JP3847920B2 - Electrostatic adsorption hot plate, vacuum processing apparatus, and vacuum processing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electrostatic adsorption hot plate used in a vacuum processing apparatus, and a vacuum processing method using the electrostatic adsorption hot plate.
[0002]
[Prior art]
In general, when an electronic apparatus such as a semiconductor device or a liquid crystal device is manufactured, a process of forming a thin film such as an insulating film or a metal film on a substrate and a process of etching and patterning the thin film are repeatedly performed. In such a process, the substrate temperature during processing greatly affects the deposition rate and etching rate, and the heating and cooling time of the substrate accounts for a large proportion of the process time, so the substrate temperature is accurately set. The technology that can be controlled quickly is regarded as important.
[0003]
Conventionally, a hot plate with a built-in heater is used to heat the substrate. The substrate is placed on the hot plate, and the substrate is placed on the surface of the hot plate using a force such as vacuum adsorption force or mechanical pressing force. The heater is energized to generate heat by heating and the substrate is heated by heat conduction. When cooling, the energization to the heater is stopped and the cooling water is circulated on the back of the hot plate to accumulate on the substrate. The generated heat is discharged by cooling water. Therefore, the better the adhesion between the hot plate and the substrate, the higher the temperature raising / lowering speed of the substrate and the better the temperature controllability.
[0004]
However, when the substrate is heated and cooled in a vacuum atmosphere, the vacuum adsorption force cannot be used. Further, when a mechanical pressing force is used, there is a problem that a thin film adheres to the pressing member and becomes a dust generation source, or the processing of the substrate surface becomes non-uniform.
[0005]
Therefore, in recent years, an electrostatic adsorption hot plate provided with an electrostatic adsorption mechanism has been adopted, and heating and cooling are performed by bringing the substrate into close contact with the surface of the hot plate by an electrostatic adsorption force in a vacuum atmosphere.
[0006]
A conventional electrostatic adsorption hot plate will be described with reference to FIGS. 4 (a) and 4 (b). Reference numeral 110 in FIG. 1A denotes a vacuum processing apparatus that forms a thin film by sputtering, and includes a vacuum chamber 107.
[0007]
A target holder 112 is disposed on the upper portion of the vacuum chamber 107, and an electrostatic adsorption hot plate 101 is disposed on the lower portion, and is screwed and fixed onto the bottom wall of the vacuum chamber 107 with bolts 114.
[0008]
Electrostatic adsorption hot plate 101 is constituted by a disk-shaped insulating material, on the surface side of the interior, as shown in the plan view of FIG. (B), the electrostatic adsorption pattern 102 ₁ semicircular, 102 ₂ are provided in pairs on the left and right.
[0009]
The electrostatic adsorption patterns 102 ₁ and 102 ₂ are made of a conductive material, and a substrate 108 is placed on the electrostatic adsorption hot plate 101 and a voltage is applied between the left and right electrostatic adsorption patterns 102 ₁ and 102 _2. When applied, an electrostatic adsorption force is generated between the substrate 108 and the electrostatic adsorption patterns 102 ₁ and 102 ₂ , so that the substrate 108 can be brought into close contact with the surface of the electrostatic adsorption hot plate 101.
[0010]
When a thin film is formed on the surface of the substrate 108 by the vacuum processing apparatus 110, the vacuum chamber 107 is evacuated from the vacuum exhaust port 119, and the substrate 108 is placed on the electrostatic adsorption hot plate 101 provided in the vacuum chamber 107. , And a voltage is applied to the electrostatic adsorption patterns 102 ₁ and 102 ₂ to electrostatically adsorb the substrate 108.
[0011]
A heater 106 is provided on the bottom side of the electrostatic adsorption hot plate 101. After the vacuum chamber 107 reaches a predetermined degree of vacuum, the heater 106 is energized to generate heat, and the electrostatic adsorption hot plate 101 is heated. When the whole is heated, the substrate 108 is heated by heat conduction.
[0012]
When the substrate 108 rises in temperature and reaches a predetermined temperature, a sputtering gas is introduced from the gas introduction port 111, and a voltage is applied using the target holder 112 provided on the ceiling of the vacuum chamber 107 as a cathode electrode and is held by the target holder 112. The formed target 113 is sputtered, and thin film formation on the surface of the substrate 108 is started.
[0013]
During sputtering, the temperature of the substrate 108 is monitored, the amount of current supplied to the heater 106 is controlled, and the temperature of the substrate 108 is kept constant.
[0014]
When the thin film is formed to a predetermined thickness, the cooling water is circulated in a cooling mechanism (not shown) provided on the vacuum chamber 107 side, the energization to the heater 106 is stopped, and the substrate 108 is cooled. When the temperature of the substrate 108 is lowered to a predetermined temperature, the substrate 108 is taken out of the vacuum chamber 107, and the thin film forming operation in the vacuum processing apparatus 110 is finished.
[0015]
As described above, when the electrostatic adsorption hot plate 101 is used, vacuum processing such as thin film formation and etching can be performed while controlling the temperature of the substrate 108 in a vacuum atmosphere.
[0016]
However, since the above-described conventional electrostatic adsorption hot plate 101 is fixed to the bottom wall of the vacuum chamber 107, the heat generated from the heater 106 flows out to the bottom wall side of the vacuum chamber 107, and the substrate 108 is removed. There is a problem that it takes time to raise the temperature.
[0017]
Moreover, since the electrostatic adsorption hot plate 101 needs to be removed from the vacuum chamber 107 when performing maintenance such as cleaning, the electrostatic adsorption hot plate 101 is fixed by the bolt 114, so that heat easily flows through the bolt 114, and the substrate 108 When heating or cooling, there is a problem that the heat distribution of the electrostatic adsorption hot plate 101 becomes non-uniform, and the temperature of the region 118 on the bolt 114 of the substrate 108 tends to be low, as shown in FIG.
[0018]
On the other hand, when the electrostatic adsorption hot plate 101 is merely placed on the bottom wall of the vacuum chamber 107 without using the bolt 114, the adhesion between the electrostatic adsorption hot plate 101 and the vacuum chamber 107 is deteriorated, Thermal resistance will increase.
[0019]
When the thermal resistance between the electrostatic adsorption hot plate 101 and the vacuum chamber 107 is large, the heat generated from the heater 106 does not flow out to the vacuum chamber 107 side, which is advantageous when heating the substrate 108. In recent sputtering processes, the power input to the target 113 tends to increase in order to increase the film formation rate. Therefore, the substrate 108 is heated by sputtering particles incident on the surface in a large amount during the thin film formation, and even if the heater 106 stops generating heat, the substrate 108 is likely to be overheated during the thin film formation. When the thermal resistance between the plate 101 and the vacuum chamber 107 is large, there is a problem that the tendency becomes stronger.
[0020]
[Problems to be solved by the invention]
The present invention was created in view of the disadvantages of the prior art described above, and an object of the present invention is to provide a technique capable of increasing the temperature raising / lowering speed of the substrate and a technique capable of accurately controlling the substrate temperature.
[0021]
[Means for Solving the Problems]
In order to achieve the above-mentioned object, the invention according to claim 1 is provided on the mounting surface side in the plate main body in which the mounting surface on which the workpiece is mounted is formed, and in the plate main body. A first electrostatic adsorption pattern, a second electrostatic adsorption pattern provided on the opposite side of the mounting surface within the plate body, the first electrostatic adsorption pattern, and the second static adsorption pattern. have a heater provided between the chuck pattern, said plate body includes a first member including said said first electrostatic adsorption pattern heater, first includes the second electrostatic chuck pattern An electrostatic attraction hot plate having two members, wherein the first member and the second member are configured to be separable .
A second aspect of the present invention is the electrostatic adsorption hot plate according to the first aspect , wherein a conductive coating is provided on the bottom surface of the first member.
According to a third aspect of the present invention, when a voltage is applied to the second electrostatic adsorption pattern in a state where the second member is disposed on the plate support base, the second member is the plate support base. The electrostatic attraction hot plate according to claim 1, wherein the electrostatic attraction hot plate is configured to be electrostatically attracted to the surface.
Invention of Claim 4 has a vacuum vessel, the plate support stand arrange | positioned in the said vacuum vessel, and the electrostatic adsorption hotplate of any one of Claim 1 or Claim 2, The second member is disposed on the plate support, and the second member is configured to be electrostatically attracted to the plate support when a voltage is applied to the second electrostatic adsorption pattern. It is a vacuum processing apparatus.
Invention of Claim 5 has a vacuum vessel, the plate support stand arrange | positioned in the said vacuum vessel, and the electrostatic adsorption hotplate of any one of Claim 1 or Claim 2, The second member is a vacuum processing apparatus that is tightly fixed on the plate support provided in the vacuum chamber.
According to a sixth aspect of the present invention, the electrostatic adsorption hot plate according to any one of the first to third aspects is disposed in the vacuum chamber, or the fourth aspect of the present invention is any one of the fourth or fifth aspect. A vacuum processing method for processing a workpiece in a vacuum atmosphere using the vacuum processing apparatus of claim 1, wherein the workpiece is placed on the mounting surface of the electrostatic adsorption hot plate and the heater is energized. And a voltage application state to the first and second electrostatic attraction patterns to control the temperature of the workpiece.
According to a seventh aspect of the present invention, when the workpiece is heated by the heater , the voltage application to the second electrostatic adsorption pattern is canceled, and the workpiece is moved by the first electrostatic adsorption pattern. The vacuum processing method according to claim 6, wherein a voltage is applied to the first and second electrostatic adsorption patterns when electrostatically attracting and cooling the workpiece.
[0022]
In the electrostatic attraction hot plate of the present invention, when a voltage is applied to the first electrostatic attraction pattern, the workpiece is electrostatically adsorbed on the mounting surface of the plate body and is in close contact with the mounting surface. On the other hand, when a voltage is applied to the second electrostatic adsorption pattern, the electrostatic adsorption hot plate is electrostatically adsorbed to another member that supports and places the electrostatic adsorption hot plate itself.
[0023]
The electrostatic adsorption hot plate is generally placed on the wall surface (bottom wall) of the vacuum chamber. However, the electrostatic adsorption hot plate is not applied to the second electrostatic adsorption pattern and the electrostatic adsorption is released. And the adhesion between the vacuum chamber wall and the heat conduction deteriorates. Therefore, if the heater is energized and heated in that state, the heat of the electrostatic adsorption hot plate does not escape to the vacuum chamber.
[0024]
On the other hand, when a voltage is applied to the second electrostatic adsorption pattern and the electrostatic adsorption hot plate is electrostatically adsorbed to the vacuum chamber wall surface, the thermal conductivity of the electrostatic adsorption hot plate is increased, and the heat of the plate body is evacuated. It escapes to the tank side and can improve the heat dissipation of the electrostatic adsorption hot plate.
[0025]
Such electrostatic adsorption hot plate, or molding the plate body on one plate, as in the invention of claim 3, wherein said plate body, including said said first electrostatic adsorption pattern heater A first member and a second member including the second electrostatic adsorption pattern may be used, and the first member and the second member may be separable.
[0026]
When forming the plate body in a single plate, the second electrostatic adsorption pattern, and the plate body of the electrostatic adsorption hot plate, but it adhesiveness between the arranged vacuum chamber walls that are controlled, claims According to the third aspect of the invention, the adhesion between the first member and the second member constituting the plate body is controlled by the second electrostatic adsorption pattern.
[0027]
In any case, if the application of voltage to the second electrostatic pattern is stopped and the contact state is released, the heat of the heater hardly flows out to the vacuum chamber side. Conversely, when a voltage is applied to the second electrostatic pattern, the thermal resistance from the workpiece side to the vacuum chamber side is reduced, and heat dissipation can be improved.
[0028]
This second member can also be configured so as to be tightly fixed to the wall surface of the vacuum chamber . The wall surface of the vacuum chamber may be a bottom wall or a ceiling. In the case of a ceiling, support means may be provided so that the first member does not fall.
[0029]
In addition, such a 2nd member can also be comprised so that a water-cooled pipe | tube may be incorporated in the inside and it can cool.
[0030]
Furthermore , a vacuum processing apparatus can be configured by providing a second member in the vacuum chamber in advance.
[0031]
When using the electrostatic chucking hot plate or vacuum processing apparatus described above, the workpiece is placed on the mounting surface of the electrostatic chucking hot plate, the heater is energized, and the first and second electrostatic chucking patterns When controlling the voltage application state to the first electrostatic adsorption pattern, if the voltage is not applied to the second electrostatic adsorption pattern, the temperature of the workpiece rises when the heater is energized Easy to make.
[0032]
On the other hand, if a voltage is applied to the first electrostatic adsorption pattern and the second electrostatic adsorption pattern, the temperature of the workpiece is easily lowered.
[0033]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of an electrostatic adsorption hot plate and a vacuum processing method according to the present invention will be described below with reference to the accompanying drawings.
[0034]
Referring to FIGS. 1A and 1B, reference numeral 1 denotes an electrostatic adsorption hot plate as an example of the present invention, and has a plate body 9. The plate body 9 is formed by molding a heat-resistant insulating material into a single disk shape, and a pair of first electrostatic adsorption patterns 2 ₁ made of a conductive material are formed in the vicinity of the upper surface inside the plate body 9. 2 ₂ are arranged. In addition, a pair of second electrostatic adsorption patterns 4 ₁ and 4 ₂ made of a conductive material are disposed in the vicinity of the inner lower surface. The first electrostatic adsorption patterns 2 ₁ and 2 ₂ are a pair of semicircular patterns, and the second electrostatic adsorption patterns 4 ₁ and 4 ₂ are also semicircular patterns. Are paired in pairs.
[0035]
Between the first electrostatic adsorption patterns 2 ₁ and 2 ₂ and the second electrostatic adsorption patterns 4 ₁ and 4 _2, a spiral heater 6 made of a resistance heating element is provided. The first and second electrostatic adsorption patterns 2 ₁ , 2 ₂ , 4 ₁ , and 4 ₂ are connected to the respective patterns, and are led out of the plate body 9 and connected to a power source. Yes.
[0036]
The surface of the plate main body 9 on the first electrostatic adsorption pattern 2 ₁ , 2 ₂ side is formed flat, and the surface serves as a placement surface 3 so that a plate-like workpiece can be placed thereon. Yes. Further, the surface of the plate body 9 on the second electrostatic adsorption pattern 4 ₁ , 4 ₂ side is also formed flat, and is configured to be placed on a plate support 15 described later as a bottom surface 5.
[0037]
A method of processing a workpiece using the electrostatic adsorption hot plate 1 will be described.
Referring to FIG. 2, reference numeral 10 denotes a vacuum processing apparatus that forms a thin film by sputtering, and includes a vacuum chamber 7.
[0038]
The vacuum chamber 7 is provided with a gas inlet 11 and a vacuum exhaust port 19. A vacuum pump (not shown) is connected to the vacuum exhaust port 19 so that the inside of the vacuum chamber 7 can be evacuated. Yes. The gas inlet 11 is connected to a gas cylinder (not shown) so that a desired kind of gas can be introduced into the vacuum chamber 7.
[0039]
A target holder 12 is provided on the ceiling side of the vacuum chamber 7, and a target 13 is held on the target holder 12.
[0040]
A plate support 15 is disposed on the bottom wall side of the vacuum chamber 7, the surface of the plate support 15 is formed flat, and the bottom surface 5 side of the plate body 9 is disposed on the surface of the plate support 15. The placement surface 3 is configured to be substantially horizontal.
[0041]
In a state where the inside of the vacuum chamber 7 is evacuated from the vacuum exhaust port 19, a substrate 8 as a workpiece is placed on the placement surface 3, and a voltage is applied between the first electrostatic adsorption patterns 2 ₁ and 2 _2. Then, the substrate 8 is electrostatically attracted to the plate body 9 by electrostatic force and is brought into close contact with the placement surface 3. Next, the heater 6 is energized to generate heat.
[0042]
At this time, a voltage is applied between the first electrostatic adsorption patterns 2 ₁ , 2 ₂ , and the substrate 8 is brought into close contact with the mounting surface 3, while the second electrostatic adsorption patterns 4 ₁ , 4 _2. If no voltage is applied between them and the electrostatic adsorption hot plate 1 is placed on the plate support 15 by its own weight, the thermal resistance between the substrate 8 and the plate body 9 is small, and the plate body The thermal resistance between 9 and the plate support 15 increases.
[0043]
Therefore, the heat generated from the heater 6 does not flow out to the plate support 15 side but is effectively transmitted to the substrate 8, so that the rate of temperature rise of the substrate 8 can be increased.
[0044]
After the substrate 8 is heated and reaches a predetermined temperature, a sputtering gas such as argon gas is introduced from the gas inlet 11. When a voltage is applied using the target holder 12 as a cathode electrode when the inside of the vacuum chamber 7 is stabilized at a predetermined pressure, high-density plasma is generated in the vicinity of the surface of the target 13, the target 13 is sputtered, and sputtered particles jump out of the surface. . When the sputtered particles adhere to the surface of the substrate 8, thin film formation is started.
[0045]
By the way, in the sputtering process as described above, the input power to the target 13 is increased in order to increase the film forming speed. Therefore, the substrate 8 is heated by the incident sputtering particles, and the superheated state is formed during the thin film formation. It may become.
[0046]
In the present invention, a water-cooled tube 16 is provided in the plate support 15, and cooling water is circulated in the water-cooled tube 16 during film formation on the substrate 8 to keep the plate support 15 at a low temperature. . The surface temperature of the substrate 8 during film formation is monitored by a temperature measuring device such as an infrared thermometer, and the energization to the heater 6 is stopped when the temperature of the substrate 8 exceeds a specified temperature. At this time, a voltage is applied between the first electrostatic attraction patterns 2 ₁ and 2 ₂ and between the second electrostatic attraction patterns 4 ₁ and 4 ₂ , and the substrate 8 to the plate support 15 Keep the thermal resistance low. Therefore, the heat applied to the substrate 8 is efficiently radiated to the plate support 15 and the temperature of the substrate 8 can be quickly lowered.
[0047]
When the temperature of the substrate 8 falls below a specified temperature, the application of voltage to the second electrostatic adsorption patterns 4 ₁ , 4 ₂ is stopped, the heat hardly flows out from the plate body 9, and the substrate 8 is heated. . At this time, energization to the heater 6 may be resumed as necessary.
[0048]
In this way, by controlling the voltage application to the first and second electrostatic adsorption patterns 2 ₁ , 2 ₂ , 4 ₁ , 4 ₂ and the energization to the heater 6, the temperature of the substrate 8 is kept constant. A thin film can be formed on the surface.
[0049]
When a thin film having a predetermined thickness is formed on the surface of the substrate 8, the introduction of the sputtering gas and the energization to the heater 6 are stopped, the pair of first electrostatic adsorption patterns 2 ₁ , 2 _2, and the pair of second static electricity. A voltage is applied between the electroadsorption patterns 4 ₁ and 4 ₂ to bring the substrate 8, the plate body 9, and the plate support 15 into close contact with each other, and the heat accumulated in the substrate 8 is radiated to the substrate support 15 side. When the substrate 8 is cooled to a predetermined temperature, it is carried out of the vacuum chamber 7 and the thin film forming operation in the vacuum processing apparatus 10 is finished.
[0050]
When the substrate 8 is cooled, the surface temperature of the substrate 8 is monitored by the above-described temperature measuring device, and voltage application to the first and second electrostatic adsorption patterns 2 ₁ , 2 ₂ , 4 ₁ , 4 ₂ is controlled. Since the heat dissipation state of the substrate 8 can be controlled, the temperature drop rate can be controlled to a desired value.
[0051]
Next, another embodiment of the present invention will be described.
Reference numeral 31 in FIG. 3 denotes an electrostatic adsorption hot plate according to another embodiment of the present invention. The electrostatic adsorption hot plate 31 has a plate body 39, and first electrostatic adsorption patterns 32 ₁ and 32 ₂ and second electrostatic adsorption patterns 34 ₁ and 34 ₂ are provided therein. A heater 36 composed of a resistance heating element is provided between the first and second electrostatic adsorption patterns 32 ₁ , 32 ₂ , 34 ₁ , 34 ₂ .
[0052]
Electrostatic adsorption hot plate 31 includes a first member 39 ₁ made of an insulating member, likewise, is composed of the second member 39 ₂ made of an insulating member, the first member 39 ₁ and the The second member 39 ₂ has a disk shape of the same size and is configured to be separable from each other.
[0053]
The first electrostatic adsorption patterns 32 ₁ , 32 ₂ are provided in the vicinity of the surface inside the first member 39 ₁ , and the heater 36 is provided inside the first member 39 ₁ , and the first member 39 ₁ of the bottom surface, the conductive member is coated.
[0054]
The second electrostatic adsorption patterns 34 ₁ , 34 ₂ are provided inside the second member 39 ₂ , and the first and second electrostatic adsorption patterns 32 ₁ , 32 ₂ , 34 ₁ , 34 ₂ are arranged in the respective patterns. The connected conducting wire and both ends of the heater 36 are led out of the plate body 39 and configured to be connected to a power source.
[0055]
The first member 39 _first surface (mounting surface) 33 ₁ and the bottom 35 _1, the second member 39 _{and second} surface 33 ₂ and the bottom surface 35 ₂ is flat shaped, the vacuum chamber 7 of FIG. 2 When the second member 39 ₂ and the first member 39 ₁ are arranged in this order on the plate support 15, the surface of the first member 39 ₁ becomes the mounting surface 33 ₁ , and the plate-like workpiece is removed. It is configured so that it can be placed.
[0056]
In this state, when the substrate is placed on the placement surface 33 ₁ and a voltage is applied between the first electrostatic adsorption patterns 32 ₁ and 32 ₂ , the substrate is electrostatically attracted to the first member 39 ₁ , and the placement surface 33 ₁ is in close contact with the unit.
[0057]
In this case, when a voltage is applied between the second electrostatic adsorption patterns 34 ₁ , 34 ₂ , the second member 39 ₂ is electrostatically adsorbed to the plate support 15, and at the same time, the first member 39 ₁ is placed on the bottom surface. by coating the conductive member is provided, is electrostatically attracted to the second member 39 ₂ (adsorbate is not electrically conductive, when the insulating property, or the suction force is not expressed at all, It is weak even if expressed). Therefore, between the plate support base 15 of the second member 39 _2, and, between the second member 39 ₂ and the first member 39 ₁ it is close contact. Accordingly, the thermal resistance between the substrate and the plate support 15 is reduced.
[0058]
On the other hand, when no voltage is applied between the second electrostatic attraction patterns 34 ₁ and 34 _2, between the plate support 15 and the second member 39 ₂ , and between the second member 39 ₂ and the first member 39. between ₁ does not contact, the thermal resistance is large state between the first member 39 ₁ to the plate support table 15.
[0059]
Therefore, when it is desired to raise the temperature of the substrate, the first electrostatic adsorption pattern 32 _1, 32 a voltage is applied between ₂ and substrate in close contact with the first member 39 _1, the second electrostatic adsorption pattern 34 ₁ , between 34 ₂ energizes the heater 36 in a state where no voltage is applied, to generate heat.
[0060]
On the other hand, when it is desired to lower the temperature of the substrate, a voltage is applied between the first electrostatic adsorption patterns 32 ₁ and 32 _{2 and} between the second electrostatic adsorption patterns 34 ₁ and 34 ₂ , and the heat of the substrate is transferred to the plate support 15. Let go to the side.
[0061]
Thus, even when the plate main body 39 uses the electrostatic adsorption hot plate 31 composed of the first member 39 ₁ and the second member 39 ₂ , the temperature raising / lowering speed is increased, and the controllability of the substrate temperature is increased. Is good.
[0062]
When using this electrostatic adsorption hot plate 31, leave tightly fixed in advance on the second member 39 ₂ of the plate support table 15, it may have been a component of the vacuum processing apparatus 10. In this case, if no voltage is applied to the second electrostatic adsorption pattern 34 _1, 34 _2, first member 39 ₁ and only the thermal resistance between the second member 39 ₂ is increased.
[0063]
In addition, the electrostatic adsorption pattern can be used in various shapes. For example, comb-shaped electrostatic adsorption patterns 2a and 2b may be used as in the electrostatic adsorption hot plate 3 of FIG. This electrostatic adsorption pattern can be used for both the first and second electrostatic adsorption patterns of the electrostatic adsorption hot plates 1 and 31.
[0064]
Although the sputtering apparatus has been described above, the present invention relates to a vacuum processing apparatus that processes a substrate in a vacuum atmosphere, such as a CVD apparatus and an etching apparatus, an electrostatic adsorption hot plate used in the vacuum processing apparatus, a CVD method, and an etching method. Widely including vacuum processing methods.
[0065]
【The invention's effect】
According to the present invention, the temperature raising / lowering speed of the substrate is increased, and the vacuum processing time can be shortened. In addition, the temperature controllability of the substrate is improved, and a thin film with good quality can be formed.
[Brief description of the drawings]
1A and 1B are electrostatic adsorption hot plates according to an embodiment of the present invention. FIG. 2 is a vacuum processing apparatus using the electrostatic adsorption hot plate. FIG. 3 is another embodiment of the present invention. FIG. 4 is a front cross-sectional view of an electrostatic adsorption hot plate according to the embodiment. FIG. 4 is another example of an electrostatic adsorption pattern. FIG. 5 (a) is a front view showing the whole of a conventional vacuum processing apparatus. Fig. 6 is a plan view showing an electrostatic adsorption pattern. Fig. 6 is a diagram for explaining problems in the prior art.
1, 31 ... Electrostatic adsorption hot plate 2 ₁ , 2 ₂ , 32 ₁ , 32 ₂ ... First electrostatic adsorption pattern ₃ , 33 ... Placement surface 4 ₁ , 4 ₂ , 34 ₁ , 34 ₂ ... Second electrostatic adsorption pattern 5, 35 ... Bottom 6, 36 ... Heater 7 ... Vacuum chamber 8 ... Substrate 9, 39 ... Hot plate main body 39 ₁ ... First member 39 ₂ ... Second Element

Claims (7)

A plate body on which a mounting surface for mounting a workpiece is formed; and
Inside the plate body, a first electrostatic adsorption pattern provided on the mounting surface side, and
Inside the plate body, a second electrostatic adsorption pattern provided on the surface side opposite to the placement surface,
Have a heater provided between the said and the first electrostatic chuck pattern second electrostatic adsorption pattern,
The plate body has a first member including the first electrostatic adsorption pattern and the heater, and a second member including the second electrostatic adsorption pattern,
The electrostatic adsorption hot plate according to claim 1, wherein the first member and the second member are configured to be separable . The electrostatic adsorption hot plate according to claim 1, wherein a conductive coating is provided on a bottom surface of the first member. When a voltage is applied to the second electrostatic attraction pattern in a state where the second member is disposed on the plate support, the second member is electrostatically attracted to the plate support. The electrostatic adsorption hot plate according to claim 1, which is configured. A vacuum chamber;
A plate support arranged in the vacuum chamber;
The electrostatic attraction hot plate according to claim 1 or 2,
The second member is disposed on a plate support;
The vacuum processing apparatus configured such that the second member is electrostatically attracted to the plate support when a voltage is applied to the second electrostatic adsorption pattern. A vacuum chamber;
A plate support arranged in the vacuum chamber;
The electrostatic attraction hot plate according to claim 1 or 2,
The second member is a vacuum processing apparatus that is tightly fixed on the plate support provided in the vacuum chamber. The electrostatic adsorption hot plate according to any one of claims 1 to 3 is disposed in a vacuum chamber, or the vacuum processing apparatus according to any one of claims 4 or 5 is used to A vacuum processing method for processing a workpiece in a vacuum atmosphere,
Place the workpiece on the placement surface of the electrostatic adsorption hot plate,
A vacuum processing method, wherein the temperature of the workpiece is controlled by controlling energization to the heater and voltage application state to the first and second electrostatic adsorption patterns. When heating the workpiece by the heater, cancel the voltage application to the second electrostatic adsorption pattern , electrostatically attract the workpiece by the first electrostatic adsorption pattern,
The vacuum processing method according to claim 6, wherein when cooling the workpiece, a voltage is applied to the first and second electrostatic adsorption patterns.

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