GB1380511A - Vapour processing apparatus - Google Patents

Vapour processing apparatus

Info

Publication number
GB1380511A
GB1380511A GB2096073A GB2096073A GB1380511A GB 1380511 A GB1380511 A GB 1380511A GB 2096073 A GB2096073 A GB 2096073A GB 2096073 A GB2096073 A GB 2096073A GB 1380511 A GB1380511 A GB 1380511A
Authority
GB
United Kingdom
Prior art keywords
gas
partitions
reaction
inlets
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2096073A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1380511A publication Critical patent/GB1380511A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C30B31/106—Continuous processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

1380511 Continuous furnace; preventing ingress of air INTERNATIONAL BUSINESS MACHINES CORP 2 May 1973 [19 June 1972] 20960/73 Heading F4B [Also in Division H1] A gaseous-reaction tube 10, e.g. for use in the oxidation, diffusion or etching of semi-conductor wafers 24 which move successively through entrance, reaction and exit zones of the tube, includes aligned, longitudinal partitions 12, 14 at its entrance and exit zones, and gas inlets 16, 18 for introducing a gas under the two partitions 12, 14. Reaction gas is introduced to the uniformly heated reaction zone through a central inlet 20 and the flow of gas into the inlets 16, 18 is controlled so that back pressure develops beneath the partitions 12, 14 and some of the introduced gas flows out into the edge of the central reaction zone, causing the reaction gas flow to be deflected above the partitions 12, 14 on its way to exhaustion from the ends of the tube 10. A well defined reaction zone is obtained in this manner. Down-turned extensions of the partitions 12, 14 may be provided as shown to restrict flow of gas from beneath the partitions 12, 14 into the reaction zone, and similar extensions at the opposite ends of the partitions may restrict escape of gas out of the tube 10. The gas introduced into inlets 16, 18 may be inert, forming a purge gas, but sequential processing may be obtained if different reaction gases are fed into the inlets 16, 18 and 20.
GB2096073A 1972-06-19 1973-05-02 Vapour processing apparatus Expired GB1380511A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26391572A 1972-06-19 1972-06-19

Publications (1)

Publication Number Publication Date
GB1380511A true GB1380511A (en) 1975-01-15

Family

ID=23003786

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2096073A Expired GB1380511A (en) 1972-06-19 1973-05-02 Vapour processing apparatus

Country Status (5)

Country Link
US (1) US3790404A (en)
JP (1) JPS5551331B2 (en)
DE (1) DE2327351A1 (en)
FR (1) FR2189874B1 (en)
GB (1) GB1380511A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2282871A (en) * 1993-10-12 1995-04-19 Air Prod & Chem Inert gas delivery for reflow solder furnaces

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2718184C2 (en) * 1977-04-23 1982-10-14 Philips Patentverwaltung Gmbh, 2000 Hamburg Method and apparatus for the continuous coating of an elongated body
JPS5862489A (en) * 1981-10-07 1983-04-13 株式会社日立製作所 Soft landing device
JPS59156996A (en) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd Method and device for manufacturing crystalline film of compound
US4504526A (en) * 1983-09-26 1985-03-12 Libbey-Owens-Ford Company Apparatus and method for producing a laminar flow of constant velocity fluid along a substrate
US4807561A (en) * 1986-05-19 1989-02-28 Toshiba Machine Co., Ltd. Semiconductor vapor phase growth apparatus
US5393563A (en) * 1991-10-29 1995-02-28 Ellis, Jr.; Frank B. Formation of tin oxide films on glass substrates
JP3042659B2 (en) * 1993-07-06 2000-05-15 信越半導体株式会社 Method for oxidizing semiconductor wafer
US5563095A (en) * 1994-12-01 1996-10-08 Frey; Jeffrey Method for manufacturing semiconductor devices
WO1997049132A1 (en) * 1996-06-20 1997-12-24 Jeffrey Frey Light-emitting semiconductor device
DE102005045582B3 (en) 2005-09-23 2007-03-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Apparatus and method for continuous vapor deposition under atmospheric pressure and their use

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623854A (en) * 1968-08-28 1971-11-30 Owens Illinois Inc Vapor treatment of containers with finish air barrier
GB1307216A (en) * 1969-04-23 1973-02-14 Pilkington Brothers Ltd Treating glass
US3688737A (en) * 1969-11-04 1972-09-05 Glass Container Mfg Inst Inc Vapor deposition apparatus including air mask
BE760041A (en) * 1970-01-02 1971-05-17 Ibm GAS MASS TRANSFER METHOD AND APPARATUS

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2282871A (en) * 1993-10-12 1995-04-19 Air Prod & Chem Inert gas delivery for reflow solder furnaces
GB2282871B (en) * 1993-10-12 1997-07-09 Air Prod & Chem Inert gas delivery for reflow solder furnaces

Also Published As

Publication number Publication date
FR2189874A1 (en) 1974-01-25
FR2189874B1 (en) 1977-09-02
DE2327351A1 (en) 1974-01-03
JPS4944668A (en) 1974-04-26
US3790404A (en) 1974-02-05
JPS5551331B2 (en) 1980-12-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee