GB1017119A - Improvements in or relating to the manufacture of semiconductor materials - Google Patents

Improvements in or relating to the manufacture of semiconductor materials

Info

Publication number
GB1017119A
GB1017119A GB1880864A GB1880864A GB1017119A GB 1017119 A GB1017119 A GB 1017119A GB 1880864 A GB1880864 A GB 1880864A GB 1880864 A GB1880864 A GB 1880864A GB 1017119 A GB1017119 A GB 1017119A
Authority
GB
United Kingdom
Prior art keywords
hydride
impurity element
semi
impurity
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1880864A
Inventor
Henley Frank Sterling
John Henry Alexander
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB1880864A priority Critical patent/GB1017119A/en
Priority to DE19651544308 priority patent/DE1544308C3/en
Priority to FR16071A priority patent/FR1432345A/en
Priority to BE663513D priority patent/BE663513A/nl
Priority to NL6505720A priority patent/NL6505720A/xx
Publication of GB1017119A publication Critical patent/GB1017119A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Silicon Compounds (AREA)

Abstract

A semi-conductor material, which includes a significant impurity element or significant impurity elements of opposite conductivity type and which is made by decomposing a gaseous hydride of the semi-conductor element simultaneously with a gaseous hydride of the or one of the impurity element or elements of a decomposition zone, the gaseous hydride of the or each impurity element being generated in situ at or near to the decomposition zone, may be made by epitaxial deposition of the hydrides on to a heated substrate in the decomposition zone. The semi-conductor material and the substrate may be in single crystal form and may be of the same material. The decomposition zone may be bounded by a decomposition chamber, the generation of the or each impurity hydride either occurring at or near to the entrance to the chamber, when the semi-conductor element hydride may be supplied to the chamber separately from the supply of the or each impurity hydride, the latter being carried into the chamber by a stream of hydrogen gas, or occurring within the chamber, when only the semi-conductor element hydride may be supplied to the chamber from an external source. The or each impurity element may be at an elevated temperature. The hydride of the or each impurity element may be generated by a process utilizing electrical power, for example by the reaction between atomic hydrogen and a body comprising the impurity element or a compound thereof, by electrolysis of a fused salt of the impurity element using inert electrodes, or by electrolysis of an electrolyte using electrodes of the impurity element, and the rate of generation of the hydride may be controlled by varying the electrical power to the generation means. The Specification details sources and preparations of the atomic hydrogen. The semi-conductor material may be, for example, silicon or germanium; the impurity element may be, for example, arsenic, antimony or phosphorus, or boron, aluminium or gallium. Fully described and illustrated examples are given of the production of semi-conductor material containing boron and arsenic as impurity elements by deposition of silicon on silicon substrates, the impurity element hydrides being generated near to the entrance to, and within, the decomposition chamber.ALSO:A semi-conductor material which includes a significant impurity element or significant impurity elements of opposite conductivity type is made by decomposing a gaseous hydride of the semi-conductor element simultaneously with a gaseous hydride of the or one of the impurity element or elements at a decomposition zone, the gaseous hydride of the or each impurity element being generated in situ at or near to the decomposition zone. The decomposition zone may be bounded by a decomposition chamber, the generation of the or each impurity hydride either occurring at or near to the entrance to the chamber, when the semi-conductor element hydride may be supplied to the chamber separately from the supply of the or each impurity hydride, the latter being carried into the chamber by a stream of hydrogen gas, or occurring within the chamber, when only the semi-conductor element hydride may be supplied to the chamber from an external source. The or each impurity element may be at an elevated temperature. The hydride of the or each impurity element may be generated by a process utilizing electric power, for example by the reaction between atomic hydrogen and a body comprising the impurity element or a compound thereof, by electrolysis of a fused salt of the impurity element using inert electrodes, or by electrolysis of an electrolyte using electrodes of the impurity element. The atomic hydrogen may be made by subjecting molecular hydrogen to controlled electric sparking, for example between electrodes comprising the impurity element, when the electrodes may include a material compatible with the electrode material for lowering its resistivity, to controlled ultra-violet radiation, to an electric glow discharge, or by passing molecular hydrogen over a heated filament. The source of the atomic hydrogen may be the hydrogen carrier gas or hydrogen produced by the decomposition of the hydride of the semi-conductor element. The rate of generation of the gaseous impurity element hydride may be controlled by varying the electric power to the generation means. The semi-conductor material may be made by epitaxial deposition of the hydrides on to a heated substrate in the decomposition zone. The semi-conductor material and the substrate may be in single crystal form and may be of the same material. The semi-conductor material may be, for example, silicon, the impurity element may be, for example, arsenic, antimony or phosphorus, or boron, aluminium or gallium. Fully described and illustrated examples are given of the production of silicon semi-conductor material containing boron and arsenic as impurity elements, the impurity element hydrides being generated near to the entrance to, and within, the decomposition chamber.
GB1880864A 1953-09-25 1964-05-06 Improvements in or relating to the manufacture of semiconductor materials Expired GB1017119A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB1880864A GB1017119A (en) 1964-05-06 1964-05-06 Improvements in or relating to the manufacture of semiconductor materials
DE19651544308 DE1544308C3 (en) 1964-05-06 1965-05-03 Process for the epitaxial deposition of doped semiconductor layers
FR16071A FR1432345A (en) 1964-05-06 1965-05-06 Improvements in the manufacture of a semiconductor material
BE663513D BE663513A (en) 1953-09-25 1965-05-06
NL6505720A NL6505720A (en) 1964-05-06 1965-05-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1880864A GB1017119A (en) 1964-05-06 1964-05-06 Improvements in or relating to the manufacture of semiconductor materials

Publications (1)

Publication Number Publication Date
GB1017119A true GB1017119A (en) 1966-01-19

Family

ID=10118768

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1880864A Expired GB1017119A (en) 1953-09-25 1964-05-06 Improvements in or relating to the manufacture of semiconductor materials

Country Status (2)

Country Link
GB (1) GB1017119A (en)
NL (1) NL6505720A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2200138A (en) * 1984-07-26 1988-07-27 Japan Res Dev Corp Semiconductor crystal growth apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2200138A (en) * 1984-07-26 1988-07-27 Japan Res Dev Corp Semiconductor crystal growth apparatus
GB2200138B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus

Also Published As

Publication number Publication date
DE1544308B2 (en) 1974-03-14
DE1544308A1 (en) 1970-07-30
NL6505720A (en) 1965-11-08

Similar Documents

Publication Publication Date Title
US3146123A (en) Method for producing pure silicon
US4217374A (en) Amorphous semiconductors equivalent to crystalline semiconductors
Rogers et al. Crystal growth and semiconductivity of palladium oxide
US4213781A (en) Deposition of solid semiconductor compositions and novel semiconductor materials
GB1347368A (en) Manufacture of tubular bodies of semiconductor material
GB1119968A (en) Improvements in or relating to methods producing semiconductor material
US2711379A (en) Method of controlling the concentration of impurities in semi-conducting materials
US1450464A (en) Crystal formation
DE3000802A1 (en) Silicon prodn. by decomposition or redn. of silicon cpd. in plasma - produced in carrier gas stream gives pure silicon at very low cost
US3134695A (en) Apparatus for producing rod-shaped semiconductor bodies
US3220380A (en) Deposition chamber including heater element enveloped by a quartz workholder
GB1017119A (en) Improvements in or relating to the manufacture of semiconductor materials
GB1263580A (en) Improvements in or relating to the production of a tubular body of a semiconductor material
GB1181935A (en) Improvements in or relating to Devices for the Heat-Treatment of Plate-like Semiconductor Bodies
Gokhale et al. Disilanylphosphine and Disilylphosphine
JPS62171993A (en) Production of diamond semiconductor
US4945857A (en) Plasma formation of hydride compounds
GB934673A (en) Improvements in or relating to the production of semi-conductor materials
GB929074A (en) A process for the production of extremely pure semi-conductor material
US3736180A (en) Method of producing solar cells
US2887453A (en) Semi-conductor activated with dissociated ammonia
GB992029A (en) Improvements in or relating to the treatment of semiconductor materials
US3318814A (en) Doped semiconductor process and products produced thereby
GB878764A (en) Improvements in and relating to manufacturing processes
EP0245600B1 (en) Process for the plasma synthesis of hydride compounds and apparatus for carrying out said process