JPH0526331B2 - - Google Patents

Info

Publication number
JPH0526331B2
JPH0526331B2 JP60013490A JP1349085A JPH0526331B2 JP H0526331 B2 JPH0526331 B2 JP H0526331B2 JP 60013490 A JP60013490 A JP 60013490A JP 1349085 A JP1349085 A JP 1349085A JP H0526331 B2 JPH0526331 B2 JP H0526331B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60013490A
Other languages
Japanese (ja)
Other versions
JPS61174634A (en
Inventor
Takashi Yamazaki
Haruo Okano
Takehiro Kawasaki
Original Assignee
Toshiba Kk
Shibaura Seisakusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk, Shibaura Seisakusho Kk filed Critical Toshiba Kk
Priority to JP60013490A priority Critical patent/JPH0526331B2/ja
Publication of JPS61174634A publication Critical patent/JPS61174634A/en
Publication of JPH0526331B2 publication Critical patent/JPH0526331B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
JP60013490A 1985-01-29 1985-01-29 Expired - Lifetime JPH0526331B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60013490A JPH0526331B2 (en) 1985-01-29 1985-01-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60013490A JPH0526331B2 (en) 1985-01-29 1985-01-29

Publications (2)

Publication Number Publication Date
JPS61174634A JPS61174634A (en) 1986-08-06
JPH0526331B2 true JPH0526331B2 (en) 1993-04-15

Family

ID=11834555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60013490A Expired - Lifetime JPH0526331B2 (en) 1985-01-29 1985-01-29

Country Status (1)

Country Link
JP (1) JPH0526331B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697676B2 (en) * 1985-11-26 1994-11-30 忠弘 大見 Wafer susceptor device
JPH06103665B2 (en) * 1987-01-29 1994-12-14 東京エレクトロン株式会社 Processor
KR100237687B1 (en) * 1991-04-04 2000-01-15 가나이 쓰도무 Dry etching method
JP3327285B2 (en) * 1991-04-04 2002-09-24 株式会社日立製作所 Plasma processing method and semiconductor device manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118172A (en) * 1978-03-06 1979-09-13 Nichiden Varian Kk Method of dry etching aluminum
JPS57133633A (en) * 1981-02-13 1982-08-18 Anelva Corp Dry-etching device
US4376672A (en) * 1981-10-26 1983-03-15 Applied Materials, Inc. Materials and methods for plasma etching of oxides and nitrides of silicon
US4412885A (en) * 1982-11-03 1983-11-01 Applied Materials, Inc. Materials and methods for plasma etching of aluminum and aluminum alloys

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118172A (en) * 1978-03-06 1979-09-13 Nichiden Varian Kk Method of dry etching aluminum
JPS57133633A (en) * 1981-02-13 1982-08-18 Anelva Corp Dry-etching device
US4376672A (en) * 1981-10-26 1983-03-15 Applied Materials, Inc. Materials and methods for plasma etching of oxides and nitrides of silicon
US4412885A (en) * 1982-11-03 1983-11-01 Applied Materials, Inc. Materials and methods for plasma etching of aluminum and aluminum alloys

Also Published As

Publication number Publication date
JPS61174634A (en) 1986-08-06

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