JPH0746437Y2 - Electrostatic chuck - Google Patents
Electrostatic chuckInfo
- Publication number
- JPH0746437Y2 JPH0746437Y2 JP4469689U JP4469689U JPH0746437Y2 JP H0746437 Y2 JPH0746437 Y2 JP H0746437Y2 JP 4469689 U JP4469689 U JP 4469689U JP 4469689 U JP4469689 U JP 4469689U JP H0746437 Y2 JPH0746437 Y2 JP H0746437Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- internal electrode
- fixing base
- wafer
- electrostatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Jigs For Machine Tools (AREA)
Description
【考案の詳細な説明】 （産業上の利用分野） 本考案は半導体ウェハー等の試料を静電力によって吸着
・固定する静電チャックに関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to an electrostatic chuck that attracts and fixes a sample such as a semiconductor wafer by electrostatic force.
（従来の技術） LSIチップ製造工程において、シリコンウェハー等の半
導体ウェハーにドライエッチングやCVD処理を行うに
は、減圧状態としたチャンバー内に配置した静電チャッ
クの上面にウェハーを吸着・固定して行うようにしてい
る。(Prior Art) In the LSI chip manufacturing process, in order to perform dry etching or CVD treatment on a semiconductor wafer such as a silicon wafer, the wafer is sucked and fixed on the upper surface of an electrostatic chuck placed in a chamber in a reduced pressure state. I am trying to do it.
かかる静電チャックは特開昭59-152636号、特開昭60-19
7335号或いは第３図Ａにしめされるように、セラミック
製の基板10の上面にプリント、蒸着等の手段によって内
部電極11を形成し、この内部電極11を誘電層12で覆い、
更に基板10を固定台13上にガタ付きなく取付けるように
している。また、ドライエッチングやCVD処理によって
ウェハーＷが高温になるのを防止すべく、第３図Ｂに示
すように固定台13内に冷却水通路14を形成し、この固定
台13と基板10とをビス15等にて固着するようにしてい
る。Such electrostatic chucks are disclosed in JP-A-59-152636 and JP-A-60-19.
As shown in No. 7335 or FIG. 3A, an internal electrode 11 is formed on the upper surface of a ceramic substrate 10 by a method such as printing or vapor deposition, and the internal electrode 11 is covered with a dielectric layer 12.
Further, the substrate 10 is mounted on the fixed base 13 without play. Further, in order to prevent the wafer W from being heated to a high temperature by dry etching or CVD processing, a cooling water passage 14 is formed in the fixed base 13 as shown in FIG. 3B, and the fixed base 13 and the substrate 10 are connected to each other. It is fixed with screws 15 etc.
（考案が解決しようとする課題） 上述した静電チャックの径と加工されるウェハーの径と
が大きく異るとウェハー表面の処理が不均一になるた
め、ウェハー径に応じた寸法の静電チャックを選んで使
用する必要がある。そして、選定した静電チャックの寸
法に合せて固定台を変えなければならず面倒である。ま
た、固定台に水冷ジャケットとしての機能を持たせた第
３図Ｂに示したような構造では、基板10から固定台13へ
の熱伝導を良くするため蓋板10下面と固定台13上面を密
着させるためビス15を用いているが、静電チャックの大
きさが変わるとビスの取付け位置も変わり、別の固定台
を用意しなければならない。更にビス15を用いることで
ある程度密着性を高め得るが十分とはいえない。(Problems to be solved by the invention) If the diameter of the electrostatic chuck and the diameter of the wafer to be processed are significantly different from each other, the surface treatment of the wafer becomes non-uniform. It is necessary to select and use. Then, the fixing base must be changed according to the size of the selected electrostatic chuck, which is troublesome. Further, in the structure as shown in FIG. 3B in which the fixing base has a function as a water cooling jacket, in order to improve heat conduction from the substrate 10 to the fixing base 13, the lower surface of the lid plate 10 and the upper surface of the fixing base 13 are improved. Although the screw 15 is used for close contact, when the size of the electrostatic chuck changes, the screw mounting position also changes, and another fixing base must be prepared. Further, the use of screw 15 can improve the adhesion to some extent, but it cannot be said to be sufficient.
（課題を解決するための手段） 上記課題を解決すべく本考案は、静電チャックに試料を
吸着するための上部内部電極と、静電チャック自体を固
定台に吸着固するための下部内部電極とを備えた。(Means for Solving the Problems) In order to solve the above problems, the present invention provides an upper internal electrode for adsorbing a sample on an electrostatic chuck and a lower internal electrode for adsorbing and fixing the electrostatic chuck itself on a fixing base. Equipped with.
（作用） 本考案の静電チャックは下部内部電極に通電すること
で、固定台に静電的に強固に吸着・固定される。(Function) The electrostatic chuck of the present invention is electrostatically and firmly attracted and fixed to the fixing base by energizing the lower internal electrode.
そのため、静電チャックの交換が容易になると共に、静
電チャックの全面が固定台と強く接触するので、冷却効
果が高くなる。Therefore, replacement of the electrostatic chuck is facilitated, and the entire surface of the electrostatic chuck is in strong contact with the fixing base, so that the cooling effect is enhanced.
（実施例） 以下に本考案の実施例を添付図面に基いて説明する。(Embodiment) An embodiment of the present invention will be described below with reference to the accompanying drawings.
第１図及び第２図はいずれも本考案に係る静電チャック
の断面図であり、第１図は静電チャックと固定台とが同
程度の大きさの場合を示し第２図は静電チャックが固定
台に比べて小さい場合を示す。この静電チャックはセラ
ミック製基板１を複数のセラミック層1a…を積層するこ
とで形成し、これらセラミック層1a,1a間に上部内部電
極２と下部内部電極３を設けている。そして、基板１は
固定台４上に載置され、この固定台４はステンレス等の
導電性材料からなり、その中央には貫通穴５を、また周
囲には冷却水を通す環状通路６を形成し、貫通穴５を介
して前記内部電極2,3をリード線によって別々の直流電
源7,8に接続している。1 and 2 are cross-sectional views of the electrostatic chuck according to the present invention. FIG. 1 shows a case where the electrostatic chuck and the fixing base are approximately the same size, and FIG. The case where the chuck is smaller than the fixed base is shown. This electrostatic chuck is formed by laminating a plurality of ceramic layers 1a on a ceramic substrate 1, and an upper internal electrode 2 and a lower internal electrode 3 are provided between these ceramic layers 1a, 1a. The substrate 1 is placed on a fixed base 4, which is made of a conductive material such as stainless steel, and has a through hole 5 in the center and an annular passage 6 around which the cooling water is passed. Then, the internal electrodes 2 and 3 are connected to separate DC power sources 7 and 8 by lead wires through the through holes 5.
次に以上の如き静電チャックを作成する一例を以下に述
べる。Next, an example of producing the electrostatic chuck as described above will be described below.
先ずAl2O3等を主成分とするセラミック粉末にTiO2等を
混合して調整したスラリーをドクターブレード法によっ
てテープ成形し、0.5mm厚程度のセラミックグリーンシ
ートを得る。First, a slurry prepared by mixing TiO 2 or the like with a ceramic powder containing Al 2 O 3 or the like as a main component is tape-formed by a doctor blade method to obtain a ceramic green sheet having a thickness of about 0.5 mm.
一方、タングステン等の金属粉末を有機溶媒に混ぜたペ
ーストを調整し、この金属ペーストを後に内部電極とす
べくスクリーン印刷によってセラミックグリーンシート
の所定部分に塗布する。On the other hand, a paste prepared by mixing a metal powder such as tungsten with an organic solvent is prepared, and this metal paste is applied to a predetermined portion of the ceramic green sheet by screen printing so as to form an internal electrode later.
而る後、複数のセラミックグリーンシートを重ね1500〜
1600℃で加熱する。するとセラミックグリーンシートは
焼結して前記セラミック層1aとなり、タングステンペー
ストは内部電極2,3となる。After that, stack multiple ceramic green sheets 1500 ~
Heat at 1600 ° C. Then, the ceramic green sheet is sintered to form the ceramic layer 1a, and the tungsten paste becomes the internal electrodes 2 and 3.
そして、上部内部電極２に通電することでウェハーＷを
静電力よって吸着・固定し、下部内部電極３に通電する
ことで、静電チャックが固定台４に電気的に吸着・固定
せしめられる。即ち下部内部電極３に通電することで静
電チャックは静電力よって固定されるため、第２図に示
すように固定台４の径に比べて静電チャックの径が小さ
い場合、或いはこの逆の場合であっても確実に静電チャ
ックを固定できる。Then, by energizing the upper internal electrode 2, the wafer W is attracted and fixed by electrostatic force, and by energizing the lower internal electrode 3, the electrostatic chuck is electrically attracted and fixed to the fixing base 4. That is, since the electrostatic chuck is fixed by the electrostatic force by energizing the lower internal electrode 3, when the diameter of the electrostatic chuck is smaller than the diameter of the fixing base 4 as shown in FIG. 2, or vice versa. Even in this case, the electrostatic chuck can be securely fixed.
尚、実施例にあっては固定台として水冷ジャケットを兼
ねるものを示したが、冷却水通路を設けないものであっ
てもよい。また静電チャックの作り方としてグリーンシ
ート積層法を例に挙げたがこれ以外の方法であってもよ
い。In addition, in the embodiment, the fixing table also serves as a water cooling jacket, but the cooling water passage may not be provided. Further, as the method of manufacturing the electrostatic chuck, the green sheet laminating method is described as an example, but other methods may be used.
又、本実施例では、ウェハーを保持する内部電極は１つ
であるが、内部電極を複数にし、この電極間に電圧を印
加することでウェハーを吸着・保持するようにしてもよ
い。Further, in the present embodiment, the number of internal electrodes holding the wafer is one, but a plurality of internal electrodes may be used and a voltage may be applied between the electrodes to adsorb and hold the wafer.
（考案の効果） 以上に説明した如く本考案に係る静電チャックは、静電
チャックの基板内に静電チャック自体を固定台に電気的
に吸着・固定せしめる内部電極を設けたので、吸着する
ウェハーの寸法に合せて静電チャックの径を変更して
も、静電チャックを固定する固定台はそのままで済み、
ウェハーの径変更等に容易に対処することができる。(Effect of the Invention) As described above, the electrostatic chuck according to the present invention is provided with the internal electrodes for electrically adsorbing and fixing the electrostatic chuck itself to the fixing base in the substrate of the electrostatic chuck, so that the electrostatic chuck attracts the electrostatic chuck. Even if the diameter of the electrostatic chuck is changed according to the size of the wafer, the fixing base for fixing the electrostatic chuck remains the same.
It is possible to easily deal with a change in the diameter of the wafer.
また、静電チャックの全面が固定台に密に吸着されるた
め、固定台を水冷ジャケットとしているような場合には
静電チャックから固定台への伝熱が均一且つ有効になさ
れ、ウェハーの冷却効果を高めることができる。In addition, since the entire surface of the electrostatic chuck is tightly adsorbed to the fixing table, heat transfer from the electrostatic chuck to the fixing table is uniform and effective when the fixing table is a water cooling jacket, and the wafer is cooled. The effect can be enhanced.
第１図及び第２図は本考案に係る静電チャックの断面
図、第３図Ａ及びＢは従来の静電チャックの断面図であ
る。 尚、図面中１はセラミック基板、1aはセラミック層、２
は上部内部電極、３は下部内部電極、４は固定台、６は
冷却水通路、Ｗはウェハーである。1 and 2 are sectional views of an electrostatic chuck according to the present invention, and FIGS. 3A and 3B are sectional views of a conventional electrostatic chuck. In the drawing, 1 is a ceramic substrate, 1a is a ceramic layer, and 2 is a ceramic layer.
Is an upper internal electrode, 3 is a lower internal electrode, 4 is a fixed base, 6 is a cooling water passage, and W is a wafer.
Claims (2)
いて、前記固定台は導電性材料から構成され、また静電
チャックの基板内の上部には半導体ウェハー等の試料を
静電力によって吸着するための上部内部電極を設け、静
電チャックの基板内の下部には基板自体を固定台に静電
力によって吸着させる下部内部電極を設けたことを特徴
とする静電チャック。1. An electrostatic chuck mounted on a fixed base, wherein the fixed base is made of a conductive material, and a sample such as a semiconductor wafer is attracted to the upper part of the substrate of the electrostatic chuck by electrostatic force. The electrostatic chuck is characterized in that an upper internal electrode is provided, and a lower internal electrode for adsorbing the substrate itself to a fixing base by electrostatic force is provided in a lower portion of the substrate inside the electrostatic chuck.
いることを特徴とする請求項１に記載の静電チャック。2. The electrostatic chuck according to claim 1, wherein a coolant passage is formed inside the fixing base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4469689U JPH0746437Y2 (en) | 1989-04-17 | 1989-04-17 | Electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4469689U JPH0746437Y2 (en) | 1989-04-17 | 1989-04-17 | Electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02135141U JPH02135141U (en) | 1990-11-09 |
| JPH0746437Y2 true JPH0746437Y2 (en) | 1995-10-25 |
Family
ID=31558227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4469689U Expired - Lifetime JPH0746437Y2 (en) | 1989-04-17 | 1989-04-17 | Electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0746437Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10304714B2 (en) | 2015-06-11 | 2019-05-28 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Device comprising film for electrostatic coupling of a substrate to a substrate carrier |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3699349B2 (en) * | 1990-12-25 | 2005-09-28 | 日本碍子株式会社 | Wafer adsorption heating device |
| JP3662909B2 (en) * | 1990-12-25 | 2005-06-22 | 日本碍子株式会社 | Wafer adsorption heating device and wafer adsorption device |
| JPH04300138A (en) * | 1991-03-28 | 1992-10-23 | Shin Etsu Chem Co Ltd | Electrostatic chuck |
| JP2804664B2 (en) * | 1992-01-21 | 1998-09-30 | 株式会社日立製作所 | Electrostatic adsorption mechanism of sample and electron beam lithography system |
| JP3596127B2 (en) * | 1995-12-04 | 2004-12-02 | ソニー株式会社 | Electrostatic chuck, thin plate holding device, semiconductor manufacturing device, transport method, and semiconductor manufacturing method |
| JP3847920B2 (en) * | 1997-10-06 | 2006-11-22 | 株式会社アルバック | Electrostatic adsorption hot plate, vacuum processing apparatus, and vacuum processing method |
| JP4357630B2 (en) * | 1999-04-02 | 2009-11-04 | 本田技研工業株式会社 | Cutting device with cooling mechanism |
| JP2001144167A (en) * | 1999-11-12 | 2001-05-25 | Ngk Insulators Ltd | Semiconductor holder |
| JP4698097B2 (en) * | 2001-09-26 | 2011-06-08 | 京セラ株式会社 | Wafer support member |
| JP4783213B2 (en) * | 2005-06-09 | 2011-09-28 | 日本碍子株式会社 | Electrostatic chuck |
| WO2011001978A1 (en) * | 2009-07-02 | 2011-01-06 | 株式会社クリエイティブ テクノロジー | Electrostatic attracting structure and fabricating method therefor |
| KR102247439B1 (en) * | 2014-01-22 | 2021-05-03 | 가부시키가이샤 아루박 | Plasma treatment device and wafer transportation tray |
| JP2016136552A (en) * | 2015-01-23 | 2016-07-28 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus |
| JP6811144B2 (en) * | 2017-05-30 | 2021-01-13 | 東京エレクトロン株式会社 | How to operate the electrostatic chuck of a plasma processing device |
| JP6924618B2 (en) * | 2017-05-30 | 2021-08-25 | 東京エレクトロン株式会社 | Electrostatic chuck and plasma processing equipment |
| JP7478903B1 (en) * | 2022-06-28 | 2024-05-07 | 日本碍子株式会社 | Wafer placement table |
-
1989
- 1989-04-17 JP JP4469689U patent/JPH0746437Y2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10304714B2 (en) | 2015-06-11 | 2019-05-28 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Device comprising film for electrostatic coupling of a substrate to a substrate carrier |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02135141U (en) | 1990-11-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |