceeds the width d i of the ion sheath 21 on the electrode 2 side,
The shape of the ion sheath 21 begins to change. moreover,
When the inner diameter φ becomes larger than 2d i , the bright portion 22 enters into the gas supply hole 16, and the vicinity of the gas supply hole 16 becomes abnormally bright.
電極２側のイオンシース２１の幅diは、RF周
波数が13.56MHz、RFパワーが0.1W／cm2のとき、
0.1Torrで約1.5mm、2.0Torrで約１mmである。成
膜は、通常、0.5〜1.5Torrで行うので、ガス供給
穴１６の内径φは、2.0mm以下にすれば、異常な
発光は生じない。 The width d i of the ion sheath 21 on the electrode 2 side is when the RF frequency is 13.56MHz and the RF power is 0.1W/cm 2 .
It is approximately 1.5 mm at 0.1 Torr and approximately 1 mm at 2.0 Torr. Since film formation is normally performed at 0.5 to 1.5 Torr, if the inner diameter φ of the gas supply hole 16 is set to 2.0 mm or less, no abnormal light emission will occur.
ところで、ガス供給穴１６の縁に突起がある
と、上記のφ＜2diの関係を満足していても、突
起部で電界が強くなり、異常発光が生じる。そこ
で、放電とガス供給穴１６の形状との関係につい
て研究した。第３図ａ〜ｅに示す５種の形状のガ
ス供給穴１６を加工した。これらの図において、
基体１４は、電極１３の右側に配置されている。
第３図ａは、基体１４側の縁に突起がある場合、
第３図ｂは、円形の開口を設けた場合、第３図ｃ
は、基体１４側の縁にＲをつけた場合、第３図ｄ
は、同じく基体１４側の縁にＲをつけ、且つ、穴
の深さを深くした場合、第３図ｅは、基体１４側
の縁に面取り加工を行つた場合である。各形状に
ついてのプラズマ放電時の性状評価は、第３図ａ
〜ｅの各図の下側の記号で示される。◎は良好、
○は可、×は付加を表わす。 By the way, if there is a protrusion on the edge of the gas supply hole 16, even if the above relationship φ<2d i is satisfied, the electric field will become stronger at the protrusion and abnormal light emission will occur. Therefore, we studied the relationship between discharge and the shape of the gas supply hole 16. Five types of gas supply holes 16 shown in FIGS. 3a to 3e were machined. In these figures,
The base body 14 is arranged on the right side of the electrode 13.
FIG. 3a shows that when there is a protrusion on the edge of the base 14,
Figure 3b shows the case where a circular opening is provided, and Figure 3c
If the edge on the base 14 side is rounded, the figure 3d
3 shows a case where the edge on the base 14 side is similarly rounded and the depth of the hole is increased, and FIG. 3e shows a case where the edge on the base 14 side is chamfered. The evaluation of the properties during plasma discharge for each shape is shown in Figure 3a.
Indicated by symbols at the bottom of each figure. ◎ is good,
○ indicates possible, × indicates addition.
第３図ｃ〜ｅに示す形状のガス供給穴１６、す
なわち、基体１４に対向する側の縁にＲ加工また
は面取り加工を施したガス供給穴１６は、放電異
常の抑制に効果的であることがわかつた。これ
は、基体１４側の穴開口縁に鋭いエツジがないの
で電気力線の歪みが小さくなるためと考えられ
る。また、ｃ〜ｅに示す形状のガス供給穴１６は
ａ，ｂに比べ、原料ガスの吹出しがよりゆるやか
になり、ストレスにより穴周辺の膜の剥離が減少
することから、より良好な成膜を得ることができ
る。 The gas supply holes 16 having the shapes shown in FIGS. 3c to 3e, that is, the gas supply holes 16 whose edges facing the base body 14 are rounded or chamfered, are effective in suppressing discharge abnormalities. I understood. This is thought to be because there are no sharp edges on the edge of the hole opening on the base 14 side, so the distortion of the lines of electric force is reduced. In addition, the gas supply holes 16 having the shapes shown in c to e blow out the raw material gas more slowly than those shown in holes a and b, and the peeling of the film around the holes due to stress is reduced, so that better film formation is possible. Obtainable.
第４図から第６図に示したプラズマCVD装置
において、ガス供給穴１６の穴径を２mmとし、第
３図ｃ〜ｅに示す形状に加工した。得られた成膜
の性質は良好であつた。 In the plasma CVD apparatus shown in FIGS. 4 to 6, the gas supply hole 16 had a hole diameter of 2 mm and was processed into the shape shown in FIGS. 3c to 3e. The properties of the resulting film were good.
（発明の効果）
ガス供給穴での異常な放電がなくなつたことに
より、膜の均質性が向上した。すなわち、(1)ガス
供給穴周辺での成膜性が良好になり、電極上の膜
の剥離に起因する膜質の悪化がなくなつた。(2)異
常放電域での微粉の発生がなくなり、これに起因
する膜質の悪化がなくなつた。(3)放電が安定で且
つ均一であり、成膜の性質の再現性が良好になつ
た。(Effect of the invention) The homogeneity of the film was improved by eliminating abnormal discharge at the gas supply hole. That is, (1) film formation properties around the gas supply holes were improved, and deterioration in film quality caused by peeling of the film on the electrodes was eliminated. (2) The generation of fine powder in the abnormal discharge area has been eliminated, and the deterioration of film quality caused by this has been eliminated. (3) The discharge was stable and uniform, and the reproducibility of the film formation properties was improved.
成膜の性質が良好になつた結果、電子写真にお
けるノイズが減少した。 As a result of improved film deposition properties, noise in electrophotography was reduced.
第１図ａ，ｂ，ｃは、それそれ、φ〜di、φ〜
2di、φ＞2diの場合のガス供給穴近傍での放電の
状態を図式的に示す断面説明図である。第２図
は、プラズマCVD装置の図式的な断面図である。
第３図ａ〜ｅは、それぞれ、ガス供給穴の形状を
示す断面説明図である。第４図〜第６図は、それ
ぞれ、従来のプラズアCVD装置の図式的な断面
説明図である。
１……基体、２……電極、３，３ａ……ガス
室、４……導入口、５……チヤンバー、６……排
気口、７……真空ポンプ、８……RF電源、１１
……チヤンバー、１２……ガス室、１３……電
極、１４……基体、１５……導入口、１６……ガ
ス供給穴、１７……排気口、１８……RF電源、
１９……ヒーター、２１，２１……イオンシー
ス、２２，２２……明部。
Figure 1 a, b, c are respectively φ~d i , φ~
2d i , φ>2d i is a cross-sectional explanatory diagram schematically showing the state of discharge near the gas supply hole. FIG. 2 is a schematic cross-sectional view of the plasma CVD apparatus.
FIGS. 3 a to 3 e are cross-sectional explanatory views showing the shapes of gas supply holes, respectively. FIGS. 4 to 6 are schematic cross-sectional views of conventional plasma CVD apparatuses, respectively. 1... Base, 2... Electrode, 3, 3a... Gas chamber, 4... Inlet, 5... Chamber, 6... Exhaust port, 7... Vacuum pump, 8... RF power supply, 11
... Chamber, 12 ... Gas chamber, 13 ... Electrode, 14 ... Base, 15 ... Inlet, 16 ... Gas supply hole, 17 ... Exhaust port, 18 ... RF power supply,
19... Heater, 21, 21... Ion sheath, 22, 22... Light section.
Claims (1)
スを供給するためのガス室を形成する電極と、 該電極に形成され、内径２mm以下で且つ前記基
体と対向する側の縁に曲面を有するか、もしくは
面取り加工されている多数のガス供給穴とを備
え、 該ガス供給穴から原料ガスを前記基体に向けて
放出しつつ、プラズマ放電によつて基体上に成膜
することを特徴とするプラズマCVD装置。[Scope of Claims] 1. A vacuum chamber; a substrate for forming a film disposed within the vacuum chamber; and a gas chamber disposed at a predetermined distance from the substrate for supplying raw material gas. an electrode, and a number of gas supply holes formed in the electrode, each having an inner diameter of 2 mm or less and having a curved surface or a chamfered edge on the side facing the base, and supplying raw material gas from the gas supply holes. A plasma CVD apparatus characterized in that a film is formed on a substrate by plasma discharge while emitting a substance toward the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13833484A JPS6115978A (en) | 1984-07-03 | 1984-07-03 | Plasma cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13833484A JPS6115978A (en) | 1984-07-03 | 1984-07-03 | Plasma cvd device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6115978A JPS6115978A (en) | 1986-01-24 |
| JPH0565590B2 true JPH0565590B2 (en) | 1993-09-20 |
Family
ID=15219478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13833484A Granted JPS6115978A (en) | 1984-07-03 | 1984-07-03 | Plasma cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6115978A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61121429A (en) * | 1984-11-19 | 1986-06-09 | Matsushita Electric Ind Co Ltd | Plasma cvd device |
| JPS61260623A (en) * | 1985-05-14 | 1986-11-18 | Matsushita Electric Ind Co Ltd | Plasma vapor growth equipment |
| KR100476872B1 (en) * | 1997-09-26 | 2005-07-05 | 삼성전자주식회사 | Cathode for etching fabrication of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56169116A (en) * | 1980-05-28 | 1981-12-25 | Sanyo Electric Co Ltd | Manufacture of amorphous silicon film |
-
1984
- 1984-07-03 JP JP13833484A patent/JPS6115978A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56169116A (en) * | 1980-05-28 | 1981-12-25 | Sanyo Electric Co Ltd | Manufacture of amorphous silicon film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6115978A (en) | 1986-01-24 |
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