JP2015106667A - Substrate placement device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate support device which improves the uniformity of temperature distribution on a substrate.SOLUTION: A substrate placement device 10 includes: a base substance 11 having a placement surface 11a on which a substrate A is placed; a pedestal base 12 which is fixed to the base substance 11 and has higher heat transfer rate than the base substance 11, the pedestal base 12 in which a groove 16 is formed; and a cooling pipe 17 disposed in the groove 16, the cooling pipe 17 to which a cooling medium is supplied. A thermal buffer layer 18 having a heat transfer rate lower than the pedestal base 12 is provided between the groove 16 and the cooling pipe 17.

Description

  The present invention relates to a substrate mounting apparatus, and more particularly to a substrate mounting apparatus that is used in a semiconductor manufacturing apparatus or the like and includes a base on which a substrate such as a silicon wafer is mounted.

  In a semiconductor manufacturing process, a substrate such as a silicon wafer is supported on a mounting surface of a base of a substrate mounting device, and plasma processing such as etching or CVD is performed.

  In plasma processing, temperature management is important, and it is necessary to heat the substrate to a predetermined temperature. Therefore, a resistance heating element is embedded in the base that supports the substrate, and a voltage is applied to the resistance heating element to generate heat, thereby heating the substrate through the base.

  During plasma processing, the temperature of the substrate rises due to heat input from the plasma. However, the plasma treatment needs to be performed at a predetermined temperature. Therefore, there is a case where a groove is provided in a base (also called a cooling jacket, a base plate, etc.) to which the base is fixed, and a part of heat input by the plasma is removed by flowing a cooling medium through the groove (for example, patents). Reference 1).

JP 2000-299288 A

  However, since the pedestal is made of a metal having a high thermal conductivity such as aluminum, the substrate is relatively greatly removed along the groove path, and the in-plane temperature distribution of the substrate may become uneven. Furthermore, in recent years, the pedestal has been required to be thin, and the in-plane temperature distribution of the substrate has become increasingly uneven. If the temperature distribution is not uniform, the substrate may be deformed such as cracking and swell.

  If a gas is supplied between the substrate and the substrate, the uneven temperature distribution is alleviated, but it may not be sufficiently relaxed. In the first place, when the substrate is not an electrostatic chuck, such a measure cannot be adopted.

  An object of this invention is to provide the board | substrate mounting apparatus which can aim at the improvement of the uniform temperature distribution of a board | substrate.

  A first substrate mounting apparatus of the present invention includes a base having a mounting surface for mounting a substrate, a base fixed to the base, a groove formed therein, and a heat transfer coefficient higher than that of the base; And a cooling pipe disposed in the groove and supplied with a cooling medium.

  According to the first substrate mounting apparatus of the present invention, a groove is formed in the pedestal, and the substrate is cooled by supplying the cooling medium to the cooling pipe disposed in the groove. Therefore, the cooling medium removes heat from the substrate in the order of the cooling pipe, the space between the cooling pipe and the groove, the base, and the base.

  Therefore, compared with the conventional case where the cooling medium is supplied to the groove formed in the pedestal as described in Patent Document 1, heat removal from the pedestal by the cooling medium is alleviated. For this reason, it is possible to alleviate the heat extraction from the substrate along the path of the groove, and it is possible to improve the uniform temperature distribution of the substrate. Thereby, the temperature gradient in the surface of a board | substrate becomes small, and a possibility that deformation | transformation, such as a crack and a wave | undulation, will arise in a board | substrate is reduced.

  If the heat transfer coefficient of the entire pedestal is lowered, the temperature distribution of the substrate can be made uniform, but the cooling rate of the substrate becomes slow. For this reason, plasma processing is started, and it takes a long time to cool the substrate whose temperature has risen due to heat input from the plasma to a predetermined temperature.

  On the other hand, in the first substrate mounting device of the present invention, the heat transfer rate of the pedestal is higher than that of the base, so that the substrate cooling rate is fast. Therefore, it is possible to shorten the time taken to cool the substrate whose temperature has increased to a predetermined temperature.

  The 1st board | substrate mounting apparatus of this invention WHEREIN: It is preferable to provide the thermal buffer layer whose heat transfer coefficient is lower than the said base between the said groove | channel and the said cooling pipe.

  In this case, since heat transfer from the cooling pipe to the pedestal can be controlled by the thermal buffer layer, local cooling by the cooling medium is further eased even if the cooling pipe is made of a material having high heat conduction. It becomes possible. Therefore, it is possible to further improve the uniformity of the temperature distribution of the substrate.

  In the first substrate mounting apparatus of the present invention, it is preferable that the base and the pedestal are fixed via a bonding layer formed by solidifying an adhesive.

  In this case, it becomes easy to avoid a gap between the base and the pedestal. Therefore, the presence of the gap hinders local or partial heat transfer between the base and the pedestal, and it is possible to further improve the uniform temperature distribution of the substrate.

  In the first substrate mounting device of the present invention, it is preferable that a heat insulating plate having a heat transfer coefficient lower than that of the base is provided between the base and the pedestal.

  In this case, the heat transfer from the pedestal to the base body can be controlled by the heat insulating plate, so that local cooling by the cooling medium can be further relaxed. Therefore, it is possible to further improve the uniformity of the temperature distribution of the substrate.

  The second substrate mounting apparatus according to the present invention has a substrate surface on which a substrate is mounted coated with a thermal spray layer, and a substrate having a groove formed therein, and is disposed in the groove, and a cooling medium is supplied to the inside. The cooling pipe is provided.

  According to the second substrate mounting device of the present invention, the substrate is cooled by forming the groove in the base and supplying the cooling medium to the cooling pipe disposed in the groove. Therefore, the cooling medium removes heat from the substrate in the order of the cooling pipe, the space between the cooling pipe and the groove, the base body, and the sprayed layer.

  Therefore, compared with the case where the cooling medium is supplied to the groove formed in the substrate, the heat removal of the substrate by the cooling medium is alleviated. For this reason, it is possible to alleviate the heat extraction from the substrate along the path of the groove, and it is possible to improve the uniform temperature distribution of the substrate. Thereby, the temperature gradient in the surface of a board | substrate becomes small, and a possibility that deformation | transformation, such as a crack and a wave | undulation, will arise in a board | substrate is reduced.

  In the second substrate mounting apparatus of the present invention, it is preferable that a thermal buffer layer having a lower heat transfer coefficient than the base is provided between the groove and the cooling pipe.

  In this case, since heat transfer from the cooling pipe to the substrate can be controlled by the thermal buffer layer, local cooling by the cooling medium is further eased even if the cooling pipe is made of a material having high heat conduction. It becomes possible. Therefore, it is possible to further improve the uniformity of the temperature distribution of the substrate.

  In the first or second substrate mounting apparatus of the present invention, the thermal buffer layer is preferably filled with metal powder or ceramic powder.

  In this case, since the number of contact points of the metal powder and ceramic powder can be adjusted by controlling the particle diameter, the heat transfer can be easily controlled.

1 is a schematic cross-sectional view of a substrate mounting apparatus according to a first embodiment of the present invention. The schematic cross section of the board | substrate mounting apparatus which concerns on the deformation | transformation of the 1st Embodiment of this invention. The schematic cross section of the substrate mounting apparatus which concerns on the 2nd Embodiment of this invention. The schematic diagram of the board | substrate mounting apparatus which concerns on Examples 1-5 of this invention is shown, (a) is sectional drawing, (b) is a top view. The schematic diagram of the board | substrate mounting apparatus which concerns on the comparative example 1 of this invention is shown, (a) is sectional drawing, (b) is a top view.

  Hereinafter, the substrate mounting apparatus 10 according to the first embodiment of the present invention will be described.

  As shown in FIG. 1, the substrate mounting apparatus 10 includes a base body 11 having a mounting surface 11 a on which the substrate A is mounted, a base 12 fixed to the base body 11, and a cooling mechanism 13 built in the base 12. I have. The substrate A is, for example, a semiconductor substrate such as a silicon wafer or a glass substrate.

The substrate 11 is preferably made of a ceramic sintered body such as alumina (Al ₂ O ₃ ), aluminum nitride (AlN), or yttria (Y ₂ O ₃ ). However, the base | substrate 11 should just consist of a raw material used as a base material of an electrostatic chuck or a heater.

  The base 11 may be a heater in which a resistance heating element is embedded. The base 11 may be an electrostatic chuck in which an electrode for sucking the substrate toward the mounting surface by Coulomb force is embedded. Further, the substrate 11 may be an electrostatic chuck with a heater function in which a resistance heating element and an electrode are embedded.

  The pedestal 12 is preferably made of a material having a high thermal conductivity, and is made of a material having a thermal conductivity higher than that of the base 11 at least. Examples of such a material include metals such as aluminum, copper, tungsten, and molybdenum, composite materials of ceramics and aluminum, composite materials of ceramics and silicon, and the like. When the base 12 is made of metal, it may be a high-purity metal made of a substantially single material or an alloy. For example, an alloy to which an appropriate element is added in order to improve mechanical characteristics may be used.

  The material of the base 11 and the pedestal 12 may be determined according to the usage environment such as the corrosion resistance against the gas used during the plasma processing, in addition to the thermal conductivity.

  In the present embodiment, the base body 11 and the pedestal 12 are fixed via the bonding layer 14. The bonding layer 14 is formed by solidifying an adhesive such as an organic adhesive or an inorganic adhesive. The thermal conductivity of the bonding layer 14 is preferably lower than that of the substrate 11.

  The type or the like of the adhesive may be selected according to the required performance such as the operating temperature of the substrate A, the corrosion resistance against the gas used during the plasma processing, and the airtightness between the base 11 and the base 12. For example, an epoxy adhesive, an acrylic adhesive, a silicone adhesive, or a polyimide adhesive can be used for an organic adhesive. In the case of an inorganic adhesive, an adhesive containing at least one of silica, alumina, zirconia, calcia, and aluminum nitride can be used.

  Since the adhesive constituting the bonding layer 14 enters the irregularities at the interface between the base 11 and the pedestal 12, there is no gap between the base 11 and the pedestal 12. Therefore, local or partial heat transfer between the base 11 and the pedestal 12 is not hindered by the presence of the gap.

  In addition, fixation with the base | substrate 11 and the base 12 is not limited to the method of using an adhesive agent, You may carry out by a known method. For example, the base 11 and the base 12 can be fixed by a mechanical method using a bolt, a clamp ring, or the like.

  However, it is difficult to avoid a gap at the interface between the base body 11 and the pedestal 12 by a mechanical fixing method. Therefore, it is desirable to interpose a sheet having a certain degree of deformability between the base 11 and the base 12. As such a sheet, for example, a sheet made of a resin such as polyimide, polyethylene, epoxy, acrylic, or silicone. A sheet made of carbon may be used. Moreover, you may fix combining an adhesive agent and the mechanical fixing method.

  As shown in FIG. 2, a heat insulating plate 15 may be interposed between the base 11 and the pedestal 12. In this case, for example, the bonding layer 14 formed by solidifying the adhesive may be provided between the base 11 and the heat insulating plate 15 and between the base 12 and the heat insulating plate 15.

  As the heat insulating plate 15, in addition to the above-mentioned sheet, a flat plate made of glass such as quartz glass, zirconia, or alumina, or ceramics can be used. The thermal conductivity of the heat insulating plate 15 is preferably lower than the thermal conductivity of the base body 11, similarly to the bonding layer 14.

  As shown in FIG. 1, the cooling mechanism 13 includes a groove 16 formed in the pedestal 12 and a cooling pipe 17 disposed in the groove 16. The cooling pipe 17 is supplied with a cooling medium such as water or a fluorine-based cooling refrigerant from a cooling medium supply means (not shown), and the cooling medium flows through the cooling pipe 17.

  The cross-sectional shape of the groove 16 is not particularly limited, and is, for example, a square, a rectangle, a circle, or an ellipse. The path of the groove 16 is not particularly limited, but may be the same path as a conventional groove to which a cooling medium is supplied.

  The material of the cooling pipe 17 is not particularly limited. For example, a metal or resin pipe can be used. However, the cooling pipe 17 is preferably made of a material having low thermal conductivity, and for example, a SUS pipe can be suitably used. The cross-sectional shape of the cooling pipe 17 is not particularly limited, and is, for example, a square, a rectangle, a circle, or an ellipse. The cross-sectional area of the cooling pipe 17 may be the same as the cross-sectional area of a groove to which a conventional cooling medium is supplied.

  In the present embodiment, a thermal buffer layer 18 is provided between the groove 16 and the cooling pipe 17. Since heat transfer from the cooling pipe 17 to the pedestal 12 can be controlled by the thermal buffer layer 18, even if the cooling pipe 17 is made of a material having high thermal conductivity, local cooling by the cooling medium is alleviated. can do. However, a space may be provided without providing the heat buffer layer 18 between the groove 16 and the cooling pipe 17.

  The thermal buffer layer 18 is made of a material having a lower thermal conductivity than the pedestal 12. The material of the heat buffer layer 18 may be liquid or solid. For example, the liquid may be water, alcohol or oil. Examples of the solid include resin-based adhesives, glass-based adhesives, ceramics, glass, carbon, and metal powders. The thermal buffer layer 18 is preferably filled with these materials between the inner wall surface of the groove 16 and the outer wall surface of the cooling pipe 17, but may be filled only partially.

  The thermal buffer layer 18 is preferably filled with powder from the viewpoint of easy adjustment to a low thermal conductivity. Metals and ceramics differ greatly in thermal conductivity depending on the material, and in the case of a bulk body, the thermal conductivity is several W / m · K to several hundred W / m · K.

  If the metal and ceramics are powders, their thermal conductivities are greatly reduced compared to bulk bodies. By controlling the particle diameter of the powder, the number of contact points of the particles can be adjusted, and heat transfer can be easily controlled. The same applies to resin powder. However, metal or ceramic powders are preferable to resin powders because they are less likely to be altered by temperature.

  The heat buffer layer 18 may be formed by filling a non-powder resin kneaded with metal powder or ceramic powder between the groove 16 and the cooling pipe 17.

  The method of forming the groove 16 in the pedestal 12, disposing the cooling pipe 17 in the groove 16, and providing the thermal buffer layer 18 between the groove 16 and the cooling pipe 17 can be performed by the following method. However, it is not limited to these.

  As a first method, a split body is prepared in which grooves 16 are formed on the joint surface and the pedestal 12 is split up and down. Then, with the cooling pipe 17 disposed in the groove 16, the divided bodies are joined by diffusion bonding or brazing, and then the thermal buffer layer 18 is provided by filling the gap 16 and the cooling pipe 17 with powder. May be.

  As a second method, a split body is prepared in which the groove 16 is formed on one joint surface and the pedestal 12 is split up and down. Then, the cooling pipe 17 is disposed in the groove 16, and the divided body is joined by diffusion bonding or brazing in a state where the thermal buffer layer 18 is provided by filling the powder between the groove 16 and the cooling pipe 17. May be.

  As a third method, a groove 16 is formed on one joint surface, and a divided body obtained by dividing the pedestal 12 in the vertical direction and a thin plate material that matches the path of the groove 16 are prepared. Then, the cooling pipe 17 is disposed in the groove 16, the plate material is welded in a state where the heat buffer layer 18 is provided, for example, by filling a powder between the groove 16 and the cooling pipe 17, and then the divided body is diffusion bonded. May be joined. Further, the heat buffer layer 18 may be provided after the welding by filling powder between the groove 16 and the cooling pipe 17.

  As a fourth method, in the first to third methods, the divided bodies may be mechanically joined using screws or the like instead of joining by diffusion bonding or brazing.

  In addition, the method of forming the groove | channel 16 in a division body is not limited. For example, the groove 16 may be cut using an end mill, and an insertion hole inserted from the groove bottom to the opposite surface may be cut using a drill or the like.

  As described above, in the substrate mounting apparatus 10 according to the embodiment of the present invention, the groove 16 is formed in the pedestal 12, and the cooling medium is supplied to the cooling pipe 17 disposed in the groove 16. The substrate A is cooled. Therefore, the cooling medium removes heat from the substrate A in the order of the cooling pipe 17, the thermal buffer layer 18, the pedestal 12, and the base body 11.

  Therefore, compared with the conventional case where the cooling medium is supplied to the groove formed in the pedestal as described in Patent Document 1, the heat removal of the pedestal 12 by the cooling medium is alleviated. Therefore, it is possible to relieve the substrate A from being extracted with relatively large heat along the path of the groove 16, and to make the in-plane temperature distribution of the substrate A uniform. As a result, the temperature gradient in the surface of the substrate A is reduced, and the possibility that the substrate A is deformed such as cracking and swell is reduced.

  If the heat transfer coefficient of the entire pedestal 12 is lowered, the temperature distribution of the substrate A can be made uniform, but the cooling rate of the substrate A becomes slow. For this reason, the plasma processing is started, and it takes a long time to cool the substrate A, whose temperature has risen due to heat input from the plasma, to a predetermined temperature.

  On the other hand, in the substrate mounting apparatus 10, since the heat transfer coefficient of the base 12 is higher than that of the base body 11, the cooling rate of the substrate A is fast. Therefore, it is possible to shorten the time required to cool the substrate A whose temperature has increased to a predetermined temperature.

  Even when the substrate mounting apparatus 10 does not include the thermal buffer layer 18 and the space between the groove 16 and the cooling pipe 17 is a space, the in-plane temperature distribution of the substrate A can be made uniform. It becomes.

  Hereinafter, the substrate mounting apparatus 20 according to the second embodiment of the present invention will be described. However, the description of the same points as those of the substrate mounting apparatus 10 described above will be omitted.

  As shown in FIG. 3, the substrate mounting apparatus 20 includes a base body 21 whose outer surface including a mounting surface 21 a on which the substrate A is mounted is coated with a sprayed layer 22, and a cooling mechanism 23 built in the base body 21. ing.

  The base 21 is preferably made of a material having a high thermal conductivity. Examples of such a material include metals such as aluminum, copper, tungsten, and molybdenum, composite materials of ceramics and aluminum, composite materials of ceramics and silicon, and the like.

  The thermal spray layer 22 is formed by thermal spraying ceramics such as alumina and yttria having excellent resistance to plasma.

  An electrode may be present in the sprayed layer 22. Such an electrode is made of metal and may be formed by thermal spraying, plating, or other methods. Further, an undercoat layer may be present between the sprayed layer 22 and the base 21.

  The cooling mechanism 23 includes a groove 26 formed in the base body 21 and a cooling pipe 27 disposed in the groove 26. The cooling pipe 27 is supplied with a cooling medium from a cooling medium supply means (not shown), and the cooling medium flows through the cooling pipe 27.

  In the present embodiment, a thermal buffer layer 28 is provided between the groove 26 and the cooling pipe 27. Since heat transfer from the cooling pipe 27 to the base 21 can be controlled by the thermal buffer layer 28, local cooling by the cooling medium is alleviated even if the cooling pipe 27 is made of a material having high thermal conductivity. can do. However, a space may be provided without providing the heat buffer layer 28 between the groove 26 and the cooling pipe 27.

  The thermal buffer layer 28 is made of a material having a lower thermal conductivity than the base 21. The material of the thermal buffer layer 28 may be liquid or solid. The thermal buffer layer 28 is preferably filled with powder from the viewpoint of easy adjustment to a low thermal conductivity, but is not limited thereto.

  The method of forming the groove 26 in the base 21, disposing the cooling pipe 27 in the groove 26, and providing the thermal buffer layer 28 between the groove 26 and the cooling pipe 27 is the first to fourth methods described above. Although it can be performed, it is not limited to these.

  As described above, in the substrate mounting apparatus 20 according to the second embodiment of the present invention, the groove 26 is formed in the base body 21, and the cooling medium is supplied to the cooling pipe 27 disposed in the groove 26. Thus, the substrate A is cooled. Therefore, the cooling medium removes heat from the substrate A in the order of the cooling pipe 27, the thermal buffer layer 28, the base 21, and the sprayed layer 22.

  Therefore, similarly to the substrate mounting apparatus 10, the substrate mounting apparatus 20 can reduce heat removal from the base 21 by the cooling medium. For this reason, it is possible to relieve the substrate A from relatively large heat extraction along the arrangement shape of the grooves 26, and to make the in-plane temperature distribution of the substrate A uniform.

  In general, when the thermal spray layer 22 is provided, the thickness of the base 21 is reduced. For this reason, in the conventional case, the substrate is relatively largely removed along the groove arrangement shape, and the in-plane temperature distribution of the substrate becomes more uneven. Therefore, the uniformity of the in-plane temperature distribution of the substrate A by the substrate mounting apparatus 20 becomes more effective.

  Hereinafter, the present invention will be described in detail with specific examples and comparative examples of the present invention.

[Example 1]
As shown in FIGS. 4A and 4B, a disk-shaped substrate 11 having a diameter of 200 mm and a thickness of 10 mm was prepared. The substrate 11 is made of aluminum nitride having a thermal conductivity of 90 W / m · K, and a heating resistor is embedded therein, although not shown.

  The substrate 11 was supported on a circumference of 100 mm in diameter at three equally spaced points, and a voltage was applied to the heating resistor to raise the center point P1 on the upper surface of the substrate 11 to 200 ° C. In this state, the temperature at the point P1 was measured with a thermocouple. Moreover, the temperature of the point P2 on the upper surface located on the circumference with a diameter of 160 mm centered on the point P1 was measured with a thermocouple. Then, “temperature at point P2” − “temperature at point P1” was obtained as a temperature difference. The temperature difference was + 1 ° C. Hereinafter, this temperature difference is referred to as “reference temperature difference”.

  Next, a disk-shaped pedestal 12 having an outer diameter of 200 mm and a thickness of 30 mm was prepared. The pedestal 12 was made of an aluminum alloy (A5052) having a thermal conductivity of 140 W / m · K. And the groove | channel 16 of the cross-sectional square of 25 mm in one side was formed in the inside of the base 12 over 345 degree | times along the circumference with a diameter of 160 mm. Insertion holes that pass through the back surface of the pedestal 12 were formed on the bottom surfaces of both ends of the groove 16.

  A cooling pipe 17 made of SUS304 having an outer diameter of 13 mm and a wall thickness of 0.8 mm was installed in the groove 16 and in the insertion hole. A heat buffer layer 18 was formed by filling alumina powder between the groove 16 and the cooling pipe 17. The thermal conductivity of the thermal buffer layer 18 was less than 0.1 W / m · K. The method of forming the groove 16 in the pedestal 12, arranging the cooling pipe 17 in the groove 16, and providing the thermal buffer layer 18 between the groove 16 and the cooling pipe 17 was performed by the third method described above.

  And the base | substrate 11 and the base 12 were joined. A silicone adhesive was used for bonding. The thickness of the bonding layer 14 was set to 0.05 mm. Thereby, the substrate mounting apparatus 10 was completed.

  The base 11 was heated until the central point of the upper surface reached 200 ° C. while water controlled to 20 ° C. was supplied to the cooling pipe 17 at a flow rate of 5 liters / minute. The ambient atmosphere of the substrate mounting apparatus 10 was room temperature and air. In this state, the temperatures at points P1 and P2 were measured in the same manner as the reference temperature. The temperature difference was + 1 ° C., the same as the reference temperature difference.

  Point P <b> 2 is located immediately above the cooling pipe 17 and is a place where the effect of removing heat by the cooling medium flowing through the cooling pipe 17 is greatly received. On the other hand, the point P <b> 1 is located away from the path of the cooling pipe 17, and is a place where there is little effect of removing heat by the cooling medium flowing through the cooling pipe 17. In Example 1, since the temperature difference between these points P1 and P2 was the same as the reference temperature difference, it can be said that the temperature uniformity of the substrate 11 was good.

  Table 1 summarizes the pedestal 12, the thermal buffer layer 18, and the temperature difference.

[Example 2]
Example 2 was the same as Example 1 except that spindle oil was filled and the thermal buffer layer 18 was used as a filler. The thermal conductivity of the thermal buffer layer 18 was 0.2 W / m · K. As the substrate 11, the substrate 11 used in Example 1 was used.

  The temperature difference was 0 ° C., which was almost the same as the reference temperature difference. Therefore, the temperature uniformity of the substrate 11 was good.

Example 3
Example 3 was the same as Example 1 except that water was filled and the thermal buffer layer 18 was used as a filler. The thermal conductivity of the thermal buffer layer 18 was 0.6 W / m · K. As the substrate 11, the substrate 11 used in Example 1 was used.

  The temperature difference was −2 ° C., which was almost the same as the reference temperature difference. Therefore, the temperature uniformity of the substrate 11 was good.

Example 4
Example 4 was the same as Example 1 except that the silicone adhesive was filled and the thermal buffer layer 18 was used as the filler. The thermal conductivity of the thermal buffer layer 18 was 3 W / m · K. As the substrate 11, the substrate 11 used in Example 1 was used.

  The temperature difference was −4 ° C., which was almost the same as the reference temperature difference. Therefore, the temperature uniformity of the substrate 11 was good.

Example 5
Example 5 was the same as Example 1 except that indium was filled and the thermal buffer layer 18 was used as a filler. The thermal conductivity of the thermal buffer layer 18 was 82 W / m · K. As the substrate 11, the substrate 11 used in Example 1 was used.

  The temperature difference was −7 ° C., which was almost the same as the reference temperature difference. Therefore, the temperature uniformity of the substrate 11 was good.

Example 6
Example 6 was the same as Example 5 except that a heat insulating plate 15 (see FIG. 2) was inserted between the base 11 and the base 12. The heat insulating plate 15 was a disc-shaped quartz plate having a diameter of 200 mm and a thickness of 1 mm. For bonding the base 11 and the heat insulating plate 15, and the heat insulating plate 15 and the base 12, a silicone-based adhesive was used as in Examples 1 to 5. The thickness of each bonding layer 14 was 0.05 mm. The heat conductivity of the heat insulating plate 15 was 1 W / m · K.

  The temperature difference is 0 ° C., which is almost the same as the reference temperature difference. Therefore, the temperature uniformity of the substrate 11 is good and improved over Example 5.

[Comparative Example 1]
As shown in FIGS. 5A and 5B, the substrate 11 used in Example 1 was prepared. A disc-shaped pedestal 32 having an outer diameter of 200 mm and a thickness of 30 mm was prepared. The pedestal 32 was made of an aluminum alloy (A5052) having a thermal conductivity of 140 W / m · K, similarly to the pedestal 12 of Example 1. And the groove | channel 36 of the cross-sectional square of 10 mm in one side was formed in the inside of the base 32 over 345 degree | times along the periphery with a diameter of 160 mm. Insertion holes that pass through the back surface of the pedestal 12 were formed on the bottom surfaces of both ends of the groove 16. Here, the cross-sectional area of the groove 36 is substantially the same as the cross-sectional area of the cooling pipe 17 of the first embodiment.

  And the base | substrate 11 and the base 32 were joined similarly to Example 1. FIG. Thereby, the substrate mounting apparatus 30 was completed.

  Then, the base 11 was heated until the central point P1 of the upper surface reached 200 ° C. while water controlled to 20 ° C. was flowed into the groove 36 at a flow rate of 5 liters / minute. The ambient atmosphere of the substrate mounting apparatus 30 was room temperature and air. In this state, the temperatures of the points P1 and P2 were measured in the same manner as the above reference.

  The temperature difference was −21 ° C., and the difference was large compared to the reference temperature difference. Therefore, it can be said that the temperature uniformity of the substrate 11 is not good. Thus, when the temperature difference exceeds 20 ° C., it is generally difficult to make the temperature of the base body 11 uniform even if the arrangement shape of the heating resistors embedded in the base body 11 is changed.

[Comparative Example 2]
As Comparative Example 2, the same procedure as in Example 5 was performed except that the pedestal 12 was made of a titanium alloy (JIS 60 type). The thermal conductivity of the base 12 was 8 W / m · K. As the substrate 11, the substrate 11 used in Example 1 was used.

  The temperature difference was −18 ° C., and the difference was large compared to the reference temperature difference. Therefore, the temperature uniformity of the substrate 11 was not good.

Example 7
With reference to FIG. 3, a disk-shaped base body 21 having an outer diameter of 200 mm and a thickness of 30 mm was prepared. The substrate 21 was made of an aluminum alloy (A5052) having a thermal conductivity of 140 W / m · K. The surface of the substrate 21 was sprayed with alumina, and the surface was processed so that the thickness of the sprayed layer 22 was 200 μm.

  The base body 21 was supported on a circumference having a diameter of 100 mm at three equally spaced points, and a voltage was applied to the heating resistor to raise the center point P1 of the upper surface of the base body 21 to 200 ° C. In this state, the temperature at the point P1 was measured with a thermocouple. Moreover, the temperature of the point P2 on the upper surface located on the circumference with a diameter of 160 mm centered on the point P1 was measured with a thermocouple. Then, “temperature at point P2” − “temperature at point P1” was obtained as a temperature difference. The temperature difference was + 1 ° C. Hereinafter, this temperature difference is referred to as “reference temperature difference”.

  And the groove | channel 26 of the cross-sectional square of 25 mm in one side was formed in the inside of the base | substrate 21 over 345 degree | times along the periphery with a diameter of 160 mm. Insertion holes that pass through the back surface of the base 21 were formed on the bottom surfaces of both ends of the groove 26.

  A cooling pipe 27 made of SUS304 having an outer diameter of 13 mm and a wall thickness of 0.8 mm was installed in the groove 26 and in the insertion hole. Alumina powder was filled between the groove 26 and the cooling pipe 27 to form a thermal buffer layer 28. The thermal conductivity of the thermal buffer layer 28 was less than 0.1 W / m · K. The method of forming the groove 26 in the substrate 21, disposing the cooling pipe 27 in the groove 26, and providing the thermal buffer layer 28 between the groove 26 and the cooling pipe 27 was performed by the third method described above. Thereby, the substrate mounting apparatus 20 was completed.

  Then, the base 11 was heated until the central point of the upper surface reached 200 ° C. while flowing water controlled to 80 ° C. through the cooling pipe 27 at a flow rate of 5 liters / minute. The ambient atmosphere of the substrate mounting apparatus 20 was room temperature and air. In this state, the temperatures at points P1 and P2 were measured in the same manner as the reference temperature. The temperature difference was + 3 ° C., which was almost the same as the standard temperature difference.

  Point P <b> 2 is located immediately above the cooling pipe 27 and is a place where the effect of removing heat by the cooling medium flowing through the cooling pipe 27 is greatly received. On the other hand, the point P1 is located away from the path of the cooling pipe 27 and is a place where there is little effect of being removed by the cooling medium flowing through the cooling pipe 27. In Example 7, since the temperature difference between these points P1 and P2 was the same as the reference temperature difference, it can be said that the temperature uniformity of the substrate 21 was good.

  The substrate 21, the thermal buffer layer 28 and the temperature difference are summarized in Table 2.

[Comparative Example 3]
A disk-shaped substrate having an outer diameter of 200 mm and a thickness of 30 mm was prepared. This base was made of an aluminum alloy (A5052) having a thermal conductivity of 140 W / m · K, like the base 21 of Example 7. Then, alumina spraying was performed on the surface of the substrate, and the surface was processed so that the thickness of the sprayed layer became 200 μm.

  The substrate was supported on a circumference of 100 mm in diameter at three equally spaced points, and a voltage was applied to the heating resistor to raise the center point P1 on the upper surface of the substrate to 200 ° C. In this state, the temperature at the point P1 was measured with a thermocouple. Moreover, the temperature of the point P2 on the upper surface located on the circumference with a diameter of 160 mm centered on the point P1 was measured with a thermocouple. Then, “temperature at point P2” − “temperature at point P1” was obtained as a temperature difference. The temperature difference was + 1 ° C. Hereinafter, this temperature difference is referred to as “reference temperature difference”.

  Then, similarly to the groove 36 shown in FIGS. 5A and 5B, a groove having a square section of 10 mm on one side is formed in the inside of the base body over 345 degrees along a circumference having a diameter of 160 mm. . Insertion holes for insertion into the back surface of the substrate were formed on the bottom surfaces of both ends of the groove. Here, the sectional area of the groove is substantially the same as the sectional area of the cooling pipe 27 of the seventh embodiment. Thereby, the substrate mounting apparatus was completed.

  Then, the base was heated until the central point P1 on the upper surface reached 200 ° C. while water controlled to 80 ° C. was flowed into the groove at a flow rate of 5 liters / minute. The ambient atmosphere of the substrate mounting apparatus was room temperature and air. In this state, the temperatures of the points P1 and P2 were measured in the same manner as the above reference.

  The temperature difference was + 32 ° C., and the difference was large compared to the reference temperature difference. Therefore, the temperature uniformity of the substrate was not good.

  DESCRIPTION OF SYMBOLS 10,20 ... Board | substrate mounting apparatus, 11, 21 ... Base | substrate, 11a, 21a ... Mounting surface, 12 ... Base, 13, 23 ... Cooling mechanism, 14 ... Joining layer, 15 ... Heat insulation board, 16, 26 ... Groove, 17, 27 ... Cooling tube, 18, 28 ... Thermal buffer layer, 22 ... Thermal spray layer, A ... Substrate.

Claims (7)

A substrate having a mounting surface on which the substrate is mounted;
A pedestal fixed to the base, having a groove formed therein, and having a higher heat transfer coefficient than the base;
A substrate mounting apparatus comprising: a cooling pipe disposed in the groove and supplied with a cooling medium therein.   The substrate mounting apparatus according to claim 1, further comprising a thermal buffer layer having a heat transfer coefficient lower than that of the pedestal between the groove and the cooling pipe.   The substrate mounting apparatus according to claim 1, wherein the base and the pedestal are fixed via a bonding layer formed by solidifying an adhesive.   4. The substrate mounting apparatus according to claim 1, further comprising a heat insulating plate having a heat transfer coefficient lower than that of the base body between the base body and the base. 5. A substrate surface on which a substrate is placed is coated with a thermal spray layer, and a groove is formed inside;
A substrate mounting apparatus comprising: a cooling pipe disposed in the groove and supplied with a cooling medium therein.   The substrate mounting apparatus according to claim 5, further comprising a thermal buffer layer having a lower heat transfer coefficient than the base body between the groove and the cooling pipe.   The substrate mounting apparatus according to claim 2, wherein the thermal buffer layer is filled with metal powder or ceramic powder.