GB894700A - Improvements in or relating to the production of semi-conductor arrangements - Google Patents

Improvements in or relating to the production of semi-conductor arrangements

Info

Publication number
GB894700A
GB894700A GB506861A GB506861A GB894700A GB 894700 A GB894700 A GB 894700A GB 506861 A GB506861 A GB 506861A GB 506861 A GB506861 A GB 506861A GB 894700 A GB894700 A GB 894700A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
silicon
carrier body
feb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB506861A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB894700A publication Critical patent/GB894700A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Abstract

894,700. Semi-conductor devices. SIEMENS & HALSKE A.G. Feb. 10, 1961 [Feb. 12, 1960], No. 5068/61. Class 37. In the production of a semi-conductor device, a gaseous compound of a semi-conductor is decomposed to deposit a layer of semi-conductor on to a heated semi-conductor body which is placed on a carrier body of semi-conductor material. The arrangement avoids harmful effects which may arise from the use of other material for the carrier body. Fig. 1 shows a silicon carrier body 1 supported between electrodes 8 and 9 in a reaction chamber. Silicon discs 2-7 are placed on the body 1 which is heated to decompose a reaction gas such as silicochloroform with hydrogen and possibly including a gaseous compound of a doping substance, whereby a semi-conductor of different resistivity or conductivity type is deposited on the silicon discs. The electrodes are preferably covered with silicon. Heating is effected by passing current through the carrier body firstly by using a high-voltage source and then a lower voltage as the temperature rises and resistivity falls. In an alternative arrangement heating is effected by use of an induction coil. High and low resistivity layers may be produced and may be used to provide diode rectifiers, solar cells, variable capacitors and transistors. Germanium may be used in place of silicon.
GB506861A 1960-02-12 1961-02-10 Improvements in or relating to the production of semi-conductor arrangements Expired GB894700A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1960S0067068 DE1258519B (en) 1960-02-12 1960-02-12 Process for the production of semiconductor bodies for semiconductor components

Publications (1)

Publication Number Publication Date
GB894700A true GB894700A (en) 1962-04-26

Family

ID=7499277

Family Applications (1)

Application Number Title Priority Date Filing Date
GB506861A Expired GB894700A (en) 1960-02-12 1961-02-10 Improvements in or relating to the production of semi-conductor arrangements

Country Status (4)

Country Link
CH (1) CH399597A (en)
DE (1) DE1258519B (en)
GB (1) GB894700A (en)
NL (1) NL260907A (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (en) * 1951-03-07 1900-01-01
DE896147C (en) * 1951-08-07 1953-11-09 Siemens Ag Process for the production of germanium precipitates from gas or vaporous germanium compounds
DE1057845B (en) * 1954-03-10 1959-05-21 Licentia Gmbh Process for the production of monocrystalline semiconducting compounds
DE1048638B (en) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Process for the production of semiconductor single crystals, in particular silicon, by thermal decomposition or reduction

Also Published As

Publication number Publication date
DE1258519B (en) 1968-01-11
NL260907A (en)
CH399597A (en) 1965-09-30

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