JPS58154226A - Plasma cvd apparatus - Google Patents

Abstract

PURPOSE:To form films of good quality on a number of substrates having a large area by a method wherein the substrates are arranged across double cylindrical or polygonal pillar-shaped electrodes, which are formed in such a manner that reaction gas uniformly flows therebetween. CONSTITUTION:Second electrodes 15 are arranged suitably far from the periphery of a first cylindrical or polygonal pillar-shaped electrode 12 and a suitable space is also provided between the second electrodes, whereas substrates 16 are suitably positioned between the second electrodes 15 and the first electrode 12. Moreover, a heater 13 using infrared rays is provided on the first electrode side and gas is introduced in a chamber from a projected port 11 provided on the first electrode side and the gas is discharged from the space. In so doing, films are simultaneously formed on a number of substrates having a large area and the flow of the reaction gas and then the state of plasma can be made uniform. By properly changing the position of the substrate, the film of good quality having suitable thickness is formed in an optimum atmosphere of reaction.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a CVD apparatus which is one of the a-film manufacturing techniques such as vacuum evaporation method and sputtering method, and in particular to a plasma CVD apparatus which turns a reactive gas into a plasma state during film formation.
Regarding HII/.

Generally used CVOI equipment supplies gases necessary for the reaction (hereinafter simply referred to as "gases"), such as gases directly involved in film formation, or a gas supply system that circulates these gases as necessary. The reactor system includes a reaction system that reacts gases to form a ridge on a predetermined substrate, and an exhaust system that exhausts the gas after the reaction or waste gas.

In addition, the amount of Plasun CV I',) is different from the reaction system (
, (2), the method for bringing the plasma to R11 is described.(This method is roughly divided into the container coupling method and the inductive coupling method. Of these, the capacitive coupling method is, for example, the As shown in Fig. 1, disc-shaped electrodes 97C198C are arranged at a predetermined interval in a predetermined reaction vessel (hereinafter referred to as "chamber") 99C, and a power source 95C is connected between the two electrodes. -) (Appropriate voltage (DC or high frequency voltage) is applied.

On the electrode 97C is an M plate 96C on which a film is formed.
is placed, and from the intake IJ 93 G to the arrow 0-1
The gas flows in as shown, and the exhaust gas [1'92
Gas flows out like this. When a voltage is applied between the electrodes, a discharge occurs within the chamber 99C, and the waste portion is turned into plasma.

for example? In step 4 of producing a thin film of amorphous silicon, silane gas (StHa) and silicon fluoride were used.
At the same time, a voltage of about several KV is applied between the electrodes 97C and 198C to decompose the silane gas and the like into St, St H, St Hz, etc. Forms ions. These deposit on the substrate and form a slag.

In addition, the inductive coupling method is as shown in Figure 2.
31. The chamber has an exhaust port 92L and is made of an insulating material such as quartz (by winding an insulator of 4F around the outer circumference of the chamber 99L to be formed, and flowing a high-frequency current into it). The gas in the chamber 99L is turned into a plasma at 11 degrees. A pedestal 99C is provided in the chamber 99L, and a substrate 96L is placed on the pedestal 99C.

The gas flows as shown by the arrows L1 to L3, but is decomposed and turned into plasma by the magnetic field generated by energizing the inverter 941 within the diagonal inverter 991. A film is formed on the surface.

The plasma CVD method described below is capable of forming a film over a relatively large area compared to other thin acid formation methods.
In addition to the advantages of the D method, it also has advantages such as reduction in gas starvation and substrate temperature due to the behavior of plasma during the film formation process.

This is Techsan 1, which is expected to develop in the future.

However, in the conventional plasma CV D-1 & II cell omega coupling method, in order to simultaneously form a film on a large area or a large number of M plates, it is necessary to increase the area of the electrode or provide a large number of electrodes. (However, if the electrode area is increased, the shape becomes flat. This results in an increase in the size of the entire device or inconsistency of the plasma.On the other hand, if the number of electrodes is increased and the number of electrodes is increased, the small electrode structure It is not suitable for film formation on large-area substrates, and there is the disadvantage that discharge occurs between electrodes when using a conductive gas.

, Lt-, Although the inductive coupling method can achieve a dense plasma, it has the disadvantage of causing non-uniformity of the nozzle when forming a film on a large-area substrate.

This invention was made in view of the above-mentioned circumstances, and aims to improve the drawbacks of the prior art, make it possible to form a film on a large number of large-sized 1lIII substrates, and even out the advantages. The purpose is to provide a plasma CVD %ILIV that can form good discipline in an optimal reaction atmosphere.

In other words, in this invention, an electrode stand for plasma generation is formed in the shape of a small cylinder or a polygonal prism, a substrate is arranged between these electrodes, and a heating device for the substrate is of an infrared irradiation type or the like to heat the central electrode. In addition to making it possible to change the position of the substrate by placing it on the side, it is also possible to form the electrodes so that the reaction gas flows evenly between both electrodes. It is made 11 times better.

Hereinafter, the plasma CVD apparatus according to the present invention will be described in detail according to embodiments with reference to the attached 61 drawings.

FIG. 3 is a perspective view showing a partial cross section of the chamber 10 which is the reaction system of the plasma CVD apparatus according to the present invention.
Yes, along the tv-tv line t in this figure) I = side cross section 4th
In the figure, a cross section taken along the line v-V is shown in 5J [1]. Note that FIG. 3 shows the lid 19 in the open state, and FIG. 4 shows the closed state. J1゜In these Figures 3 to 5, the chamber 10 consists of a main body 11 and a cover 19 (the cover 19 can be opened and closed to set the board 16 as described later). so that a
end.

The main body 11 is formed into a substantially cylindrical shape, and is provided with an intake port 17 at a substantially medium bottom portion, and an intake port 1118 at an appropriate position on the side.

Behind this, it is connected to the intake L117, t-'t''), 4,
A cylindrical electrode (referred to as an ``anode'' in the upper part of the body 11) 12 is provided protruding from the recessed part of the body 11.

On the side surface of this anode 12, a large number of gas protrusions 111-
1 are arranged regularly, and the intake air [-, 1'17
The IJ is arranged so that the gas introduced from the gas outlet E1 is released into the chamber 10 from the gas outlet E1. Appropriate insulation is applied to the means t and d, and a voltage for the positive light 1 is applied thereto.

A support member 14 is provided on the upper part of this anode 12, and the position where this support member 14 intersects with the outer surface of the 7 nodes 12 and the inner bottom surface of the main body 10 and the 7 nodes 1
A heating device [1
13 are provided symmetrically. This heating device 13 has a structure in which a halogen lamp 13A is housed in a transparent case made of quartz or the like, and infrared rays emitted from the halogen lamp 13A are irradiated onto the opposing substrate 16.

Next, the outer periphery of the anode 12 is provided with an appropriate interval of 15A.
Four other electrodes (hereinafter simply referred to as "cathode") 15 having a substantially circular arc shape are arranged symmetrically. These cool
115 respectively face the heating device 13, and the cathode 15 and the an-11 feces 1. -Okay, it's formed...
Ml, cylindrical; A substrate 16 is placed at an appropriate position within the space. In FIG. 3, only one substrate 16 is shown, but the fifth
In the figure, four boards 16 are arranged.
6 is attached to a suitable substrate holder 168 (to be placed inside the inverter 10) (but since the cathode 15 is normally grounded, this cathode 15
A holder device is installed in the GJ, and the substrate 16 is placed on the surface of the cathode 15.

As shown above, inside the chamber 10, the substrates 16 are arranged radially and symmetrically around the cylindrical anode 12, and the cathode 15 is arranged behind the substrate 1G at a similar symmetrical position. The substrate 16 is irradiated with infrared rays 41 at the upper and lower portions of the anode 12.
-s heating device 13 is arranged. subordinate
) The plan view of the interior of the τ chamber 10 is approximately λ·1 as shown in FIG. However, depending on the number of V plates 16, the number of 7J swords 15 and heating devices 13 may be increased or decreased.
Further, it is not necessary to arrange the substrates 16 symmetrically.

Next, the intake air D1""7 is connected to a gas supply system (not shown) having the same configuration as the conventional one, and the υ1 air port 18 is connected to a gas supply system (not shown) such as a low-reservoir pump (not shown) or a scarf-le-Fuster pump (not shown). Connected to the exhaust system. Also, main body 1
A seal 20 (not shown in FIG. 1) is provided at the upper end of the seal 1 to improve the adhesion between the main body 11 and the lid 19 and to prevent vacuum leakage. ing.

Next, the overall operation of the above embodiment will be explained. maf base 16
Without setting the chamber 10 in the chamber 10, the base 19 is closed and the air is evacuated from the exhaust port 18 to bring the inside of the chamber 10 into an appropriate vacuum state. At this time, depending on the necessity, C chamber 10
The whole is baked by means not shown, and unnecessary adsorbed gas is exhausted. After that, the reaction gas is introduced into the chamber 10 from the intake port 17 as indicated by the arrow F1 in FIG.
The conditions are the same as those for film formation, such as the degree of vacuum, gas mixture ratio, flow rate, etc., and the anode 12 and anode 15 are
A voltage is applied between the two and the plasma generation stage is avoided.

In this state, the state of the plasma in the space from the seven nodes 12 to the cathode 15 is observed using a spectrometer or mass spectrometer (not shown), and its distribution is investigated.

After that, the lid 19 is opened and the substrate 16 is pressed.

At this time, referring to the plasma distribution investigated by the above-mentioned operations, the optimum position for forming and discharging the substrate, that is, the distance from the anode 12, is determined, and the substrate 16 is set at this position. For example, in the above-mentioned amorphous silicone 43, the substrate 16 is set at the position where the active species of S, 11, and 11@ are the highest.

Next, the lid part 19 is closed (the inside of the chamber 10 is vacuumed again. At this time, in addition to baking the entire chamber 10 described above, by heating the base 1G with the heating device 13, the surface of the substrate 16 is heated.・]Removal of fine dust etc. can improve the quality of the film formed.Also, after vacuuming to a certain extent, the removal of dust, etc. By introducing a small amount of active gas and applying a voltage to the anode 12 to generate an appropriate discharge and avoid the gas R1, dust and the like adhering not only to the surface of the substrate 16 but also to the surface of the cathode 15 are removed. 1° or more 1
After the above operation, a reactive gas is introduced into the bubble 10 as indicated by the arrow F1 in FIG. 4, and a voltage is applied to the anode 12 under predetermined conditions to generate a bubble. As a result, a film is formed on the surface l of the substrate 16. Since the reaction gas flows into the chamber 10 from the regularly arranged gas outlets H of the anode 12, the reaction gas flows approximately evenly.
1Q between the cathodes 15 and 1Q.
(see FIG. 5), which reaches the front surface of the cathode 15 from the space 15A provided in the 4th direction), and further exhaust gas from the space 118 as shown by arrow 2 in FIG. The distribution is maintained to be approximately uniform and -1 symmetrical, and a high quality film is formed on the substrate.The substrate 16 is heated by a heating device if necessary.

In the apparatus prototyped in connection with the present invention, the magnetic flux during film formation was 1 l-Orr to 7 orr, the voltage applied to the anode 12 was 13.56 MHz, several Kv, the inner diameter of the chamber 10 was 30 al+, and the height was 30 7 as a piece
Films were simultaneously formed on about 10 glass substrates with a size of cm x 24α, and extremely good film quality and film formation speed were obtained.

In the above embodiment, four cathodes 15 are provided in the dif- fer 10 (J, but an appropriate number may be provided as necessary. Also, the number of substrates 16 and the number of cathodes 15 are set to match 2). For example, three substrates 16 may correspond to one cathode 15. Also, a plurality of exhaust ports 18 may be provided as necessary. In the above, the chamber 10 was formed in a cylindrical shape, but it was formed in a polygonal column shape, and the anode 12 was formed in a polygonal shape with +1
The substrate 1G and the cathode 15 may be arranged so as to correspond to each side surface, or the cathode 1j5 may be formed as a flat plate. Further, the gas protrusion [] 11 may be provided on the bottom surface of the chamber 10.

[As explained above, the plasma CV according to the present invention
According to the device D, the second #i pole is placed at an appropriate distance on the outer periphery of the cylindrical or polygonal columnar first electrode, and the second electrode phase n is stepped at an appropriate interval. ], place the M plate at the appropriate position (C) between these second electrodes and the first electrode,
Further, a heating device using 4 external wires is provided on the side of the first electrode, and an f-span installed on the side of the first electrode (into the chamber from the gas outlet) is introduced into the chamber, and furthermore, gas is introduced from the above-mentioned interval into an exhaust pipe. As a result, it is possible to perform film formation on a large number of human-faced substrates at the same u1, and by uniformizing the flow of the reactant gas and the state of the plasma, and by changing the position of the substrates as appropriate, the process can be optimized. It has an excellent effect of being able to form a film with good quality and thickness in a reaction atmosphere.

[Brief explanation of the drawing]

Figure 1 shows the M-line configuration of a capacitively coupled plasma CVD apparatus. Figure R and Figure 2 are M* coupled type plasma C.
FIG. 4 is a perspective view showing the basic configuration of a VD device; FIG. 5 is a sectional view taken along line v--v in FIG. 3. FIG. 12... Anode which is the first electrode, 13... Heating device, 15... Cathode which is the second electrode, to 1b.
... spacing, 16... substrate, 11... gas protrusion].

Claims (1)

[Claims] A plasma CV r comprising a predetermined gas supply system, a reaction system for forming a film, and a gas exhaust system, and the reaction system is provided with first and second electrodes for plasma light '1; ) In the H position, the first electrode is formed into a hollow circular shape or an IJ polygonal shape, and a plurality of gas outlets are arranged on its side surface (2), and a certain number of gas outlets are arranged around the first electrode. A plurality of second electrodes are arranged at a distance and at a constant interval Jj to the phase n, and a
A plasma CVD apparatus characterized in that a substrate is disposed on the surface of the first electrode, and a heating device for irradiating the substrate with infrared rays is disposed near the first electrode.