GB922280A - Improvements in or relating to processes and apparatus for the production of ultra-pure semiconductor substances - Google Patents

Improvements in or relating to processes and apparatus for the production of ultra-pure semiconductor substances

Info

Publication number
GB922280A
GB922280A GB37496/60A GB3749660A GB922280A GB 922280 A GB922280 A GB 922280A GB 37496/60 A GB37496/60 A GB 37496/60A GB 3749660 A GB3749660 A GB 3749660A GB 922280 A GB922280 A GB 922280A
Authority
GB
United Kingdom
Prior art keywords
carrier bodies
silicon
temperature
heated
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB37496/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES67478A external-priority patent/DE1134459B/en
Priority claimed from DES65680A external-priority patent/DE1212948B/en
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB922280A publication Critical patent/GB922280A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/02—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using electric fields, e.g. electrolysis
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/14—Single-crystal growth from melt solutions using molten solvents by electrolysis
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1906—Control of temperature characterised by the use of electric means using an analogue comparing device
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/27—Control of temperature characterised by the use of electric means with sensing element responsive to radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Automation & Control Theory (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

<PICT:0922280/III/1> Ultra-pure silicon, or other semiconductor substances are produced by a modification of the process of chemical conversion from the gaseous phase of the parent Specification, wherein the substance is precipitated on to a plurality of carrier bodies connected in series electrically, wherein one of more of the carrier bodies are heated to a temperature at which the voltage across each decreases with an increase in current therethrough, and then one or more further carrier bodies are heated to the temperature at which their conductivity is also increased. The carrier bodies, preferably of silicon or the substance to be precipitated, rest on supports 5, preferably consisting of or at least coated with silicon, silica, or silicon nitride. These are connected to a voltage supply 8 through electrodes 3 and 4 which protrude through the walls of reaction chamber 1, which may be of quarts. One or more of switches 11 are opened and those carrier bodies related therewith are heated until the voltage across each decreases with an increase in current therethrough. The passage of current is controlled by a variable resistor 9. Then one or more further switches are opened and the one or more further carrier bodies heated as before. The temperature of the carrier bodies may be kept constant at a point where the current voltage characteristic of the resistor 9 is at a tangent to that of the plurality of carrier bodies. When all the carriers have attained this temperature, the reaction gas, e.g. silicochloro, form, either alone or mixed with hydrogenenters inlets 6 and is decomposed to precipitate silicon on the carriers. Specification 889,192 also is referred to.
GB37496/60A 1954-05-18 1960-11-01 Improvements in or relating to processes and apparatus for the production of ultra-pure semiconductor substances Expired GB922280A (en)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
DES67478A DE1134459B (en) 1954-05-18 1954-05-18 Semiconductor component with a semiconductor body made of silicon
DES39209A DE1102117B (en) 1954-05-18 1954-05-18 Process for the production of the purest silicon
DES42803A DE1223815B (en) 1954-05-18 1955-02-24 Process for the production of the purest silicon
DES0042824 1955-02-25
DES49371A DE1193022B (en) 1954-05-18 1956-07-06 Process for the production of the purest silicon
DES50407A DE1185449B (en) 1954-05-18 1956-09-18 Device for the production of the purest semiconductor materials
DES55831A DE1211610B (en) 1954-05-18 1957-11-11 Process for the production of the purest silicon
DES56317A DE1208298B (en) 1954-05-18 1957-12-19 Process for producing silicon for semiconductor devices
DE1958S0058219 DE1217348C2 (en) 1954-05-18 1958-05-14 Process for the production of the purest silicon
DES61117A DE1209113B (en) 1954-05-18 1958-12-23 Process for producing high purity silicon
DES65680A DE1212948B (en) 1959-11-02 1959-11-02 Process for the production of pure silicon rods
DES66308A DE1212949B (en) 1954-05-18 1959-12-17 Process for producing high purity silicon
DES69895A DE1235266B (en) 1954-05-18 1961-05-18 Process for the production of the purest crystalline substances, especially for semiconductor purposes

Publications (1)

Publication Number Publication Date
GB922280A true GB922280A (en) 1963-03-27

Family

ID=27583977

Family Applications (1)

Application Number Title Priority Date Filing Date
GB37496/60A Expired GB922280A (en) 1954-05-18 1960-11-01 Improvements in or relating to processes and apparatus for the production of ultra-pure semiconductor substances

Country Status (1)

Country Link
GB (1) GB922280A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2423352A1 (en) 2010-08-24 2012-02-29 Centesil S.L. Thermal shield for silicon production reactors
US8231724B2 (en) 2007-09-20 2012-07-31 Mitsubishi Materials Corporation Reactor for polycrystalline silicon and polycrystalline silicon production method
EP2595918A1 (en) * 2010-07-23 2013-05-29 Centrotherm Sitec GmbH Method and apparatus for igniting silicon rods outside a cvd-reactor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8231724B2 (en) 2007-09-20 2012-07-31 Mitsubishi Materials Corporation Reactor for polycrystalline silicon and polycrystalline silicon production method
US8790429B2 (en) 2007-09-20 2014-07-29 Mitsubishi Materials Corporation Reactor for polycrystalline silicon and polycrystalline silicon production method
EP2039653B1 (en) * 2007-09-20 2015-12-23 Mitsubishi Materials Corporation Reactor for polycrystalline silicon and polycrystalline silicon production method
EP2595918A1 (en) * 2010-07-23 2013-05-29 Centrotherm Sitec GmbH Method and apparatus for igniting silicon rods outside a cvd-reactor
US9255325B2 (en) 2010-07-23 2016-02-09 Centrotherm Sitec Gmbh Method and apparatus for igniting silicon rods outside a CVD-reactor
EP2423352A1 (en) 2010-08-24 2012-02-29 Centesil S.L. Thermal shield for silicon production reactors
WO2012025513A1 (en) 2010-08-24 2012-03-01 Centesil S.L. Thermal shield for silicon production reactors

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