JPH07263527A - Electrostatic attraction device - Google Patents

Abstract

PURPOSE:To reduce a thermal influence against an article to be attracted in an electrostatic attraction device for atracting/holding a wafer in a semiconductor fabrication process. CONSTITUTION:An electrostatic attraction device is constructed to attract a wafer by making use of electrostatic force and is comprised of an electrostatic chuck 12 including an electrode part for generating electrostatic force and an insulation member 13 where the electrode part is disposed, and of a base table 14 for mounting the electrostatic chuck part 12. In the electrostatic attraction device, a protrusion 16 is provided on the base table 14 and the electrostatic chuck part 12 and the mounting part 14 are brought into diret contact with each other using the protrusion 16 and are thermally connected with each other.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chucking device, and more particularly to an electrostatic chucking device for sucking and holding a wafer in a semiconductor manufacturing process.

In recent years, in a semiconductor manufacturing process, a substrate (wafer) is often fixed using an electrostatic adsorption device and a process such as etching or thin film formation is often performed.

Further, in the etching or thin film forming process, the process is often performed in a heating atmosphere, and in this case, the electrostatically adsorbed substrate may also be heated and a thermal change may occur in the wafer.

Therefore, in order to prevent the thermal change of the wafer, it is important to efficiently dissipate the heat of the wafer by the electrostatic adsorption device that electrostatically adsorbs the substrate.

[0005]

2. Description of the Related Art FIG. 8 is a schematic diagram showing an example of a conventional electrostatic attraction device 1. As shown in the figure, a conventional electrostatic attraction device 1 generally uses a DC high voltage. The DC high-voltage electrostatic adsorption device 1 is roughly composed of an electrostatic chuck 2 and a base 3.

The electrostatic chuck 2 has a structure in which a positive electrode 5 and a negative electrode 6 which are conductive metal plates are embedded in an insulating member 9 such as ceramic. Further, the base 3 is made of metal, and the electrostatic chuck 2 is structured such that it is adhered and fixed to the base 3 with a bonding material 4 (shown in satin) such as a heat resistant adhesive or a heat resistant adhesive. There is. Conventionally, each bonding surface 2 of the electrostatic chuck 2 and the base 3 to be bonded by the bonding material 4
Both a and 3a were smooth surfaces.

Then, the positive electrode 5 and the negative electrode 6 are connected from the power source 8.
A DC voltage is applied to each of the electrodes 5 and 6 to induce dielectric polarization on the object to be adsorbed (wafer) 7 placed on the electrodes 5 and 6 via the insulating member 9, and the positive and negative polarities induced on the surface of the wafer 7 are thereby generated. The wafer 7 is attracted to the electrostatic chuck 2 by the electrostatic force of electric charges.

[0008]

However, in the above-mentioned conventional electrostatic attraction device 1, the bonding material 4 is disposed between the electrostatic chuck 2 and the base 3, so that the electrostatic chuck 2 and the base 3 are disposed. The base 3 and the base 3 are bonded to each other with a bonding material 4 interposed therebetween.

In general, the bonding material 4 has poorer thermal conductivity than the ceramics forming the insulating member 9 and the metal forming the base 3, and therefore the heat transfer efficiency from the electrostatic chuck 2 to the base 3 is poor. There was a problem.

The electrostatic adsorption device 1 is incorporated in an ion etching device or a CVD (Chemecal Vapor Deposition) device and is used to fix the wafer 7 at a predetermined position in the device. In the etching process by this ion etching apparatus, the process is often performed in a heating atmosphere. However, if the heat transfer efficiency from the electrostatic chuck 2 to the base 3 is poor as described above, the wafer 7 causes the electrostatic chuck 2 to move. The heat conducted to the base 3 cannot be radiated to the base 3, and the wafer 7 may change in heat.

Further, in the CVD apparatus, the wafer 7 may be heated to a predetermined temperature by heating the base 3 in order to accelerate the reaction rate. In this case, the electrostatic chuck 2 and the base 3 may be heated. Due to the poor heat transfer efficiency between them, the surface temperature of the insulating member 9 (the temperature of the surface on which the wafer 7 is adsorbed) varies, and a uniform thin film may not be formed.

The present invention has been made in view of the above points, and it is an object of the present invention to provide an electrostatic adsorption device capable of reducing thermal influence on an adsorbed object.

[0013]

[Means for Solving the Problems] The above problems can be solved by taking the following measures.

According to the first aspect of the present invention, the object to be attracted is attracted by utilizing the electrostatic force, and the electrode portion generating the electrostatic force and the insulating member on which the electrode portion is disposed are constituted. In the electrostatic adsorption device configured by the electrostatic chuck part and the mounting part for mounting the electrostatic chuck part,
At least the electrostatic chuck portion or the mounting portion is provided with a thermal connection portion for directly contacting and thermally connecting the electrostatic chuck portion and the mounting portion.

Further, in the invention of claim 2, the thermal connection portion is provided by forming a concave portion or a convex portion at least in the electrostatic chuck portion or the mounting portion.

According to the third aspect of the invention, the object to be attracted is attracted by utilizing the electrostatic force, and the electrode portion that generates the electrostatic force and the insulating member on which the electrode portion is disposed are provided. In an electrostatic chucking device composed of an electrostatic chuck part composed of and a mounting part for mounting the electrostatic chuck part, a good thermal conductivity is provided between the electrostatic chuck part and the mounting part. It is characterized in that a thermal connection member having a structure in which the material is formed in a mesh shape is arranged, and the electrostatic chuck portion and the mounting portion are thermally connected by this thermal connection member.

Further, the invention of claim 4 is characterized in that an adhesive having a good thermal conductivity is disposed between the electrostatic chuck portion and the mounting portion.

[0018]

By configuring the electrostatic chucking device according to the present invention as set forth in claim 1 or 2, the electrostatic chuck portion and the mounting portion are thermally directly connected by the thermal connection portion, and therefore, the electrostatic chuck. The heat transfer efficiency between the portion and the mounting portion can be improved.

Further, by constructing the electrostatic chucking device according to the invention of the above-mentioned claim 3, the electrostatic chuck portion and the mounting portion are thermally connected by the thermal connection member arranged between them. Therefore, the heat transfer efficiency between the electrostatic chuck portion and the mounting portion can be improved.

Further, by configuring the electrostatic chucking device according to the invention of the above-mentioned claim 3, the thermal conductivity of the adhesive is improved, so that the heat transfer between the electrostatic chuck part and the mounting part is further improved. The efficiency can be improved.

Therefore, when it is desired to dissipate the heat applied to the object to be adsorbed, the heat applied to the object to be adsorbed is efficiently transferred from the electrostatic chuck portion to the mounting portion. Can be prevented from rising abnormally.

When it is desired to heat the attracted body, the heat applied to the mounting portion is efficiently transferred to the electrostatic chuck portion, so that the electrostatic chuck portion is uniformly heated. Therefore, it becomes possible to uniformly heat the adsorbent.

[0023]

Embodiments of the present invention will now be described with reference to the drawings. 1 and 2 show a schematic configuration of an electrostatic chucking device 10 according to a first embodiment of the present invention, and FIG. 3 shows an application example of an RIE device (reactive ion etching device) of the electrostatic chucking device 10. 20 shows a schematic configuration when it is arranged in 20.

The RIE device 20 is generally a chamber 2
1, DC high voltage power supplies 28, 30, high frequency generator 32,
And the electrostatic adsorption device 10 and the like. The chamber 21 is made of conductive metal and is grounded.

The inside of the chamber 21 is set to a high vacuum, and a reaction gas is introduced during the etching process. The high-frequency generator 32 applies high-frequency power (for example, 13.56 MHz) to discharge in a state where the reaction gas is introduced into the chamber 21 at a predetermined gas pressure, and the chamber 21 is subjected to a gas plasma state to perform an etching process.

The electrostatic adsorption device 10 is arranged at a lower position of the RIE device 20 and adsorbs the wafer 22 which is an object to be adsorbed by electrostatic force. The electrostatic adsorption device 10 is roughly composed of an electrostatic chuck 12 and a base 14 that serves as a mounting portion for mounting the electrostatic chuck 12.

The electrostatic chuck 12 has a structure in which a positive electrode 24 and a negative electrode 26, which are conductive metal plates, are embedded inside an insulating member 13 such as ceramic having good thermal conductivity. In addition, the base 14 is formed of a metal that has electrical conductivity and good thermal conductivity. The electrostatic chuck 12 and the base 14 are bonded to each other, but the bonding structure will be described later for convenience of description.

The positive electrode 24 and the negative electrode 26 are connected to the DC high voltage power supplies 28 and 30, and the positive electrode 24 and the negative electrode 26 are connected to each other.
Is applied with a static voltage and a negative voltage is applied to the negative electrode 26.

As described above, by applying the DC voltage to the positive electrode 34 and the negative electrode 26 from the DC high voltage power supplies 28 and 30, respectively, the wafer 22 placed on the electrodes 24 and 26 via the insulating member 13 is applied. The wafer 22 is attracted to the electrostatic chuck 12 by an electrostatic force of positive and negative charges induced on the surface of the wafer 22 by causing dielectric polarization.

Next, the structure of joining the electrostatic chuck 12 and the base 14 which characterize the present invention will be described.

In this embodiment, as shown in FIGS. 1 and 2, on the surface of the base 14 facing the electrostatic chuck 12,
It is characterized in that a large number of convex portions 16 serving as thermal connection portions are formed. The convex portion 16 is formed, for example, by subjecting the metal base 14 to machining such as cutting, and, for example, when the electrostatic adsorption device 10 is configured to adsorb the φ22 inch wafer 22. Is formed about 500 pieces. This is a configuration in which about 3 pieces are arranged per 1 cm ² . For convenience of illustration, the projection 16 is drawn larger than the actual size in the drawing.

The shape of each convex portion 16 is, for example, a cylindrical shape having a height (that is, a cutting depth) of about 0.3 mm and a diameter of about 1 mm. As described above, it is relatively easy to form the cylindrical convex portion 16 by machining the upper portion of the disk-shaped base 14. Further, when the machining is performed, the cutting depth and the diameter dimension do not need to be so precise, so that the convex portion 16 can be easily formed.

In order to bond the electrostatic chuck 12 to the base 14 having the above-mentioned structure, first, the convex portion 16 of the base 14 is formed so that the adhesive 18 is applied to the relatively concave portion.
And then the electrostatic chuck 1 on top of the base 14.
Stack two. As the adhesive 18 used at this time, for example, a thermosetting adhesive is selected. Further, the joint surface 12a of the electrostatic chuck 12 with the base 14 is a smooth surface as in the conventional case.

Next, the stacked electrostatic chuck 1
A jig is attached so as to sandwich 2 and the base 14. At this time, the force of sandwiching the electrostatic chuck 12 and the base 14 by the jig is, for example, 40 to 50 kg. Then, the bonded body of the electrostatic chuck 12 and the base 14 is placed in a heating furnace while being pressed by the jig, and heat treatment is performed at 120 ° C. for about 1 hour and 30 minutes.

By this heat treatment, each convex portion 1 of the base 14 is
The adhesive 18 applied between 6 and 6 is cured by heat, so that the electrostatic chuck 12 and the base 14 are joined by the adhesive 18.

FIG. 2 is an enlarged sectional view showing a portion where the electrostatic chuck 12 and the base 14 are joined. As described above, since the convex portion 16 is formed on the base 14, the convex portion 16 adheres to the bonding surface 12 of the electrostatic chuck 12 with the adhesive 18 when the electrostatic chuck 12 is bonded to the base 14. Direct contact without going through.

Further, as described above, since the electrostatic chuck 12 and the base 14 are both formed of a material having a good thermal conductivity, the heat conduction between the electrostatic chuck 12 and the base 14 is good. Done. Therefore, the electrostatic chuck 12 and the base 14 are thermally directly connected by the convex portion 16. The bonding force between the electrostatic chuck 12 and the base 14 is held by the adhesive 18 disposed between the convex portions 16 being bonded to the bonding surface 12 a of the electrostatic chuck 12.

Therefore, the electrostatic adsorption device 1 having the above structure
By using 0, even if the wafer 22 is heated during discharge in the RIE device 20 shown in FIG. 3, the heat of the wafer 22 is transferred from the electrostatic chuck 12 to the base 1 by the convex portion 16.
Since the heat is efficiently transferred to the wafer 4, the wafer 22 is prevented from being abnormally heated, and the thermal deformation of the wafer 22 can be reliably prevented, and the etching process with high accuracy can be performed.

In the above-described first embodiment, the electrostatic chuck 12 is formed by forming the convex portion 16 on the substrate 14.
Although the base 14 and the base 14 are thermally connected directly to each other, the same effect can be obtained by forming the concave portion in the substrate 14. In this case, the adhesive 18
Is provided to bond the electrostatic chuck 12 and the base 14 to each other, and by forming a concave portion, the convex portion formed on the substrate 14 is relatively joined to the electrostatic chuck 12, and thus the electrostatic chuck 12 is formed. And the base 14 are thermally directly connected.

FIGS. 4 and 5 show an electrostatic attraction device 40 which is a second embodiment of the present invention.

In the electrostatic chucking device 40 shown in the figure, a large number of concave portions 4 serving as thermal connection portions are formed on the joint surface 42a of the electrostatic chuck 42.
6 is formed. This recess 4
6 is formed at the same time when the insulating member 43 forming the electrostatic chuck 42 is formed. Hereinafter, a method of forming the recess 46 will be described.

The insulating member 43 is made of ceramics. Specifically, the insulating member 43 is formed by forming a green sheet in a dough state into a predetermined shape and then firing the green sheet. The recess 46 is formed by screen-printing a ceramic paste on the green sheet before firing.

The number of the recesses 46 provided is, for example, about 1000 when the electrostatic chucking device 40 is configured to chuck the φ22 inch wafer 22. This is 1 cm ²
About 5 pieces are arranged per one. As described above, the number of the recesses 46 that can be provided is larger than that of the protrusions 16 described in the first embodiment. The forming accuracy of the recesses 46 is higher when the recesses 46 are formed by screen printing as compared with machining. It depends. It should be noted that, for convenience of illustration, the drawing shows the recess 46 larger than the actual size.

The shape of each recess 46 is, for example, a cylindrical groove having a height (that is, a cutting depth) of about 0.3 mm and a diameter of about 1 mm. Screen printing is a widely used method in ceramic forming technology, and thus the recess 46
Can be easily formed. The formation of the concave portion 46 is not limited to the method of forming by the screen printing, and may be formed mechanically.

The green sheet having the recess 46 formed therein is put into a firing furnace and fired for a predetermined time, whereby the insulating member 43 having the recess 46 is formed. In this green sheet state, the positive electrode 24
The electrode plate serving as the negative electrode 26 is embedded at a predetermined position in the green sheet, whereby the electrodes 24 and 26 are arranged in the insulating member 43.

In order to bond the electrostatic chuck 42 having the above-mentioned structure to the base 44, first, the adhesive 48 is applied in the recess 46 formed in the insulating member 43 which constitutes the electrostatic chuck 42, and subsequently, The electrostatic chuck 42 coated with the adhesive 48 is placed on top of the base 44. As the adhesive 48 used at this time, for example, a thermosetting adhesive is selected. In addition, a bonding surface 44 of the base 44 with the electrostatic chuck 42
a is a smooth surface as in the conventional case.

Next, the electrostatic chuck 4 thus superposed
A jig is attached so as to sandwich 2 and the base 44, and then heat treatment is performed. The jig and heating conditions are the same as those described in the first embodiment. Specifically, the force for sandwiching the electrostatic chuck 42 and the base 44 by the jig is about 40 to 50 kg, and the heating condition is 120 ° C. It is set to about 1 hour and 30 minutes. By this heat treatment, the adhesive 48 applied in each recess 46 of the insulating member 43 is thermoset, whereby the electrostatic chuck 4
2 and the base 44 are joined by an adhesive 48.

FIG. 5 is an enlarged sectional view showing a portion where the electrostatic chuck 42 and the base 44 are joined. As described above, the concave portion 46 is formed in the electrostatic chuck 42. However, since the convex portion 47 that is relatively protruded is formed at the portion other than the formation position of the concave portion 46, the electrostatic chuck 42 is formed on the base 44. In the state where the chuck 42 is bonded, the protrusion 47 formed on the electrostatic chuck 42 is attached to the bonding surface 44 of the base 44 with the adhesive 48.
Direct contact without going through. Therefore, the electrostatic chuck 42 and the base 44 are thermally directly connected by the convex portion 47. Further, the bonding force between the electrostatic chuck 42 and the base 44 is held by the adhesive 48 disposed between the recesses 46 being bonded to the bonding surface 44 a of the base 44.

Therefore, the electrostatic adsorption device 4 having the above structure
By using 0, even if the wafer 22 is heated during discharge in the RIE apparatus 20 shown in FIG. 3, the heat of the wafer 22 is transferred from the electrostatic chuck 42 to the base 4 by the convex portion 47.
Since the heat is efficiently transferred to the wafer 4, the wafer 22 is prevented from being abnormally heated, and the thermal deformation of the wafer 22 can be reliably prevented, and the etching process with high accuracy can be performed.

In the second embodiment described above, the recess 46 is formed in the insulating member 43 so that the electrostatic chuck 42 and the base 44 are directly connected thermally.
The same effect can be obtained by forming a convex portion on the insulating member 43. In this case, an adhesive 48 is provided between each of the formed protrusions, the electrostatic chuck 42 and the base 44 are bonded by the adhesive 48, and the formed protrusion is bonded to the base 44. As a result, the electrostatic chuck 42 and the base 44 are directly connected thermally.

FIGS. 6 and 7 show an electrostatic attraction device 50 which is a third embodiment of the present invention.

The electrostatic adsorption device 50 shown in the figure is characterized in that a thermal connection member 56 is disposed between the electrostatic chuck 52 and the base 54. This thermal connection member 56 is
For example, a wire-shaped member made of a material having a good thermal conductivity such as copper (Cu) wire is formed in a mesh shape, and an adhesive 58 is used between the electrostatic chuck 52 and the base 54. Intervened. The diameter of this copper wire is selected to be about 0.3 mm, for example. Moreover, the mesh of the copper wire formed in the mesh shape is configured to be about 1 mm. It is easy to form the copper wire into a mesh shape under the above conditions. It should be noted that, for convenience of illustration, the cells are drawn in a larger size than the actual size in the drawing.

In order to interpose the thermal connecting member 56 having the above structure between the electrostatic chuck 52 and the base 54, first, the adhesive 58 is applied to the thermal connecting member 56. Most of the applied adhesive 58 is disposed between the copper wires (in the squares) arranged in a mesh shape. As the adhesive 58 used at this time, for example, a thermosetting adhesive is selected.

Subsequently, the electrostatic chuck 52 and the base 54 are sandwiched so as to sandwich the thermal connection member 56 coated with the adhesive 58.
And overlap. At this time, the joint surface 52a of the electrostatic chuck 52 and the joint surface 54a of the base 54 are both smooth surfaces.

Next, the stacked electrostatic chuck 5
A jig is attached so as to sandwich 2 and the base 54, and then heat treatment is performed. The jig and heating conditions are the same as those described in the first embodiment. Specifically, the force for sandwiching the electrostatic chuck 52 and the base 54 by the jig is about 40 to 50 kg, and the heating condition is 120 ° C. It is set to about 1 hour and 30 minutes. By this heat treatment, the adhesive 58 existing in the squares of the thermal connection member 56 is thermoset, whereby the electrostatic chuck 52 and the base 54 are joined by the adhesive 58.

FIG. 7 is an enlarged sectional view showing a portion where the electrostatic chuck 52 and the base 54 are joined. As shown in the figure, in the bonded state, the electrostatic chuck 52 is
The base 54 and the base 54 are joined to each other via a thermal connection member 56. Further, since the thermal connection member 56 is formed of a material having good thermal conductivity such as copper, the electrostatic chuck 52 and the base 54 are thermally connected via the thermal connection member 56. In addition, the bonding force between the electrostatic chuck 52 and the base 54 is
It is held by an adhesive 58 disposed within the cells of the thermal connection member 56. Although the adhesive also adheres to the copper wire when the adhesive 58 is applied to the thermal connection member 56 described above, the thermal connection member 56 is formed between the electrostatic chuck 52 and the base 54 during the heat treatment as described above. Between the thermal connection member 56 and the electrostatic chuck 52, since they are sandwiched by a predetermined force between them.
Between the heat connecting member 56 and the base 54
There is no intervening adhesive between and.

Therefore, the electrostatic adsorption device 5 having the above structure
By using 0, even if the wafer 22 is heated during discharge in the RIE apparatus 20 shown in FIG. 3, the heat of the wafer 22 is efficiently transferred from the electrostatic chuck 52 to the base 54 by the thermal connection member 56. Therefore, the wafer 22 is prevented from being abnormally heated, the thermal deformation of the wafer 22 can be reliably prevented, and highly accurate etching processing can be performed.

In the third embodiment described above, the thermal connection member 56 has a structure in which copper wires are woven in a matrix, but the thermal connection member is not limited to this structure.
For example, a tape-shaped (thin film-shaped) copper plate may be provided with a large number of holes to form a matrix.

On the other hand, in each of the embodiments described above,
Although an example in which a normal thermosetting adhesive that does not consider thermal conductivity is used as the adhesive 18, 48, 58 to be used is shown, the adhesive 18, 48, 58 having good thermal conductivity is used. As a result, electrostatic chucks 12, 42, 5
It is possible to improve the heat transfer characteristics between the base 2 and the bases 14, 44, 54. As a means for improving the thermal conductivity of this adhesive, for example, in the thermosetting adhesive paste used in each of the examples, metal particles (φ0.01 having a good thermal conductivity (for example, copper)) are used. It is conceivable to have a composition that mixes up to about 0.1 mm).

Further, in the above-mentioned embodiment, the example in which the electrostatic attraction devices 10, 40 and 50 are applied to the RIE device 20 is shown. In the case of this RIE apparatus 20, since the wafer 22 which is the member to be attracted is heated, by using the electrostatic attraction apparatus 10, 40, 50 according to the present invention, the thermal deformation of the wafer 22 as described above is prevented. Occurrence can be prevented. However, when the electrostatic adsorption device 10, 40, 50 according to the present invention is used in a processing device configured to heat the wafer 22 to be a member to be adsorbed, for example, a CVD device, the mounting portion is Heat applied to the bases 14, 44, 54 by a heater or the like causes the electrostatic chucks 12, 42, 52
The heat is efficiently transferred to the electrostatic chucks 12, 4
2, 52 are evenly heated. Therefore, the wafer 22 can be heated uniformly, so that the processing on the wafer 22 is stable and can be performed with high accuracy.

[0061]

As described above, the present invention has the following effects.

By configuring the electrostatic chucking device according to the present invention as set forth in claims 1 to 3, the electrostatic chuck portion and the mounting portion are thermally directly connected by the thermal connection portion, and therefore the electrostatic chuck is attached. The heat transfer efficiency between the portion and the mounting portion can be improved.

Further, by configuring the electrostatic chucking device according to the invention of the above-mentioned claim 4, the electrostatic chuck portion and the mounting portion are thermally connected by the thermal connection member arranged between them. Therefore, the heat transfer efficiency between the electrostatic chuck portion and the mounting portion can be improved.

Therefore, when it is desired to dissipate the heat applied to the object to be attracted, the heat applied to the object to be attracted is efficiently transferred from the electrostatic chuck portion to the mounting portion, so that the temperature of the object to be attracted is increased. Can be prevented from rising abnormally, and when it is desired to heat the adherend, the heat applied to the mounting part is efficiently transferred to the electrostatic chuck part. Are heated evenly. Therefore, it becomes possible to uniformly heat the adsorbent.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of an electrostatic attraction device that is a first embodiment of the present invention.

FIG. 2 is an enlarged cross-sectional view of a main part of the electrostatic attraction device according to the first embodiment of the present invention.

FIG. 3 is a configuration diagram of a main part when the electrostatic adsorption device according to the first embodiment of the present invention is arranged in a reactive ion etching device.

FIG. 4 is a schematic configuration diagram of an electrostatic attraction device that is a second embodiment of the present invention.

FIG. 5 is an enlarged cross-sectional view of a main part of an electrostatic attraction device according to a second embodiment of the present invention.

FIG. 6 is a schematic configuration diagram of an electrostatic attraction device that is a third embodiment of the present invention.

FIG. 7 is an enlarged cross-sectional view of a main part of an electrostatic attraction device according to a third embodiment of the present invention.

FIG. 8 is a schematic configuration diagram showing an example of a conventional electrostatic attraction device.

[Explanation of symbols]

 10, 40, 50 Electrostatic attracting device 12, 42, 52 Electrostatic chuck 13, 43 Insulating member 14, 44, 54 Base 16, 47 Convex part 18, 48, 58 Adhesive 20 RIE device 21 Chamber 22 Wafer 24 Positive Electrode 26 Negative electrode 28, 30 DC high voltage source 32 High frequency generator 46 Recess

Claims (4)

[Claims] 1. A structure for adsorbing an object to be adsorbed (22) by utilizing electrostatic force, wherein an electrode portion (24, 26) for generating the electrostatic force and the electrode portion (24, 26) are arranged. An electrostatic chuck portion (12, 42, 52) composed of an insulating member (13, 43) provided, and the electrostatic chuck portion (12, 42, 52).
42) in which the electrostatic chucking device comprises a mounting part (14, 44) for mounting the electrostatic chucking part (14, 44), at least the electrostatic chucking part (12, 42) or the mounting part (14, 44). (12,4
An electrostatic adsorption device, characterized in that 2) and the mounting portion (14, 44) are in direct contact with each other to form a thermal connection portion (16, 47) for thermal connection. 2. The thermal connection portion is provided by forming a concave portion (46) or a convex portion (16) on at least the electrostatic chuck portion (12, 42) or the mounting portion (14, 44). The electrostatic attraction device according to claim 1. 3. An electrostatic attraction is used to attract the attracted body (22), and the electrode portions (24, 26) for generating the electrostatic force and the electrode portions (24, 26) are arranged. An electrostatic chuck portion (52) composed of an insulating member provided,
In an electrostatic adsorption device including a mounting portion (54) for mounting the electrostatic chuck portion (52), thermal conductivity is provided between the electrostatic chuck portion (52) and the mounting portion (54). The heat connecting member (56) having a structure in which a good material of
The electrostatic chucking device is characterized by thermally connecting the electrostatic chuck part (52) and the mounting part (54). 4. The electrostatic chuck portion (12, 42, 52)
The electrostatic attraction device according to claim 1 or 3, wherein an adhesive having good thermal conductivity is provided between the mounting portion (14, 44, 54) and the mounting portion (14, 44, 54).