JPS54108579A - Method and device for plasma etching - Google Patents

Method and device for plasma etching

Info

Publication number
JPS54108579A
JPS54108579A JP1577178A JP1577178A JPS54108579A JP S54108579 A JPS54108579 A JP S54108579A JP 1577178 A JP1577178 A JP 1577178A JP 1577178 A JP1577178 A JP 1577178A JP S54108579 A JPS54108579 A JP S54108579A
Authority
JP
Japan
Prior art keywords
etching
temperature
tube
plasma
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1577178A
Other languages
Japanese (ja)
Inventor
Daijiro Kudo
Kazuo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1577178A priority Critical patent/JPS54108579A/en
Publication of JPS54108579A publication Critical patent/JPS54108579A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To fulfill high-speed and high-precision etching by increasing etching power while cooling heat at the time of the generation of plasma.
CONSTITUTION: Electrode plate 21 with a wafer mounted is equipped to holder 20 and put into reactor tube 18 and high-frequency power 15 is supplied while etching gas is flowed with the internal pressure held at approximate 0.5 Torr., so that plasma will be generated among electrodes 21. At this time liquid freon, etc., is supplied to cooling part 19 of tube 18 by pump 13 to stop the temperature inside of the tube to rise. The temperature and flow of the refrigerant are varied corresponding to the high-frequency power applied and the temperature is held at a temperature of below 50°C when the resist mask on the wafer will not change in quality. Consequently, faster and more accurate etching can be done without causing the etching mask to change in quality and to deform.
COPYRIGHT: (C)1979,JPO&Japio
JP1577178A 1978-02-14 1978-02-14 Method and device for plasma etching Pending JPS54108579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1577178A JPS54108579A (en) 1978-02-14 1978-02-14 Method and device for plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1577178A JPS54108579A (en) 1978-02-14 1978-02-14 Method and device for plasma etching

Publications (1)

Publication Number Publication Date
JPS54108579A true JPS54108579A (en) 1979-08-25

Family

ID=11898058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1577178A Pending JPS54108579A (en) 1978-02-14 1978-02-14 Method and device for plasma etching

Country Status (1)

Country Link
JP (1) JPS54108579A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289598A (en) * 1980-05-03 1981-09-15 Technics, Inc. Plasma reactor and method therefor
JPS60158627A (en) * 1984-01-27 1985-08-20 Hitachi Ltd Controlling method of surface reaction
US4624214A (en) * 1982-10-08 1986-11-25 Hitachi, Ltd. Dry-processing apparatus
JP2013149934A (en) * 2011-12-22 2013-08-01 Dainippon Screen Mfg Co Ltd Substrate processing method and substrate processing apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289598A (en) * 1980-05-03 1981-09-15 Technics, Inc. Plasma reactor and method therefor
US4624214A (en) * 1982-10-08 1986-11-25 Hitachi, Ltd. Dry-processing apparatus
JPS60158627A (en) * 1984-01-27 1985-08-20 Hitachi Ltd Controlling method of surface reaction
JPH0614518B2 (en) * 1984-01-27 1994-02-23 株式会社日立製作所 Surface reaction control method
JP2013149934A (en) * 2011-12-22 2013-08-01 Dainippon Screen Mfg Co Ltd Substrate processing method and substrate processing apparatus

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