JPS63274768A - Vacuum treatment device - Google Patents

Abstract

PURPOSE:To efficiently control the temp. of a material to be treated and to efficiently carry out the vacuum treatment by holding the material to be treated to heat by a heating plate and supporting the material to be treated by a supporting device to separate from the heating plate when the vacuum treatment is carried out. CONSTITUTION:The material 2 to be treated is held by the heater 3 and heating plate 3 provided with a heat reflex plate 6 thereunder to heat the material to be treated to control to be at a specified temp. in a vacuum vessel 1 provided with a gas discharge opening 11. Then, a process gas is introduced from an introducing opening 10 and a high voltage is impressed to a target 7 disposed to be confronted to the material 2 to be treated from an electric power source 9 to generate plasma with the result the material of the target 7 is scattered to stick to the surface of the material 2 to be treated. In the above-mentioned vacuum treatment, the material 2 to be treated is supported with supporting shafts 14 and the heating plate 3 is supported by a shaft 13 so as to be movable vertically. In above-mentioned treatment, the material 2 to be treated is separated from the heating plate 3 by lowering the heating plate 3. As a result, the material 2 to be treated is prevented from overheating and the treatment is efficiently carried out.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a vacuum processing apparatus, and more particularly to a vacuum processing apparatus that enables efficient heating control of a workpiece.

(Prior Art) FIG. 7 shows a sputtering apparatus as a conventional vacuum processing apparatus, in which a heating plate 3 for holding a workpiece 2 in a vertical position is disposed inside and on the side surface of a vacuum vessel 1. The heating plate 3 is fixed to a support rod 4 attached to the inner surface of the vacuum container 1. Further, a heater 5 is attached to the back surface of the heating plate 3, and a heat reflecting plate 6 is disposed near the heater 5. The above vacuum container 1
A target 7 is disposed on the other side of the inside of the target 7 with an insulator 8 interposed therebetween so as to face the object 2 to be processed, and a power source 9 is connected to the target 7 .

Further, the upper surface of the vacuum container 1 is provided with a gas inlet 10 for a process gas, and the lower surface of the vacuum container 1 is provided with an exhaust port 11 connected to an evacuation device (not shown).

In the above apparatus, the workpiece 2 is fixed to the heating plate 3,
After evacuating through the exhaust port 11 and introducing a process gas through the gas inlet 10 to create a gas atmosphere at a predetermined pressure within the vacuum container 1, a high voltage is applied to the target 7 portion from the power source 9. Plasma discharge is generated to scatter the target 7 material and attach it to the surface of the object 2 to be treated.

At this time, the workpiece 2 is heated to a predetermined temperature via the heating plate 3 by energizing the heater 5 .

(Problem to be Solved by the Invention) However, as shown in FIG. 8, the temperature T1 of the workpiece 2 heated by the heater 5 is such that as the sputtering time elapses, the energy of the sputtered material decreases. Because it accumulates on object 2, it rises over time,
After the sputtering time has elapsed, the temperature T2 is reached and T2-
A temperature rise of Tl -61 minutes will occur. The temperature T of the object to be processed 2 during sputtering is limited by its purpose in terms of film quality, and if there is a limitation of Tl≦T≦T3, the upper limit of the sputtering temperature T3 is determined by the temperature increase ΔT. You will end up exceeding it.

Therefore, at the same time as sputtering starts, the heater 5
As shown in FIG. 9, when the electricity is turned off, the temperature Tl of the object 2 to be processed decreases, but since the heating plate 3 has a heat capacity and is in a vacuum, However, the temperature decreases only to T'l, and the energy accumulated during sputtering is the same, so T'2 - T'l - ΔT, and the temperature of the workpiece 2 after sputtering is Temperature T'2 still exceeds T3, which is the upper limit of sputtering temperature.

Therefore, it is necessary to make the temperature drop of the workpiece 2 larger than the difference between the temperature of the workpiece after sputtering and the upper limit temperature of sputtering, that is, ΔT2−
3-ΔT1-1°, but any of the above methods solves the problem that the temperature of the workpiece 2 becomes higher than the upper limit temperature of sputtering, making it difficult to properly control the temperature of the workpiece 2. have.

In order to satisfy the above conditions, the temperature rise of the object 2 to be processed can be suppressed by making the sputtering rate very small and performing sputtering for a long time, or the heating plate 3 should be equipped with a heating heater 5 or the like. By providing a cooling mechanism in the heating plate 3, it is possible to suppress the temperature rise of the object 2 to be processed, but in the former case, a lot of time is required for processing, and in the latter case, There are problems in that it takes time to reheat the cooled heating plate 3 and the structure of the heating plate 3 becomes complicated.

The present invention has been made in view of the above-mentioned points, and an object of the present invention is to provide a vacuum processing apparatus that can reliably control the temperature of a workpiece.

[Structure of the invention]

(Means for Solving the Problems) In order to achieve the above object, the vacuum processing apparatus according to the present invention includes:
A heating plate is placed inside the vacuum container to hold the object to be processed.
A vacuum processing apparatus that processes the workpiece while controlling the heating of the workpiece using the heating plate, is provided with a support device that supports the workpiece at a distance from the heating plate during the processing. There is.

(Function) According to the present invention, since the object to be processed is separated from the heating plate by the support device during processing, the heat of the heating plate is not transferred to the object to be processed. Since the heat dissipation effect is enhanced, the temperature of the object to be processed can be sufficiently lowered, and efficient temperature control can be performed.

(Example) Hereinafter, an example of the present invention will be described with reference to FIGS. 1 to 6, and the same parts as in FIGS. 7 to 9 will be denoted by the same reference numerals, and the explanation thereof will be omitted.

FIG. 1 shows an embodiment of the present invention, in which a vacuum container 1
A heating plate 3 that holds the object 2 to be processed is disposed inside and below the heating plate 3. A shaft that can be freely raised and lowered is attached to the lower surface of the heating plate 3 and passes through the lower surface of the vacuum container 1 via a sealing member 12. 13
are connected, and the heating plate 3 can be raised and lowered by the raising and lowering movement of the shaft 13. Further, a plurality of support shafts 14 are fixed to the lower surface of the vacuum vessel 1 as support devices passing through the heating plate 3 in the vertical direction, and the support shafts 14 are shown in FIG. When the heating plate 3 is raised, its upper end surface is almost flush with the upper surface of the heating plate 3, and as shown in FIG. 1(b), when the heating plate 3 is lowered, its upper end surface is Object to be processed 2
It is designed to support. Furthermore, a target 7 is disposed on the inner upper surface of the vacuum chamber 1 with an insulator 8 interposed therebetween so as to face the workpiece 2 supported on the heating plate 3 .

In this embodiment, the object to be processed 2 is placed on the upper surface of the heating plate 3, the inside of the vacuum container 1 is evacuated from the exhaust port 11 by a vacuum evacuation device (not shown), and the process gas is introduced from the gas inlet 10. The inside of the vacuum container 1 is made into a gas atmosphere at a predetermined pressure. Then, by applying electricity to the heater 5, the heating plate 3 is heated to heat the object 2 to be processed, and when the object 2 to be processed reaches a predetermined temperature (T1), the electricity to the heater 5 is stopped, and the elevating shaft 14 lowers the heating plate 3 and separates the object 2 from the heating plate 3. At the same time, from the power source 9 to the target 7 section above? :! Sputtering is performed by applying J voltage to generate plasma discharge, scattering the material of the target 7 and making it adhere to the surface of the object 2 to be processed.

In the case of this embodiment, as shown in FIG. 2, the temperature of the workpiece 2 rises because the energy of the sputtered material is accumulated on the workpiece 2, but as described above, the temperature of the workpiece 2 increases. Since the object to be processed 2 is separated from the object to be processed 2, the temperature of the object to be processed 2 is significantly lowered, and the actual temperature T゛°2 of the object to be processed 2 becomes lower than the upper limit temperature T3 for sputtering.

As shown in FIGS. 3(a) and 3(b), in general, even if the input to the heater 5 is stopped while the workpiece 2 is held on the heating plate 3, the heating plate 3 A large heat capacity exists, and at this time, the object to be processed 2 and the heating plate 3 are in local contact, and the heat transfer is performed by conduction and radiation due to the contact, so the temperature of the object to be processed 2 decreases. does not decline rapidly. On the other hand, as in this embodiment, the workpiece 2
When the heating plate 3 and the heating plate 3 are separated from each other, there is no heat transfer between the heating plate 3 and the heating plate 3.Moreover, inert gas molecules 15 such as argon introduced during sputtering collide with the surface of the workpiece 2.
This is because as the cooling effect of the gas increases, the heat radiated from the back surface of the object 2 increases, and the temperature decrease of the object 2 becomes ΔT 1-1°×ΔT 1-1 ″.

Therefore, in this embodiment, the temperature of the workpiece 2 can be efficiently lowered, and even if the energy of the sputtered material is accumulated and the temperature of the workpiece 2 increases, the temperature of the workpiece 2 can be lowered. It becomes possible to control the sputtering temperature to below the upper limit temperature.

4(a) and 4(b) show another embodiment of the present invention, in which a heating plate 3 is attached to the lower part of the inside of the vacuum vessel 1, and a support shaft 14 passing through the heating plate 3 is attached. It is configured to be movable up and down, and during sputtering, as shown in FIG. 4(b), the support shaft 14 is raised to separate the workpiece 2 from the heating plate 3. , similar to the above embodiment.

In this embodiment as well, the workpiece 2 is similar to the above embodiment.
Even if the temperature of the workpiece 2 increases due to the accumulation of energy in the sputtering material, the temperature of the workpiece 2 can be controlled to be below the upper limit temperature of sputtering. It is.

Furthermore, FIG. 5 shows another embodiment of the present invention,
Instead of the support shaft shown in FIG. 1, a support stand 16 for supporting the peripheral edge of the object 2 to be processed is provided, and a support stand 16 is provided below the support shaft 16 so as to be able to come into contact with and separate from the lower surface side of the object 2 to be processed. A heating plate 3 is provided.

In this embodiment as well, the workpiece 2 is similar to the above embodiment.
It is possible to control the temperature below the upper limit temperature for sputtering.

In the above embodiment, the heater 5 is provided on the back side of the heating plate 3, but as shown in FIG. 6(a), the heater 5 may be embedded inside the heating plate 3. Alternatively, as shown in FIG. 6(b), a plurality of heating lamps 17, 17 may be arranged below the heating plate 3, or as shown in FIG. 6(c). As shown, the heating plate 3 may be formed of a heating element, and the power source 18 may be connected to the heating plate 3 to directly supply electricity to the heating plate 3.

〔Effect of the invention〕

As described above, the vacuum processing apparatus according to the present invention is provided with a support device that separates the object to be processed from the heating plate during processing,
With this support device, the temperature of the workpiece is lowered by separating the workpiece from the heating plate, so the heat accumulated on the heating plate is not transferred to the workpiece, and the heat dissipation effect of the workpiece is increased. Therefore, the temperature of the object to be processed can be sufficiently lowered.

As a result, the temperature of the object to be processed during processing can be reliably controlled to be below the upper limit temperature during sputtering, resulting in effects such as efficient sputtering.

[Brief explanation of the drawing]

1 to 6 show embodiments of the present invention, where FIG. 1(a) is a longitudinal sectional view and FIG. 1(b) shows the operation of the heating plate of FIG. 1(a). A partial sectional view, FIG. 2 is a diagram showing the relationship between sputtering time and temperature of the object to be processed, and FIGS. 3(a), (
b) and (c) are explanatory diagrams showing the heat transfer mechanism of the workpiece, respectively. Fig. 4 (a) is a longitudinal sectional view, and Fig. 4 (b) is an illustration showing the operation of the support shaft in Fig. 4 (a). 5 is a longitudinal sectional view of the object to be treated, and FIGS. 6(a) and (b)
, (C) is a block diagram showing the heating means for the object to be processed, FIG. 7 is a vertical cross-sectional view showing a conventional vacuum processing apparatus, and FIGS. 8 and 9 are respectively the sputtering time and the object to be processed by the conventional apparatus. FIG. 3 is a diagram showing the relationship with object temperature. DESCRIPTION OF SYMBOLS 1... Vacuum container, 2... Processing object, 3... Heating plate, 5... Heater, 7... Target, 9.18
...Power supply, 14...Support shaft. Applicant's agent Sato - Remote island 1 Figure 0 1 Figure 2 (C) Figure 4

Claims (1)

[Claims] A heating plate is placed inside the vacuum container to hold the object to be processed.
The vacuum processing apparatus for processing the object to be processed while controlling the heating of the object by the heating plate is characterized in that a support device is provided to support the object to be processed at a distance from the heating plate during the processing. vacuum processing equipment.