JPS6163023A - Heat treating device for thin plate type substance to be treated - Google Patents
Heat treating device for thin plate type substance to be treatedInfo
- Publication number
- JPS6163023A JPS6163023A JP18557084A JP18557084A JPS6163023A JP S6163023 A JPS6163023 A JP S6163023A JP 18557084 A JP18557084 A JP 18557084A JP 18557084 A JP18557084 A JP 18557084A JP S6163023 A JPS6163023 A JP S6163023A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- space
- treated
- intermediate plate
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 title abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 43
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 33
- 239000000463 material Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 32
- 239000007789 gas Substances 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 9
- 238000011282 treatment Methods 0.000 description 7
- 238000004380 ashing Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 208000037998 chronic venous disease Diseases 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体ウェハーなどの薄板状被処理物を加熱し
てその表面に熱処理を施すための加熱処理装置に関する
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a heat treatment apparatus for heating a thin plate-shaped workpiece such as a semiconductor wafer to heat-treat the surface thereof.
（従来の技術）
予め加熱された半導体ウェハー上に膜杉或のための元素
を含んだ反応ガスを送り込み、半４体つ工へ−上での熱
化学反応を利用して所望の膜を形成するようにしたＣ
Ｖ Ｄ （Ｃｈｅｍｉｃａｌ ＶａｐｏｒＱ＠ｐａｓｉ
ｔｏｎ）処理１表面にリン、ホウ素、金などを塗布した
半導体ウェハーを加熱することで、上記元素を半導体ウ
ェハー内部にドーピングせしめるようにした拡散処理、
或いは半導体ウェハー表面に残った有機物マスクと酸Ｊ
（オゾン）とを高温下において反応せしめ、有機物マス
クを消失するようにしたアッシング（クリーニング）処
理を行う装置として、従来から各種の加８装置が提供さ
れている。(Prior art) A reaction gas containing elements for film formation is sent onto a pre-heated semiconductor wafer, and a desired film is formed using a thermochemical reaction above the semi-circular structure. C
V D (Chemical VaporQ@pasi
ton) Treatment 1 A diffusion treatment in which the semiconductor wafer whose surface is coated with phosphorus, boron, gold, etc. is heated to dope the above elements into the inside of the semiconductor wafer,
Or the organic mask and acid J remaining on the semiconductor wafer surface.
Conventionally, various types of ashing (cleaning) devices have been provided as devices for performing an ashing (cleaning) process in which an organic substance mask is removed by reacting with (ozone) at high temperatures.
この加熱装置として最も一般的なものは、ＭＡ置きの石
英反応管の周囲にヒータを配設し１石英反応管内に多数
の半４体ウェハーを収納し、ヒータにて半導体ウェハー
を加熱するとともに反応管内に所定のガスを供給するよ
うにした装置であるが、この装置はスペース的に不利で
あるため、本出願人は先に特開昭５９−３９３４１号と
して縦型の処理チャンバーを用いた加熱処理装置を提案
している。The most common type of heating device is a heater placed around a quartz reaction tube placed in MA, a large number of semi-quadramid wafers housed in one quartz reaction tube, and the semiconductor wafers heated by the heater and reacted. This device is designed to supply a predetermined gas into the tube, but since this device is disadvantageous in terms of space, the applicant previously proposed a heating method using a vertical processing chamber in Japanese Patent Application Laid-Open No. 59-39341. We are proposing a processing device.
（発明が解決しようとする問題点）
半導体ウェハーなどを加熱する装置として上記の他にも
各種装置が提案されているが、いずれの装置にあっても
、加熱中に半導体ウェハーなどの薄板状被処理物を枠体
或いはアーム等の部材によって保持しており、被処理物
は何らかの部材にその一部が接触した状態で加熱処理さ
れる。このように一部が何らかの部材に接触した状態で
被処理物を加熱処理すると、当該一部が十分に加熱処理
されないこととなる。(Problems to be Solved by the Invention) In addition to the above-mentioned devices, various devices have been proposed for heating semiconductor wafers, etc., but in any of these devices, the thin plate-like covering of semiconductor wafers etc. The object to be processed is held by a member such as a frame or an arm, and the object to be processed is heat-treated while a part of the object is in contact with some member. If the object to be processed is heat-treated in a state where a part thereof is in contact with some member in this way, the part will not be sufficiently heat-treated.
また被処理物を均一に加熱処理するには被処理物又は加
熱装置の一方を回転移ｆｈ等をさせっつ処理することと
なるが、このための装置を更に付加しなければならず、
装置全体の複雑化、小型化を招くという問題がある。Furthermore, in order to uniformly heat-treat the object to be processed, one of the object to be processed or the heating device must be subjected to rotational transition fh, etc., but an additional device for this purpose must be added.
There is a problem in that the entire device becomes more complicated and smaller.
（問題点を解決するための手段）
上記従来の問題点を解決すへ〈未発１１は、加熱処理装
置の本体内に、−［、板、中板及びド扱を水を状態で上
下方向に毛ね、上根と中板との間にはＢ板状被処理物の
収納空間を、中板と下板との間にはガス供給空間をそれ
ぞれ形成するとともに、中板には前記収納空間とガス供
給空間とを連通ずる貫通孔を斜めに穿設し、ガス供給空
間に供給されたガスを前記貫通孔を介して収納空間内に
噴出せしめ、この噴出ガスによって被処理物を収納空間
内で浮かした状７ｇで［１，つ回転させつつ加熱処理を
施すようにした。(Means for Solving the Problems) To solve the above-mentioned problems of the conventional method, the method is as follows. In addition, a storage space for the B plate-shaped processed material is formed between the upper root and the middle plate, a gas supply space is formed between the middle plate and the lower plate, and the storage space is formed in the middle plate. A through hole is diagonally drilled to communicate the space with the gas supply space, and the gas supplied to the gas supply space is ejected into the storage space through the through hole, and the ejected gas transports the objects to be processed into the storage space. Heat treatment was carried out with 7 g of the material floating in the container while rotating it once.
（実施例） 以下に本発明の実施例を添付図面に基づいて説明する。(Example) Embodiments of the present invention will be described below based on the accompanying drawings.
第１図は未発明に係る加熱処理装置を拡散処理装置に応
用した例を示す概略図であり、この拡散処理装置（１）
は半導体ウェハーの収納カセット（２）、搬送ベルト（
３）・・・、これら搬送ベルト（３）・・・間に配置さ
れる出し入れ部材（４）、（４）及びこの出し入れ部材
（４）、（４）の側方に設置される加熱処理装！ （５
） 、（５）によって主要なる部分が構成される。FIG. 1 is a schematic diagram showing an example in which an uninvented heat treatment device is applied to a diffusion treatment device, and this diffusion treatment device (1)
is a semiconductor wafer storage cassette (2), a conveyor belt (
3) ..., these conveyor belts (3) ..., the loading/unloading members (4), (4) arranged between them, and the heating treatment equipment installed on the sides of the loading/unloading members (4), (4). ! (5
) and (5) constitute the main part.
収納カセット（２）は対向する側板（６）、（８）を棒
材（８）、（８）で連結してなり、ｒ端を７ングル状の
家持部材（７）に位置されている。＠板（８）、（６）
の内側面には多数の横溝が形成され、これらｗ１溝に半
導体ウェハー（９）の端部を掛市することで、半導体ウ
ェハー（９）・・・が収納カセット（２）内に上下方向
に離間して複数枚保持される。また収納カセット（２）
は搬送ベルト（３）を跨ぐように設けられ［Ｌつ図示し
ないシリンダユニット等により支持部材な介してシ１降
動目在とされている。而して収納カセット（２）が側板
（８）、（８）の内側面の横溝間隔に応じて一段づつ下
降することで、収納カセット（２）内の半導体ウェハー
（９）は下段のものから順に搬送ベルト（３）上に送り
出され、出し入れ部材（４）の位置まで搬送される。The storage cassette (2) is formed by connecting side plates (6) and (8) facing each other with rods (8) and (8), and the r end is located on a seven-angle shaped home member (7). @ Board (8), (6)
A large number of horizontal grooves are formed on the inner surface of the storage cassette (2), and by hanging the ends of the semiconductor wafers (9) in these W1 grooves, the semiconductor wafers (9) are vertically placed inside the storage cassette (2). A plurality of sheets are held at a distance. Also storage cassette (2)
is provided so as to straddle the conveyor belt (3) [L] is used as a descending index via a support member such as a cylinder unit (not shown). As the storage cassette (2) is lowered one step at a time according to the width of the horizontal grooves on the inner surfaces of the side plates (8), the semiconductor wafers (9) in the storage cassette (2) are separated from those in the lower row. They are sequentially sent out onto the conveyor belt (3) and conveyed to the position of the loading/unloading member (4).
出し入れ部材（４）は回転自在な軸部（ｌＯ）にアーム
（１１）を固着してなり、前後方向、左右方向及び上下
方向にシリンダユニット等により移動ｄｆ鋤とされてい
る。The loading/unloading member (4) has an arm (11) fixed to a rotatable shaft (lO), and is a df plow that can be moved in the front-rear direction, left-right direction, and up-down direction by a cylinder unit or the like.
一方、加熱処理装２ｔ（，５）は第２図の分解斜視図及
び第４図の要？＄縦断面図にも示すように略々ボックス
状をなす本体（１２）の上部及び下部に加熱装置（＋３
） 、 （＋４）を配ｔしている。加熱装置（１３）は
ホックス状ケース（＋５）に凹状反射板（＋６）を取り
付け、この凹状反射板（１６）よりも下方に紫外線ラン
プ（１７）・・・をモ行に配設し、加ｆＳ装置（１４）
もボックス状ケース（１Ｂ）に凹状反射板（１３）を取
り付け、この凹状反射板（１９）よりも上方に紫外線ラ
ンプ（２０）・・・を１を行に配設している。そして凹
状反射板（＋ｅ）、（＋９）とケース（１５）、（１８
）との間に形成される空間をパイプ（２１）でつなぎ、
例えば−ヒカの加執装置（１３）に取り付けたパイプ（
２２）から凹状反射板（１６）とケース（１５）にて区
画される空間に冷却水を供給し、この冷却水をパイプ（
２１）を介して凹状反射板（１９）とケース（１８）に
て区画される空間に導き、パイプ（２３）を介して外部
に排出する。而して、紫外線ランプ（＋７） 、（２ｏ
）の冷却を有効に行うことができる。また、加熱処理装
置（５）を組立てるに際し、上部の紫外線ランプ（１７
）・・・を左右方向に配列する場合には下部の紫外線ラ
ンプ（２０）・・・を前後方向に配列するよにし、紫外
線ランプ（１７）・・・、 （２２）・・・が互いに直
交する方向に配列し、加熱を均等になすようにすること
が好ましい。On the other hand, the heat treatment equipment 2t (, 5) is shown in the exploded perspective view in FIG. 2 and in the main part in FIG. As shown in the vertical cross-sectional view, heating devices (+3
), (+4) are placed. The heating device (13) has a concave reflective plate (+6) attached to a hook-shaped case (+5), and ultraviolet lamps (17) are arranged in rows below the concave reflective plate (16). fS device (14)
A concave reflector (13) is attached to a box-like case (1B), and ultraviolet lamps (20) are arranged in rows 1 above the concave reflector (19). And concave reflectors (+e), (+9) and cases (15), (18
), connect the space formed between them with a pipe (21),
For example - the pipe attached to the Hika's control device (13) (
Cooling water is supplied from the concave reflector (16) and the case (15) from the pipe (
21) into a space defined by a concave reflecting plate (19) and a case (18), and is discharged to the outside via a pipe (23). Therefore, ultraviolet lamp (+7), (2o
) can be effectively cooled. Also, when assembling the heat treatment device (5), the upper ultraviolet lamp (17)
)..., in the left-right direction, the lower UV lamps (20)... should be arranged in the front-back direction, and the UV lamps (17)..., (22)... should be orthogonal to each other. It is preferable to arrange them in the same direction as to heat them evenly.
更に上下の加８装２１（１３）、（＋４）の間の本体（
１２）内には第３図に示す如くフランジ部（１２ａ）を
内方へ突出し、このフランジ部（１２ａ）の上面に下板
（２０を、この下板（２０の上面に中板（２５）を、こ
の中板（２５）の上面に上板（２６）をそれぞれ水平状
態で重ね合わせている。そして、前記フランジ部（＋２
ａ）にはガス供給用の通路（２７）、（２７）が穿設さ
れ、中板（２５）と下板（２４）との間にはガス供給用
の通路（２７）、（２７）とつながるガス供給用空間（
！ｌｚ）が形成される。また、上板（２６）と中＆ （
２５）との間には半導体ウェハー（９）の収納空間（Ｓ
２）が形成される。Furthermore, the main body (
12) has a flange part (12a) protruding inward as shown in FIG. The upper plate (26) is superposed horizontally on the upper surface of the middle plate (25).Then, the flange portion (+2
Gas supply passages (27), (27) are bored in a), and gas supply passages (27), (27) are provided between the middle plate (25) and the lower plate (24). Connected gas supply space (
! lz) is formed. Also, the top plate (26) and the middle & (
25), there is a storage space (S) for the semiconductor wafer (9).
2) is formed.
この収納空間（Ｓ２）を形成する中板（２５）には一端
部から中心部に向って＋ｉｉｊ記出し入れ部材（４）の
アーム（１１）が侵入する［１１広の溝（２８）と、ガ
ス供給用空間（Ｓ＋）と収納空間（Ｓｔ）を連通する貫
通孔（２９）・・・を穿設している０貫通孔（２８）・
・・は中板の平面図である第４図に示す如く、中板（２
５）に形成した円形凹部（２５ａ）の中心を中心点とし
た少なくとも１つの円周上に等間隔離間して設けられ、
１つ各貫通孔（２３）・・・はそれぞれが属する円周の
接線方向を基準として同一方向に等角度傾斜して穿設さ
れるとともに、収納空間（Ｓ２）側の開口部がガス供給
空間（Ｓｌ）側の開口部よりも内側に位置している。The middle plate (25) forming this storage space (S2) has a wide groove (28) into which the arm (11) of the +iij entry/exit member (4) enters from one end toward the center. A through-hole (28) that connects the supply space (S+) and storage space (St) with a through-hole (29)...
... is a plan view of the middle plate, as shown in Figure 4, the middle plate (2
5) are provided at equal intervals on at least one circumference with the center of the circular recess (25a) formed in 5) as the center point,
Each through hole (23)... is bored at an equal angle in the same direction based on the tangential direction of the circumference to which it belongs, and the opening on the storage space (S2) side is the gas supply space. It is located inside the opening on the (Sl) side.
而して、ガス供給通路（２７） 、（２７）からガス供
給用空間（Ｓ ＋）内に入ったガスは貫通孔（２９）・
・・を介して収納空間（ＳＪ内へ噴出される。そして収
納空間（Ｓｔ）内への噴出ガスは貫通孔（２９）・・・
が前記した如さ斜め孔となっているため旋回流となり、
収納空間（Ｓｔ）内の半導体ウェハー（９）を浮き上が
らせた状態で回転せしめる。Thus, the gas entering the gas supply space (S+) from the gas supply passages (27) and (27) flows through the through holes (29) and (27).
The gas is ejected into the storage space (SJ) through the through holes (29)...
As mentioned above, since it is an oblique hole, it becomes a swirling flow,
The semiconductor wafer (9) in the storage space (St) is rotated in a raised state.
尚、前記上板（２Ｂ）、中板（２５）及び下板（２４）
はいずれも合成石英をその構成材料とし、半導体つエム
−（９）を加熱処理するにあたって汚染が生じないよう
にしている。In addition, the upper plate (2B), the middle plate (25) and the lower plate (24)
Both use synthetic quartz as their constituent material to prevent contamination during heat treatment of the semiconductor M-(9).
以上の構成からなる拡散装置の作用を以下に述べる。こ
こで本実施例にあっては加熱処理装置（５） 、（５）
を上流側と下流側に配置し、上流側の加熱処理装！ （
５）にあっては上部又は下部の加熱装置（１３）、（１
４）の一方のみを使用し、半導体ウェハー（９）を例え
ば５００℃程度の中間温度まで加熱し、下流側の加熱処
理装置にあっては上部及び下部の加熱装’ｌ （１３）
、（１４）の双方を使用し半導体ウェハー（３）を例
えばｔｏｏｏ℃程度まで加熱するものとする。また、カ
セット（２）内に収納される半４体ウェハー（９）の表
面は選択的にマスクで覆われて、しかもその上に拡散材
料が均一に被着されている。The operation of the diffusion device having the above configuration will be described below. Here, in this example, heat treatment equipment (5), (5)
are placed on the upstream and downstream sides, and the upstream heat treatment equipment! (
5), the upper or lower heating device (13), (1
4) to heat the semiconductor wafer (9) to an intermediate temperature of, for example, about 500°C, and in the downstream heat treatment equipment, use only one of the upper and lower heating equipment (13).
, (14) are used to heat the semiconductor wafer (3) to, for example, about too much degrees centigrade. Further, the surface of the half-quad wafer (9) housed in the cassette (2) is selectively covered with a mask, and the diffusion material is uniformly deposited thereon.
先ず、出し入れ部材（０のアーム（ｌりが上流側の搬送
ベルト（３）側に回動し、且つ搬送ベルト・（３）間に
位置している状態においで、カセット（２）丙に収納さ
れた半導体ウェハ−（９）のうち最下段にあるものが搬
送ベル）（３）により、出し入れ部材（０のアーム（１
１）上まで運ばれる。そして半導体ウニ／％ −（９）
を真空’Ｊｉ着する機能を有するアーム（１１）上に半
導体ウェハー（９）が１！ｌされ。First, with the arm of the loading/unloading member (0) rotated toward the upstream conveyor belt (3) and located between the conveyor belt (3), store it in the cassette (2). Among the semiconductor wafers (9) that have been loaded, the one at the bottom is transferred to the arm (1) of the loading/unloading member (0) by the conveyor bell
1) To be carried to the top. And semiconductor sea urchin/% - (9)
A semiconductor wafer (9) is placed on the arm (11) which has the function of attaching the semiconductor wafer (1!) in a vacuum. I have been treated.
アーム（１１）に真空吸着されたならば出し入れ部材（
０を上昇せしめ、且つアーム（ｌりを加熱処理装置（４
）側に回動せしめる。而る後、アーム（１１）上に半導
体ウェハー（９）を載せたまま出し入れ部材（０を加熱
処理装置（５）の溝（２８）から侵入せしめ、アーム（
１１）の真空引きを解除せしめてから。If the arm (11) is vacuum-adsorbed, the loading/unloading member (
0 is raised, and the arm (1) is heated to a heat treatment device (4
) side. After that, with the semiconductor wafer (9) placed on the arm (11), the loading/unloading member (0) is inserted through the groove (28) of the heat treatment device (5), and the arm (
After releasing the vacuum in step 11).
出し入れ部材（４）を下降して半導体ウェハー（９）を
収納空間（Ｓ−ｔ）内に収める。The loading/unloading member (4) is lowered to store the semiconductor wafer (9) in the storage space (S-t).
この後、出し入れ部材（０を後退させ、収納空間（Ｓ２
）への入口となる開口を閉じ加熱処理を施す、この加熱
処理は前記した如く半導体ウェハー（８）を収納空間（
ＳＯ内で浮かした状態、つまり他の部材に非接触となっ
た状！懲で回転させつつ行う。After this, move the loading/unloading member (0) backward, and then move the storage space (S2
) is closed and a heat treatment is applied to the semiconductor wafer (8) as described above.
It is floating inside the SO, that is, it is not in contact with other parts! Do it while rotating as punishment.
そして所定時間５００℃程度で半導体ウェハー（９）を
加熱したならば、再びアーム（１１）を収納空間（Ｓｚ
）内に座し入れ、半導体ウェハー（９）を収納室ＩＩＪ
Ｉ（Ｓ２）から取り出し、更にアーム（１１）を中間の
搬送ベルト（３）方向に回動せしめ出し入れ部材（４）
を下降せしめて半導体ウェハー（９）を搬送ベルト（３
）上に移す。After heating the semiconductor wafer (9) at about 500°C for a predetermined time, the arm (11) is placed in the storage space (Sz
) and place the semiconductor wafer (9) in storage chamber IIJ.
Take it out from I (S2), further rotate the arm (11) in the direction of the intermediate conveyor belt (3), and then remove and remove the member (4).
is lowered and the semiconductor wafer (9) is transferred to the conveyor belt (3).
) move on top.
この後、前記同様に下流側に配置した出し入れ装置（４
）により５００℃程度まで加熱された半導体ウェハー（
９）を下流側の加熱処理！！ ２１（５）内に入れ、前
記同様の操作で１０００℃程度まで加熱する。After this, the loading/unloading device (4
Semiconductor wafer (
9) Downstream heat treatment! ! 21 (5) and heated to about 1000°C in the same manner as above.
斯る加熱により、半導体ウェハー（３）表面に塗布され
た拡散材料は該表面のうちマスクで苧われていない部分
に拡散する。特に本実施例にあっては半導体ウェハー（
９）を−日一中１■温度まで加熱するようにしたため、
拡散を均−且つ確実に行うことができる。Due to such heating, the diffusion material applied to the surface of the semiconductor wafer (3) is diffused into the portion of the surface that is not covered by the mask. In particular, in this example, the semiconductor wafer (
9) was heated to a temperature of 1 cm all day long,
Diffusion can be performed evenly and reliably.
尚、実施例にあっては、半導体ウェハーに拡散処理を施
す場合について述へたが本発明に係る加熱処理装置はこ
れに限らず、ＣＶＤ処理、クリーニング、アッシング等
各種加熱処理に応用でき。Although the embodiments have been described with reference to the case where semiconductor wafers are subjected to diffusion treatment, the heat treatment apparatus according to the present invention is not limited to this, and can be applied to various heat treatments such as CVD treatment, cleaning, and ashing.
また非処理物も半導体ウェハーに限らず、あらゆるｆ）
板状の非処理物に応用し得る。In addition, non-processed items are not limited to semiconductor wafers, but all f)
It can be applied to plate-shaped untreated materials.
（発明の効果）
以上に述へた如く本発明によれば、加熱処理装置本体内
に、上板、中板及び下板を水平状１５で上下方向に重ね
、上板と中板との間には非処理物の収納空間を、中板と
下板との間にはガス供給空間を形成し、中板に形成した
斜めの貫通孔を介してガス供給空間内のガスを収納空間
内に噴出させ。(Effects of the Invention) As described above, according to the present invention, the upper plate, the middle plate, and the lower plate are stacked horizontally 15 in the vertical direction in the heat treatment apparatus main body, and the space between the upper plate and the middle plate is A storage space for unprocessed materials is formed in the space, and a gas supply space is formed between the middle plate and the lower plate, and the gas in the gas supply space is fed into the storage space through the diagonal through hole formed in the middle plate. Let me squirt.
この噴出ガスにより非処理物を収納空間内で浮かせた状
態で回転させつつ加熱するようにしたので、非処理物を
非接触状態で加熱処理でき、加熱処理を均一になすこと
ができる。特に前記貫通孔を円周方向に等間隔離間し１
円周方向を基準として同一方向に傾斜し、且つ収納空間
側に開口部をガス供給空間側に開口部よりも内方に位置
するようにすれば、非処理物の回転を安定した状態でな
すことができる。Since the ejected gas rotates and heats the non-processed material in a floating state within the storage space, the non-processed material can be heat-treated in a non-contact state, and the heat treatment can be uniform. In particular, the through holes are equally spaced in the circumferential direction.
If they are tilted in the same direction with respect to the circumferential direction, and the opening on the storage space side is located further inward than the opening on the gas supply space side, the rotation of the non-processed material can be achieved in a stable state. be able to.
また、使用するガスを、あらかじめ加温しておけば加熱
処理効果は大である。Further, if the gas to be used is heated in advance, the heat treatment effect will be great.
さらにまた１貫通孔を、二種の同心円周上に配置し、半
径が小である側の貫通孔の上向き傾斜方向を、半径が大
である側の貫通孔に比し、円の中心側にすれば薄板状被
処理物は安定な回転をすることがでさる。Furthermore, one through hole is arranged on two types of concentric circles, and the upwardly inclined direction of the through hole on the side with a smaller radius is set toward the center of the circle compared to the through hole on the side with a larger radius. This allows the thin plate-shaped workpiece to rotate stably.
第１図は本発明に係る加熱路Ｉ１１！装置を適用した拡
散装置の概略構成図、第２図は同加熱処理装置の分解斜
視図、第３図は同加熱処理装置の要部縦断面図、第４図
は中板の平面図である。
尚１図面中（１）は拡ｒ＆、装ｍ、（２）はカセット（
３）は搬送ベルト、（４）は出し入れ装置、（５）は加
熱処理装置、（３）は薄板状被処理物、（１２）は加熱
処理装置本体、（１３）、ｆｆ１）は加熱？ｃｉ、 （
１７）。
（２０）は紫外線ランプ、 （２４）は下板、（２５）
は中板、（２６）は上板、（２９）は貫通孔、 （Ｓ＋
）はガス供給田空間、（Ｓ２）は非処理物の収納空間で
ある。FIG. 1 shows the heating path I11 according to the present invention! A schematic configuration diagram of a diffusion device to which the device is applied, FIG. 2 is an exploded perspective view of the heat treatment device, FIG. 3 is a vertical sectional view of the main part of the heat treatment device, and FIG. 4 is a plan view of the middle plate. . In addition, (1) in one drawing shows the enlarged r&, mounting m, and (2) shows the cassette (
3) is the conveyor belt, (4) is the loading/unloading device, (5) is the heat treatment device, (3) is the thin plate-shaped object, (12) is the heat treatment device main body, (13), ff1) is the heating? ci, (
17). (20) is an ultraviolet lamp, (24) is the lower plate, (25)
is the middle plate, (26) is the top plate, (29) is the through hole, (S+
) is a gas supply field space, and (S2) is a storage space for unprocessed materials.
Claims (3)
を水平状態で上下方向に重ね合わせ、これら上板と中板
の間には薄板状被処理物の収納空間を、中板と下板との
間にはガス供給空間をそれぞれ形成し、更に中板には前
記収納空間とガス供給空間を連通する複数の貫通孔を穿
設し、これら貫通孔は少なくとも１つの円周上にあって
等間隔に離間し、垂直に対して傾斜しており、且つ同一
円周上の貫通孔は該円周の接線方向に対し同一方向とな
っていることを特徴とする薄板状被処理物の加熱処理装
置。(1) An upper plate, a middle plate, and a lower plate are stacked vertically in a horizontal state in the main body with a built-in heating device, and a storage space for the thin plate-shaped workpiece is provided between the upper plate and the middle plate. A gas supply space is formed between the lower plate and the middle plate, and a plurality of through holes are formed in the middle plate to communicate the storage space and the gas supply space, and these through holes are arranged on at least one circumference. A thin plate-shaped workpiece, characterized in that the through holes are spaced at equal intervals, are inclined with respect to the vertical, and the through holes on the same circumference are in the same direction with respect to the tangential direction of the circumference. heat treatment equipment.
側はガス供給空間への開口部よりも内方に位置している
ことを特徴とする特許請求の範囲第１項記載の薄板状被
処理物の加熱処理装置。(2) The opening side of the through-hole to the storage space for the thin plate-shaped object to be processed is located further inward than the opening to the gas supply space. Heat treatment equipment for thin plate-shaped objects.
中板及び下板は合成石英にて形成されていることを特徴
とする特許請求の範囲第１項又は第２項記載の薄板状被
処理物の加熱処理装置。(3) the heating device is an ultraviolet lamp; the upper plate;
3. A heat treatment apparatus for a thin plate-like object as claimed in claim 1 or 2, wherein the middle plate and the lower plate are made of synthetic quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18557084A JPS6163023A (en) | 1984-09-04 | 1984-09-04 | Heat treating device for thin plate type substance to be treated |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18557084A JPS6163023A (en) | 1984-09-04 | 1984-09-04 | Heat treating device for thin plate type substance to be treated |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6163023A true JPS6163023A (en) | 1986-04-01 |
Family
ID=16173114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18557084A Pending JPS6163023A (en) | 1984-09-04 | 1984-09-04 | Heat treating device for thin plate type substance to be treated |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6163023A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008205427A (en) * | 2007-01-24 | 2008-09-04 | Sumitomo Electric Ind Ltd | Gas phase reaction growth apparatus and gas phase reaction growth method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53107275A (en) * | 1977-02-28 | 1978-09-19 | Ibm | Device for stopping articles moving in fluid manner |
| JPS57128940A (en) * | 1981-02-04 | 1982-08-10 | Sony Corp | Heat treating method for substrate |
| JPS59215718A (en) * | 1983-05-23 | 1984-12-05 | Kokusai Electric Co Ltd | Infrared heat treatment apparatus for semiconductor wafer |
-
1984
- 1984-09-04 JP JP18557084A patent/JPS6163023A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53107275A (en) * | 1977-02-28 | 1978-09-19 | Ibm | Device for stopping articles moving in fluid manner |
| JPS57128940A (en) * | 1981-02-04 | 1982-08-10 | Sony Corp | Heat treating method for substrate |
| JPS59215718A (en) * | 1983-05-23 | 1984-12-05 | Kokusai Electric Co Ltd | Infrared heat treatment apparatus for semiconductor wafer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008205427A (en) * | 2007-01-24 | 2008-09-04 | Sumitomo Electric Ind Ltd | Gas phase reaction growth apparatus and gas phase reaction growth method |
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