JPS56131930A - Controlling device of wafer temperature - Google Patents

Controlling device of wafer temperature

Info

Publication number
JPS56131930A
JPS56131930A JP3387880A JP3387880A JPS56131930A JP S56131930 A JPS56131930 A JP S56131930A JP 3387880 A JP3387880 A JP 3387880A JP 3387880 A JP3387880 A JP 3387880A JP S56131930 A JPS56131930 A JP S56131930A
Authority
JP
Japan
Prior art keywords
work
electrode
supporting surface
chamber
pressure inside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3387880A
Other languages
Japanese (ja)
Inventor
Toru Otsubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3387880A priority Critical patent/JPS56131930A/en
Publication of JPS56131930A publication Critical patent/JPS56131930A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the contact of a work and an electrode and avoid the work from heating up, by making a supporting surface of the work thin, and making the refrigerant pressure inside the electrode a little higher than the pressure inside the dry-etching chamber. CONSTITUTION:After an electrode holder 19 is lowered and the work 13 is placed on the supporting surface 14a, the holder 19 is raised and pressed against a chamber 10 to fix the peripheral part of the work 13 between the work keeper 12. By adjusting the pressure of refrigerant which circulates inside the electrode 14 so that it is a little higher than the pressure inside the chamber 10, the thin supporting surface 14 is pressed against the work 13, thus sufficiently cooling the work 13. This avoids effectively the heating up of the work and also the heat damage of the resist material.
JP3387880A 1980-03-19 1980-03-19 Controlling device of wafer temperature Pending JPS56131930A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3387880A JPS56131930A (en) 1980-03-19 1980-03-19 Controlling device of wafer temperature

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3387880A JPS56131930A (en) 1980-03-19 1980-03-19 Controlling device of wafer temperature

Publications (1)

Publication Number Publication Date
JPS56131930A true JPS56131930A (en) 1981-10-15

Family

ID=12398770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3387880A Pending JPS56131930A (en) 1980-03-19 1980-03-19 Controlling device of wafer temperature

Country Status (1)

Country Link
JP (1) JPS56131930A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5773928U (en) * 1980-10-22 1982-05-07
JPS6030540U (en) * 1983-08-03 1985-03-01 株式会社日立製作所 Cooling device for wafer loading table
JPS62147340U (en) * 1987-02-10 1987-09-17
JPS62252943A (en) * 1986-04-25 1987-11-04 Fujitsu Ltd Hight frequency plasma etching apparatus
US5695566A (en) * 1995-05-24 1997-12-09 Matsushita Electric Industrial Co.,Ltd. Apparatus and method for plasma-processing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123669A (en) * 1977-04-05 1978-10-28 Fujitsu Ltd Wafer holding method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123669A (en) * 1977-04-05 1978-10-28 Fujitsu Ltd Wafer holding method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5773928U (en) * 1980-10-22 1982-05-07
JPS6030540U (en) * 1983-08-03 1985-03-01 株式会社日立製作所 Cooling device for wafer loading table
JPS62252943A (en) * 1986-04-25 1987-11-04 Fujitsu Ltd Hight frequency plasma etching apparatus
JPH0476495B2 (en) * 1986-04-25 1992-12-03 Fujitsu Ltd
JPS62147340U (en) * 1987-02-10 1987-09-17
US5695566A (en) * 1995-05-24 1997-12-09 Matsushita Electric Industrial Co.,Ltd. Apparatus and method for plasma-processing

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