JPS56131931A - Controlling device of wafer temperature - Google Patents

Controlling device of wafer temperature

Info

Publication number
JPS56131931A
JPS56131931A JP3388080A JP3388080A JPS56131931A JP S56131931 A JPS56131931 A JP S56131931A JP 3388080 A JP3388080 A JP 3388080A JP 3388080 A JP3388080 A JP 3388080A JP S56131931 A JPS56131931 A JP S56131931A
Authority
JP
Japan
Prior art keywords
wafer
cooling water
metallic plate
supporting surface
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3388080A
Other languages
Japanese (ja)
Inventor
Toru Otsubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3388080A priority Critical patent/JPS56131931A/en
Publication of JPS56131931A publication Critical patent/JPS56131931A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To assure contact of a work and an electrode by forming a wafer supporting table with a metallic plate, and expanding this metallic plate convexly using pressurized cooling water. CONSTITUTION:After lowering an electrode holder 13 and placing the wafer 7 on a wafer supporting surface 8', the holder 13 is raised and the peripheral part of wafer 7 is fixed inside the electrode by wafer keeper 6. Then, by adjusting pressure of the cooling water and expanding the supporting surface 8' made of the metallic plate convexly, the wafer 7 is adhered closely and completely to the supporting surface 8' thus decreasing its heat transfer resistance against the cooling water. This prevents heat damage of resists etc. even when dry-etching is done under high output of high frequency power thus improving productivity of the etching device.
JP3388080A 1980-03-19 1980-03-19 Controlling device of wafer temperature Pending JPS56131931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3388080A JPS56131931A (en) 1980-03-19 1980-03-19 Controlling device of wafer temperature

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3388080A JPS56131931A (en) 1980-03-19 1980-03-19 Controlling device of wafer temperature

Publications (1)

Publication Number Publication Date
JPS56131931A true JPS56131931A (en) 1981-10-15

Family

ID=12398828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3388080A Pending JPS56131931A (en) 1980-03-19 1980-03-19 Controlling device of wafer temperature

Country Status (1)

Country Link
JP (1) JPS56131931A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5773928U (en) * 1980-10-22 1982-05-07
JPS60102742A (en) * 1983-11-09 1985-06-06 Hitachi Ltd Controller for substrate temperature
JPS60136314A (en) * 1983-12-26 1985-07-19 Hitachi Ltd Treating equipment in low pressure atmosphere
JPS61133385A (en) * 1984-11-30 1986-06-20 Fujitsu Ltd Cooling device
JPS63137932U (en) * 1987-03-02 1988-09-12
JPS63260031A (en) * 1986-09-19 1988-10-27 Tokyo Ohka Kogyo Co Ltd Plasma reaction treatment device
US5203981A (en) * 1991-06-05 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Vacuum-treatment apparatus
JPH08172078A (en) * 1995-07-25 1996-07-02 Tokyo Ohka Kogyo Co Ltd Plasma reaction treater
US5695566A (en) * 1995-05-24 1997-12-09 Matsushita Electric Industrial Co.,Ltd. Apparatus and method for plasma-processing
US20140137800A1 (en) * 2012-11-22 2014-05-22 Toyoda Gosei Co., Ltd. Device for producing compound semiconductor and wafer retainer

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5773928U (en) * 1980-10-22 1982-05-07
JPS60102742A (en) * 1983-11-09 1985-06-06 Hitachi Ltd Controller for substrate temperature
JPS60136314A (en) * 1983-12-26 1985-07-19 Hitachi Ltd Treating equipment in low pressure atmosphere
JPS61133385A (en) * 1984-11-30 1986-06-20 Fujitsu Ltd Cooling device
JPS63260031A (en) * 1986-09-19 1988-10-27 Tokyo Ohka Kogyo Co Ltd Plasma reaction treatment device
JPS63137932U (en) * 1987-03-02 1988-09-12
US5203981A (en) * 1991-06-05 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Vacuum-treatment apparatus
US5695566A (en) * 1995-05-24 1997-12-09 Matsushita Electric Industrial Co.,Ltd. Apparatus and method for plasma-processing
JPH08172078A (en) * 1995-07-25 1996-07-02 Tokyo Ohka Kogyo Co Ltd Plasma reaction treater
US20140137800A1 (en) * 2012-11-22 2014-05-22 Toyoda Gosei Co., Ltd. Device for producing compound semiconductor and wafer retainer

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