JPS5832413A - Film forming apparatus by glow discharge - Google Patents
Film forming apparatus by glow dischargeInfo
- Publication number
- JPS5832413A JPS5832413A JP56131011A JP13101181A JPS5832413A JP S5832413 A JPS5832413 A JP S5832413A JP 56131011 A JP56131011 A JP 56131011A JP 13101181 A JP13101181 A JP 13101181A JP S5832413 A JPS5832413 A JP S5832413A
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- gas
- glow discharge
- cylindrical
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Abstract
Description
【発明の詳細な説明】
本発明はグロー放電によって膜形成を行なう装置に係に
、特に反応室内へのガス導入部の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for forming a film by glow discharge, and particularly to an improvement in a gas introduction section into a reaction chamber.
従来グロー放電によりアモルファス８１等の膜形成を行
なう装置において、ガス導入は第１図に見られる如く反
応室上方より行なわれるのが一般的であった。図におい
て、１が反応室、２がガス導入管、Ｓが排気管である０
反応室１円に支持台４に支持された試料基板５が配置さ
れ、反応室１の外周にまかれた誘導コイルｅＶＣ高周波
電力を印加して所定圧力で導入された原料ガスをダロー
放電分解させて試料基板５上に膜形成を行うものである
。In conventional apparatuses for forming films such as amorphous 81 by glow discharge, gas was generally introduced from above the reaction chamber as shown in FIG. In the figure, 1 is the reaction chamber, 2 is the gas introduction pipe, and S is the exhaust pipe.
A sample substrate 5 supported on a support stand 4 is placed in one circle of the reaction chamber, and eVC high-frequency power is applied to an induction coil spread around the outer circumference of the reaction chamber 1 to cause the raw material gas introduced at a predetermined pressure to be decomposed by Darrow discharge. A film is formed on the sample substrate 5 using the method.
このような従来の装置では、図示のように平板状の試料
、例えばシリコンウェハ、ガラス板、石英板、金属板等
には、均一な膜を形成することが可能であったが、平板
とは異なる形状をもつ試料、例えば電子写真用Ａｊ製円
筒ドラム等の試料については均一な厚さのアモルファス
８１膜を形成することは困難であった。そして均一な膜
厚が得られない場合には、例えば電子写真用感光部材と
して前記の膜管使用した時には像形成に著しい不均一を
もたらすという欠点があった・
本発明は平板と異なる試料に対しても均一な膜厚の膜を
形成し得るグロー放電による膜形成装置を提供するもの
である。With such conventional equipment, it was possible to form a uniform film on flat samples such as silicon wafers, glass plates, quartz plates, metal plates, etc. as shown in the figure. It was difficult to form an amorphous 81 film of uniform thickness on samples with different shapes, such as AJ's cylindrical drums for electrophotography. If a uniform film thickness cannot be obtained, for example, when the membrane tube is used as a photosensitive member for electrophotography, there is a drawback that significant non-uniformity occurs in image formation. The object of the present invention is to provide a film forming apparatus using glow discharge that can form a film with a uniform thickness even when the film is formed.
本発明は、反応室の側部にガス導入管を配置し、かつ導
入された原料がスが反応室内で一定方向に回転するよう
に前記ガス導入管のがス噴出口の向きを設定することＫ
より、上記目的を達成する。The present invention includes arranging a gas introduction pipe on the side of a reaction chamber, and setting the direction of the gas outlet of the gas introduction pipe so that the introduced raw material rotates in a fixed direction within the reaction chamber. K
This will achieve the above objectives.
第２図（ａ） 、 Ｃｂ）は本発明の一実施例の装置を
模式的に示す縦断面図および横断面図である。FIGS. 2(a) and 2(c) are longitudinal and transverse sectional views schematically showing an apparatus according to an embodiment of the present invention.
１１は円筒状の反応室であって下部に排気管１３があり
、内部に支持台１４に支持されて円筒状試料１５が反応
室１１と同軸的に配置されている。がス導入管１２（１
２１〜１２４ ）は反応室１１の側面に周方向に回転対
称をなして４個所、各個所に縦方向に３本ずつ取付けら
れている。これらがス導入管１２のガス噴出口１ｇ（１
Ｂ、〜１６４ ）は、伽）図から明らかなように、ここ
から導入される原料ガスが反応室１１の中心方向に対し
て所定角度θだけ傾いて噴出するように向きが設定され
ている。例えば０２４５度に設定される。これにより、
反応室１１内で原料ガスは一定の方向に回転するように
表っている。反応室１１の外周には誘導コイル１７が巻
かれている。Reference numeral 11 denotes a cylindrical reaction chamber, which has an exhaust pipe 13 at its lower part, and a cylindrical sample 15 supported by a support stand 14 inside and coaxially arranged with the reaction chamber 11 . Gas inlet pipe 12 (1
21 to 124) are attached to the side surface of the reaction chamber 11 at four locations rotationally symmetrical in the circumferential direction, and three at each location in the vertical direction. These are the gas outlet 1g (1g) of the gas introduction pipe 12.
As is clear from the figure, the direction of the source gas introduced from here is set so that it is ejected at a predetermined angle θ with respect to the center direction of the reaction chamber 11. For example, it is set to 0245 degrees. This results in
The raw material gas appears to rotate in a constant direction within the reaction chamber 11. An induction coil 17 is wound around the outer periphery of the reaction chamber 11 .
この装置を用いて、円筒状試料１５として電子写真用Ａ
ｊ製ドラムを配置し、その表面にアモルファス８１膜を
堆積させる実験を行った。まず表面を清浄化したＡｔ製
！ラムを収容して反応室１１内を排気し、約１ ｘ １
６−’ Ｔｏｒｒ （１，３Ｘ１０″Ｐａ ）の真空度
まで到達させた。この時、Ａｊ製ドラムは内部ヒータ（
図示せず）によシ２５Ｇ℃まで加熱されている６次いで
ガス供給系を操作し、Ｈ２ペースのＳ％Ｈ９及びＢ２Ｈ
４を混合してガス導入管１２よシ反応室１１内へ導入す
る。この時排気系のパルプ操作により反応室１１内の圧
力を０．５ Ｔｏｒｒとする曇高周波電源のスイッチを
入れ誘導コイル１１に１３．５６ＭＨｉ（Ｄａ％周波電
力を投入し、反応室１１内にグロー放電を発生させ、５
０Ｗの入力電力とじ九、グロー放電線反応室１１内で安
定して均一に形成された。Using this device, as a cylindrical sample 15, A for electrophotography was prepared.
An experiment was conducted in which a drum made by J.J was placed and an amorphous 81 film was deposited on its surface. First of all, it is made of At with a cleaned surface! The inside of the reaction chamber 11 containing the ram is evacuated, and the size of the reaction chamber 11 is approximately 1 x 1.
The vacuum level was reached to 6-' Torr (1.3 x 10" Pa). At this time, the AJ drum was heated by an internal heater (
(not shown) was heated to 25 G°C.Then, the gas supply system was operated and the H2 pace S%H9 and B2H
4 are mixed and introduced into the reaction chamber 11 through the gas introduction pipe 12. At this time, the pressure in the reaction chamber 11 is set to 0.5 Torr by the pulp operation of the exhaust system.The high-frequency power source is turned on, and 13.56 MHi (Da% frequency power is applied to the induction coil 11), causing a glow inside the reaction chamber 11. Generate a discharge, 5
When the input power was 0 W, the glow discharge wire was formed stably and uniformly in the reaction chamber 11.
この状態で約１０時間Ａｔ製ドラムの外側面に、アモル
ファス８１属を堆積させてからグロー放電を切シ、ヒー
タをＯＦＦとして、試料温度を下げガス供給系を閉じて
十分なパージを行なった後ドラムをＭＲｐ出した。なお
、 ｈｔ製ドラムは成膜中、回転運動をさせ良、この時
形成され九アモルファス８に膜の厚さ拡２０μで、 Ａ
ｔ製ドラム全体にわ九りてムラが無く膜厚のバラツキは
１〇−以内であった。こうして形成されたアモルファス
８１属を電子写真用感光部材として使用した時全くムラ
の無い電子写真像が得られた・第３図（ａ） 、 （ｂ
）は別の実施例の縦断面図および横断面図である。第２
図と異なる点は、ガス導入管１１を反応室１１の上方か
ら反応ｗ１１１内に挿入し、これらガス導入管１２の長
手方向にガス噴出口１−を分布させたことである・この
場合も、ガス噴出口１σから噴出されるガスが反応’１
ｌｌｌ内で一定方向に回転するように、ガス噴出口１６
の向きが設定されていることは第２図と同じである。従
ってこの装置によっても先の実施例と同様の効果が得ら
れる。After depositing amorphous group 81 on the outer surface of the At drum for about 10 hours in this state, the glow discharge was turned off, the heater was turned off, the sample temperature was lowered, and the gas supply system was closed to perform sufficient purging. I put out the drum at MRp. The drum made of HT was rotated during film formation, and the thickness of the film formed at this time was 20 μm on the amorphous 8 film.
There was no uneven coating over the entire drum made of T, and the variation in film thickness was within 10 -. When the amorphous group 81 thus formed was used as a photosensitive member for electrophotography, an electrophotographic image with no unevenness was obtained. ・Figure 3 (a), (b)
) are longitudinal and transverse cross-sectional views of another embodiment. Second
The difference from the diagram is that the gas introduction pipes 11 are inserted into the reaction w111 from above the reaction chamber 11, and the gas jet ports 1- are distributed in the longitudinal direction of these gas introduction pipes 12. In this case as well, The gas ejected from the gas outlet 1σ reacts '1
The gas outlet 16 rotates in a fixed direction within the
The orientation of is set as in FIG. 2. Therefore, this device also provides the same effects as the previous embodiment.
なお、実施例では鋳導結合方式でグロー放電を発生させ
たが、容量結合方式でありても差し支えなく、その時に
は高周波を印加する電極を中空として、反応室内に組み
込みその電極からガスを噴出させる構造としても良い。In the example, glow discharge was generated using a casting coupling method, but a capacitive coupling method may also be used. In that case, the electrode for applying the high frequency is made hollow and is placed inside the reaction chamber, and gas is ejected from the electrode. It can also be used as a structure.
また本発明は、円筒状試料に対して特に有効であること
は上述したとおりであるが、平板状試料に対しても有効
である。Furthermore, although the present invention is particularly effective for cylindrical samples as described above, it is also effective for flat samples.
以上述べたように本発明によれば、ガス導入部を改良す
ることＫより、円筒状試料に対しても均一な膜を堆積す
ることが可能なグロー放電による膜形成装置を提供する
ことができる。As described above, according to the present invention, by improving the gas introduction part, it is possible to provide a film forming apparatus using glow discharge that can deposit a uniform film even on a cylindrical sample. .
【図面の簡単な説明】
第１図は従来装置を示す模式的縦断面図、第２図は（、
） 、 （ｂ）はそれぞれ本発明の一実施例の装置を模
式的に示す縦断面図および横断面図、第３図（、） 、
（ｂ）はそれぞれ他の実施例の装置を模式的に示す縦
断面図および横断面図である。
１１・・・反応室、１２・・・ガス導入管、１３・・・
排気管、１５・・・円筒状試料、１６・・・ガス噴出口
。
出願人代理人 弁理士 鈴 江 武 彦矛１図
３ＩＰ２図
矛
（ａ）
↓
（ｂ）
１′２２[Brief explanation of the drawings] Fig. 1 is a schematic vertical sectional view showing a conventional device, and Fig. 2 is a (,
), (b) are a vertical cross-sectional view and a cross-sectional view schematically showing an apparatus according to an embodiment of the present invention, and FIG. 3 (, ),
(b) is a vertical cross-sectional view and a cross-sectional view schematically showing devices of other embodiments, respectively. 11... Reaction chamber, 12... Gas introduction pipe, 13...
Exhaust pipe, 15... Cylindrical sample, 16... Gas outlet. Applicant's agent Patent attorney Takehiko Suzue 1 Figure 3 IP 2 Figure (a) ↓ (b) 1'22
Claims (2)
し、この原料ガスをグロー放電圧よって分解して前記試
料の表面に膜形成を行う装置において、前記反応室の側
部にガス導入管を配置し、かつ導入された原料ガスが前
記反応室内で一宇方向に回転するように前記ガス導入管
のガス噴出口の向きを設定したことを特徴とするグロー
放電による膜形成装置。(1) In an apparatus that introduces a raw material gas into a reaction chamber in which a sample is placed, and decomposes this raw material gas by a glow discharge voltage to form a film on the surface of the sample, a gas introduction pipe is installed on the side of the reaction chamber. A film forming apparatus using glow discharge, characterized in that the direction of the gas ejection port of the gas introduction tube is set so that the introduced raw material gas rotates in a direction within the reaction chamber.
軸的に配置される特許請求の範囲第１項記載のグロー放
電による膜形成装置。(2) The film forming apparatus using glow discharge according to claim 1, wherein the sample is a cylindrical sample and is arranged coaxially within the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56131011A JPS5832413A (en) | 1981-08-21 | 1981-08-21 | Film forming apparatus by glow discharge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56131011A JPS5832413A (en) | 1981-08-21 | 1981-08-21 | Film forming apparatus by glow discharge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5832413A true JPS5832413A (en) | 1983-02-25 |
Family
ID=15047885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56131011A Pending JPS5832413A (en) | 1981-08-21 | 1981-08-21 | Film forming apparatus by glow discharge |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5832413A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63479A (en) * | 1986-06-20 | 1988-01-05 | Canon Inc | Device for forming functional deposited film by plasma cvd method |
| JPH1187092A (en) * | 1997-09-01 | 1999-03-30 | F O I:Kk | Plasma generating device |
| US6158382A (en) * | 1996-12-12 | 2000-12-12 | Canon Kabushiki Kaisha | Method for forming a deposited film by plasma chemical vapor deposition and apparatus for forming a deposited film by plasma chemical vapor deposition |
| JP2022520210A (en) * | 2019-02-07 | 2022-03-29 | マトソン テクノロジー インコーポレイテッド | Gas feeder with angled injectors in plasma processing equipment |
-
1981
- 1981-08-21 JP JP56131011A patent/JPS5832413A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63479A (en) * | 1986-06-20 | 1988-01-05 | Canon Inc | Device for forming functional deposited film by plasma cvd method |
| US6158382A (en) * | 1996-12-12 | 2000-12-12 | Canon Kabushiki Kaisha | Method for forming a deposited film by plasma chemical vapor deposition and apparatus for forming a deposited film by plasma chemical vapor deposition |
| JPH1187092A (en) * | 1997-09-01 | 1999-03-30 | F O I:Kk | Plasma generating device |
| JP2022520210A (en) * | 2019-02-07 | 2022-03-29 | マトソン テクノロジー インコーポレイテッド | Gas feeder with angled injectors in plasma processing equipment |
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