JPS54108579A - Method and device for plasma etching - Google Patents
Method and device for plasma etchingInfo
- Publication number
- JPS54108579A JPS54108579A JP1577178A JP1577178A JPS54108579A JP S54108579 A JPS54108579 A JP S54108579A JP 1577178 A JP1577178 A JP 1577178A JP 1577178 A JP1577178 A JP 1577178A JP S54108579 A JPS54108579 A JP S54108579A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- temperature
- tube
- plasma
- supplied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To fulfill high-speed and high-precision etching by increasing etching power while cooling heat at the time of the generation of plasma.
CONSTITUTION: Electrode plate 21 with a wafer mounted is equipped to holder 20 and put into reactor tube 18 and high-frequency power 15 is supplied while etching gas is flowed with the internal pressure held at approximate 0.5 Torr., so that plasma will be generated among electrodes 21. At this time liquid freon, etc., is supplied to cooling part 19 of tube 18 by pump 13 to stop the temperature inside of the tube to rise. The temperature and flow of the refrigerant are varied corresponding to the high-frequency power applied and the temperature is held at a temperature of below 50°C when the resist mask on the wafer will not change in quality. Consequently, faster and more accurate etching can be done without causing the etching mask to change in quality and to deform.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1577178A JPS54108579A (en) | 1978-02-14 | 1978-02-14 | Method and device for plasma etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1577178A JPS54108579A (en) | 1978-02-14 | 1978-02-14 | Method and device for plasma etching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54108579A true JPS54108579A (en) | 1979-08-25 |
Family
ID=11898058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1577178A Pending JPS54108579A (en) | 1978-02-14 | 1978-02-14 | Method and device for plasma etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54108579A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4289598A (en) * | 1980-05-03 | 1981-09-15 | Technics, Inc. | Plasma reactor and method therefor |
JPS60158627A (en) * | 1984-01-27 | 1985-08-20 | Hitachi Ltd | Controlling method of surface reaction |
US4624214A (en) * | 1982-10-08 | 1986-11-25 | Hitachi, Ltd. | Dry-processing apparatus |
JP2013149934A (en) * | 2011-12-22 | 2013-08-01 | Dainippon Screen Mfg Co Ltd | Substrate processing method and substrate processing apparatus |
-
1978
- 1978-02-14 JP JP1577178A patent/JPS54108579A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4289598A (en) * | 1980-05-03 | 1981-09-15 | Technics, Inc. | Plasma reactor and method therefor |
US4624214A (en) * | 1982-10-08 | 1986-11-25 | Hitachi, Ltd. | Dry-processing apparatus |
JPS60158627A (en) * | 1984-01-27 | 1985-08-20 | Hitachi Ltd | Controlling method of surface reaction |
JPH0614518B2 (en) * | 1984-01-27 | 1994-02-23 | 株式会社日立製作所 | Surface reaction control method |
JP2013149934A (en) * | 2011-12-22 | 2013-08-01 | Dainippon Screen Mfg Co Ltd | Substrate processing method and substrate processing apparatus |
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