JPH041730Y2 - - Google Patents

Description

[Detailed explanation of the idea] SiN in the semiconductor device manufacturing process,
There is a plasma chemical vapor phase production method that applies glow discharge to the production of thin films of SiO ₂ and PSG (phosphosilicate glass) and amorphous Si (a-Si:H) for solar cells.

The present invention relates to a plasma chemical vapor phase generation apparatus for producing the various thin films mentioned above.

FIG. 1 shows an explanatory vertical cross-sectional view showing an example of a conventional device, in which 1a and 1b are upper and lower plate-shaped electrodes, and a high frequency power source 2 is connected between both electrodes 1a and 1b. 3 is a large number of substrates arranged on the lower plate-shaped electrode 1b, 4 is a heater for heating the substrate 3, and the electrodes 1a, 1b, the substrate 3, and the heater 4 are housed in a metal reaction chamber _5a1 . ing. 6 is a reaction gas injection pipe, 7 is a reaction gas injection valve, 8 is an exhaust pipe,
Connected to the exhaust pump.

Such a conventional parallel plate plasma chemical vapor generation apparatus has the disadvantage that the electrodes 1a and 1b must be extremely large in order to process a large number of substrates 3 at once, making the entire apparatus large. .

FIG. 2a is an explanatory longitudinal cross-sectional view showing another example of the conventional device, and FIG. 2b is an explanatory cross-sectional view of the electrode section of the device.
Arrange a, 1b, 1a, 1b in parallel, 1
Alternate plate-shaped electrodes 1a, 1a and 1b, 1b are each grouped together, a high frequency power source 2 is connected between both groups, and a substrate 3 is arranged between each electrode 1a, 1b.

In such a conventional hot wall plasma chemical vapor generation apparatus, a large number of substrates 3 can be arranged between a large number of electrodes 1a and 1b, and therefore a large number of substrates 3 can be processed at once. The disadvantage is that it takes time.

In addition, both the apparatuses shown in the first and second figures have an electrode 1 made of metal, carbon, etc. in the reaction chamber 5a ₁ or the reaction tube 5.
In order to generate a vapor phase thin film on each substrate 3 by accommodating the electrodes 1a and 1b, the metal, carbon, etc. from the electrodes 1a and 1b are exposed to glow discharge in the high temperature region in the reaction chamber 5a ₁ and the reaction tube 5. There is a disadvantage that the reaction gas flow path 10 is contaminated and the produced thin film is contaminated.

The present invention was made with the aim of solving the above-mentioned drawbacks, and consists of an inner and an outer cylindrical reaction tube arranged concentrically, and an inner and an outer cylindrical reaction tube of the inner cylindrical reaction tube. By arranging the inner cylindrical electrode and the outer cylindrical electrode on the outside of the cylindrical reaction tube, it is possible to prevent contamination of the produced thin film, and also to prevent at least the outer circumferential surface of the inner cylindrical reaction tube and the inner circumferential surface of the outer cylindrical reaction tube. By providing a large number of substrates with a large number of substrate trays along one circumferential surface, the number of substrates processed can be increased to the same level or higher than that of the hot wall type.
Further, it is an object of the present invention to provide a plasma chemical vapor phase generation apparatus in which the substrate can be easily attached and detached from the side of the opening edge holder of the substrate tray.

Embodiments of the present invention will be described above with reference to the drawings.

3 is an explanatory longitudinal cross-sectional view of the first embodiment, FIG. 4 is an explanatory cross-sectional view of the electrode portion thereof, and FIG. 5a is a cross-sectional view showing a state in which a substrate is inserted and held in a substrate tray.

In the first embodiment, the reaction tube 5 is
As shown in the figure, the inner and outer cylindrical reaction tubes 5a and 5b made of, for example, quartz are arranged concentrically. shaped electrode 1
a ₁ and the outer cylindrical electrode 1b ₁ are arranged, and a large number of electrodes are arranged along the outer peripheral surface of the inner cylindrical reaction tube 5a so that the opening 9a side faces the reaction gas flow passage 10 formed between the reaction tubes 5a and 5b. The quartz substrate trays 9 are arranged side by side in a polygonal shape, and the substrates 3 are inserted and held in the opening edge holding portions 9b of each substrate tray 9, respectively, as shown in FIGS. 3, 4, and 5a. do.

Note that 11 is a conductance valve inserted into the exhaust pipe 8, and 12 is an exhaust pump connected to the exhaust pipe 8.

Since the first embodiment has the above-mentioned configuration, the reaction gas injection pipe 6 can be used to inject SiH ₄ reaction gas or Si ₂ H ₆ into the reaction gas injection pipe 6.
In the case of the P layer and the N layer, the reaction gas added with B ₂ H ₆ and PH ₃ is injected and evacuated by the exhaust pump 12, and the pressure inside the reaction tube 5 is adjusted to 10 to several times by adjusting the valves 7 and 11. The reaction gas is caused to flow through the reaction gas flow path 10 while being maintained at a constant value of about 100 Pascals. When the installation area of the substrate 3 is heated to a uniform temperature by the heater 4 provided outside the reaction tube 5, and a high frequency voltage is applied between the electrodes 1a ₁ and 1b ₁ by the high frequency power supply 2, the electrodes 1a ₁ and 1b Glow discharge occurs in the reaction gas flow path 10 between 1 and ₁ , and this glow discharge causes chemically active molecules (radicals) to
However, since the substrate 3 is arranged near the electrode 1a ₁ , the energy of charged particles (electrons, ions) near the electrode 1a ₁ is sufficiently high, and high-density radicals are generated. Create. These radicals react on the substrate 3, and high-energy charged particles collide with the surface of the substrate 3 to promote the reaction, so that a vapor-phase thin film (in this case a-Si:H (thin film) is rapidly deposited and formed.

FIG. 6 shows an explanatory cross-sectional view of the electrode section in the second embodiment. A large number of quartz substrate trays 9 are arranged side by side in a polygonal shape so as to face the reaction gas flow path 10 formed between the tubes 5a and 5b, and the substrate 3 is inserted into the opening edge holding portion 9b of each substrate tray 9. This is the case when it is retained and configured. This second embodiment also operates in the same way as the first embodiment.

In addition, in the present invention, a large number of substrate trays 9 may be arranged in parallel in a polygonal shape only along the inner peripheral surface of the outer cylindrical reaction tube 5b, and the electrodes 1a ₁ and 1b ₁ and the reaction tubes 5a and 5b may be arranged in parallel. The shape does not need to be limited to a cylindrical shape as in the first and second embodiments, and of course may be a polygonal cylindrical shape. In addition, not only the substrate 3 but also a quartz mask 13 may be inserted and held in each substrate tray 9 as shown in FIG. I can do it. Furthermore, a plurality of apparatuses (furnaces) according to the present invention may be connected via gate valves to provide a transport mechanism for the substrate tray 9. In this case, after the film is formed on the substrate 3 in the first furnace, , the substrate tray 9 is transported to the next furnace and another film is formed on it.
It is possible to continuously produce multilayer films, such as continuous production of .

As is clear from the above description, according to the present invention, a large number of substrates 3 provided in the reaction tube 5 are heated between the electrodes to which a high frequency voltage is applied while a reaction gas is passed through the reaction tube 5. In an apparatus for producing a gas phase thin film on each substrate 3, a reaction tube 5 is composed of inner and outer cylindrical reaction tubes 5a and 5b arranged concentrically, and the inner and outer cylindrical reaction tubes 5a and 5b are arranged concentrically. Each inner cylindrical electrode 1 is provided on the outside of the reaction tube 5b.
Since the configuration is such that the outer cylindrical electrode _1b1 and the outer cylindrical electrode _1b1 are arranged, a quartz material (substrate tray, mask) is provided in the part of the reaction gas flow path 10 that is exposed to glow discharge in the high temperature region inside the reaction tube 5. Since there are no electrodes 1a ₁ , 1b ₁ made of metal or carbon other than the substrate 3,
The produced thin film is not contaminated by metals, carbon, etc., and it is possible to obtain a produced thin film with excellent properties. Since a large number of quartz substrate trays 9 are arranged in a multifaceted manner along at least one of the circumferential surfaces, a large number of substrates 3 can be processed at once. If the substrate trays 9 are arranged side by side in a multifaceted manner, a large amount of substrates can be processed. Also, the board 3
Since the attachment and detachment can be carried out from the side of the opening edge holding portion 9b of the substrate tray 9 (in the direction perpendicular to the paper plane of FIGS. 5a and 5b), it is extremely easy to attach and detach.

[Brief explanation of the drawing]

FIG. 1 is an explanatory longitudinal sectional view showing an example of a conventional device, FIG. 2 a is an explanatory longitudinal sectional view showing another example of the conventional device, and FIG.
3 is an explanatory longitudinal cross-sectional view of the first embodiment of the device of the present invention, FIG. 4 is an explanatory cross-sectional view of the electrode portion thereof, and FIG.
Figure a is a cross-sectional view showing a state in which a substrate is inserted and held in a substrate tray, Figure 5 b is a cross-sectional view showing a state in which a substrate is inserted and held together with a mask in a substrate tray, and Figure 6 is a cross-sectional view showing a state in which a substrate is inserted and held in a substrate tray together with a mask. It is a cross-sectional view for explanation. 1a ₁ , 1b ₁ ... Inner and outer cylindrical electrodes, 2 ... High frequency power supply, 3 ... Substrate, 4 ... Heater, 5 ... Reaction tube, 5a ... Inner (circular) cylindrical reaction tube, 5b ... …
Outer (circular) cylindrical reaction tube, 6...reaction gas injection tube,
7... Reaction gas injection valve, 8... Exhaust pipe, 9
... Substrate tray, 9a ... Opening, 9b ... Opening edge holding part, 10 ... Reaction gas flow path, 11 ... Conductance valve, 12 ... Exhaust pump, 13 ...
…mask.

Claims (1)

[Scope of utility model registration request] In an apparatus in which a large number of substrates provided in a reaction tube are heated between electrodes to which a high frequency voltage is applied while a reaction gas is passed through the reaction tube to generate a vapor phase thin film on each substrate, the reaction tubes are arranged concentrically. An inner cylindrical electrode and an outer cylindrical electrode are arranged inside the inner cylindrical reaction tube and outside the outer cylindrical reaction tube, respectively. A large number of quartz substrate trays are formed into a polygonal shape so that the opening side faces the reaction gas flow passage formed between both reaction tubes along at least one of the outer peripheral surface of the outer peripheral surface and the inner peripheral surface of the outer cylindrical reaction tube. The plasma chemical vapor phase generation device is constructed by arranging the substrates in parallel and inserting and holding the substrates into the opening edge holding portions of each of the substrate trays.