JPS5830125A - Apparatus for film formation using glow discharge - Google Patents
Apparatus for film formation using glow dischargeInfo
- Publication number
- JPS5830125A JPS5830125A JP12900481A JP12900481A JPS5830125A JP S5830125 A JPS5830125 A JP S5830125A JP 12900481 A JP12900481 A JP 12900481A JP 12900481 A JP12900481 A JP 12900481A JP S5830125 A JPS5830125 A JP S5830125A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction chamber
- glow discharge
- nozzles
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はグロー放電によって所定のガスを分解して膜形
成を行う装置番ζ係り1%にその反応室へQJガス導入
部の改爽に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to refreshing the QJ gas introduction section into the reaction chamber of an apparatus number ζ for forming a film by decomposing a predetermined gas by glow discharge.
H3ペースのgin、ガスをグロー放電により分解して
非晶質シリコン(a−8j)gを形成する技術が最近注
目されている。この方法で膜形成を行う装置は、従来1
11r!M;Jのように構成されている。lが反応室で
あって、上部にガス導入管2が接続され下部は排気管S
に接続されている1反応filの周囲には誘導コイル4
がまかれて右り、内部に支持台5に支持されて試料基板
6が配置される。Recently, a technique of forming amorphous silicon (a-8j) by decomposing H3 pace gin gas by glow discharge has been attracting attention. Conventional equipment for film formation using this method is
11r! It is configured like M;J. 1 is a reaction chamber, the gas introduction pipe 2 is connected to the upper part, and the exhaust pipe S is connected to the lower part.
There is an induction coil 4 around the 1 reaction fil connected to the
The sample substrate 6 is placed inside, supported by a support stand 5.
このような構成として、偶えはガス導入f2η)らH雪
ペースの別にガスf 0.5 Torr程直になるよう
に反応室1円に供給し%誘導コイル4に高周波電力そ印
加してグロー放電をおこすことにより、試料基板6上に
1−8最膜を堆積することができる。With such a configuration, apart from the gas introduction f2η), the gas f2η) is supplied to the reaction chamber so as to be approximately 0.5 Torr, and high-frequency power is applied to the induction coil 4 to generate a glow. By generating electric discharge, the 1-8 film can be deposited on the sample substrate 6.
第1図に示すように、従来のこの種装置ではガス導入)
反応室の上方η)ら行うのが一般的であった。シカしな
がらこの構成では、平板状の試料1例えばシリコンクエ
へ、ガラス板0石英板、金属板等に対しては均一な膜を
形成することが可能であっても、平板とは異なる形状1
例えば電子写真用ドラムのような円筒状金属試料に対し
て均一な厚さに1−81膜を形成す令ことは困廟であっ
た。そして均一な膜厚が得られない電子写真用ドラムを
使用した場合には、像形成に著しい不均一をもたらすと
いう欠点があった。As shown in Figure 1, in the conventional equipment of this type, gas is introduced)
It was common to carry out the reaction from the upper part of the reaction chamber. However, with this configuration, even if it is possible to form a uniform film on a flat sample 1 such as a silicone plate, a glass plate, a quartz plate, a metal plate, etc.
For example, it is difficult to form a 1-81 film to a uniform thickness on a cylindrical metal sample such as an electrophotographic drum. When an electrophotographic drum is used in which a uniform film thickness cannot be obtained, there is a drawback that significant non-uniformity occurs in image formation.
本発明は、ガス導入sJ!−改良して平板と異な6試料
に対しても均一なlll1ヲ形成すΦことができるよう
にしたグロー放電による膜形成装置を提供すΦものであ
る。The present invention provides gas introduction sJ! - To provide a film forming apparatus using glow discharge which has been improved so as to be able to form a uniform layer even on six different samples than flat plates.
すなわち本発明は、長手方向に4M数のガス噴出口を分
布させたガス導入管を用い、これを反応室内に挿入して
1反応室内に#記複数のガス噴出口から均一にガスを供
給するように構成したことを特徴としている。That is, the present invention uses a gas introduction pipe having 4M gas outlets distributed in the longitudinal direction, and inserts this into a reaction chamber to uniformly supply gas from a plurality of gas outlets marked with # into one reaction chamber. It is characterized by being configured as follows.
この場合、複数のガス噴出口から均一にガスを噴出させ
るためには、複数のガス噴出口を、(1)ガス供給Sか
ら離れるに従って面積が大きくなるように、かつ等間隔
で形成するか、または(2)面積が同じで、かつガス供
給源更ら趨れるに従って間隔が大きくなるように形成す
る。このようlこする時、ガス導入管のガス圧力の高い
ところではコンダクタンスが小春<、ガス圧力の小さい
部分でコンダクタンスが大となるため、ガス導入管に沿
って各噴出口から流出するガス量はほぼ一定となり、試
料周囲に均一なプラズマが形成されるので均一な厚さの
膜が堆積されるのである。In this case, in order to uniformly eject gas from the plurality of gas ejection ports, the plurality of gas ejection ports are either (1) formed at equal intervals so that the area increases as the distance from the gas supply S increases; or (2) they are formed to have the same area and to be formed so that the distance from the gas supply source increases as the distance from the gas supply source increases. When rubbing in this way, the conductance is small in the areas of the gas introduction pipe where the gas pressure is high, and the conductance is large in the areas where the gas pressure is low, so the amount of gas flowing out from each jet port along the gas introduction pipe is Since the plasma is almost constant and uniform plasma is formed around the sample, a film of uniform thickness is deposited.
次に本発f14t−その一実施例を用いて詳細に説明す
る。第2図は1−8厘属をAt製円筒試料外側面に形成
する実施例の装置であり、(a)が模式rdwtr面図
、(b)が反応室内の模式的平面配置間を示している。Next, the f14t of the present invention will be explained in detail using one embodiment thereof. Figure 2 shows an example of an apparatus for forming 1-8 particles on the outer surface of a cylindrical sample made of At. (a) is a schematic rdwtr view, and (b) is a schematic plan view of the inside of the reaction chamber. There is.
11は反応室であり、これに共通のガス供給源に接#!
された4本のガス導入管12(121〜12番)が上S
η)ら挿入されており、下部は排気管11に接続されて
いる8反応’Mllの外部に誘導コイル14がまかれ、
内部中央に支持台15に支持されたAj製円筒試料16
が配置される。ムを製円筒試料16は電子写真用ドラム
であり1例えは外径虐0■、高さ270■、厚さ2■で
あって1表面清浄化処11JIr:行った後反応室11
内に収められる。11 is a reaction chamber, which is connected to a common gas supply source!
The four gas introduction pipes 12 (Nos. 121 to 12) that were
An induction coil 14 is placed outside the 8-reaction Mll, which is inserted into the reactor and whose lower part is connected to the exhaust pipe 11.
A cylindrical sample 16 made of Aj supported on a support stand 15 in the center of the interior
is placed. The cylindrical sample 16 is an electrophotographic drum, and has an outer diameter of 0 mm, a height of 270 mm, and a thickness of 2 mm.
It can be contained within.
各ガス導入管12にはsgJs図に示すように長手方向
に沿って5個のガス噴出口itが形成されていΦ、これ
らのガス噴出口17は、その直径がガス供給源側η1ら
順次1.5冒e 2.Qm。As shown in the sgJs diagram, each gas introduction pipe 12 has five gas jet ports it formed along the longitudinal direction Φ, and these gas jet ports 17 have diameters of 1 in order from the gas supply source side η1. .5 blasphemy 2. Qm.
2.5■、3.0−s3.5mmと大きくなっており、
〃)つその間隔1は等しく設定されていて、反応室ti
の中心に向って開口している。It is larger at 2.5■, 3.0-s3.5mm,
〃) The spacing 1 between the two is set equal, and the reaction chamber ti
It opens toward the center.
このような構成として、まず反応室IJ内を排気し、約
I X 10 Torr(1,3X10 Pm)
まで−達させる。この時At製円筒試料16はその円筒
内に設けられたヒーターにより250℃混合してガス導
入管11f経て、ガス噴出ロノ2より反応室11内へ導
入する。ここで排気系のパルプ操作により反応室11内
の圧力ヲ0.5Torrとし1次いで高周波電源のスイ
ッチを入れ反ゐ室外側に巻かれた誘導コイル14に13
.56 Ml(gの高周波電力を投入し反応17111
内にグロー放電を発生させ50Wの入力電力とする。With such a configuration, the inside of the reaction chamber IJ is first evacuated to a pressure of about I X 10 Torr (1.3 X 10 Pm).
to reach. At this time, the At cylindrical sample 16 is mixed at 250° C. by a heater provided in the cylinder, and introduced into the reaction chamber 11 from the gas injection tube 2 through the gas introduction pipe 11f. Here, the pressure inside the reaction chamber 11 is set to 0.5 Torr by pulp operation of the exhaust system, and then the high frequency power source is turned on and the induction coil 14 wound on the outside of the room is connected to the
.. A reaction of 17111
A glow discharge is generated within the battery, resulting in an input power of 50W.
この時反応Mll内には均一なプラズマが形成された。At this time, a uniform plasma was formed within the reaction Mll.
この状態で10時間、At円筒試料16にa −81属
を堆積させてから一周波電源を切り、ヒーターをOFF
として試料温度を下げ、ガス供給系を閉じて十分なパー
9を行なった後試料を取り出した。In this state, a-81 group was deposited on the At cylindrical sample 16 for 10 hours, and then the single frequency power was turned off and the heater was turned off.
The sample temperature was lowered, the gas supply system was closed, and the sample was taken out after a sufficient par 9 was performed.
形成されたa−81膜の厚さは20μでAt円筒試料1
6全体にわたってムラが無く、膜厚のバラツキは10%
以内であった。また形成されたa−8i 膜を電子写真
用感光5IlalIとして使用した時全くムラのない電
子写真像が祷られた。The thickness of the formed a-81 film was 20μ, and the At cylinder sample 1
6. There is no unevenness throughout the film, and the variation in film thickness is 10%.
It was within Furthermore, when the formed a-8i film was used as a photosensitive material for electrophotography, an electrophotographic image with no unevenness was obtained.
ガス導入管に設ける複数のガス噴出口を面積が同じでガ
ス供給al111から離れるに従って密になつように分
布させた場合にも同様の効果が得られた。Similar effects were obtained when a plurality of gas ejection ports provided in the gas introduction pipe had the same area and were distributed so as to become denser as the distance from the gas supply al111 increased.
尚、ガス導入管は上記実施例の如く反応室上方ηλら導
入することに限定されるこさなくどの部分η)ら反応層
内に導入しても良い、叉、試料形状は同筒形にa定され
ることは無くも平板であっても良いことは勿論である。Note that the gas introduction tube is not limited to introducing the gas from the upper part ηλ of the reaction chamber as in the above embodiment, but may be introduced into the reaction layer from any part η). Needless to say, the shape is not limited and may be a flat plate.
叉、上記実施例では誘導結合方式でプラズマを発生させ
たが容量結合方式であっても全く差し支えない。Furthermore, in the above embodiment, plasma was generated using an inductive coupling method, but a capacitive coupling method may also be used.
以上述べたように本発明によれは、ガス導入siを改良
して反応11円に均一なプラズマを生成することにより
、平板でない例えば円筒状試料等に対しても均一な膜を
形成し得名グロー放亀による膜形改装*七提供できる。As described above, the present invention is advantageous in that it is possible to form a uniform film even on a non-flat sample, such as a cylindrical sample, by improving the gas introduction system and generating a uniform plasma in the reaction area. Membrane shape renovation *7 can be provided by Glow Houki.
第1図は従来例の鋏置セ示す模式的断面図。
す図である。
ノド・・反応室#12(12SP−12,)・−・ガス
導入管、J j−・・排気管、14・・・誘導コイル、
lII・・・支持台、11F・−htgB円筒試料%
J7・・・ガス噴出口。
出−入代理人弁理士 鈴 江 武 彦FIG. 1 is a schematic cross-sectional view showing a conventional scissors holder. This is a diagram. Nod...Reaction chamber #12 (12SP-12,) ---Gas introduction pipe, J j-...Exhaust pipe, 14...Induction coil,
lII...Support stand, 11F・-htgB cylindrical sample%
J7...Gas outlet. Ex-input patent attorney Takehiko Suzue
Claims (1)
ロー放 :電によりこのガスを分解して前記反応室内
にお、j73れた試料表面に所定のg4を堆積する装置
において、長手方向に複数のガス噴出口を分布させたガ
ス導入管を前記反応室内に挿入し1反応室内に前記複数
のガス噴出口η)ら均一にガスを供給す金ように構成し
たことを特徴とするグロー放電による膜形麿装置。 ■) 複数のガス噴出口は、ガス供給源η1ら離れるに
従って面積が大きくなるように、η)っ等間隔で形成さ
れている特lFF請求の範囲第1項記載のグロー放電に
よる膜形成装置。 (37*数のガス噴出口は1面積か同じで、η)つガス
供給Sから離れるに従って間隔が大きくなΦようlこ形
成されているaffnt求の範囲第1項記載のグミ−放
電にょ61[i形成装m。 ((転)試料は円筒状であって反応意中央部に配置され
、ガス導入管はこの試料Jk取り囲むように複数本配置
される特許請求の範囲第1項記載のグロー放電化よる膜
形式装置。(1) Pfr'ij! in the reaction chamber. A plurality of gas ejection ports were distributed in the longitudinal direction in an apparatus that introduced a gas of 1. A film-forming apparatus using glow discharge, characterized in that a gas introduction pipe is inserted into the reaction chamber to uniformly supply gas from the plurality of gas jet ports η) into one reaction chamber. (2) The film forming apparatus using glow discharge according to claim 1, wherein the plurality of gas ejection ports are formed at equal intervals of η) such that the area increases as the distance from the gas supply source η1 increases. (37 * number of gas ejection ports have one area or the same area, η) The range of affnt required is formed by Φ, the distance from which increases as the distance from the gas supply S increases. [iformation m. (Membrane type device by glow discharge according to claim 1, wherein the sample is cylindrical and placed in the center of the reaction chamber, and a plurality of gas introduction tubes are placed so as to surround the sample Jk. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12900481A JPS5830125A (en) | 1981-08-18 | 1981-08-18 | Apparatus for film formation using glow discharge |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12900481A JPS5830125A (en) | 1981-08-18 | 1981-08-18 | Apparatus for film formation using glow discharge |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5830125A true JPS5830125A (en) | 1983-02-22 |
Family
ID=14998767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12900481A Pending JPS5830125A (en) | 1981-08-18 | 1981-08-18 | Apparatus for film formation using glow discharge |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5830125A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62135361A (en) * | 1985-12-10 | 1987-06-18 | 永大産業株式会社 | Manufacture of decorative material |
FR2705690A1 (en) * | 1993-04-22 | 1994-12-02 | Balzers Hochvakuum | Installation provided with a gas inlet device, for the treatment of substrates in a vacuum container, and method for this treatment. |
US6158382A (en) * | 1996-12-12 | 2000-12-12 | Canon Kabushiki Kaisha | Method for forming a deposited film by plasma chemical vapor deposition and apparatus for forming a deposited film by plasma chemical vapor deposition |
-
1981
- 1981-08-18 JP JP12900481A patent/JPS5830125A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62135361A (en) * | 1985-12-10 | 1987-06-18 | 永大産業株式会社 | Manufacture of decorative material |
FR2705690A1 (en) * | 1993-04-22 | 1994-12-02 | Balzers Hochvakuum | Installation provided with a gas inlet device, for the treatment of substrates in a vacuum container, and method for this treatment. |
CH687258A5 (en) * | 1993-04-22 | 1996-10-31 | Balzers Hochvakuum | Gas inlet arrangement. |
US5622606A (en) * | 1993-04-22 | 1997-04-22 | Balzers Aktiengesellschaft | Gas inlet arrangement |
DE4412541B4 (en) * | 1993-04-22 | 2011-03-10 | Oerlikon Trading Ag, Trübbach | Gas inlet system and method |
US6158382A (en) * | 1996-12-12 | 2000-12-12 | Canon Kabushiki Kaisha | Method for forming a deposited film by plasma chemical vapor deposition and apparatus for forming a deposited film by plasma chemical vapor deposition |
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