JPS61121429A - Plasma cvd device - Google Patents

Abstract

PURPOSE:To prevent a particle from dropping to a substrate surface by heat- controlling an electrode surface with a temperature increasing device in forming a plasma CVD film. CONSTITUTION:A temperature increasing device 11 capable of heat-controlling a surface of an electrode 4 up to a predetermined temperature and an AC power source 12 to supply an electric power to this temperature increasing device 11 are provided. Therefore, in forming a plasma CVD film on a base material 2, after the surface of the electrode 4 is heated up to a predetermined temperature and bonding strength of the plasma CVD film bonding to the surface of the electrode 4 is enhanced, a particle is prevented from dr-opping to the surface of the base material 2.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to Prader CV D (Chemical
This invention relates to a plasma CVD device that can reduce particles falling onto the surface of a substrate and reduce pinholes and particles when forming a plasma CVD film on the surface of the substrate using the VaperDeposit ion method. .

Conventional plasma CVD equipment maintains a substrate in a heated state in a vacuum container, supplies a compound gas containing the constituent elements of the thin film to be formed into the vacuum container at a constant flow rate, and maintains the pressure in the vacuum container. By generating low-temperature plasma in the space containing the base material while maintaining it at a predetermined degree of vacuum below atmospheric pressure,
This is an apparatus for forming a desired plasma CVD film on the surface of a base material.

Hereinafter, with reference to the drawings, the above-mentioned conventional plasma C
The VD device will be explained.

FIG. 2 shows a conventional plasma CVD apparatus. In FIG. 2, 101 is a vacuum container capable of maintaining a vacuum state, 102 is a base material on which a plasma CVD film is formed, and 103 holds the base material 102, and has a heater inside. A sample stage IQ3a capable of heating the surface of the base material 102 is a heater mounted inside the sample stage 103, and 104 supplies a compound gas containing the constituent elements of the plasma CVD film to be formed. It has a gas supply part for introducing the compound gas into the vacuum container 101, and has a gas inlet for introducing the compound gas into the vacuum container 101. an electrode for generating low temperature plasma in a space containing 102;
6 is a high frequency power source with an output frequency of 13.56 MHz; 106 is a matching circuit provided to efficiently supply high frequency power to the electrode 104; 107 is an AC power source that supplies power to the heater 103a; 108 is an AC power source that supplies power to the heater 103a; , a vacuum pump for evacuating the pressure inside the vacuum container 101 to a degree of vacuum below atmospheric pressure, 109f'i, the vacuum container 101 and the vacuum pump 1
A vacuum exhaust pipe that airtightly connects between 08 and 110
is a butterfly valve for variably controlling the resistance inside the tube in order to control the pressure inside the vacuum vessel 101.

Regarding the plasma CVD apparatus configured as above,
The operation will be explained below.

First, the inside of the vacuum container 101 is pumped by the vacuum pump 108 for 60 minutes.
After evacuation to a vacuum level of mTorr or less, the base material 10
2. A compound gas containing the constituent elements of the thin film to be formed on the surface is introduced from the gas supply section of the electrode 104 into the vacuum container 101 through the gas inlet, and the butterfly valve 110 is operated to adjust the vacuum to the pressure that is the thin film forming condition. The inside of the container 101 is controlled. Further, the base material 102 is heated and controlled to a predetermined temperature by the sample stage 103. Next, low-temperature plasma is generated in the space including the base material 102 by supplying high-frequency power to the electrode 104 from the high-frequency power source 105. As a result of the above, a CVD film is placed on the surface of the base material 102.
When the plasma CVD film is formed on the surface of the substrate 102, the plasma CVD film also adheres to the surface of the electrode 104, and since its adhesion is weak, it falls onto the surface of the substrate 102 in the form of particles or lumps. As a result, there was a problem in that particle defects were generated within the plasma CVD film.

As described above, in the conventional plasma CVD film manufacturing apparatus, when a film is formed on the surface of the base material 102, the temperature of the surface of the electrode 104 is low and the temperature cannot be controlled. The adhesion force to the surface is weakened, and particles fall onto the surface of the base material 102, which tends to cause pinholes and defects in the plasma CVD film, and further causes a decrease in yield in subsequent steps.

In view of the above-mentioned problems, the present invention increases the adhesion force of the plasma CVD film that adheres to the electrode surface during plasma CVD film formation, prevents particles from falling onto the plugging material surface, and prevents the formation of pinholes, particles, etc. 1 while reducing internal defects.
Plasma C that can improve yield in post-processing
It provides a VD device.

Means for Solving the Problems In order to solve the above problems, the plasma CVD of the present invention
The apparatus includes a vacuum container capable of maintaining a vacuum state and a plasma CVD film on at least one side.

A sample stage that holds the base material formed on the surface, a heating device that heats the base material, a pump that creates a reduced pressure atmosphere inside the vacuum container, and a pipe that airtightly connects the vacuum container and the vacuum pump. , a gas inlet for introducing raw material gas into the vacuum container, and a state in which the inside of the vacuum container is controlled to a predetermined pressure.
A space containing at least a base material is equipped with an electrode for generating low-temperature plasma and a temperature raising device for heating and controlling the electrode.

Effects According to the present invention, with the above-described configuration, the surface of one electrode is heated and controlled by a temperature raising device when forming a plasma CVD film, and as a result, the higher the temperature of the adhesion surface, the greater the adhesive force of the plasma CVD film. The adhesion force of the plasma CVD film that adheres to the substrate increases, making it possible to prevent particles from falling onto the substrate surface.

EXAMPLES Hereinafter, plasma CVD apparatuses according to examples of the present invention will be described with reference to the drawings.

FIG. 1 shows a plasma CVD apparatus in an embodiment of the present invention.

In FIG. 1, 1 is a vacuum container capable of maintaining a vacuum state, 2 is a base material on which a plasma CVD film is formed, and 3 is a base material 2.
3a is a heating device for heating and controlling the base material 2 to a predetermined temperature by heating the sample stage 3; 4 is a compound gas containing the constituent elements of the plasma CVD film to be formed; It has a gas supply section for supplying
It has a gas inlet for introducing the compound gas into the vacuum container 1, and generates low-temperature plasma in the space containing the base material 2 while introducing the compound gas into the vacuum container 1 and controlling it to a predetermined pressure. The electrode 5 indicates the output frequency is 1
3°66MHz high frequency power supply, 6 is a matching circuit provided to efficiently supply high frequency power to the electrode 4, 7 is an AC power supply that supplies the heating device 3a [power, 8 is the pressure inside the vacuum container 1 to atmospheric pressure A vacuum pump for evacuation to the following degree of vacuum; 9 is a pipe for evacuation that airtightly connects the vacuum container 1 and the vacuum pump 8; 1Q is an internal resistance for controlling the pressure inside the vacuum container 1; 11 is a temperature raising device for heating and controlling the surface of the electrode 4 to a predetermined temperature, and 12 is a power source for supplying power to the temperature raising device 11.

Regarding the plasma CVD apparatus configured as above,
The operation will be explained below using FIG.

First, inside the vacuum container 1, the somTo
After evacuation to a degree of vacuum below rr, a compound gas containing the constituent elements of the thin film to be formed on the surface of the base material 2, i.e., monosilane (S 1H4), ammonia (NH3),
Mixed gas of nitrogen (N2) at 13SCCM and 16SC respectively
A gas flow rate of CM, s2 SCCM is introduced into the vacuum vessel 1 from the gas supply section of the electrode 4 through the gas inlet, and the pressure inside the vacuum vessel 1 is maintained at 460 mTorrVc by operating the butterfly valve 10. . Further, the base material 2 is heated and controlled to a temperature of 350° C. by the sample stage 3.

Further, the surface of the electrode 4 is heated to 250
The heating is controlled to a temperature of .degree. C. Next, by supplying high frequency power to the electrode 4 from the high frequency power source 5, low temperature plasma is generated in the space containing the base material 2. As a result of the above, a plasma silicon nitride film with a refractive index of 2.06 could be formed on the surface of the base material 2.

As described above, according to this embodiment, a temperature raising device 11 capable of heating and controlling the surface of the electrode 4 to a predetermined temperature and an AC power source 12 for supplying power to the temperature raising device 11 are provided. When forming a plasma CVD film on the base material 2, the surface of the electrode 4 is heated to a predetermined temperature to increase the adhesive force of the plasma CVD film adhering to the surface of the electrode 4.
It is possible to prevent particles from falling onto the surface of the base material 2.

In the embodiment, the high frequency power supply 5 has an output frequency of 13
．． Although the frequency is 56 MHz, the present invention is not limited thereto, and the high frequency power source 5 may have a low output frequency of 4'O to 500 KHz.

In addition, although the example uses an apparatus for forming a SiN film,
It can also be used for devices that form iO2 films and the like.

Effects of the Invention As described above, the present invention provides a vacuum container that can maintain a vacuum state, a sample stage that holds a base material on which a plasma CVD film is formed on at least one surface, and a sample stage that holds a base material on at least one surface of which a plasma CVD film is formed. A heating device and a pump to create a reduced pressure atmosphere inside the vacuum container, a pipe that airtightly connects the vacuum container and the vacuum pump, a gas inlet for introducing raw material gas into the vacuum container, and a predetermined pressure inside the vacuum container. By providing an electrode for generating low-temperature plasma and a temperature raising device for controlling heating of the electrode in a space containing at least the base material in a controlled state,
When forming a plasma CVD film, the electrode surface is heated, so the adhesion force of the plasma CVD film adhering to the electrode surface increases, and as a result, particles form and fall onto the base material surface. It is possible to prevent defects in the plasma CVD film such as pinholes and particles formed on the surface of the substrate and to reduce defects in the film, and the effect is remarkable.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram for explaining a plasma CVD apparatus in an embodiment of the present invention, and FIG. 2 is a conventional plasma CVD apparatus.
FIG. 2 is a schematic diagram for explaining the device. 1... Vacuum container, 3... Sample stand, 3a
... Heating device, 4 ... Electrode, 8 ...
...Vacuum pump, 9... (Eve, 11...
...Temperature raising device. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure (f-11 special bottle weak 1

Claims (1)

[Claims] Vacuum container that can maintain vacuum state and plasma CVD
A sample stage that holds a base material on which a film is formed on at least one surface, a heating device that heats the base material, a vacuum pump that creates a reduced pressure atmosphere in the vacuum container, and a vacuum container and vacuum pump. A low-temperature plasma is generated in the space containing at least the base material, with a pipe that airtightly connects the material, a gas inlet for introducing the raw material gas into the vacuum container, and a predetermined pressure controlled inside the vacuum container. A plasma CVD apparatus comprising an electrode and a temperature raising device for heating and controlling the electrode.