JPS5447568A - Deposition method - Google Patents

Deposition method

Info

Publication number
JPS5447568A
JPS5447568A JP11337377A JP11337377A JPS5447568A JP S5447568 A JPS5447568 A JP S5447568A JP 11337377 A JP11337377 A JP 11337377A JP 11337377 A JP11337377 A JP 11337377A JP S5447568 A JPS5447568 A JP S5447568A
Authority
JP
Japan
Prior art keywords
wafers
jig
reaction tube
plates
erected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11337377A
Other languages
Japanese (ja)
Inventor
Toshiaki Kitahara
Keizo Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11337377A priority Critical patent/JPS5447568A/en
Publication of JPS5447568A publication Critical patent/JPS5447568A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To avert the production of holes in wafers and eliminate the reverse dielectric strength defects of the semiconductor devices using these by heating the semiconductor wafers and impurity sources in an O2 atmosphere of a reduced pressure state of a high degree of vacuum and depositing impurities in wafers.
CONSTITUTION: A multiplicity of Si wafers 2 are erected on a wafer screening jig 1 made of quart and hollow circular support plates 3 are erected on the jig 1, by being positioned at both ends of the wafers 2. Next, an impurity source stage 4 is put on across these support plates 3 and BN plates 5 being impurity sources are place thereon. Next, the jig 1 is inserted into the entrance low temperature area of a quartz reaction tube 6 having been heated by the heating elements 7 provided on the outside, the tube is sealed with a cap 8 and O2 gas is fed into the reaction tube 6 through feed ports 9 thru 10 to be substituted with the N2 gas in the inside. Thereafter, the inside of the reaction tube 6 is reduced down to 0.02 to 0.08torr, thence the jig 1 is moved to the high temperature area in the reaction tube 6 and in this state the B in the BN plates 5 is deposited on the wafers 2
COPYRIGHT: (C)1979,JPO&Japio
JP11337377A 1977-09-22 1977-09-22 Deposition method Pending JPS5447568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11337377A JPS5447568A (en) 1977-09-22 1977-09-22 Deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11337377A JPS5447568A (en) 1977-09-22 1977-09-22 Deposition method

Publications (1)

Publication Number Publication Date
JPS5447568A true JPS5447568A (en) 1979-04-14

Family

ID=14610634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11337377A Pending JPS5447568A (en) 1977-09-22 1977-09-22 Deposition method

Country Status (1)

Country Link
JP (1) JPS5447568A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007252911A (en) * 2006-03-22 2007-10-04 Groz-Beckert Kg Needle holder for sewing machine

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007252911A (en) * 2006-03-22 2007-10-04 Groz-Beckert Kg Needle holder for sewing machine

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