JPS63308911A - Low pressure vapor growth equipment - Google Patents

Abstract

PURPOSE:To obtain a low pressure vapor growth equipment improved in the uniformity of a thin film in batch, by providing a furnace tube with a plurality of gas feeding inlets and vacuum discharge vents. CONSTITUTION:A vacuum pump 4 and a furnace tube 1 are connected with a plurality of vacuum exhaust vents 3, 3..., and along the lengthwise direction of the furnace tube 1, a plurality of gas feeding inlets 2, 2... are arranged. At the time of vapor growth, gas is introduced from the plurality of gas feeding inlets 2, 2..., and a thin film is grown on a semiconductor substrate in the furnace tube 1. In the course of this process, by introducing gas from a plurality of vacuum exhaust vents 3, the gas atmosphere in the furnace tube 1 is made uniform, and a film excellent in uniformity in batch can be grown. The number of vacuum exhaust vents, vacuum pumps, and gas feeding inlets are freely selected, and the positions of vacuum discharge vents and gas feeding inlets also can be freely selected. Thereby, when the furnace tube is made large because the diameter of a wafer is made large, the gas atmosphere in the furnace tube can be made uniform, and the uniformity of thin film in batch can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field 1] The present invention relates to a semiconductor device manufacturing apparatus, and particularly to a low pressure vapor phase growth apparatus.

[Conventional technology] Conventionally, low pressure vapor phase growth equipment used for manufacturing semiconductor devices, etc.
Gas was introduced through one waste introduction port, and this gas was exhausted through one vacuum exhaust port.

[Problems to be Solved by the Invention] In the reduced pressure vapor phase growth apparatus described above, when the furnace core tube becomes larger due to the increase in the size of the wafer, the thin film on the semiconductor substrate placed near the gas introduction date and the vacuum There is a drawback that the growth rate and film quality are different from those of the thin film near the exhaust port or on the semiconductor substrate at other locations.

An object of the present invention is to provide a reduced pressure vapor phase growth apparatus that improves the uniformity of thin films within a batch when the furnace core tube is enlarged by increasing the uniformity of the gas atmosphere within the furnace core tube. .

[Means for Solving the Problem 1] The present invention provides a low-pressure vapor phase growth apparatus for growing a thin film on a semiconductor substrate by keeping a furnace core tube in a vacuum with a vacuum pump and introducing gas into the furnace core tube. This is a reduced pressure vapor phase growth apparatus characterized in that a core tube is provided with a plurality of gas inlets and a plurality of vacuum exhaust ports.

[Example] Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a longitudinal sectional view of one embodiment of the present invention.

In the reduced pressure vapor phase growth apparatus of this embodiment, a vacuum pump 4 and a furnace core tube 1 are connected through a plurality of vacuum exhaust ports 3, 3, . . . A plurality of gas inlets 2, 2... are provided. In the embodiment, during vapor phase growth, a thin film is grown on the semiconductor substrate in the furnace core tube 1 by introducing gas from a plurality of gas inlet ports 2, 2, . . . .

During this vapor phase growth, gas is introduced through a plurality of gas inlets 2 and exhausted through a plurality of vacuum exhaust ports 3, thereby making the gas atmosphere inside the furnace core tube 1 uniform and achieving good uniformity within the batch. Can grow membranes.

In the embodiments described above, the number of vacuum exhaust ports, vacuum pumps, and gas introduction ports can be freely selected, and the positions of the vacuum exhaust ports and gas introduction ports can also be freely selected.

[Effects of the Invention] As explained above, according to the present invention, even though the furnace core tube becomes larger due to larger diameter wafers, by making the gas atmosphere in the furnace core tube uniform, This has the effect of improving the uniformity of the thin film.

[Brief explanation of the drawing]

FIG. 1 is a schematic sectional view showing an embodiment of the present invention.

Claims (1)

[Claims] (1) In a reduced pressure vapor phase growth apparatus in which a furnace core tube is kept in a vacuum by a vacuum pump and a gas is introduced into the furnace core tube to grow a thin film on a semiconductor substrate, a plurality of gases are introduced into the furnace core tube. A reduced pressure vapor phase growth apparatus characterized by having a port and a plurality of vacuum exhaust ports.