JPS57133633A - Dry-etching device - Google Patents

Dry-etching device

Info

Publication number
JPS57133633A
JPS57133633A JP1895381A JP1895381A JPS57133633A JP S57133633 A JPS57133633 A JP S57133633A JP 1895381 A JP1895381 A JP 1895381A JP 1895381 A JP1895381 A JP 1895381A JP S57133633 A JPS57133633 A JP S57133633A
Authority
JP
Japan
Prior art keywords
gas
etching
chamber
subchamber
dry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1895381A
Other languages
Japanese (ja)
Inventor
Hideo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP1895381A priority Critical patent/JPS57133633A/en
Publication of JPS57133633A publication Critical patent/JPS57133633A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain the dry-etching device with which a microscopic work can be performed by a method wherein the subchamber, having a built-in adsorption type pump, is connected to the etching chamber constituting a dry-etching device through the intermediary of a valve, and unnecessary residue gas and reaction product gas are selectively exhausted from the chamber. CONSTITUTION:A pair of electrode cathode 2 and annode 3 are arranged opposing each other in the etching chamber 1 which constitutes the etching device, the substrate 4 to be etched is placed on the cathode 2, and etching gas is sent in through a flow meter 9. Also, a high frequency is applied to the cathode from a power source 12 while the flow-in speed of the gas is regulated by the trap 10 and an oil rotating pump 11 on the gas exhaust system, plasma 13 is generated between electrodes, and the etching is performed on the substrate 4. In this constitution, the adsorption type pump 16 and a subchamber 15, containing the thermoelectric couple 18 installed on the surface of the pump 16, are connected to the chamber 1 through the intermediary of a valve 14, the partial pressure of the residue gas is reduced by controlling the inside temperature of the chamber 15 using a cooling agent circulator 17, and the gas is adsorbed in the subchamber.
JP1895381A 1981-02-13 1981-02-13 Dry-etching device Pending JPS57133633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1895381A JPS57133633A (en) 1981-02-13 1981-02-13 Dry-etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1895381A JPS57133633A (en) 1981-02-13 1981-02-13 Dry-etching device

Publications (1)

Publication Number Publication Date
JPS57133633A true JPS57133633A (en) 1982-08-18

Family

ID=11986003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1895381A Pending JPS57133633A (en) 1981-02-13 1981-02-13 Dry-etching device

Country Status (1)

Country Link
JP (1) JPS57133633A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117629A (en) * 1983-11-30 1985-06-25 Hitachi Ltd Vacuum processing device
JPS61174634A (en) * 1985-01-29 1986-08-06 Toshiba Corp Method of dry etching

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146579A (en) * 1978-05-09 1979-11-15 Mitsubishi Electric Corp Plasma etching device
JPS5741368A (en) * 1980-08-26 1982-03-08 Toshiba Corp Vacuum treatment chamber containing trap member

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146579A (en) * 1978-05-09 1979-11-15 Mitsubishi Electric Corp Plasma etching device
JPS5741368A (en) * 1980-08-26 1982-03-08 Toshiba Corp Vacuum treatment chamber containing trap member

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117629A (en) * 1983-11-30 1985-06-25 Hitachi Ltd Vacuum processing device
JPH0354458B2 (en) * 1983-11-30 1991-08-20
JPS61174634A (en) * 1985-01-29 1986-08-06 Toshiba Corp Method of dry etching
JPH0526331B2 (en) * 1985-01-29 1993-04-15 Toshiba Kk

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