GB887037A - Improvements in or relating to alloying-jigs for the manufacture of semi-conductor devices - Google Patents
Improvements in or relating to alloying-jigs for the manufacture of semi-conductor devicesInfo
- Publication number
- GB887037A GB887037A GB28972/60A GB2897260A GB887037A GB 887037 A GB887037 A GB 887037A GB 28972/60 A GB28972/60 A GB 28972/60A GB 2897260 A GB2897260 A GB 2897260A GB 887037 A GB887037 A GB 887037A
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacture
- hydrogen
- jigs
- alloying
- relating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract 4
- 239000001257 hydrogen Substances 0.000 abstract 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 2
- 239000001273 butane Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract 2
- 239000011733 molybdenum Substances 0.000 abstract 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 abstract 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 abstract 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000005049 silicon tetrachloride Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
An alloy for use in the manufacture of semiconductor devices (see Group XXXVI) consists of 95% by weight indium and 5% gallium. An apertured molybdenum plate for use as a jig in such manufacture is coated by first heating at 1000 DEG C. for 10 minutes in a flowing mixture of 10 volumes hydrogen and 1 volume hydrogen saturated with silicon tetrachloride vapour. After a further 5 minute treatment at 1000 DEG C. in a mixture of 10 volumes hydrogen and 1 volume butane the plate is heated to 1250-1300 DEG C. in hydrogen for 10 minutes to react the deposited carbon and silicon with the molybdenum. In an otherwise identical method the treatment in butane is omitted.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL242671 | 1959-08-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB887037A true GB887037A (en) | 1962-01-10 |
Family
ID=19751890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB28972/60A Expired GB887037A (en) | 1959-08-25 | 1960-08-22 | Improvements in or relating to alloying-jigs for the manufacture of semi-conductor devices |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3080841A (en) |
| CH (1) | CH399596A (en) |
| DE (1) | DE1114940B (en) |
| GB (1) | GB887037A (en) |
| NL (2) | NL126558C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4587928A (en) * | 1975-12-24 | 1986-05-13 | Tokyo Shibaura Electric Co., Ltd. | Apparatus for producing a semiconductor device |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1051451A (en) * | 1963-02-08 | |||
| DE1282794C2 (en) * | 1965-04-01 | 1975-10-09 | Siemens AG, 1000 Berlin und 8000 München | METHOD OF MANUFACTURING AN ALLOY MASK FOR THE SIMULTANEOUS MANUFACTURING OF SEVERAL SEMICONDUCTOR ARRANGEMENTS |
| US3571919A (en) * | 1968-09-25 | 1971-03-23 | Texas Instruments Inc | Semiconductor device fabrication |
| US3719981A (en) * | 1971-11-24 | 1973-03-13 | Rca Corp | Method of joining solder balls to solder bumps |
| US3894329A (en) * | 1972-07-28 | 1975-07-15 | Sperry Rand Corp | Method of making high density electronic interconnections in a termination device |
| DE2656019C3 (en) * | 1976-12-10 | 1980-07-17 | Brown, Boveri & Cie Ag, 6800 Mannheim | Device for aligning and soldering pedestals or discs with respect to or on the solderable ohmic contacts) of semiconductor components |
| US6864570B2 (en) * | 1993-12-17 | 2005-03-08 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL104654C (en) * | 1952-12-31 | 1900-01-01 | ||
| US2756483A (en) * | 1953-05-11 | 1956-07-31 | Sylvania Electric Prod | Junction forming crucible |
| US2879188A (en) * | 1956-03-05 | 1959-03-24 | Westinghouse Electric Corp | Processes for making transistors |
| US2879189A (en) * | 1956-11-21 | 1959-03-24 | Shockley William | Method for growing junction semi-conductive devices |
| US2964431A (en) * | 1959-07-28 | 1960-12-13 | Rca Corp | Jig alloying of semiconductor devices |
-
0
- NL NL242671D patent/NL242671A/xx unknown
- NL NL126558D patent/NL126558C/xx active
-
1960
- 1960-07-19 US US43813A patent/US3080841A/en not_active Expired - Lifetime
- 1960-08-22 GB GB28972/60A patent/GB887037A/en not_active Expired
- 1960-08-22 CH CH949060A patent/CH399596A/en unknown
- 1960-08-22 DE DEN18803A patent/DE1114940B/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4587928A (en) * | 1975-12-24 | 1986-05-13 | Tokyo Shibaura Electric Co., Ltd. | Apparatus for producing a semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| NL242671A (en) | |
| NL126558C (en) | |
| CH399596A (en) | 1965-09-30 |
| US3080841A (en) | 1963-03-12 |
| DE1114940B (en) | 1961-10-12 |
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