JPS57120335A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57120335A JPS57120335A JP687481A JP687481A JPS57120335A JP S57120335 A JPS57120335 A JP S57120335A JP 687481 A JP687481 A JP 687481A JP 687481 A JP687481 A JP 687481A JP S57120335 A JPS57120335 A JP S57120335A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- aluminum
- substrate
- triethyl aluminum
- thermal decomposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 abstract 3
- 239000012159 carrier gas Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 150000002430 hydrocarbons Chemical class 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 150000002894 organic compounds Chemical group 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a uniform thin film for the rugged surface of a substrate and to eliminate the contamination of the surface of the substrate by employing a thin metallic film formed by thermal decomposition of organic compound as an electrode material and a wiring material provided in a semiconductor device. CONSTITUTION:Liquid triethyl aluminum 1 is filled in a bubble unit 2 having an external heater 3 and is bubbled with carrier gas 4 such as Ar while heating it at 80-100 deg.C by a heater 3. Then, a mixture gas 5 containing gas triethyl aluminum having produced saturated vapor pressure is introduced into a growing chamber 6, is heated and decomposed at 300-400 deg.C with a high frequency coil 6. In this manner, aluminum atoms produced by the thermal decomposition are accumulated on a semiconductor substrate 9 disposed on a wafer holder 8 to form a thin aluminum film. Thereafter, a mixture gas 10 containing undecomposed gas triethyl aluminum and hydrocarbon and carrier gas 4 of other thermally decomposed product is exhausted via an exhaust system 11 out of the chamber 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP687481A JPS57120335A (en) | 1981-01-19 | 1981-01-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP687481A JPS57120335A (en) | 1981-01-19 | 1981-01-19 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57120335A true JPS57120335A (en) | 1982-07-27 |
Family
ID=11650366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP687481A Pending JPS57120335A (en) | 1981-01-19 | 1981-01-19 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57120335A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5913344A (en) * | 1982-07-14 | 1984-01-24 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1981
- 1981-01-19 JP JP687481A patent/JPS57120335A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5913344A (en) * | 1982-07-14 | 1984-01-24 | Fujitsu Ltd | Manufacture of semiconductor device |
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